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DOE OSTI2020

Estimate of Lorentz force effects on charged particles

Thermonuclear (TN) fusion reaction between deutrons are D + D → T + P D + D → 3 He + n where P is the proton, D is the deuteron, T is the triton, n is the neutron, and 3 He is the helion. They are born with high energies (0.82 MeV for 3 He, 1.01 MeV for T, 3.02 MeV for P, and 2.45 MeV for n). The charged particles slow down due to the drag force (stopping power). While slowing down, the charged particles deposit their energy, which may affect the TN burn characteristics. When magnetic field is present, the velocity of the charged particle would be affected due to the Lorentz force, which can affect the stopping of the charged particle. As a consequence, TN burn characteristics may change, Our purpose is to asses the importance of the Lorentz force in stopping of the charged particle, based on a simple comparison between the Lorentz force and stopping power.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

High-Energy and High-Power NMP-Free, Designer NMC 811 Cathodes with Ultra-Thick Architectures Processed by Electrophoretic Deposition

This project focused on electrode engineering and reducing the weight of inactive components in the battery cells. Additionally, the project focused on optimizing the ‘electrophoretic deposition’ technique developed by PPG industries for aqueous processing of electrodes. During this project team has screened several binders suitable for electrophoretic deposition of electrodes. Additionally, we developed a nice strategy to deposit a low cost and scalable oxide coating on the surface of cathode materials. ORNL team performed the research under this CRADA at DOE’s Battery Manufacturing Facility (BMF) at ORNL.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2025

High-Energy and High-Power NMP-Free, Designer NMC 811 Cathodes with Ultra-Thick Architectures Processed by Electrophoretic Deposition

25 ENERGY STORAGE↗

DOE OSTI2022

Influence of Copper Composition on Cu 2 BaSn(S,Se) 4 Solution-Deposited Films and Photovoltaic Devices with Over 5% Efficiency

Cu 2 BaSn(S,Se) 4 is currently in the spotlight for prospective environmentally friendly, stable, thin-film solar cell application, with demonstrated device power conversion efficiency (PCE) exceeding 5% for vacuum-deposited absorbers. As suggested by first-principles calculations, experimental studies involving related Cu 2 ZnSn(S,Se) 4 and Cu(In,Ga)(S,Se) 2 absorbers prove that the detailed chemical composition typically plays a sensitive role in altering defects and electronic properties of these complicated compound semiconductors. Herein, the copper composition of Cu 2 BaSn(S,Se) 4 has been systematically modified, employing a solution-based deposition approach, to provide a more complete picture of the phase stability and optoelectronic property sensitivity for this material. X-ray diffraction and scanning electron microscopy show that phase purity is preserved over a film Cu content range of nominally 0.94 ≤ [Cu]/[Ba + Sn] ≤ 1.01. Terahertz spectroscopy and Hall effect measurements reveal that the majority carrier hole density of ~10 13 cm –3 and mobility (~5 cm 2 /V s), as well as the minority carrier lifetime (a bulk lifetime of 180 ps and a surface recombination velocity >106 cm/s), are nominally independent of Cu content. The champion PCEs exceed 4.7% for all copper compositions in the phase-pure region, with a record value of 5.1%, similar to the reported values for record vacuum-deposited devices. Furthermore, these results suggest that Cu 2 BaSn(S,Se) 4 films and solar cells (at the current performance level) may be less sensitive to Cu stoichiometry compared to kesterite materials and therefore may provide a more stable material platform to prepare thin-film solar cells.

(CBTSSe)↗

DOE OSTI2020

Diamond encapsulated silicon optical fibers synthesized by chemical vapor deposition

Semiconductor optical fibers encapsulated in a protective diamond coating can theoretically lead to immense power handling capabilities and infrared functionality. Here, silicon optical fibers are grown using high pressure chemical vapor deposition before being coated by 50 μm–300 μm of diamond by microwave plasma-assisted chemical vapor deposition. This coating extends conformally around the fiber cross section with diamond crystallites in the film on the order of several micrometers. Complete coating of high-quality diamond around the fiber is indicated by scanning electron microscopy and Raman measurements. The encapsulated silicon fibers are durable enough to survive the diamond deposition process, as demonstrated by their ability to guide infrared light.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Co-Extrusion (CoEx) for Cost Reduction of Advanced High-Energy-and-Power Battery Electrode Manufacturing

