Search NASA⌕ Search

SEARCH · Search NASA

Results for “quantum efficiency”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9

Relative fluorescent efficiency of sodium salicylate between 90 and 800 eV

The relative fluorescent quantum efficiency of sodium salicylate was measured between 90 and 800 eV (138-15 A) by the use of synchrotron radiation. A general increase in efficiency was observed in this spectral range except for abrupt decreases in efficiency at the carbon and oxygen K-edges. Beyond the oxygen K-edge (532 eV) the efficiency increased linearly with the incident photon energy to the limit of the present observations.

Angel, G. C.↗

Statistical Error Analysis on White-Light Filter Ratio Experiments to Measure Electron Parameters

The Filter ratio technique to remotely measure electron temperature and speed using four color filters in visible light and a polarization camera was described in detail in four articles by Reginald et al., Solar physics, (2018, 2019a, 2019b, 2020). In these four articles we quantified the systematic error associated with using models of symmetric corona to interpret results from asymmetric corona. We also showed the criteria applied to select the bandwidths of filters, and the pros and cons of replacing the traditional linear polarizer with a polarization camera to measure pB. What started in 1990s as ground experiments conducted during total solar eclipses that lasted for a few minutes lead to a balloon borne experiment lasting eight hours in 2019 and will blossom into a space experiment on the International Space Station in 2023. Due to constraints on the bandwidths of the four filters, a successful mission requires quantification of the statistical error using Monte Carlo simulation to generate two feasibility profiles, which are unique to the design parameters of the coronagraph, to comprehend the feasibility to measure temperature and speed within the desired temporal and spatial resolutions. For the statistical error analysis, we use modeled K and F corona profiles, representative theoretical diffraction, scattering, and vignetting profiles, assumed efficiencies for lenses, mirrors, and polarizers, assumed detector properties on quantum efficiency, full well depth, dark noise, and read noise, and assumed instrument properties on aperture diameter, solid angle, and pixel resolution. We hope future white-light coronagraphs will exhibit capabilities to measure electron density, temperature, and speed.

Nelson Reginald↗

Chirped-Superlattice, Blocked-Intersubband QWIP

An Al(x)Ga(1-x)As/GaAs quantum-well infrared photodetector (QWIP) of the blocked-intersubband-detector (BID) type, now undergoing development, features a chirped (that is, aperiodic) superlattice. The purpose of the chirped superlattice is to increase the quantum efficiency of the device. A somewhat lengthy background discussion is necessary to give meaning to a brief description of the present developmental QWIP. A BID QWIP was described in "MQW Based Block Intersubband Detector for Low-Background Operation" (NPO-21073), NASA Tech Briefs Vol. 25, No. 7 (July 2001), page 46. To recapitulate: The BID design was conceived in response to the deleterious effects of operation of a QWIP at low temperature under low background radiation. These effects can be summarized as a buildup of space charge and an associated high impedance and diminution of responsivity with increasing modulation frequency. The BID design, which reduces these deleterious effects, calls for a heavily doped multiple-quantum-well (MQW) emitter section with barriers that are thinner than in prior MQW devices. The thinning of the barriers results in a large overlap of sublevel wave functions, thereby creating a miniband. Because of sequential resonant quantum-mechanical tunneling of electrons from the negative ohmic contact to and between wells, any space charge is quickly neutralized. At the same time, what would otherwise be a large component of dark current attributable to tunneling current through the whole device is suppressed by placing a relatively thick, undoped, impurity-free AlxGa1 x As blocking barrier layer between the MQW emitter section and the positive ohmic contact. [This layer is similar to the thick, undoped Al(x)Ga(1-x)As layers used in photodetectors of the blocked-impurity-band (BIB) type.] Notwithstanding the aforementioned advantage afforded by the BID design, the responsivity of a BID QWIP is very low because of low collection efficiency, which, in turn, is a result of low electrostatic- potential drop across the superlattice emitter. Because the emitter must be electrically conductive to prevent the buildup of space charge in depleted quantum wells, most of the externally applied bias voltage drop occurs across the blocking-barrier layer. This completes the background discussion. In the developmental QWIP, the periodic superlattice of the prior BID design is to be replaced with the chirped superlattice, which is expected to provide a built-in electric field. As a result, the efficiency of collection of photoexcited charge carriers (and, hence, the net quantum efficiency and thus responsivity) should increase significantly.

Gunapala, Sarath↗

The Quantasyn, an improved quantum detector

Quantasyn provides absolute measurement of radiation flux in the range 1000 A to 4500 A and into the vacuum ultraviolet. This radiation detector cimbines the high quantum efficiency and inherent linearity of the silicon solar cell with the constant quantum response of the fluorescent organic compound liumogen.

