Search NASA⌕ Search

SEARCH · Search NASA

Results for “optoelectronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

A Chemical and Structural Study of the AlN-Si Interface

The growth of low defect density heteroepitaxial AlN has great implications for optoelectronic and high power devices since the AlN can be used either as device material or as a buffer layer for the overgrowth of other group-III nitrides. In this work, the results of transmission electron microscopy (TEM) involving both high resolution imaging and electron energy loss spectroscopy (EELS) of AlN/Si layers is reported and the relationship between Si-Al-N interactions and the misorientation of AlN nuclei is elucidated.

epitaxial optoelectronic silicon gallium nitride↗
NASA NTRSDate not supplied

Photonics for Space Flight Instruments

For the past 25 years, the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center’s Photonics Group in the Engineering Directorate has been substantially contributing to the flight design, development, production, testing and integration of many science and navigational instruments. The group has an extensive background in screening, qualifying, development and integration of commercial components for spaceflight applications. They have been willing to communicate lessons learned in packaging, part construction, materials selection, testing, and other facets of the design and production process critical to implementation for high-reliability systems. Summarized here is the last ten years of instrumentation development lessons learned and data collected from the subsystems down to the optoelectronic component level.

Spaceflight↗
NASA NTRSDate not supplied

Photonics for Space Flight Instruments

The Photonics group top level processes regarding development and qualification of space flight hardware for optoelectronic components and optical systems along with our contributions and successes with LIDAR systems, space flight reliability heritage, and our testing capabilities are conveyed with this power point presentation.

Optoelectronics components↗
NASA NTRS1965

Electro-optic crystals and their use for light modulation

Several methods of modulating a beam of light, which have been described in the literature, utilizing the influence of an electrical signal on the birefringence of certain crystals, will be reviewed. These employ optics which respond to the state of polarization of a light beam, and include intensity modulation, position modulation, and the possibility of an electrically tuned optical filter. The influence of the piezo-optic, or strain contribution to the total electro-optic response in the design of an optoelectronic device will be discussed. Current experimental work in our laboratory in which the strain contribution is separated from the direct effect will be described. The strain-free effect is measured by applying a step voltage to the crystal, and observing the initial response. The electro-optical transient response can be observed with nanosecond time resolution. An electronic sampling technique is used to extract the desired response from photon noise. The stress-free or low-frequency effect is measured similarly but at low audio frequencies. Single crystal tetragonal BaT10 3 has been investigated in detail with the result that the strain-optic contribution to the low frequency effect r_(c) = r_(33)—r_(13) is about 80% of the total, where it is only 10% in KDP and 45% in ADP. The magnitudes of the electro-optic effect, dielectric constant, and other related properties are compared for several materials potentially useful as electro-optic modulators, and some comments are made about the practical problems of building a modulator.

ELECTRO-OPTICS↗
NASA NTRS1977

Electro-optically-indexed microwave switch

Mechanical parts used in conventional switches to index stepper motor that drives switch elements are replaced by optoelectronic indexing device that controls magnetic-detent motor. Unit eliminates major source of wear and maintains detent accuracy longer. Design of device achieves reduction of insertion loss, crosstalk, and wave guide reflections when receiving and transmitting.

Neff, D. E.↗
NASA NTRS1979

Film-advance monitor

Device checks film advancement in remote cameras by adding optoelectronic sensor and idler spocket with beam-breaker disk. Monitor is helpful to operators of cameras placed in hostile environments.

Dreisback, F. R.↗
NASA NTRS1983

Miniature Two-Axis Joystick Controller

Novel movable-button-actuated self-centering controller uses optoelectronics to produce X and Y signals for aircraft control. In addition to be extremely compact, device puts our voltages having high signal-to-noise ratio, especially at critical center position where in many controllers this ratio is poorest. Combination of new saddle-shaped button and positive centering gives "feel" and "breakout" met with pilot approval.

Hollow, R.↗
NASA NTRS1983

Use of the Space Shuttle for remote sensing experimentation during the 1980's

Planned and possible future experiments that may be conducted on Space Shuttle missions of the mid and later 1980s are discussed. Remote sensing experiments will be performed on Shuttle missions STS-7, STS-9, STS-11, and STS-17, and will conduct surveys using the Modular Optoelectronic Multispectral Scanner, a multispectral linear array imager; a high-resolution metric photographic camera; the Microwave Remote Sensing experiment, with capabilities for passive and active operation as an X-band radiometer, scatterometer or synthetic aperture radar; the Large Format Camera, a high-resolution photogrammetric camera with forward motion compensation; and the four experiments of the OSTA-3 payload: Shuttle Imaging Radar-B, the Measurement of Air Pollution from Space experiment, the Feature Identification and Location Experiment, and the Large Format Camera. Conceptual plans for experiments that may be conducted in the latter part of the decade include a high spectral resolution imaging sensor, multispectral radar surveys, and multispectral measurements in the thermal infrared.

Settle, M.↗
NASA NTRS1985

Short-Range Digital Optical Links

Concept based on multiple optoelectronic chips. Proposed network of semiconductor lasers used for communication and radar. Network includes small integrated transmitters, receivers, and data processors placed at strategic points on station and vehicles.

Dickinson, R. M.↗
NASA NTRS1983

Crystal growth of device quality GaAs in space

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Gatos, H. C.↗
NASA NTRS1984

Future directions in optical processing

Three aspects of optical processing are discussed. The three aspects are: (1) the potential of this emerging technology; (2) the major limitations preventing wide scale implementation of optical processors and the importance of future research in these areas is emphasized; (3) the importance of nonlinear optics in developing optoelectronic interconnects for VLSI.

Neff, J. A.↗
NASA NTRS1986

Wide-Brightness-Range Video Camera

Television camera selectively attenuates bright areas in scene without affecting dim areas. Camera views scenes containing extremes of light and dark without overexposing light areas and underexposing dark ones. Camera uses liquid-crystal light valve for selective attenuation. Feedback cathoderay tube locally alters reflection characteristics of liquid-crystal light valve. Results in point-to-point optoelectronic automatic gain control to enable viewing of both dark and very bright areas within scene.

Craig, G. D.↗
NASA NTRS1986

Flowmeter for Clear Fluids

Electronic flowmeter measures flow rate of clear or translucent fluids. Instrument produces electrical signal proportional to volume of fluid flowing through it per unit time. Optoelectronic instrument generates electrical signal proportional to fluid-flow rate.

White, P. R.↗
NASA NTRS1984

Measurement of high temperature strain by the laser-speckle strain gauge

By using the laser-speckle strain gauge, the strain of metal at the temperature lower than 250 C is measured. The principle of the gauge is to measure the expansion or contraction of the fine structures of surface by detecting the resultant speckle displacement in an optoelectronic way, whereby the effect of rigid-body motion is automatically cancelled out with the aid of a differential detection system. A transportable apparatus was built and a comparison experiment performed with a resistance strain gauge at room temperature. It has a strain sensitivity of .00002, a gauge length smaller than 1 mm, and no upper limit in a range of strain measurement. In the measurement of high-temperature strain it is free from the need for a dummy gauge and insensitive to an electric drift effect. As examples of strain measurement at high-temperature, thermal expansion and contraction of a top of a soldering iron are measured. The interval of the measurement can be made at shortest 1.6 sec. and the change in the strain is clearly followed until the ultimate stationary temperature is reached.

Yamaguchi, I.↗