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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

The Effects of Manufacturing Techniques on Neutron-Irradiated C26M Mechanical Properties

Nuclear energy provides 13% of the total energy produced globally. To further improve the safety and reliability of nuclear reactors material challenges need to be successfully resolved. C26M/FeCrAl alloy systems can improve the safety and reliability of current Generation III reactors due to the potential benefits of a stable passivation layer from the Al, which can protect against corrosion, and promising mechanical performance at boiling- and light-water reactor temperatures. However, information is limited on how manufacturing techniques affect the mechanical performance of C26M in neutron-irradiated environments. In this research, C26M specimens were manufactured using three techniques and then irradiated at the Advanced Test Reactor at Idaho National Laboratory. This research aims to bridge this gap by investigating how the manufacturing techniques affects the mechanical performance of irradiated C26M at Generation III reactor relevant temperatures.

36 - MATERIALS SCIENCE↗

Time-Evolved Hetero-Alkali Interphases Enable Long-Life Sulfide-Based Anode-Free Solid-State Batteries

Sulfide-based anode-free solid-state batteries (AFSSBs) offer compelling advantages in terms of energy density and safety, yet their practical implementation is severely hindered by undesirable interfacial reactions between sulfide solid electrolytes (SEs) and freshly plated lithium (Li), as well as non-uniform Li plating/stripping behavior. Herein, an effective interfacial stabilization strategy by incorporating sodium bis(fluorosulfonyl)imide (NaFSI) additive into the Li5.4PS4.4Cl1.6 (LPSC) is investigated. Unlike conventional Li-based additives that form static passivation layers, NaFSI introduces a transient hetero-alkali chemistry that kinetically governs interphase evolution during fresh Li plating. NaFSI induces a timesequenced interphase evolution: an initial NaF/LiF-rich layer that suppresses early sulfide reduction, followed by a LiF/Li3N-rich layer that optimizes Li⁺ transport during repeated anode-free cycling. This evolved robust and fast ion conducting layer mitigates interfacial impedance growth, enhances Li + transport kinetics, and suppresses localized Li growth and filamentary shorting. As a result, the anode-free full cell with NaFSI modified LPSC as the interlayer exhibits an excellent cycling stability over 500 cycles at 0.2 C with a capacity retention of 77.6%, whereas the cell with bare LPSC suffers from rapid capacity decay after 100 cycles, retaining only 32.1% of its initial capacity. This work establishes dynamic heteroalkali additive chemistry as a general strategy to kinetically program solid-solid interphases, guiding the interface design in anode-free solid-state batteries.

25 ENERGY STORAGE↗

Al 2 O 3 Thin Films on Magnesium: Assessing the Impact of an Artificial Solid Electrolyte Interphase

Among the many emerging technologies under investigation as alternatives to the successful Lithium-ion battery, the magnesium battery is promising due to the wide availability of magnesium, its high volumetric capacity, and the possibility for safety improvements. One of the largest challenges facing rechargeable magnesium batteries is the formation of a passivation layer at the Mg metal anode interface when reactive species in the electrolyte are reduced at the electrode-electrolyte interface. To control the solid electrolyte interphase in Lithium batteries, protective layers called artificial solid electrolyte interphase (ASEI) layers have been successful in improving Li metal anode performance. The approach of protecting Mg metal anodes from electrolyte degradation has been demonstrated by fewer studies in the literature than Li systems. In this work, we discuss the properties of Al 2 O 3 thin films deposited using atomic layer deposition as an artificial solid electrolyte interphase at the Mg anode. Our results demonstrate that Al 2 O 3 does prevent electrolyte degradation due to the reductive nature of Mg. However, undesirable properties such as defects and layer breakdown lead to Mg growth that causes soft-shorting. The soft-shorting occurs with and without the protection layer, indicating the ALD layer does not prevent it and hinders Al 2 O 3 from being an ideal candidate for a protection layer. Crucial effects of this layer on Mg electrochemistry at the interface were observed, including growth of Mg deposits leading to soft-shorting of the cell whose morphology showed a dependence on the Al 2 O 3 layer. These results may provide guidelines for the future design and development of protective ASEI layers for Mg anodes.

25 ENERGY STORAGE↗

Radiation tolerant silicon nitride insulated gate field effect transistors

Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

Newman, P. A.↗

Design, processing, and testing of LSI arrays for space station

The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bit random access memory (RAM) was reported. Previous success with the aluminum-gate current-sense version and a silicon-gate voltage-sense version led to the present effort to make a beam-leaded silicon-gate RAM. Some problems unique to the silicon-on-sapphire beam-lead process development are presented. Beam-leaded SOS TA5388 devices using a Si3N4 passivation layer were shown to have good electrical parameters.

Schneider, W. C.↗

A mosaic infrared sensor for space astronomy, phase 3

Short wavelength (1 to 3 micron) HgCdTe mosaic detector arrays for space astronomy purposes were fabricated and studied. Honeywell will test and analyze these arrays at moderate temperatures (300-130K). Low temperature testing will be performed at the University of Hawaii. Short wavelength mosaic arrays were fabricated on three wafers and one array from each wafer was tested and analyzed. The p-type base carrier concentration on these wafers was an order of magnitude lower than typically used so far on this program (10 to the 14/cc as compared to 10 to the 15/cc). Tunneling currents are expected to decrease with this decrease in carrier concentration, resulting in improved performance at very low temperatures. The risk with such a low carrier concentration is that fixed charge in the surface passivating layer must be carefully controlled to prevent surface inversion layers.