Gorstein, M.↗

Quantum Machine Learning

Quantum computing promises an unprecedented ability to solve intractable problems by harnessing quantum mechanical effects such as tunneling, superposition, and entanglement. The Quantum Artificial Intelligence Laboratory (QuAIL) at NASA Ames Research Center is the space agency's primary facility for conducting research and development in quantum information sciences. QuAIL conducts fundamental research in quantum physics but also explores how best to exploit and apply this disruptive technology to enable NASA missions in aeronautics, Earth and space sciences, and space exploration. At the same time, machine learning has become a major focus in computer science and captured the imagination of the public as a panacea to myriad big data problems. In this talk, we will discuss how classical machine learning can take advantage of quantum computing to significantly improve its effectiveness. Although we illustrate this concept on a quantum annealer, other quantum platforms could be used as well. If explored fully and implemented efficiently, quantum machine learning could greatly accelerate a wide range of tasks leading to new technologies and discoveries that will significantly change the way we solve real-world problems.

Biswas, Rupak↗

New and Better Near-Infrared Detectors for JWST Near Infrared Spectrograph

ESA and NASA recently selected two 5 m cutoff Teledyne H2RG sensor chip assemblies (SCA) for flight on the James Webb Space Telescope (JWST) Near Infrared Spectrograph (NIRSpec). These HgCdTe SCAs incorporate Teledynes improved barrier layer design that eliminates the degradation that affected earlier JWST H2RGs(Rauscher et al. 2012a). The better indium barrier, together with other design changes, has improved the performance and reliability of JWSTs SCAs. In this article, we describe the measured performance characteristics that most directly affect scientific observations including read noise, total noise, dark current, quantum efficiency (QE), and image persistence. As part of measuring QE, we measured the quantum yield as a function of photon energy,, and found that it exceeds unity for photon energies E (2.65.2) Eg, where Eg is the HgCdTe bandgap energy. This corresponds to. 2 m for NIRSpecs 5 m cutoff HgCdTe. Our measurements agree well with a previous measurement by McCullough et al. (2008) for. 1.3. For 1.3, we find a slower increase in with photon energy than McCullough et al. did. However, and as McCullough et al. note, their two state model of the yield process is not valid for large 1.

New and Better↗

2 Micrometers InAsSb Quantum-dot Lasers

InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

quantum dot↗

High resolution imaging X-ray detector for astronomical measurements

The article describes the X-ray detector which will provide second-of-arc images for the HEAO-B X-ray observatory. The instrument uses microchannel plates as a photocathode surface and imaging photoelectron multiplier, and a crossed wire grid as a two-dimensional position-sensitive detector. Position determination is accomplished by electronic interpolation between the coarse grid wires. The detector provides the arrival time and position of each event which occurs within its field of view. Measurements of the spatial resolution (15 microns), temporal resolution (7.8 microsec), image distortion (less than 10 microns), uniformity of efficiency (less than plus or minus 10%), dark counting rate (0.2 cts/sq cm/s), and quantum efficiency (10% at 1.54 keV) of this detector are described. A summary of the procedure which was found useful during the initial turn-on of microchannel plates is given.

Henry, J. P.↗

Quantum Molecular Dynamics Simulations of Nanotube Tip Assisted Reactions

In this report we detail the development and application of an efficient quantum molecular dynamics computational algorithm and its application to the nanotube-tip assisted reactions on silicon and diamond surfaces. The calculations shed interesting insights into the microscopic picture of tip surface interactions.

Menon, Madhu↗

Quantum Computation: Entangling with the Future

Commercial applications of quantum computation have become viable due to the rapid progress of the field in the recent years. Efficient quantum algorithms are discovered to cope with the most challenging real-world problems that are too hard for classical computers. Manufactured quantum hardware has reached unprecedented precision and controllability, enabling fault-tolerant quantum computation. Here, I give a brief introduction on what principles in quantum mechanics promise its unparalleled computational power. I will discuss several important quantum algorithms that achieve exponential or polynomial speedup over any classical algorithm. Building a quantum computer is a daunting task, and I will talk about the criteria and various implementations of quantum computers. I conclude the talk with near-future commercial applications of a quantum computer.