Co-Extrusion (CoEx) is a deposition technology developed at PARC that uses engineered fluidic channels to cause multiple streams of dissimilar fluids to impart shape to one another. Here, we describe the use of CoEx to produce structured cathode electrode films to improve electrochemical performance of thick electrode films. CoEx enables us to create structured electrode films that have periodic regions of enhanced ionic conductivity, enabling higher utilization of thicker cathode films at high discharge rates. While increasing electrode thickness is a known method for increasing energy density of battery electrodes, this increase in energy density typically also results in reduced power density. This project, a collaboration between the Palo Alto Research Center, Oak Ridge National Laboratories, and Ford Motor Company, seeks to first validate the benefits of CoEx at the coin cell level, before performing the necessary R&D effort to scale production up to large (10+ Ah) pouch cells that will show increased energy density without a reduction in power density. We used conventional battery materials (commercially available NMC, PVDF, carbon black, and graphite) to produce structured electrodes via CoEx and compared them to thick and thin conventionally produced (unstructured) battery electrodes. CoEx electrodes show improved high rate performance compared to unstructured electrodes, resulting in higher energy density pouch cells compared to the baseline electrode of 7 and 11% in volumetric and gravimetric energy density, respectively. These electrodes also showed substantially improved electrochemical performance at high discharge rates compared to thick conventional electrodes.

25 ENERGY STORAGE↗

DOE OSTI2021

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

Atomic layer deposition (ALD) modification of ultra-high-aspect-ratio structures (>10,000:1) is a powerful platform with applications in catalysis, filtration, and energy conversion. However, the deposition of conformal and tunable ALD coatings at these aspect ratios remains challenging, resulting in empirical tradeoffs between precursor utilization and reaction time. Here, we demonstrate tunable control of the ALD infiltration depth into an aerogel monolith (AM) and develop a reaction-diffusion model to accurately describe the coating process. Specifically, we investigate the ALD exposure time and precursor dose needed to conformally coat a silica AM with pore sizes of ~20 nm, a monolith thickness of ~2.5 mm, and aspect ratios exceeding 60,000:1. We demonstrate complete infiltration into the AM, which is quantified by elemental mapping. A reaction-diffusion model is developed, which accounts for multiple doses and precursor depletion in the ALD chamber during an exposure step. The experimentally validated model enables the prediction and tuning of infiltration depth into a tortuous, high-aspect-ratio structure such as an AM, allowing for the synthesis of rationally designed material architectures. Additionally, the model allows for co-optimization of the total deposition time and percentage of unreacted precursor, which are important for the manufacturability and sustainability of ALD processing. Lastly, we demonstrate that ultra-thin ALD Al 2 O 3 coatings can be used to stabilize silica AMs against structural degradation under high-temperature annealing conditions (700-800 °C), by limiting changes in surface area and monolith volume. As a result, this improved high-temperature stability has implications for numerous aerogel applications, including catalysis and thermal insulation.

14 SOLAR ENERGY↗

DOE OSTI2021

Additive manufacturing of cobalt-based alloy on tool steel by directed energy deposition

Cladding hard-surfacing alloys on tool steel is an effective approach to enhance the surface properties of tool steel. In this study, a Co-based alloy was deposited on tool steel by Directed Energy Deposition (DED) following a three-factor three-level design of experiment matrix with varied laser power, scan speed, and powder flow rate. The microstructure of the deposits was characterized using scanning electron microscopy (SEM). The residual stress on the surface of the samples was measured by the X-ray diffraction (XRD) sin2? technique. The parameters that produced promising deposits were used to fabricate samples for tensile test, four-point bending test, Charpy impact test, and hardness measurement. Our result reveals that the processing parameters have a significant role in the residual stress of the coatings. Residual stress reduces with the increase of laser energy density. Cracks were found at samples with energy density below a threshold. Tensile testing of the coating/substrate combined structure reveals fracture at the coatings with an ultimate tensile strength of 633.9 ± 54.7 MPa. The bi-material interface survived the tensile test, indicating a strong interfacial bond. The four-point bending test of coating/substrate laminates shows an ultimate flexure strength of 860.6 ± 36.9 MPa. Cracks initiated from the coatings ignored the interface and penetrated the substrate, suggesting a solid bi-material bond. Charpy impact test shows the absorbed energy of coating/substrate laminates is more than doubled that of the substrate.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Over 11% Efficient Eco-Friendly Kesterite Solar Cell: Effects of S-Enriched Surface of Cu2ZnSn(S,Se)4 Absorber and Band Gap Controlled (Zn,Sn)O Buffer

