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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Sputtering as a Technique for Applying Tribological Coatings

Friction and wear induced mechanical failures may be controlled to extend the life of tribological components through the interposition of selected solid materials between contacting surfaces. Thin solid films of soft and hard materials are appropriate to lower friction and enhance the wear resistance of precision tribo-elements. Thin film coating technologies that have been developed may be used to interpose thin solid layers between contacting surfaces to reduce friction or to extend wear life. Film deposition technologies developed include chemical vapor deposition (CVD) and physical vapor deposition (PVD). Sputter coating is a PVD process for thin film deposition. It allows close control of coating thickness and composition and is well-suited for the deposition of tribological coatings. In this paper, the utility of magnetron sputtering for the deposition of tribological coatings is examined. Experimental results obtained when coated bodies are tested under a number of tribological operating conditions are presented. It is shown that when film adhesion problems are resolved, sputtering can be an effective means of depositing tribological coatings.

S Ramalingam↗
DOE OSTI2022

Nb₃Sn Coating of a 2.6 GHz SRF Cavity by Sputter Deposition Technique

Nb₃Sn is of interest as a coating for SRF cavities due to its higher transition temperature Tc ~18.3 K and superheating field Hsh ~400 mT, both are twice that of Nb. Nb₃Sn coated cavities can achieve high-quality factors at 4 K and can replace the bulk Nb cavities operated at 2 K. A cylindrical magnetron sputtering system was built, commissioned, and used to deposit Nb₃Sn on the inner surface of a 2.6 GHz single-cell Nb cavity. With two identical cylindrical magnetrons, this system can coat a cavity with high symmetry and uniform thickness. Using Nb-Sn multilayer sequential sputtering followed by annealing at 950°C for 3 hours, polycrystalline Nb₃Sn films were first deposited at the equivalent positions of the cavity’s beam tubes and equator. The film’s composition, crystal structure, and morphology were characterized by energy dispersive spectroscopy, X-ray diffraction, and atomic force microscopy. The Tc of the films was measured by the four-point probe method and was 17.61 to 17.76 K. Based on these studies, ~1.2 micron thick Nb₃Sn was deposited inside a 2.6 GHz Nb cavity. We will discuss first results from samples and cavity coatings, and the status of the coating system.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Effect of substrate tilt on sputter-deposited AuTa films

Gold-tantalum alloy films are of interest for biomedical and magnetically-assisted inertial confinement fusion applications. However, growth mechanisms of such Au-Ta alloy films are not well understood. Here, we systematically study the effect of substrate tilt on properties of films deposited by direct current magnetron sputtering from a AuTa alloy target. Experimental data is correlated with distributions of landing energies and incident angles of sputtered and backscattered species calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Results reveal that the deposition rate and film density monotonically decrease with increasing substrate tilt. Properties are similar for films with a tilt of 40° and below: films are amorphous, with an average compressive stress of 0.5 GPa, a density of 16 g/cm 3 , and electrical resistivity of 200 μΩ cm. The critical substrate tilt angle for the onset of porosity, a transition to a reduced stress state, and an increase in electrical resistivity lies between 40 and 60°. Based on Monte Carlo simulations, these changes in film properties are correlated with an increase in the average impact angle of the ballistic component of atomic flux. Implications of these results to deposition onto non-planar substrates are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ion-beam assisted sputtering of titanium nitride thin films

Abstract Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures $$T_{c}$$ T c as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting $$T_c$$ T c in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting $$T_c$$ T c due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Controlled Growth of Ta Oxide With Reactive Sputtering for Overlap Josephson Junction Application

Josephson junctions $\($JJs$\)$ are indispensable elements for superconducting quantum electronics. There is a growing need to develop processes for high quality JJs. Here we explore the growth of Ta oxide as a dielectric barrier for Metal-Oxide-Metal overlap JJ implementations. We study films of Ta oxides prepared with reactive magnetron sputtering. TaOx is grown on silicon and Ta films with varying RF power and oxygen concentrations. Tuning these parameters allows us to control the rate of deposition as well as composition of polycrystalline Ta oxides needed to meet our dielectric requirements for Josephson Junctions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

