Optical and photoelectric properties of thin metallic films in the vacuum ultraviolet.
Optical and photoelectric properties of thin tin films in vacuum UV
METAL FILM↗
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Integrated microwave acousto-optic frequency shifter on thin-film lithium niobate
Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an active frequency shifting loop. Our integrated acousto-optic platform leads to the development of on-chip optical routing, isolation, and microwave signal processing.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Magneto-optic investigation of MnBi films.
Another variation in the preparation of MnBi films from double layers of the constituents is reported. The dependence of Faraday and Kerr rotations on both composition and film thickness in these films suggests a model wherein a reacted double layer is made up of four separate layers. The variance in magneto-optic constants of MnBi reported here and previously is resolved in terms of this model.
Lewicki, G.↗
Development of optical coatings for cds thin film solar cells second quarterly report, 1 mar. - 1 jun. 1965
Optical coatings for cadmium sulfide thin film solar cells
CADMIUM SULFIDE↗
Excitation of Bloch Surface Waves in Zero-Admittance Multilayers for High-Sensitivity Sensor Applications
The growing need for classical as well as quantum optical sensing places increasingly stringent requirements upon the desired characteristics of the engendered fields. Specifically, achieving superior field enhancement plays a critical role in applications ranging from chem-bio sensing, Raman and infrared spectroscopies to ion trapping and qubit control in emerging quantum-information science. Due to their low optical losses and ability to exhibit resonant field enhancements, all dielectric multilayers are emerging as an optical material system not only useful to classical photonics and sensing but also of potential to be integrated with quantum materials and quantum sensing. The recently introduced concept of zero-admittance layers [1] within dielectric multilayer materials, enables the creation and control of resonant fields orders of magnitude larger than the exciting field. Here, invoking the zero-admittance concept, we design, fabricate, and characterize an all-dielectric nonabsorbing stack and demonstrate the engendered huge field enhancement. Describing the fields in terms of Bloch surface waves, we connect the surface field to the semiperiodicity in the dielectric domains of the stack. As a specific application of the resonant field, we propose and demonstrate refractive-index sensing for the detection of trace amounts of an analyte. The results include a quantification of the sensitivity of the device with respect to the profile of the exciting field. The experimental results are shown to be in good agreement with theoretical calculations.
47 OTHER INSTRUMENTATION↗
Combinatorial investigation of the Mn–Ge–N chemical system containing ternary nitrides Mn 3 GeN and MnGeN 2
By changing nitrogen chemical potential during synthesis of Mn–Ge–N ternary nitrides, both wurtzite MnGeN 2 and antiperovskite Mn 3 GeN ternary phases are prepared. Antiperovskite films are optically opaque and conductive, while wurtzite films with Mn/(Mn + Ge) ≤ 0.5 transmit light above ~ 2 eV. Alloys of Mn 3 GeN with Si and Al are also investigated. Mn 3 (Ge 1−x Al x )N alloys with 0.07 ≤ x ≤ 0.16 exhibit a cubic (rather than tetragonal) structure. Mn 3 (Ge 1−x Si x )N with x ≤ 0.05 maintains the tetragonal structure but becomes cubic when x > 0.05. This study shows that care must be taken in the synthesis of Mn–Ge–N and similar nitrides, especially when materials are integrated into devices not amenable to structural and chemical probing.
36 MATERIALS SCIENCE↗
Low Energy Ionizing Radiation and Plasma Contributions to Radiation Dose in Materials at Sun-Earth Lagrange Points
- High energy radiation environments responsible for radiation damage to thick materials are well characterized and modeled: - Galactic cosmic rays — Badhwar-O’Neil 2020, CREME96, Nymmik - Solar particle events — Emission of Solar Protons, SAPPHIRE, JPL, King 1972 - Trapped radiation belts — AE8/AP8, AE9/AP9/IRENE - Low energy radiation environments responsible for radiation damage to thin materials relevant to Lagrange points and interplanetary missions have not been treated as comprehensively to date: - Solar wind - Magnetosheath - Magnetotail - Concern to spacecraft design and operations is radiation damage to surfaces and thin materials with mission critical applications on exterior of spacecraft - Applications: thermal control coatings, sunshields, multilayer insulation, optical thin film coatings, solar sails, thermo-optical properties of space exposed materials - Damage processes: radiation degradation (total dose), light ion sputtering, proton blistering of soft metals, modification of optical properties (α/ε), modification of charging properties (SEY, surface conductivity)
Joseph I. Minow↗
Reversible Oxidation Quantified by Optical Properties in Epitaxial Fe2CrO4+d Films on (001) MgAl2O4
We report on the structural and optical properties of Fe2CrO4+d epitaxial films grown by molecular beam epitaxy on MgAl2O4 (001) as a function of ?. The average Fe valence can be correlated with the out-of-plane lattice parameter and the extent of light absorption in the infrared spectral region. Over-oxidized films (0 < d < 0.5) exhibit reduced lattice parameters and suppressed infrared absorption. We discuss the behavior of a novel infrared transition at ~0.6 eV in stoichiometric Fe2CrO4 films deposited on MgAl2O4 (MAO) at or above 400 °C. This research provides new insight into the atomic structure, optical processes, oxidation states, electronic structure, and application potentials of Fe2CrO4+d.
