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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

The Effect of Oxidation in Environmental Barrier Coatings Subject to Foreign Object Damage

Oxidation and foreign object damage (FOD) are two key failure modes for environmental barrier coatings (EBCs). For EBCs with a silicon (Si) bond coat, a thermally grown oxide (TGO) layer forms at the EBC –bond coat interface. The TGO layer is considered the weak interface, and directly influences the life of the EBC. Moreover, FOD has been shown to cause significant subsurface damage resulting in delamination or spallation of the EBC which can occur at the EBC -bond coat interface or the bond coat -substrate interface. The purpose of this work is to investigate the synergistic effects of oxidation and FOD in a ytterbium disilicate (𝑌𝑏2𝑆𝑖2𝑂7) EBC. FOD testing is conducted on as-deposited and steam oxidized samples at room temperature using a 1.59-mm hardened steel ball projectile. The resulting damage is characterized by optical profilometry and scanning electron microscopy (SEM). Additionally, a quasi-static, mechanical assessment of the EBC bond strength in the presence of a growing TGO is presented.

environmental barrier coatings (EBCs)↗
NASA NTRS1991

Protective Al2O3 scale formation on NbAl3-base alloys

The oxidation of NbAl3 with additions of Cr and Y was studied to determine the mechanisms of the beneficial effects of these elements upon oxidation. Cr additions to the binary NbAl3 alloy of up to 6.8 at. percent reduced the scale growth rates and promoted alpha-Al2O3 formation over much longer times relative to binary NbAl3. A major effect of Cr is to form a layer of AlNbCr at the metal/scale interface, which is inherently more oxidation-resistant than the matrix alloy in the long term. Yttrium additions to a Cr-containing alloy improved the scale growth rate and adherence and changed the scale microstructure to mimic that of a typical protective Al2O3 scale.

Doychak, J.↗
NASA NTRS1983

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Dharmadhikari, V. S.↗
NASA NTRS1980

XPS studies of structure-induced radiation effects at the Si/SiO2 interface

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Grunthaner, F. J.↗
NASA NTRS1993

Biogeochemical cycles of carbon, sulfur, and free oxygen in a microbial mat

Complete budgets for carbon and oxygen have been constructed for cyanobacterial mats dominated by Microcoleus chthonoplastes from the evaporating ponds of a salt works. We infer from the data the various sinks for O2 as well as the sources of carbon for primary production. Although seasonal variability exists, a major percentage of the O2 produced during the day did not diffuse out of the mat but was used within the mat to oxidize both organic carbon and the sulfide produced by sulfate reduction. At night, most of the O2 that diffused into the mat was used to oxidize sulfide, with O2 respiration of minor importance. During the day, the internal mat processes of sulfate reduction and O2 respiration generated as much or more inorganic carbon (DIC) for primary production as diffusion into the mat. Oxygenic photosynthesis was the most important process of carbon fixation. At night, the DIC lost from the mat was mostly from sulfate reduction. Elemental fluxes across the mat/brine interface indicated that carbon with an oxidation state of greater than zero was taken up by the mat during the day and liberated from the mat at night. Overall, carbon with an average oxidation state of near zero accumulated in the mat. Both carbon fixation and carbon oxidation rates varied with temperature by a similar amount.

Canfield, Donald E.↗
NASA NTRS2011

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗
NASA NTRS1985

Thermal barrier coating life prediction model development

A methodology was established to predict thermal barrier coating life in an environment simulative of that experienced by gas turbine airfoils. Specifically, work is being conducted to determine failure modes of thermal barrier coatings in the aircraft engine environment. Analytical studies coupled with appropriate physical and mechanical property determinations are being employed to derive coating life prediction model(s) on the important failure mode(s). An initial review of experimental and flight service components indicates that the predominant mode of TBC failure involves thermomechanical spallation of the ceramic coating layer. This ceramic spallation involves the formation of a dominant crack in the ceramic coating parallel to and closely adjacent to the metal-ceramic interface. Initial results from a laboratory test program designed to study the influence of various driving forces such as temperature, thermal cycle frequency, environment, and coating thickness, on ceramic coating spalling life suggest that bond coat oxidation damage at the metal-ceramic interface contributes significantly to thermomechanical cracking in the ceramic layer. Low cycle rate furnace testing in air and in argon clearly shows a dramatic increase of spalling life in the non-oxidizing environments.

Sheffler, K. D.↗
NASA NTRS1987

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

Grunthaner, P. J.↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
NASA NTRS1987

Methane oxidation and methane fluxes in the ocean surface layer and deep anoxic waters

Measured biological oxidation rates of methane in near-surface waters of the Cariaco Basin are compared with the diffusional fluxes computed from concentration gradients of methane in the surface layer. Methane fluxes and oxidation rates were investigated in surface waters, at the oxic/anoxic interface, and in deep anoxic waters. It is shown that the surface-waters oxidation of methane is a mechanism which modulates the flux of methane from marine waters to the atmosphere.