High-throughput multimodal exploration of a nanocrystalline Cu-Ag library

Sputter-deposited, nanocrystalline Cu-Ag thin films produced across a broad compositional and deposition-parameter space were evaluated to unravel the process-structure-property relationships important for creating hard, conductive electrical contacts and coatings. Combinatorial deposition involving pulsed direct current magnetron sputtering of elemental targets enabled swift examination of nearly the full range of alloy compositions and a relevant portion of deposition atomistics. Several high-throughput characterization modalities were employed to evaluate the chemistry, structure, and properties of the films. The resultant hardness, modulus, film density, crystal texture, and resistivity were analyzed in terms of key deposition characteristics (incident atom kinetic energy and incidence angle) predicted by binary-collision, kinematic Monte Carlo simulations. The study revealed improved hardness, parabolic resistivity dependence on composition, and compositional and process dependencies of film tarnishing. The results are discussed in the context of variations in microstructure and film density. Transmission electron microscopy and X-ray diffraction demonstrate several forms of compositional variation including solute segregation to grain boundaries as well as periodic, intragranular compositional modulations. Annealing of a Cu-rich alloy film exhibiting grain boundary segregation showed that this as-deposited, compositional variation is not stable above 100 °C. Finally, the Cu-Ag system is shown to have potential for hard, conductive, tarnish-resistant and room temperature-stable nanocrystalline thin films across the composition space.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effects of hydrogen on sputter-deposited boron carbide films

Sputter deposition of B 4 C films requires precise control over the microstructure and the nucleation and growth of nodular defects. Here, we study the properties of B 4 C films deposited with substrate holder temperatures of 250, 450, or 510 °C and different substrate tilt angles by direct-current magnetron sputtering in either pure Ar or a mixture of 4% H 2 in Ar as the working gas. Results show that the addition of H 2 reduces the impedance of the plasma discharge, resulting in larger discharge currents at constant power, which is attributed to a lower ionization potential of H 2 than Ar. More importantly, films deposited with the H 2 containing plasma exhibit lower oxygen impurity incorporation, a lower density of nodular defects, and suppressed columnar microstructure. These results demonstrate the effectiveness of such a plasma doping approach to improve the properties of B 4 C films.

Wong, M. S. [Lawrence Livermore National Laborator↗
DOE OSTI2024

Unconventional spin-orbit torques from sputtered MoTe 2 films

Materials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane fieldlike (FL) torques and out-of-plane dampinglike (DL) torques, which can effectively manipulate and deterministically switch an out-of-plane magnetization without the need for additional external in-plane magnetic fields. Here, we report SOTs generated by magnetron-sputtered 1⁢T' MoTe 2 /Permalloy (Py; Ni 80 ⁢Fe 20 )/MgO heterostructures using both spin-torque ferromagnetic resonance (ST-FMR) and second harmonic Hall measurements. We observed unconventional FL and DL torques in our samples due to spins polarized normal to the interface of MoTe 2 and Py layers, and studied the influence of crystallographic order and MoTe 2 layer thickness on the SOTs. By comparing the Raman spectra of 1⁢T' MoTe 2 samples prepared in different ways, we found a tensile strain in sputtered MoTe 2 films, which might further enhance the generation of unconventional torques by reducing the symmetry of 1⁢T' MoTe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Sputter deposition of Ta 1 W 1 Au 1 Bi 7 films for next generation hohlraums

Hohlraum simulation predicts a higher x-ray drive from Ta 1 W 1 Au 1 Bi 7 compared with our current Au hohlraum. Here, we study the effect of deposition process parameters including deposition rate, working pressure, target-to-substrate distance, substrate bias, and substrate temperature on the microstructure of Ta1W1Au1Bi7 films deposited by direct current magnetron sputtering onto planar substrates. We found that the substrate temperature has a pronounced effect on the film microstructure. This is attributed to the Bi low melting point (271°C) causing its adatom mobility to be strongly dependent on the substrate temperature. Additionally, we observed phase separation for films deposited with a high substrate bias. These results have important implications for the development of a robust Ta 1 W 1 Au 1 Bi 7 hohlraum fabrication process.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO x /n + poly-Si contact in a complete Cz n-Si cell with a back-side Al 2 O 3 /SiN x passivating boron-diffused p + -emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV oc ) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm 2 , an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm 2 to 90 mΩ-cm 2 . After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm 2 from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

14 SOLAR ENERGY↗
DOE OSTI2026

Nb3Sn Superconducting Radiofrequency Cavity Fabricated by Sputter Deposition from a Stoichiometric Target