ellipsometry, Epitaxy, thin film, oxidation, reduc↗
Nonlinear Optical Properties of Organic and Polymeric Thin Film Materials of Potential for Microgravity Processing Studies
In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.
Abdeldayem, Hossin↗
TiN‐Au/HfO 2 ‐Au Multilayer Thin Films with Tunable Hyperbolic Optical Response
Abstract Hyperbolic metamaterials (HMM) possess significant anisotropic physical properties and tunability and thus find many applications in integrated photonic devices. HMMs consisting of metal and dielectric phases in either multilayer or vertically aligned nanocomposites (VAN) form are demonstrated with different hyperbolic properties. Herein, self‐assembled HfO 2 ‐Au/TiN‐Au multilayer thin films, combining both the multilayer and VAN designs, are demonstrated. Specifically, Au nanopillars embedded in HfO 2 and TiN layers forming the alternative layers of HfO 2 ‐Au VAN and TiN‐Au VAN. The HfO 2 and TiN layer thickness is carefully controlled by varying laser pulses during pulsed laser deposition (PLD). Interestingly, tunable anisotropic physical properties can be achieved by adjusting the bi‐layer thickness and the number of the bi‐layers. Type II optical hyperbolic dispersion can be obtained from high layer thickness structure (e.g., 20 nm), while it can be transformed into Type I optical hyperbolic dispersion by reducing the thickness to a proper value (e.g., 4 nm). This new nanoscale hybrid metamaterial structure with the three‐phase VAN design shows great potential for tailorable optical components in future integrated devices.
Chemistry↗
Structure and optical properties of evaporated films of the Cr- and V-group metals
Thin films of Cr, Mo, and W rapidly evaporated in high vacuum (5 x 10 to the -7th torr) onto room-temperature substrates show anomalously low reflectance (compared to bulk samples). From electron and X-ray diffraction and electron microscopy, the normal bcc crystal structure is found, but with very fine grains. Columnar grains about 100 A in diameter were separated by a less dense grain-boundary network about 10-A wide. The measured optical conductivity agrees with an inhomogeneous-medium model that assumes the normal crystalline conductivity for the grain interiors, with model parameters that correlate to the observed columnar grain size. In contrast, V and Nb films rapidly evaporated onto room-temperature substrates have the reflectance of bulk crystalline material. On liquid-nitrogen temperature substrates, however, V and Nb have normal bcc crystal structure but with small flat-plate grains, and the same model, with appropriate parameters, accounts for the optical conductivity. The difference between these two groups apparently depends on residual gases segregated at the grain boundaries in the Cr-group films.
Nestell, J. E., Jr.↗
Optical characterization of contaminant film
The so called 'nicotine stain' documented at many locations on the Long Duration Exposure Facility is still unexplained as to the exact origin and mechanism of deposition, although enough is known to have some understanding of the conditions coincident for the formation of the deposits. Direct and scattered atomic oxygen flux, and solar ultraviolet radiation interacting with materials outgassing products have all been implicated in the formation of the dark brown contamination deposits. The nicotine stain represents a potential of performance degradation for spacecraft designed for long term operation in low Earth orbit and therefore, a need exists to characterize this form of spacecraft self contamination and quantify the impact on thermal/optical systems. Optical property measurements in the spectral range of 2 to 10 microns were performed on specimens of the contaminated film. Reflectance measurements of the contaminant film as deposited on the surface and as free standing films are presented along with transmission spectra for the bulk material. Thickness measurements along with micrographic examination of the cross section of the deposit reveal the layered structure of the deposit which further implicates solar illumination as a factor in the deposition mechanism.