Sood, A. K.↗

ZnSe Films in GaAs Solar Cells

ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.

Kachare, Ram H.↗

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Neudeck, P. G.↗

Properties Of Plasma-Deposited Amorphous Hydrogenated Carbon

Report reviews experimental research on plasma-deposited films of hydrogenated amorphous carbon. Such films exhibit electrical resistivity, semi-transparency, mechanical hardness, and chemical inertness. Useful as gate dielectrics and passivating layers in semiconductor devices, insulators for metal/insulator/metal devices, and masks in nanometer lithography. Show promise as wear-resistant, hard solid lubricating coats for bearings and optical components.

Miyoshi, Kazuhisa↗

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Macinnes, Andrew N.↗

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Jenkins, Phillip P.↗

Reliability assessment of multiple quantum well avalanche photodiodes

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Yun, Ilgu↗

The Impact on Space Radiation Requirements and Effects on ASIMS

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

Barnes, C.↗

Hydrogen Effects on GaAs, Status and Progress

It has been observed that GaAs devices in hermetically sealed packages when exposed to temperatures as low as 125oC can exhibit unacceptable degradation in both RF and DC characteristics. The source of the problem was found to be hydrogen that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics. Most of the data indicates the onslaught of the problem to occur after 500 hours at 125oC. This onslaught has been observed to be dependent on the thickness and processing conditions of the passivation layer, the sealing environment, and the amount of Pt or Pd in the gate structure of the device.

Hydrogen GaAs↗

Percentage Contributions from Atmospheric and Surface Features to Computed Brightness Temperatures

Over the past few years, a few solid precipitation detection and retrieval algorithms have been developed and shown to be applicable for snowing clouds and blizzards. Current precipitating snow retrieval algorithms require the use of millimeter-wave radiometer observations. The millimeter-wave frequencies are especially sensitive to the scattering and emission properties of frozen particles due to the ice particle refractive index. These channels can also be used to discern information about the frozen particles above the melting layer. Passive radiometric channels respond to both the integrated particle mass throughout the volume and field of view, and to the amount, location, and size distribution of the frozen (and liquid) particles with the sensitivity varying for different frequencies and hydrometeor types. This work will show the percentage of the brightness temperature resulting from the liquid hydrometeor, frozen hydrometeor, relative humidity, and surface contributions. The focus will be on precipitating snow events and millimeter-wave frequencies however, other events and frequencies will be included in the analysis.

SkofronickJackson, Gail↗

Back-illuminated imager and method for making electrical and optical connections to same

Methods for bringing or exposing metal pads or traces to the backside of a backside-illuminated imager allow the pads or traces to reside on the illumination side for electrical connection. These methods provide a solution to a key packaging problem for backside thinned imagers. The methods also provide alignment marks for integrating color filters and microlenses to the imager pixels residing on the frontside of the wafer, enabling high performance multispectral and high sensitivity imagers, including those with extremely small pixel pitch. In addition, the methods incorporate a passivation layer for protection of devices against external contamination, and allow interface trap density reduction via thermal annealing. Backside-illuminated imagers with illumination side electrical connections are also disclosed.

Pain, Bedabrata↗

Self-Passivating Lithium/Solid Electrolyte/Iodine Cells

Robust lithium/solid electrolyte/iodine electrochemical cells that offer significant advantages over commercial lithium/ iodine cells have been developed. At room temperature, these cells can be discharged at current densities 10 to 30 times those of commercial lithium/iodine cells. Moreover, from room temperature up to 80 C, the maximum discharge-current densities of these cells exceed those of all other solid-electrolyte-based cells. A cell of this type includes a metallic lithium anode in contact with a commercial flexible solid electrolyte film that, in turn, is in contact with an iodine/ graphite cathode. The solid electrolyte (the chemical composition of which has not been reported) offers the high ionic conductivity needed for high cell performance. However, the solid electrolyte exhibits an undesirable chemical reactivity to lithium that, if not mitigated, would render the solid electrolyte unsuitable for use in a lithium cell. In this cell, such mitigation is affected by the formation of a thin passivating layer of lithium iodide at the anode/electrolyte interface. Test cells of this type were fabricated from iodine/graphite cathode pellets, free-standing solid-electrolyte films, and lithium-foil anodes. The cathode mixtures were made by grinding together blends of nominally 10 weight percent graphite and 90 weight percent iodine. The cathode mixtures were then pressed into pellets at 36 kpsi (248 MPa) and inserted into coin-shaped stainless-steel cell cases that were coated with graphite paste to minimize corrosion. The solid-electrolyte film material was stamped to form circular pieces to fit in the coin cell cases, inserted in the cases, and pressed against the cathode pellets with polyethylene gaskets. Lithium-foil anodes were placed directly onto the electrolyte films. The layers described thus far were pressed and held together by stainless- steel shims, wave springs, and coin cell caps. The assembled cells were then crimped to form hermetic seals. It was found that the solid electrolyte films became discolored within seconds after they were placed in contact with the cathodes - a result of facile diffusion of iodine through the solid electrolyte material (see figure).

Bugga, Ratnakumar↗