For high efficiency kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell, CdS thin film was usually used as a buffer layer. However, due to the toxicity of Cd and pollution problems involved from the solution-based chemical bath deposition, eco-friendly high efficiency CZTSSe solar cell with Cd-free buffer is necessary. As an Cd-free buffer layer, we investigated (Zn,Sn)O (ZTO) film deposited by sputtering method. In order to achieve high power conversion efficiency, we controlled energy band gaps of CZTSSe absorber as well as ZTO buffer, which was required to optimize conduction band offset (CBO) between the absorber and the buffer and to increase open circuit voltage (Voc) and fill factor (FF). The CBO was optimized by controlling the band gap of ZTO. By varying the Sn/(Zn + Sn) ratio and its deposition temperature, band gap of ZTO was successfully adjusted. Experimental and computational calculation results showed that solar cell performance was strongly affected by the CBO between absorber and buffer. Besides CBO matching, larger band gap of ZTO improved short circuit current density (Jsc) with enhanced external quantum efficiency value in blue photon spectrum range. As an additional way to improve power conversion efficiency of solar cell, band graded CZTSSe absorber was developed by using spray-based two-step process. The sprayed CZTSSe film was engineered to have S-enriched surface, which makes surface band gap widened and surface passivated, and resultantly increases Voc, Jsc and fill factor (FF). By controlling band gaps of both CZTSSe absorber and ZTO buffer, we obtained 11.22% environment-friendly CZTSSe solar cell without MgF2 anti-reflection coating.

(Zn↗

DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗

DOE OSTI2023

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2021

Sensitivity analysis of in-pile critical heat flux experiments in TREAT for characterization of RIA power-transient effects

A reactivity-initiated accident (RIA) is one type of postulated design basis accident (DBA) that can cause a departure from nucleate boiling (DNB) event in pressurized-water reactors (PWRs). A DNB occurrence and its consequences depend on the thermophysical properties of the fuel components and coolant, characteristics of the transient energy insertion into the fuel rod, and the onset of the critical heat flux (CHF) phenomenon. To leverage the restart of the Transient Reactor Test (TREAT) Facility, an effort is currently underway to better understand the cladding-to-coolant heat transfer mechanisms and the CHF phenomenon under fast-transient irradiation conditions. This paper characterizes the impact of power transients on the thermal-hydraulic behavior of a TREAT Facility reactor heater rodlet CHF experiment to provide the priority of parameters that need to be investigated for an improved CHF model. Sobol sensitivity analysis methods and the Reactor Excursion and Leak Analysis Program (RELAP5-3D) code were used to identify key input parameters on the uncertainty in the prediction of peak outer- and inner-surface temperatures of the heater tube, as well as the time of the DNB event. A series of sensitivity analyses revealed the total energy deposition on the tube and the transient effects of power pulse had large impacts on the maximum temperatures. The CHF multiplier had the largest impact on the time occurrence of CHF. The overall results show the energy deposition rate in the tube is the most influencing factor to the manifestation of CHF and the resulting thermal-hydraulic behaviors of the tube. The multiplier for the CHF, which is interpreted as the predicted CHF value, has the largest Sobol indices for the time of the CHF in all cases, since it directly determines the occurrence of CHF. It is inferred that the uncertainties in the thermal-hydraulic behaviors of fuels increase with respect to the key parameters as the power pulse becomes broader, and an accurate estimation of the energy deposition rate is required to reduce the uncertainty in the evaluation of the integrity of fuel if the CHF is expected to occur near the peak power. Therefore, the outputs are expected to provide rigorous interpretation of ongoing in-pile CHF experiments in the TREAT Facility reactor regarding thermal-hydraulic behavior of the fuel system aiming for a new transient in-pile CHF model.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2022

