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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Plasmon-enhanced ultralow-threshold solid-state triplet fusion upconversion

Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold I th by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve I th values as low as 3.4 mW cm −2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. As a result, this scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Comparative performance of HgCdTe photodiodes for heterodyne application

The use of photodiodes as optical photomixers in laser heterodyne spectroscopy systems is discussed. The quantum efficiency of the photodiodes is reported with the emphasis on its effect on the system's signal to noise ratio. The measurement techniques used to determine photodiode dc and heterodyne quantum efficiencies are described. The theory behind the measurements as well as actual measurements data for two HgCdTe photodiodes are presented.

Kowitz, H. R.↗
DOE OSTI2026

Measurement of the QE Map

113 MHz SRF gun utilized CsK 2 Sb and Na 2 KSb cathodes, which were irradiated with a pulsed green laser with a wavelength of 0.53 microns. The drive laser generated 78 kHz pulses with an acousto-optic modulator selecting the desired number of pulses reaching the cathode. The operator can select the aperture size, defining the laser spot diameter on the cathode, and the power level, which is controlled by a rotating polarizer. The laser power reaching the cathode can be measured with a meter based on a photodiode. The quantum efficiency (QE) of a photocathode serves as a primary indicator of its state. Small QE renders the cathode unusable when the desired bunch charge cannot be achieved. Strong variations in the quantum efficiency on the cathode surface might lead to the growth of the beam emittance due to the space charge effects. We have created a routine to measure the distribution of the QE on the cathode. The operator selects the aperture size, the central spot location, and the scan ranges for both planes. The scan starts from the central spots and proceeds along a spiral-like trajectory, making N rounds. The number of rounds can be chosen, and the total number of measured points is (2N+1) 2 . The laser spot movement is shown in Fig. 1.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Heralded Generation of Correlated Photon Pairs from CdS/CdSe/CdS Quantum Shells

Quantum information processing demands efficient quantum light sources (QLS) capable of producing high-fidelity single photons or entangled photon pairs. Single epitaxial quantum dots (QDs) have long been proven to be efficient sources of deterministic single photons; however, their production via molecular-beam epitaxy presents scalability challenges. Conversely, colloidal semiconductor QDs offer scalable solution processing and tunable photoluminescence, but suffer from broader linewidths and unstable emissions. This leads to spectrally inseparable emission from exciton (X) and biexciton (XX) states, complicating the production of single photons and triggered photon pairs. Here, in this work, we demonstrate that colloidal semiconductor quantum shells (QSs) achieve significant spectral separation (∼75–80 meV) and long temporal stability of X and XX emissive states, enabling the observation of exciton-biexciton bunching in colloidal QDs. Our low-temperature single-particle measurements show cascaded XX-X emission of single photon pairs for over 200 s, with minimal overlap between X and XX features. The X-XX distinguishability allows for an in-depth theoretical characterization of cross-correlation strength, placing it in perspective with photon pairs of epitaxial counterparts. These findings highlight a strong potential of semiconductor quantum shells for applications in quantum information processing.

biexciton↗
NASA NTRS1989

Solid state photomultiplier for astronomy, phase 2

Epitaxial layers with varying donor concentration profiles were grown on silicon substrate wafers using chemical vapor deposition (CVD) techniques, and solid state photomultiplier (SSPM) devices were fabricated from the wafers. Representative detectors were tested in a low background photon flux, low temperature environment to determine the device characteristics for comparison to NASA goals for astronomical applications. The SSPM temperatures varied between 6 and 11 K with background fluxes in the range from less than 5 x 10 to the 6th power to 10 to the 13th power photons/square cm per second at wavelengths of 3.2 and 20 cm. Measured parameters included quantum efficiency, dark count rate and bias current. Temperature for optimal performance is 10 K, the highest ever obtained for SSPMs. The devices exhibit a combination of the lowest dark current and highest quantum efficiency yet achieved. Experimental data were reduced, analyzed and used to generate recommendations for future studies. The background and present status of the microscopic theory of SSPM operation were reviewed and summarized. Present emphasis is on modeling of the avalanche process which is the basis for SSPM operation. Approaches to the solution of the Boltzmann transport equation are described and the treatment of electron scattering mechanisms is presented. The microscopic single-electron transport theory is ready to be implemented for large-scale computations.

