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Prevention of test cell migration beyond the field of observation involves confining cells or cultures in microlagoons made in either a layer of grease or a thermoplastic substrate. Thermoplastic films or dishes are easily imprinted with specifically designed patterns of microlagoons.
Thin and thick film test specimens were utilized to study the effects of silicone and epoxy hybrid microcircuit coatings on 0.025 mm diameter aluminum and gold ultrasonic bonds, and 0.051 diameter gold pulsed-thermocompression bonds. Chip-to-substrate and substrate-to-substrate geometries were included. Because sealed packages were utilized, a test pattern design was incorporated that allowed the determination of bond failures by making resistance measurements external to the package after the various environmental tests. All wire bonds were non-destructively pull tested prior to sealing. Tests included the PIN test, temperature cycling, and high temperature storage.
A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.
A collection of papers and presentations authored by the branch between June 1989 and June 1990 is presented. The papers are organized into four sections. Section 1 deals with research in microwave circuits and includes full integrated circuits, the demonstration of optical/RF interfaces, and the evaluation of some hybrid circuitry. Section 2 indicates developments in coplanar waveguides and their use in breadboard circuits. Section 3 addresses high temperature superconductivity and includes: thin film deposition, transport measurement of film characteristics, RF surface resistant measurements, substrate permittivity measurements, measurements of microstrip line characteristics at cryogenic temperatures, patterning of superconducting films, and evaluation of simple passive microstrip circuitry based on YBaCuO films. Section 4 deals with carbon films, silicon carbide, GaAs/AlGaAs, HgCdTe, and other materials.
Silicon micromachining etching techniques were utilized to batch-fabricate hundreds of general purpose microaccelerometers on a single silicon substrate. Piezoresistive sensing elements were aligned to the back-side patterns using an IR mask aligner and then diffused into the areas of maximum stress. Capping of the two-arm cantilever beam structure was achieved using a combination of electrostatic bonding and low temperature glass films. Overrange protection, critical damping, and overall protection from the outside environment are achieved by controlling the cavity depths of the top and bottom covers. Temperature compensation, amplification, and filtering are performed by a companion LSI chip that is interfaced to the accelerometer by conventional wire-bonding techniques.
Integrated circuits that incorporate square arrays of superconducting-transition- edge bolometers with optically reflective backshorts are being developed for use in image sensors in the spectral range from far infrared to millimeter wavelengths. To maximize the optical efficiency (and, thus, sensitivity) of such a sensor at a specific wavelength, resonant optical structures are created by placing the backshorts at a quarter wavelength behind the bolometer plane. The bolometer and backshort arrays are fabricated separately, then integrated to form a single unit denoted a backshort-under-grid (BUG) bolometer array. In a subsequent fabrication step, the BUG bolometer array is connected, by use of single-sided indium bump bonding, to a readout device that comprises mostly a superconducting quantum interference device (SQUID) multiplexer circuit. The resulting sensor unit comprising the BUG bolometer array and the readout device is operated at a temperature below 1 K. The concept of increasing optical efficiency by use of backshorts at a quarter wavelength behind the bolometers is not new. Instead, the novelty of the present development lies mainly in several features of the design of the BUG bolometer array and the fabrication sequence used to implement the design. Prior to joining with the backshort array, the bolometer array comprises, more specifically, a square grid of free-standing molybdenum/gold superconducting-transition-edge bolometer elements on a 1.4- m-thick top layer of silicon that is part of a silicon support frame made from a silicon-on-insulator wafer. The backshort array is fabricated separately as a frame structure that includes support beams and contains a correspond - ing grid of optically reflective patches on a single-crystal silicon substrate. The process used to fabricate the bolometer array includes standard patterning and etching steps that result in the formation of deep notches in the silicon support frame. These notches are designed to interlock with the support beams on the backshort-array structure to provide structural support and precise relative positioning. The backshort-array structure is inserted in the silicon support frame behind the bolometer array, and the notches in the frame serve to receive the support beams of the backshort-array structure and thus determine the distance between the backshort and bolometer planes. The depth of the notches and, thus, the distance between the backshort and bolometer planes, can be tailored to a value between 25 to 300 m adjusting only a few process steps. The backshort array is designed so as not to interfere with the placement of indium bumps for subsequent indium bump-bonding to the multiplexing readout circuitry
A facility that includes a probe station and a scanning open-ended waveguide probe for measuring near electromagnetic fields has been added to Glenn Research Center's suite of antenna-testing facilities, at a small fraction of the cost of the other facilities. This facility is designed specifically for nondestructive characterization of the radiation patterns of miniaturized microwave antennas fabricated on semiconductor and dielectric wafer substrates, including active antennas that are difficult to test in traditional antenna-testing ranges because of fragility, smallness, or severity of DC-bias or test-fixture requirements. By virtue of the simple fact that a greater fraction of radiated power can be captured in a near-field measurement than in a conventional far-field measurement, this near-field facility is convenient for testing miniaturized antennas with low gains.