A Stochastic Transport Model for the Cumulative Number of Fissions and Deposited Fission Energy

The stochastic theory of neutron transport is extended to describe the cumulative distribution of fission numbers and deposited fission energy in a multiplying assembly. Solutions for the probability distributions are obtained using analytical approximations and Monte Carlo simulation in lumped geometry and in symmetric homogeneous and heterogeneous spheres. The results show the development of a power-law tail in the steady state fission number and deposited energy distributions when the medium is critical, independent of the fission neutron multiplicity distribution and domain heterogeneity. In contrast, the asymptotic decay is faster than exponential in subcritical media due to rapid chain extinction and in supercritical media due to the increasing probability of chain divergence. Here, a formal asymptotic analysis of the problem in lumped geometry with an arbitrary fission neutron multiplicity confirms the existence of power-law tails at critical.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

Characterization of W production during ICRF operations: experiments and modeling

For successfully heating plasma with waves in the ion cyclotron range of frequencies (ICRFs), mitigating impurity production is just as crucial as maximizing power coupling, especially in high-Z environments. ICRF can effectively deposit energy on ions, modify turbulence-driven transport, and enhance fusion reaction efficiency, but only when its power coupling has minimal impact on impurity production. To do so, one must rely on a toroidal array of at least three active elements excited with appropriate phasing and power ratio to reduce the currents induced on the antenna frame below levels critical for physical sputtering. In contrast to classic two-strap antennas, which are optimized for dipole phasing with equal power on both straps, three-strap antennas in ASDEX Upgrade (AUG)—but also four-strap antennas in JET, Alcator C-Mod, SPARC and ITER—offer the possibility to act also on the power ratio between the central and outer straps. With optimal settings, impurity production can be reduced substantially, making the ICRF compatible with the high-Z wall. This paper explores the characteristics of the AUG three-strap antennas in terms of impurity production, as well as the key role of plasma composition in this process. Numerical simulations were performed using SSWICH and Petra-M (finite element codes) to quantify impurity production and compare with experimental results. Energies of ions falling on antenna limiters (measured with probes) are well predicted by both codes. These tools are then used to further describe the source of the impurity, namely the gross erosion of tungsten from an ICRF antenna, for different plasma mixtures. Results are also compared to spectroscopy data. Ultimately, we show that deleterious effects of the ICRF on plasma surface interactions will be weaker in plasmas containing larger fractions of highly ionized heavier low-Z impurity, which is typically relevant for experiments relying on impurity seeding.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Planar multifrequency mid-IR microwave-pumped lasers

The characteristics of planar repetitively pulsed diffusion-cooled HF, DF, HF – DF, Xe, and HF – DF – Xe(Kr) lasers pumped by a microwave discharge (2.45 GHz) are studied depending on the pump pulse duration (10 – 40 μs) and repletion rate (50 – 400 Hz), as well as on the composition and pressure of the working gas mixture (30 – 200 Torr) at low (to 0.6 L s{sup −1}) gas flow rates. It is demonstrated for the first time that a HF – DF – Xe gas-discharge laser may simultaneously operate as a HF – DF chemical molecular laser and a recombination laser based on xenon atom transitions and generate broadband (octave) radiation in the range 2.0 – 4.2 μm with an average output power of 43 mW and an efficiency of 0.9 %. With substitution of xenon for krypton, lasing in a HF – DF – Kr laser is obtained at wavelengths of 2.52 – 4.15 μm. Lasing in a HF – DF laser was achieved simultaneously in two spectral regions (2.7 – 2.9 and 3.6 – 4.2 μm) with an output power of ∼50 mW. It is found that a decrease in the pump pulse duration with a simultaneous increase in the pulse repletion rate for retaining the average energy deposition leads to an increase in the average output power and efficiency of the laser. At low pulse repetition rates (50 – 100 Hz) and a low gas mixture flow rate, helium buffer gas can be effectively substituted for neon. Operation of the Xe laser was achieved in the spectral range 2.03 – 3.65 μm with an average output power of 580 Mw at a pump pulse duration of 20 μs, a pulse repetition rate to 10 kHz, and a maximum efficiency of 55 %. The obtained experimental results demonstrate the possibility of creating broadband HF – DF – Xe lasers emitting in the frequency range 2 – 4 μm with a desired ratio of intensities in different spectral ranges. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2026