Besser, P. J.↗
DOE OSTI2025

Evaluation of the absolute single-photon detection efficiency of HRPPD

Pixelated High Rate Picosecond Photon Detectors (HRPPDs) by Incom Inc. are promising photosensors for use in Ring Imaging CHerenkov (RICH) detectors, where a high gain, sub-mm position resolution and sub-100ps timing resolution are required in a single photon mode. Quantum Efficiency (QE) has been measured for the first batch of EIC HRPPDs both by Incom and EIC research groups at Jefferson Lab and Brookhaven Lab, with peak values at ∼365 nm typically exceeding 30%. Furthermore, in this study, we present a first direct measurement of Photon Detection Efficiency being equal to (17.1 ± 0.1 [stat] ± 0.3 [sys])% at 398.6 nm, for a pixel near the center of HRPPD, in a photoelectron pulse counting mode using a picosecond diode laser. HRPPD QE at the same spot and at the same wavelength was evaluated to be (24.4 ± 0.1 [stat] ± 0.3 [sys])%, leading to a Collection Efficiency estimate of (70.3 ± 1.6)%, which is consistent with the expectations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1981

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Viehmann, W.↗
NASA NTRS2006

In Orbit Performance of Si Avalanche Photodiode Single Photon Counting Modules in the Geoscience Laser Altimeter System on ICESat

Si avalanche photodiode (APD) single photon counting modules (SPCMs) are used in the Geoscience Laser Altimeter System (GLAS) on Ice, Cloud, anti land Elevation Satellite (ICESat), currently in orbit measuring Earth surface elevation and atmosphere backscattering. These SPCMs are used to measure cloud and aerosol backscatterings to the GLAS laser light at 532-nm wavelength with 60-70% quantum efficiencies and up to 15 millions/s maximum count rates. The performance of the SPCMs has been closely monitored since ICESat launch on January 12, 2003. There has been no measurable change in the quantum efficiency, as indicated by the average photon count rates in response to the background light from the sunlit earth. The linearity and the afterpulsing seen from the cloud and surface backscatterings profiles have been the same as those during ground testing. The detector dark count rates monitored while the spacecraft was in the dark side of the globe have increased almost linearly at about 60 counts/s per day due to space radiation damage. The radiation damage appeared to be independent of the device temperature and power states. There was also an abrupt increase in radiation damage during the solar storm in 28-30 October 2003. The observed radiation damage is a factor of two to three lower than the expected and sufficiently low to provide useful atmosphere backscattering measurements through the end of the ICESat mission. To date, these SPCMs have been in orbit for more than three years. The accumulated operating time to date has reached 290 days (7000 hours). These SPCMs have provided unprecedented receiver sensitivity and dynamic range in ICESat atmosphere backscattering measurements.

Sun, X.↗
NASA NTRS1982

Photon bunching and the photon-noise-limited performance of infrared detectors

The photon-noise-limited performance of a radiation detector exposed to a thermal background of temperature T is analyzed by calculating the resulting specific detectivity. Both ideal photon detectors of arbitrary quantum efficiency eta and ideal thermal detectors of arbitrary emissivity eta are considered; and the effects of both shot noise and excess noise are taken into account. The relative contributions of these two sources depend on the quantum efficiency or emissivity of the system. For frequencies nu such that hnu/kT is much less than eta, excess noise can make an appreciable contribution to the total system noise. For the case of the detection of the narrow-band radiation, the specific detectivity is independent of eta in the limit hnu/kT is much less than eta.

Boyd, R. W.↗
NASA NTRS1993

Stable vacuum UV CCD detectors designed for space flight experiments

Thinned, backside-illuminated, p-channel CCD images are under development which can exploit the surface potential in VUV applications, yielding enhanced quantum efficiency to wavelengths as short as 1100 A. The current goal is production of large-format, 5-micron pixel imagers for spectrographic and imaging VUV spaceflight experiments. Model predictions of the effect of device design on quantum efficiency, well capacity, and crosstalk are presented for such 5-micron-approaching pixel sizes.