Nb$_3$Sn is a promising coating material for superconducting radiofrequency cavities in next-generation accelerators due to its higher superconducting transition temperature (~18.3 K) and superheating field (~400 mT), offering the potential to surpass the intrinsic performance limits of bulk niobium. We developed a sputter coating technique employing a stoichiometric target to fabricate Nb$_3$Sn films on the inner surfaces of niobium cavities. A Nb$_3$Sn tube target, prepared by growing a >20 m thick Nb$_3$Sn coating on the surface of a Nb tube via a Sn vapor diffusion process, was used in a DC cylindrical magnetron sputtering system. Approximately 170 nm thick Nb-Sn films were sputter-coated onto flat Nb substrates positioned to replicate the beam tube and equator regions of a 2.6 GHz cavity, followed by annealing at 950 °C for 3 hours to form Nb$_3$Sn. The composition, morphology, and structure of the annealed Nb$_3$Sn films were examined. Then, a ~1.2 m-thick film was sputter-coated onto the interior of a 2.6 GHz Nb cavity following the procedure developed for the flat samples. The cavity was subsequently annealed under the same conditions used for the flat samples. Cryogenic RF testing of the sputter-coated cavity demonstrated a T$_c$ of approximately 17.8 K, consistent with Nb$_3$Sn layer. Subsequently, the cavity underwent a light Sn recoating followed by a vapor diffusion Nb$_3$Sn coating process, achieving a quality factor of approximately 8.5 × 10$^9$ and an accelerating gradient of up to 11.3 MV/m at 4.2 K.

Shakel, Md Sharifuzzaman [Old Dominion U.; Jeffers↗
DOE OSTI2020

All-Sputtered, Superior Power Density Thin-Film Solid Oxide Fuel Cells with a Novel Nanofibrous Ceramic Cathode

Thin film solid oxide fuel cells (TF-SOFCs) are attracting attention due to their ability to operate at comparatively lower temperatures (400–650 °C) that are unattainable for conventional anode-supported SOFCs (650–800 °C). However, limited cathode performance and cell scalability remain persistent issues. Here, we report a new approach of fabricating yttria-stabilized zirconia (YSZ)-based TF-SOFCs via a scalable magnetron sputtering process. Notable is the development and deposition of a porous La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 2.95 (LSCF)-based cathode with a unique fibrous nanostructure. This all-sputtered cell shows an open-circuit voltage of ~1.0 V and peak power densities of ~1.7 and ~2.5 W/cm 2 at 600 and 650 °C, respectively, under hydrogen fuel and air along with showing stable performance in short-term testing. The power densities obtained in this work are the highest among YSZ-based SOFCs at these low temperatures, which demonstrate the feasibility of fabricating exceptionally high-performance TF-SOFC cells with distinctive dense or porous nanostructures for each layer, as desired, by a sputtering process. This work illustrates a new, potentially low-cost, and scalable platform for the fabrication of next-generation TF-SOFCs with excellent power output and stability.

25 ENERGY STORAGE↗
DOE OSTI2025

Pathway to tune sputter coated Nb$_3$Sn with Zr

Superconducting radio frequency (SRF) cavities are essential elements of many modern-day particle accelerators such as, European XFEL (DESY), LCLS II-HE (SLAC) and PIP II (Fermilab). Nb$_3$Sn superconducting material promises significant potential to exceed the performance of conventional niobium based SRF cavities. We aim to advance the ongoing R$&$D efforts to achieve Nb$_3$Sn coated cavities with high material quality. In this work, we have developed to achieve a route for effectively reducing the intrinsic defects in magnetron sputter coated Nb$_3$Sn SRF cavities and eventually improve the overall RF performance. We have observed that Zr is mainly being incorporated as ZrO$_2$ precipitates of average dimensions ranging from 20-100nm. By increasing the concentration of Zr, we have three major effects in the physical properties. Firstly, we noted that the density of the surface and bulk voids as well as their average dimensions are dramatically reduced on increasing the Zr content in Nb$_3$Sn. These surface voids are believed to be detrimental to cavity applications due to increase the local dissipation of electric and magnetic fields. These results indicate that inclusion of Zr in Nb$_3$Sn sputtered coating will improve the material quality and might help to reduce the overall RF power dissipation. Secondly, we observed that increasing Zr concentration from 0 to 2.4% substantially improves both superconducting transition temperature (Tc) and upper critical magnetic field (Hc2). However, on further increasing the Zr concentration to 24%, we noticed a small decrement in the Hc2 value. These results infer that the increase in Zr concentration up to an optimal concentration will be beneficial to enhance the superconducting properties. Increase in Tc promises lesser RF losses and improvement in accelerating gradient, whereas the increase in Hc2 suggests more efficient flux pinning which could give rise to high quality factors in presence of multi-Tesla magnetic field. Additionally, we also observed that increasing Zr concentration possibly prevents the oxygen diffusion and leads to thinner formation of primary surface oxide (Nb$_2$O$_5$ and SnO). This study gives a route to tune Zr fraction in Nb3Sn to modify the physical properties that control the high field performance of Nb3Sn RF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1989

Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide films

Voided growth structures of sputter-deposited films affect strongly their optical and electrical properties. Vanadium dioxide is an interesting material to study effects of film microstructure and nonstoichiometry on electrical properties because its phase transition makes it possible to investigate electrical behavior both in a semiconducting phase and in a metallic phase. Vanadium oxide films were deposited with different vanadium oxygen ratios for substrate temperatures between 250 and 550 C by dc reactive magnetron sputtering. The resistivity ratios between a semiconducting phase and a metallic phase are limited to 1000 order by voided boundaries and oxygen vacancies. The voided boundaries are defined by columnar structure and agglomerated grain growth. The results emphasize the necessity of a combination of deposition to obtain the film with a favorable structure and postdeposition annealing to control the film stoichiometry.

Kusano, Eiji↗
DOE OSTI2026

Optimization of Nb 3 Sn sputtering on SRF structures

Superconducting radiofrequency (SRF) cavities are the key technology to compact, high-efficiency, and cost-effective CW SRF accelerators. Further improvements in the efficiency can be realized by using novel materials such as Nb 3 Sn coated on the inner surface of SRF cavities. The Nb 3 Sn coatings enable cavity operation at 4 K, where the Nb 3 Sn coated cavities are already very efficient and have high intrinsic quality factors. Advances in Nb3Sn coatings on the inner surface of SRF cavities showed the potential for this material to significantly cut the capital and operating costs of SRF accelerators. Several approaches have been and are being investigated for coating SRF cavities with Nb 3 Sn. Magnetron sputtering is a versatile technique in that it has been shown to produce Nb 3 Sn films on flat Nb target in a single phase and a precisely controlled thickness, low defect levels, and a favorable morphology. Deposition of Nb 3 Sn films on SRF cavities have also shown promising RF superconducting properties. However, sputter coating of Nb 3 Sn on SRF cavities requires further development to be used in accelerators.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Fast X-ray Nanotomography with Sub-10 nm Resolution as a Powerful Imaging Tool for Nanotechnology and Energy Storage Applications

In the last decade, transmission X-ray microscopes (TXMs) have come into operation in most of the synchrotrons worldwide. They have proven to be outstanding tools for non-invasive ex and in situ 3D characterization of materials at the nanoscale across varying range of scientific applications. However, their spatial resolution has not improved in many years, while newly developed functional materials and microdevices with enhanced performances exhibit nanostructures always finer. Here, optomechanical breakthroughs leading to fast 3D tomographic acquisitions (85 min) with sub-10 nm spatial resolution, narrowing the gap between X-ray and electron microscopy, are reported. These new achievements are first validated with 3D characterizations of nanolithography objects corresponding to ultrahigh-aspect-ratio hard X-ray zone plates. Then, this powerful technique is used to investigate the morphology and conformality of nanometer-thick film electrodes synthesized by atomic layer deposition and magnetron sputtering deposition methods on 3D silicon scaffolds for electrochemical energy storage applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlled Growth of Single‐Crystal Graphene Wafers on Twin‐Boundary‐Free Cu(111) Substrates

Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, in this study, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm 2 V −1 s −1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Underlying Substrate Effect on Electrochemical Activity for Hydrogen Evolution Reaction with Low‐Platinum‐Loaded Catalysts

Platinum is known as the best catalyst for the hydrogen evolution reaction (HER) but the scarcity and high cost of Pt limit its widespread applicability. Herein, the role of the underlying substrate on the HER activity of dispersed Pt atoms is uncovered. A direct current magnetron sputtering technique is utilized to deposit transition metal (TM) thin films of W, Ti, and Ta as underlying substrates for extremely low loading of Pt (<1.5 at%). The electrocatalytic performance of as‐synthesized samples for the HER is examined in both alkali and acidic media. The results show that despite the low loading of Pt, the Pt/TM catalysts produce hydrogen at a rate comparable to that of pristine bulk Pt. Pt/TM catalysts also display good stability with less than 5% decay in performance after 10 h of continuous HER operation. Based on the computational study, the excellent performance is attributed to the modified electronic properties of the Pt atoms, offering ideal binding energy for HER due to interaction with the underlying substrates. This work provides a robust and industry‐friendly route toward designing efficient catalytic systems for important electrochemical reactions such as HER and others.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