Impact craters can serve as probes of the subsurface structure of a planetary body and provide hints about a target's properties. Crater morphology, for example, can be used to estimate the thickness of a regolith layer above a more competent unit. Small lunar craters in the maria show a morphological progression from a simple bowl shape to flat-floored and concentric as crater diameter increases for a given regolith thickness. The final shape is a result of the subsurface flow-field initiated as the projectile transfers its energy and momentum to the target surface. In strength-layered targets, such as the lunar maria, the substrate modifies the flow field and thereby the excavation of the crater. Here we report on a series of experimental impacts into targets composed of a layer of loose sand above a stronger substrate. As we varied the sand's thickness, we imaged individual ejecta trajectories as the craters grew, from which we derived ejection-speed scaling relationships. In addition, we used a 3D scanner to construct topographic maps of the substrate, pre-impact target, and post-impact surface. This permitted us to examine the final craters' morphologies and morphometries with respect to the original stratigraphy of the target. As expected, craters became shallower and smaller as the sand's thickness decreased, transitioning from bowl-shaped to concentric as observed on the Moon. Subtle and important details show that the stronger substrate affected the subsurface flow-field by redirecting material upward and outward even when the interface was still well below the final crater's floor. Compared to the control target (loose sand only), the stronger substrate below the sand layer resulted in a much more complex pattern of ejecta. While most of the ejected material was still contained within a typical outward-moving curtain, a number of ejected particles moved along low-speed, high-angle (near 90°) trajectories. The number of these high-angle trajectories increased as the sand layer thinned, perhaps implying that self-secondary cratering would require the presence of a strong subsurface layer below the impact site. Such results refine our understanding of crater excavation in layered targets with implications for ejecta deposits and final crater shapes observed on the Moon.
A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.
Imaging biological molecules such as DNA at rates several times faster than conventional imaging techniques is carried out using a patterned silicon wafer having nano-machined grooves which hold individual molecular strands and periodically spaced unique bar codes permitting repeatably locating all images. The strands are coaxed into the grooves preferably using gravity and pulsed electric fields which induce electric charge attraction to the molecular strands in the bottom surfaces of the grooves. Differential imaging removes substrate artifacts.
The design parameters of a microstrip antenna were studied to determine its performance characteristics as affected by an atmospheric entry probe environment. The technical literature was reviewed to identify the known design and performance characteristics. These data were used to evaluate the expected effects of mission environments on the microstrip antenna design proposed for the Saturn/Uranus Atmospheric Entry Probe (SAEP). Radiation patterns and VSWR measurements were made to evaluate the performance in the SAEP thermal environment. Results of the literature search and pattern tests confirm that the microstrip antenna is a good choice as a transmitting antenna on the SAEP. The microstrip antenna is efficient, compact, and well suited to a space environment. The pattern can be controlled with a minimum beamwidth of 60 degrees (air substrate; e.g., honeycomb structure) and a maximum on the order of 100 degrees with higher dielectric constant substrates. The power handling capacity is good and can be improved by covering the antenna with a dielectric cover.
Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.
Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.
Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to growth is reported. The thin cantilevers form after pure stepflow growth removes almost all atomic steps from the top surface of a mesa, after which additional adatoms collected by the large step-free surface migrate to the mesa sidewall where they rapidly incorporate into the crystal near the top of the mesa sidewall. The lateral propagation of the step-free cantilevered surface is significantly affected by pregrowth mesa shape and orientation, with the highest lateral expansion rates observed at the inside concave comers of V-shaped pregrowth mesas with arms lengthwise oriented along the {1100} direction. Complete spanning of the interiors of V's and other mesa shapes with concave comers by webbed cantilevers was accomplished. Optical microscopy, synchrotron white beam x-ray topography and atomic force microscopy analysis of webbed regions formed over a micropipe and closed-core screw dislocations show that c-axis propagation of these defects is terminated by the webbing. Despite the nonoptimized process employed in this initial study, webbed surfaces as large as 1.4 x 10(exp -3) square centimeters, more than four times the pregrowth mesa area, were grown. However, the largest webbed surfaces were not completely free of bilayer steps, due to unintentional growth of 3C-SiC that occurred in the nonoptimized process. Further process optimization should enable larger step-free webs to be realized.
MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.
Homoepitaxial CVD growth of thin lateral cantilevers emanating from the edges of mesa patterns dry-etched into on-axis commercial 4H-SiC substrates prior to growth is reported. Cantilevers on the order of a micrometer thick extending tens of micrometers from the edge of a mesa have been grown. The termination of vertically propagating screw dislocations, including a micropipe, that are overgrown by the cantilevers has been demonstrated, in large part because the crystal structure of the cantilevers is established laterally from the mesa sidewalls. This technique could help reduce performance-degrading dislocations in SiC electrical devices.
Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).
A method of fabrication of wires having micron and submicron dimensions is built around electrochemical deposition of the wires in their final positions between electrodes in integrated circuits or other devices in which the wires are to be used. Heretofore, nanowires have been fabricated by a variety of techniques characterized by low degrees of controllability and low throughput rates, and it has been necessary to align and electrically connect the wires in their final positions by use of sophisticated equipment in expensive and tedious post-growth assembly processes. The present method is more economical, offers higher yields, enables control of wire widths, and eliminates the need for post-growth assembly. The wires fabricated by this method could be used as simple electrical conductors or as transducers in sensors. Depending upon electrodeposition conditions and the compositions of the electroplating solutions in specific applications, the wires could be made of metals, alloys, metal oxides, semiconductors, or electrically conductive polymers. In this method, one uses fabrication processes that are standard in the semiconductor industry. These include cleaning, dry etching, low-pressure chemical vapor deposition, lithography, dielectric deposition, electron-beam lithography, and metallization processes as well as the electrochemical deposition process used to form the wires. In a typical case of fabrication of a circuit that includes electrodes between which microscopic wires are to be formed on a silicon substrate, the fabrication processes follow a standard sequence until just before the fabrication of the microscopic wires. Then, by use of a thermal SiO-deposition technique, the electrodes and the substrate surface areas in the gaps between them are covered with SiO. Next, the SiO is electron-beam patterned, then reactive-ion etched to form channels having specified widths (typically about 1 m or less) that define the widths of the wires to be formed. Drops of an electroplating solution are placed on the substrate in the regions containing the channels thus formed, then the wires are electrodeposited from the solution onto the exposed portions of the electrodes and into the channels. The electrodeposition is a room-temperature, atmospheric-pressure process. The figure shows an example of palladium wires that were electrodeposited into 1-mm-wide channels between gold electrodes.