Tribological properties of sintered polycrystalline and single-crystal silicon carbide
Previously announced in STAR as N82-24343
Miyoshi, K.↗
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The single crystal elastic constants of hexagonal SiC to 1000 C
The relationships between the sound velocities in the cubic and hexagonal crystal structures and the tensor transformations for the two structures are applied to determine the elastic stiffnesses for the hexagonal structures of SiC to 1000 C. These results are then applied to calculate the polycrystalline elastic moduli, E and G, and their temperature variations. The calculated values for E and G at 20 C are 420 and 180 GPa; for (dE/dT) and (dG/dT), the values are -0.020 and -0.007 GPa/C, respectively.These agree well with published experimental values for E and G of dense polycrystalline alpha silicon carbides.
Li, Z.↗
Micromechanical stresses in SiC-reinforced Al2O3 composites
Applying an Eshelby (1957) approach, the internal micromechanical stresses within an SiC-inclusion-reinforced (platelet to whisker geometries) polycrystalline alumina matrix composite were calculated. The results are compared to the experimental residual stress measurements of a SiC-whisker-reinforced Al2O3 by Predecki, et al. (in press) and found to be in excellent agreement. The calculations are then extended to SiC-reinforced composites with polycrystalline mullite, silicon nitride, and cordierite matrices. It is concluded that the internal stresses are significantly influenced by the inclusion geometry as well as the thermoelastic differences between the inclusion and the matrix and also the volume fraction.
Li, Zhuang↗
Inorganic Photovoltaics Materials and Devices: Past, Present, and Future
This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.
Hepp, Aloysius F.↗
Degradation Mechanisms in TOPCon/POLO Solar Cells
This presentation shows how Poly-Si/SiO2 contacts show a post firing degradation/regeneration cycle. The following conclusions were made: 1) cycle changes surface passivation (Jo), but not the bulk lifetime; 2) cycle time depends on anneal temperature in light or dark (higher T, faster cycle); 3) 400 degrees Celsius anneal eliminates the cycle - only generation occurs; 4) cycle time and magnitude is not correlated with Tfire; 5) contact passivation is stable after cycling; 6) fundamental nature of defect(s) responsible is not known; 7) TOPCon cells/modules, if constructed well, seem to show minimal degradation issues (PVEL, Jolywood, Jinko, ET Solar), and 8) NREL/ASU are studying TOPCon cells and UC Davis has a molecular dynamics model for TOPCon.
degradation↗
Industrialization study, phase 2
The potentials and requirements of advanced photovoltaic technologies still in their early developmental stages were evaluated and compared to the present day single crystal silicon wafer technology and to each other. The major areas of consideration include polycrystalline and amorphous silicon, single crystal and polycrystalline gallium arsenide, and single crystal and polycrystalline cadmium sulfide. A rank ordering of the advanced technologies is provided. The various ranking schemes were based upon present-day efficiency levels, their stability and long-term reliability prospects, material availability, capital investments both at the laboratory and production level, and associated variable costs. An estimate of the timing of the possible readiness of these advanced technologies for technology development programs and industrialization is presented along with a set of recommended government actions concerning the various advanced technologies.
Source record↗
Silicon film solar cell process
The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.
Hall, R. B.↗
Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction
Friction studies were conducted with a silicon carbide (0001) surface contacting polycrystalline iron. The surface of silicon carbide was pretreated: (1) by bombarding it with argon ions for 30 minutes at a pressure of 1.3 pascals; (2) by heating it at 800 C for 3 hours in vacuum at a pressure of 10 to the minus eighth power pascal; or (3) by heating it at 1500 C for 3 hours in a vacuum of 10 to the minus eighth power pascal. Auger emission spectroscopy was used to determine the presence of silicon and carbon and the form of the carbon. The surfaces of silicon carbide bombarded with argon ions or preheated to 800 C revealed the main Si peak and a carbide type of C peak in the Auger spectra. The surfaces preheated to 1500 C revealed only a graphite type of C peak in the Auger spectra, and the Si peak had diminished to a barely perceptible amount. The surfaces of silicon carbide preheated to 800 C gave a 1.5 to 3 times higher coefficient of friction than did the surfaces of silicon carbide preheated to 1500 C. The coefficient of friction was lower in the 11(-2)0 direction than in the 10(-1)0 direction; that is, it was lower in the preferred crystallographic slip direction.
Miyoshi, K.↗
Continuous method of producing silicon carbide fibers
This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.
Barnard, Thomas Duncan↗
Chemical vapor deposition growth
A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.
Ruth, R. P.↗
Improved Silicon-Growth Chamber
Silicon-growth technique, based on coating ceramic substrates with thin layer of molten silicon solidifies to form polycrystalline film, modified to produce solar-cell quality silicon sheet.