Socker, Dennis G.↗
NASA NTRS2003

Metal Side Reflectors for Trapping Light in QWIPs

Focal-plane arrays of quantum-well infrared photodetectors (QWIPs) equipped with both light-coupling diffraction gratings and metal side reflectors have been proposed, and prototypes are expected to be fabricated soon. The purpose served by the metal side reflectors is to increase quantum efficiency by helping to trap light in the photosensitive material of each pixel. The reasons for using diffraction gratings were discussed in several prior NASA Tech Briefs articles. To recapitulate: In an array of QWIPs, the quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. Diffraction gratings scatter normally or nearly normally incident light into directions more nearly parallel to the focal plane, so that a significant portion of the light attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. Unfortunately, light scattered in directions parallel or nearly parallel to the focal plane can escape sideways from the QWIP of a given pixel, as illustrated in Figure 1. The escaped light has made only a single pass through the interior photosensitive volume of the QWIP. The quantum efficiency of the QWIP would be increased by trapping light so that it makes multiple passes through the photosensitive volume. As shown in Figure 2, the sides of the QWIP of each pixel would be coated with gold to reflect escaping light back into the interior.

Gunapala, Sarath↗
NASA NTRS2009

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

imagers↗
NASA NTRS1979

Thin-film scintillators for extended ultraviolet /UV/ response silicon detectors

The preparation and radiometric properties of silicon detectors coated with fluorescent thin films are described. The films are deposited from solutions of clear plastics, such as acrylic resins, polyvinyl toluene or polystyrene, and of organic laser dyes in a common solvent. They are optically clear, mechanically and chemically stable, yet easily applied and removed. Multiple doped films of a few microns thickness exhibit broad-band absorption from less than 250 nm to about 450 nm and narrow band emissions with peaks ranging from 380 nm to 600 nm. Internal quantum efficiencies are close to 100 percent and fluorescence decay times are in the nanosecond range. When deposited on optically denser media, a large fraction of the fluorescent emission is trapped in the substrate. Silicon photodiodes coated with multiple doped films exhibit high external quantum efficiencies and virtually flat photon response in the near UV.

Viehmann, W.↗
NASA NTRS1996

Analysis of Measurements for Solid State Lidar Development

A Detector Characterization Facility (DCF), capable of measuring 2-micron detection devices and evaluating heterodyne receivers, was developed at the Marshall Space Flight Center. The DCF is capable of providing all the necessary detection parameters for design, development, and calibration of coherent and incoherent solid state laser radar (lidar) systems. The coherent lidars in particular require an accurate knowledge of detector heterodyne quantum efficient, nonlinearity properties, and voltage-current relationship as a function of applied optical power. At present, no detector manufacturer provides these qualities or adequately characterizes their detectors for heterodyne detection operation. In addition, the detector characterization facility measures the detectors DC and AC quantum efficiencies noise equivalent power and frequency response up to several GHz. The DCF is also capable of evaluating various heterodyne detection schemes such as balanced detectors and fiber optic interferometers. The design and analyses of measurements for the DCF were preformed over the previous year and a detailed description of its design and capabilities was provided in the NASA report NAS8-38609/DO77. It should also be noted that the DCF design was further improved to allow for the characterization of diffractive andholographical optical elements and other critical components of coherent lidar systems.

Amzajerdian, Farzin↗
NASA NTRS1986

The CCD flash gate

Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of a less than 4-micron thick layer of metal with high work function to the backside of the CCD can yield 100-percent internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (the 'CCD flash gate'), and a considerable amount of experimental data, are discussed. Specific recommendations for use of the flash gate in present and future CCDs are also reviewed.

Janesick, James↗
NASA NTRS1990

Theoretical model for a background noise limited laser-excited optical filter for doubled Nd lasers

A simple theoretical model for the calculation of the dependence of filter quantum efficiency versus laser pump power in an atomic Rb vapor laser-excited optical filter is reported. Calculations for Rb filter transitions that can be used to detect the practical and important frequency-doubled Nd lasers are presented. The results of these calculations show the filter's quantum efficiency versus the laser pump power. The required laser pump powers required range from 2.4 to 60 mW/sq cm of filter aperture.

Shay, Thomas M.↗
NASA NTRS2006

InGaAsSb/AlGaAsSb Heterojunction Phototransistors for Infrared Applications

High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10(exp 9) cmHz(exp 1/2)/W at 2 microns was obtained at 100 C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 C allows to increase the bias to 3V and enhance the detectivity to 8.7x10(exp 10) cmHz(exp 1/2)/W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 s at 2V and 100 C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10(exp -7) W/sq cm and 31.6 mW/sq cm.

Refaat, Tamer F.↗
NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