Ward, B. B.↗
NASA NTRS1993

Surface chemistry of liquid metals

The fundamental surface chemistry of the behavior of liquid metals spreading on a solid substrate is not at all well understood. Each of these questions involves knowing the details of the structure of interfaces and their dynamics. For example the structure of a monolayer of tin oxide on pure liquid tin is unknown. This is in contrast to the relatively large amount of data available on the structure of copper oxide monolayers on solid, pure copper. However, since liquid tin has a vapor pressure below 10(exp -10)torr for a reasonable temperature range above its melting point, it is possible to use the techniques of surface science to study the geometric, electronic and vibrational structures of these monolayers. In addition, certain techniques developed by surface chemists for the study of liquid systems can be applied to the ultra-high vacuum environment. In particular we have shown that light scattering spectroscopy can be used to study the surface tension tensor of these interfaces. The tin oxide layer in particular is very interesting in that the monolayer is rigid but admits of bending. Ellipsometric microscopy allows the visualization of monolayer thick films and show whether island formation occurs at various levels of dosing.

Mann, J. Adin, Jr.↗
NASA NTRS1985

Studies of the Si/SiO2 interface using synchrotron radiation

Synchrotron radiation photoemission spectroscopy (SRPS) in the 1-4 KeV photon energy range is a useful tool for interface characterization. Results are presented of a series of studies of the near-interface region of Si/SiO2 which confirm that a bond strain gradient exists in the oxide as a result of lattice mismatch. These experiments include measurement of photoemission lineshape changes as a function of photon energy, corresponding changes in the electron escape depth near the interface, and surface extended X-ray absorption fine structure (SEXAFS) measurements directly indicating the shortening of the Si-Si second nearest neighbor distance in the near-interface region of the oxide.

Hecht, M. H.↗
NASA NTRS1993

A carbon isotope mass balance for an anoxic marine sediment: Isotopic signatures of diagenesis

A carbon isotope mass balance was determined for the sediments of Cape Lookout Bight, NC to constrain the carbon budgets published previously. The diffusive, ebullitive and burial fluxes of sigma CO2 and CH4, as well as the carbon isotope signatures of these fluxes, were measured. The flux-weighted isotopic signature of the remineralized carbon (-18.9 plus or minus 2.7 per mil) agreed with the isotopic composition of the remineralized organic carbon determined from the particulate organic carbon (POC) delta(C-13) profiles (-19.2 plus or minus 0.2), verifying the flux and isotopic signature estimates. The measured delta(C-13) values of the sigma CO2 and CH4 diffusive fluxes were significantly different from those calculated from porewater gradients. The differences appear to be influenced by methane oxidation at the sediment-water interface, although other potential processes cannot be excluded. The isotope mass balance provides important information concerning the locations of potential diagenetic isotope effects. Specifically, the absence of downcore change in the delta(C-13) value of the POC fraction and the identical isotopic composition of the POC and the products of remineralization indicate that no isotopic fractionation is expressed during the initial breakdown of the POC, despite its isotopically heterogeneous composition.

Boehme, Susan E.↗
NASA NTRS1995

Thermal barrier coating life modeling in aircraft gas turbine engines

Analytical models useful for predicting ceramic thermal barrier coating (TBC) spalling life in aircraft gas turbine engines are presented. Electron beam-physical vapor deposited (EB-PVD) and plasma sprayed TBC systems are discussed. TBC spalling was attributed to a combination of mechanisms such as metal oxidation at the ceramic-metal interface, ceramic-metal interface stress concentrations at free surfaces due to dissimilar materials, ceramic-metal interface stresses caused by local radius of curvature and interface roughness, material properties and mechanical behavior, transient temperature gradients across the ceramic layer and component design features. TBC spalling life analytical models were developed based on observations of TBC failure modes and plausible failure theories. TBC failure was assumed to occur when the imposed stresses exceeded the material strength (at or near the ceramic-metal interface). TBC failure knowledge gaps caused by lack of experimental evidence and analytical understanding are noted. The analytical models are considered initial engineering approaches that capture observed TBC failure trends.

Nissley, D. M.↗
NASA NTRS1995

Thermal barrier coating life modeling in aircraft gas turbine engines

Analytical models for predicting ceramic thermal barrier coating (TBC) spalling life in aircraft gas turbine engines are presented. Electron beam-physical vapor deposited (EB-PVD) and plasma sprayed TBC systems are discussed. An overview of the following TBC spalling mechanisms is presented: metal oxidation at the ceramic-metal interface, ceramic-metal interface stress singularities at edges and corners, ceramic-metal interface stresses caused by radius of curvature and interface roughness, material properties and mechanical behavior, temperature gradients, component design features and object impact damage. TBC spalling life analytical models are proposed based on observations of TBC spalling and plausible failure theories. TBC spalling was assumed to occur when the imposed stresses exceed the material strength (at or near the ceramic-metal interface). TBC failure knowledge gaps caused by lack of experimental evidence and analytical understanding are noted. The analytical models are considered initial engineering approaches that capture observed TBC failure trends.

Nissley, David M.↗
NASA NTRS2007

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Hunter, G. W.↗