Rapid RASER MRI

Conventional Magnetic Resonance Imaging (MRI) relies on high-power Radio-Frequency (RF) pulses to excite nuclear spins and in turn generate NMR signals. These pulses require large high-power RF-amplifiers and cause heat deposition in the tissue, which must be minimized for safety, presenting a growing problem when moving toward ever-higher field MRI. An alternative to RF-pulse excitation is self-excitation of nuclear spins using Radiofrequency Amplification by Stimulated Emission of Radiation (RASER), where the nuclear spins undergo spontaneous transition, without RF excitation, from an over-populated state to a ground state. Here, the feasibility of recording rapid proton RASER MRI images of pyrazine at low concentration (120 mM) with large matrix (128x128 pixels) in as little as 78 ms is demonstrated at 500 MHz (11.7 T). We also recorded a time-series of images using a single bolus hyperpolarized pyrazine highlighting the feasibility of dynamic tracking. Here, the demonstrated approach allows recording MRI scans without transmit-receive electronics of the MRI scanner, which is highly desirable for portable MRI as well as the emerging field of hyperpolarized MRI using, e.g., HP protons, 129 Xe gas or HP 13 C labeled biomolecules as molecular tracers and imaging agents.

MRI↗

DOE OSTI2021

Transformational challenge reactor analysis to inform preconceptual core design decisions: Sensitivity study of transient analysis in a hydride-moderated microreactor

The Transformational Challenge Reactor (TCR) program aims to demonstrate a revolutionary design approach enabled by advanced manufacturing and data analytics in the design of nuclear reactors. This article discusses scoping analyses of preconceptual designs to inform TCR design decisions and the evaluation of sensitivities and uncertainties on postulated transient scenarios. The applicability of the systems codes TRACE and RELAP5-3D to TCR transient analysis are examined, and RELAP5-3D models are used to examine the transient response of two candidate core designs at multiple power levels. Then, the uncertainty quantification code RAVEN is used to quantify the effect of several design parameters on reactivity-initiated accident (RIA) progression at hot zero power (HZP) and hot full power (HFP) as well as to assess the impact of uncertainties in transient parameters for the pressurized loss of forced cooling (PLOFC).When results were compared, TRACE and RELAP5-3D showed good agreement in their ability to predict system behavior, but RELAP5-3D calculations were closer to analytical predictions for the RIA. Furthermore, models for a PLOFC accident in two designs (a UO2 and TRISO core) at multiple power levels showed greater temperature margins for the TRISO core at all power levels. Using this information, along with other scoping analyses and constraints, the TCR design team selected a power level of 3 MWth and a TRISO-based core design. For this design RAVEN was applied to vary RIA parameters in RELAP5-3D models at HZP and HFP to understand the effect on figures of merit such as peak power, fuel and coolant temperature, and energy deposition. This sensitivity study found that the inserted reactivity worth was the most important parameter controlling all figures of merit, but for insertion up to 1.5$ no failure of TCR fuel is anticipated. For constant reactivity insertions, the magnitude of the fuel temperature coefficient was found to have the greatest effect on all figures of merit under most circumstances. These results not only demonstrate the anticipated robust safety of the proposed TCR fuel form but also provide a reference for future metal-hydride moderated systems to understand RIA behavior. In the PLOFC, the impact of heat transfer enhancement due to wavy flow channel effects dominated the variance in peak temperatures, and variations in heat exchanger elevation provided the greatest control on natural circulation flow rate. Additionally, no fuel particle failure is anticipated in the PLOFC.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2020

Features of explosion of thin aluminum foils on an 8 kA, 350 ns pulse generator

This paper presents the results of a study of the explosion of Al foils with a thickness of 4 μm on an 8 kA, 350 ns pulsed-power generator. The features of the energy deposition process in the explosion of foils in comparison with wires of similar mass and cross section, as well as with thin wires, are studied. In the experiments presented here, the dependence of the energy deposition in the foil on its initial structure was found. In conclusion, two types of exploded foil structure were recorded using point-projection radiography

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