Blakkolb, Brian K.↗
Optical and electrical characterizations of laser-chemical-vapor-deposited aluminum oxynitride films
Composition-dependent optical and electrical properties of L-CVD (Al2O3)1-c-(AlN)c composite films are examined. The optical properties exhibit a continuous change from Al2O3 to AlN with increasing value of the composition parameter c from zero to one. There is a critical concentration value of about 0.3 below and above which Al2O3- and AlN-like optical properties are observed. The impurity absorption regions are 5.1-6.7 eV for Al2O32 and 4.6-6.0 for AlN, while the energy gap is about 6.7 eV for Al2O3 and 6.0 eV for AlN. The electrical properties of Al-insulator n-Si MIS structures display externally programmable states when bulk-controlled electron emission occurs from the traps. In the high-field region a persistent polarization field is established within the insulator. C-V characteristics of the samples are more sensitive to the concentration factor c than the I-V characteristics. A large clockwise hysteresis is observed for AlN, but a smaller counterclockwise one is observed for Al2O3.
Demiryont, H.↗
Mid-Infrared Photoluminescence from Tellurium Thin Films
Tellurium is an elemental semiconductor with a 0.34 eV optical band gap, showing promise for mid-infrared (MIR) optoelectronics including light-emitting diodes. However, quantitative measurement of the tellurium luminescence efficiency has not yet been investigated, and growing optically active films remain challenging. Here, we demonstrate the low-temperature growth of bright tellurium thin films by using physical vapor transport. The sample morphology is controlled by varying the growth temperature, yielding continuous thin films, microparticles, or nanowires. Additionally, we demonstrated patterned growth by using a seed layer for selective nucleation. Quantitative photoluminescence measurements at room temperature reveal an internal quantum yield of 2.0% at 0.34 eV for the as-grown tellurium films, comparable to the best-reported efficiencies of III-V and II-VI compound semiconductors with similar band gaps. Furthermore, we demonstrate band-gap tunability with Te-Se alloys, where up to 20% selenium incorporation gradually blue-shifts the band gap to 0.55 eV. The work demonstrates the potential use of tellurium for efficient MIR devices.
Wang, Shu↗
Colorless Polyimide Containing Phenoxy-Linked Diamines
Tough, optically transparent films produced. Polyimides having this molecular structure form tough, transparent films. Films made transparent by careful control of manufacturing conditions, including use of highly purified monomers. Need for high-temperature, flexible polymeric films and coating materials that have high optical transparency in 300- to 600nm range of electro-magnetic spectrum for use on antennas, solar cells, and thermalcontrol coatings.
St. Clair, A. K.↗
Chemical-Vapor Deposition Of Cd1-xMnxTe
Experimental process makes films with interesting magnetic and magneto-optical properties. Films of dilute magnetic semiconductor alloy Cd1-xMnxTe deposited on glass and GaAs substrates by metalorganic chemical-vapor deposition (MOCVD). Devices made with Cd1-xMnxTe films known to exhibit strong photoluminescence, stimulated emission, and magnetically-tunable lasing action. In addition, energy-band gaps of such material tailored by altering its composition - property giving flexibility in development of high-efficiency cascade solar photovoltaic cells. Performs at atmospheric pressure, resulting in more-uniform films, covering larger area, and enabling higher production rate.
Nouhi, Akbar↗
Optical response of an ultrathin film and a large-angle grain-boundary in superconducting YBa2Cu3O(7-delta)
We have investigated the optical response of epitaxial ultrathin (3 nm) YBa2Cu3O(7-delta) film on an NdGaO3 substrate and thin (50 nm) film of YBa2Cu3O(7-delta) on a bicrystal SrTiO3 substrate. While the current-voltage characteristics of the ultrathin film indicate a Kosterlitz-Thouless transition (associated with vortex-antivortex unbinding) at a temperature T(KT), we do not observe any optical response at or below T(KT). An enhanced optical response with nonbolometric characteristics was observed from the grain-boundary as compared to the bolometric optical response of the epitaxial film at the resistive transition. These results indicate that the grain-boundary weak links play a significant role in the enhanced optical response near Tc.
Bhattacharya, S.↗
Buried-Electrode Hybrid Bonded Thin-Film Lithium Niobate Electro-Optic Mach-Zehnder Modulators
Hybrid bonded silicon nitride thin-film lithium niobate (TFLN) Mach-Zehnder modulators (MZMs) at 1310 nm were designed with metal coplanar waveguide electrodes buried in the silicon-on-insulator (SOI) chip. Here, the MZM devices showed greatly improved performance compared to earlier devices of a similar design, and similar performance to comparable MZM devices with gold electrodes made on top of the TFLN layer. Both devices achieve a 3-dB electro-optic bandwidth greater than 110 GHz and voltage-driven optical extinction ratios greater than 28 dB. Half-wave voltage-length products (VπL) of 2.8 and 2.5 V∙ cm were measured for the 0.5 and 0.4 cm long buried metal and top gold electrode MZMs, respectively.
42 ENGINEERING↗