Heaps, J. D.↗
Advances in large area polycrystalline solar cells
Polycrystaline silicon is presently routinely processed into low cost 10 cm by 10 cm solar cells. However assuming minimal handling difficulties, only minor equipment modifications and no increase in processing complexity, the fabrication of even larger geometries would be economically advantageous. This investigation addressed the feasibility of developing 10 cm by 15 cm solar cells from research through pilot line production stages. The major thrust was to minimize costing by using existing production equipment and proven techniques wherever possible. Accordingly methods were developed to section larger substrates from existing cast ingots, a simple solar cell was designed and low cost processes implemented. After numerous preliminary experiments, pilot line production of 1500 cells was completed. Of these approximately 62 percent exhibited efficiencies greater than 7.0 percent, 53 percent were greater than 8.0 percent and 15 percent were greater than 9.0 percent. Based on this study, the regular production of 10 cm by 15 cm solar cells was determined to be both feasible and cost effective using existing processing methods.
Vendura, G. J., Jr.↗
X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress
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99 GENERAL AND MISCELLANEOUS↗
Impact of soiling on Si and CdTe PV modules: Case study in different Brazil climate zones
Soiling, particulate accumulation on photovoltaic (PV) module surfaces, reduces the available solar resource and the resulting generated device power. This case-study summarizes initial results of 5-year research on the contrasting soiling conditions in the tropical, subtropical, and semi-arid climates in Brazil. A major objective is to present a case study of the effects of soiling on PV module performance in different Brazil climate zones that represent the primary areas for the current and expanding Brazil solar installations. For this, the paper presents methodologies to quantify the soiling ratio (SRatio) and soiling rate (SRate) for two representative commercial technologies, polycrystalline or multicrystalline silicon (mc-Si) and thin-film cadmium telluride (CdTe) modules, through soiling monitoring stations deployed in the selected climate regions. An aim is to add to the growing soiling-research knowledge base through addressing these key factors and their relationships to critical electrical, solar resource, thermal, and local meteorological and environmental parameters. This paper presents, evaluates, and compares soiling rates and losses in Belo Horizonte, Minas Gerais (Equatorial Tropical: 19.92° S, 43.99° W), Porto Alegre, Rio Grande do Sul (Humid-Subtropical: 30.05° S, 51.17° W), and Brotas de Macaúbas, Bahia (Semi-Arid: 12.00° S, 42.63° W). The results show that soiling is moderate in all 3-regions, for example with 0.1%/day < SRate < 0.2%/day for Belo Horizonte. Precipitation dominates the cleaning of the modules in the summertime in this climate zone, while it is the major factor year-round in Rio Grande do Sul. Wind is the major issue mitigating the soiling accumulation for the Bahia installation. The methodology incorporates several key refinements, including the normalization and adjustment for the meteorological parameters (temperature, irradiance, wind, precipitation). The evaluations include the region-specific differing effects of non-uniform soiling, natural cleaning, and ambient temperatures.
14 SOLAR ENERGY↗
Evaluation of silicon-on-ceramic material for low-cost solar cells
The silicon-on-ceramic (SOC) process produces thin layers of silicon on inexpensive ceramic substrates. The layers are produced by unidirectional solidification of molten silicon, and are polycrystalline. Solar cells made from SOC material have performed with a conversion efficiency of 10.5%. In connection with the objective to improve the efficiency of SOC solar cells, an investigation was conducted to assess the relative importance of grain boundaries and impurities. In order to separate the two effects, light-beam-induced current (LBIC) measurements of the short-circuit current were made using a micron-sized light beam from a monochromator. The LBIC measurements are closely related to solar cell performance since the technique identifies the various spatial and spectral contributions to solar cell current. On the basis of the obtained results, it appears that structural defects are more important than chemical defects in limiting the performance of present SOC solar cells.
Zook, J. D.↗
Epitaxial solar cells on low-cost silicon substrates
This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.
Robinson, P. H.↗
Surface chemistry and friction behavior of the silicon carbide (0001) surface at temperatures to 1500 deg C
X-ray photoelectron and Auger electron spectroscopy analyses and friction studies were conducted with a silicon carbide (0001) surface in contact with iron at various temperatures to 1200 or 1500 C in a vacuum of 10 to the minus 8th power Pa. The results indicate that there is a significant temperature influence on both the surface chemistry and friction properties of silicon carbide. The principal contaminant of adsorbed amorphous carbon on the silicon carbide surface in the as received state is removed by simply heating to 400 C. Above 400 C, graphite and carbide type carbine are the primary species on the silicon carbide surface, in addition to silicon. The coefficients of friction of polycrystalline iron sliding against a single crystal silicon carbide (0001) surface were high at temperatures to 800 C. Similar coefficients of friction were obtained at room temperature after the silicon carbide was preheated at various temperatures up 800 C. When the friction experiments were conducted above 800 C or when the specimens were preheated to above 800 C, the coefficients of friction were dramatically lower. At 800 C the silicon and carbide type carbon are at a maximum intensity in the XPS spectra. With increasing temperature above 800 C, the concentration of the graphite increases rapidly on the surface, whereas those of the carbide type carbon and silicon decrease rapidly.
Miyoshi, K.↗
Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics
A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.
14 SOLAR ENERGY↗