Jiang, Zhang↗

Recent advances in the ITO/InP solar cell

It was demonstrated that Indium Tin Oxide (ITO)/InP solar cells can now be made on as-received p(-) bulk substrates which are of nearly equal quality to those which could previously only be made on epitaxially grown p(-) InP base layers. Although this advancement is due in part to both increases in substrate quality and a better understanding of back contact formation, it appears that the passivation/compensation effects resulting from having H2 in the sputtering gas tends to reduce significantly the performance differences previously observed between these two substrates. It is shown that since high efficiency ITO/InP cells can be made from as-received substrates, and since the type conversion process is not highly spatially dependent, large area ITO/InP cells (4 sq cm) with efficiencies approaching 17 percent (Global) can be made. Furthermore, the measured open circuit voltages (V sub OC) and quantum efficiencies (QEs) from these large cells suggest that, when they are processed using optimum grid designs, the efficiencies will be nearly equal to that of the smaller cells thus far produced. It has been shown, through comparative experiments involving ITO/InP and IO/InP cells, that Sn may not be the major cause of type conversion of the InP surface and thus further implies that the ITO may not be an essential element in this type of device. Specifically, very efficient photovoltaic solar cells were made by sputtering (Sn free) In2O3 showing that type conversion and subsequent junction formation will occur even in the absence of the sputtered SN species. The result suggests that sputter damage may indeed be the important mechanism(s) of type conversion. Finally, an initial study of the stability of the ITO/InP cell done over the course of about one year has indicated that the J(sub SC) (short circuit current) and the fill factor (FF) are measurably stable within experimental certainty.

Gessert, T. A.↗

Lateral modes of broad area semiconductor lasers - Theory and experiment

Calculations of the lateral modes of an ideal broad area laser, including the nonlinear interaction between the carriers and the optical field, are made. The results include periodically modulated near fields and single- and double-lobed far fields similar to those previously measured. The unsaturable losses are higher and quantum efficiencies are lower than those determined from plane-wave approximations. Broad area InGaAs-GaAlAs-GaAs quantum-well lasers were fabricated and measured and found to closely agree with the theory in near, far, and spectrally resolved near fields. An occultation experiment on the far field confirms previously predicted unstable resonatorlike modes with V-shaped fronts.

Lang, Robert J.↗

Test results on intensified charge coupled devices

CCD imaging arrays were evaluated for a photon counting astronomical sensor. Results show noise corresponding to less than 100 rms electrons and gains of approximately 1000 at 10kV accelerating voltage (greater than 5000 at 25kV). Measured charge transfer efficiencies are in excess of 0.9999, signal saturation levels are as high as 990000 electrons per pixel and peak quantum efficiencies are greater than 75%. Successful proximity focussed intensified charge coupled devices (ICCD) have been fabricated, although problems still exist with contamination and possible structural failures in the CCD's during tube manufacture.

Williams, J. T.↗

High-Efficiency Multi-Junction Space Solar Development Utilizing Lattice Grading

Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction solar cell comprised of a 1.62 eV InGaP top cell and a 1.1 eV InGaAs bottom cell grown on buffered GaAs is reported. The performance of stand-alone 1.62 eV InGaP and 1.1 eV InGaAs cells is compared to that of the dual junction cell. Projected AM0 efficiencies of 15.7% and 16.5% are expected for the 1.62 eV InGaP and 1.1 eV InGaAs cells grown on buffered GaAs. The dual junction cell has a projected one-sun AM0 conversion efficiency of 17%. The projected efficiencies are based upon the application of an optimized anti-reflective coating (ARC) to the as-grown cells. Quantum efficiency (QE) data obtained from the dual junction cell indicate that is is bottom cell current limited with the top cell generating 50% more current than the bottom cell. A comparison of the QE data for the stand-alone 1.1 eV InGaAs cell to that of the 1.1 eV InGaAs bottom cell in the tandem configuration indicates a degradation of the bottom cell conversion efficiency in the tandem configuration. The origin of this performance degradation is at present unknown. If the present limitation can be overcome, then a one-sun AM0 efficiency of 26% is achievable with the 1.62 eV/1.1 eV dual junction cell grown lattice-mismatched to GaAs.

Stan, Mark A.↗

Time delay and integration array (TDI) using charge transfer device technology. Phase 2, volume 1: Technical

The 20x9 TDI array was developed to meet the LANDSAT Thematic Mapper Requirements. This array is based upon a self-aligned, transparent gate, buried channel process. The process features: (1) buried channel, four phase, overlapping gate CCD's for high transfer efficiency without fat zero; (2) self-aligned transistors to minimize clock feedthrough and parasitic capacitance; and (3) transparent tin oxide electrode for high quantum efficiency with front surface irradiation. The requirements placed on the array and the performance achieved are summarized. This data is the result of flat field measurements only, no imaging or dynamic target measurements were made during this program. Measurements were performed with two different test stands. The bench test equipment fabricated for this program operated at the 8 micro sec line time and employed simple sampling of the gated MOSFET output video signal. The second stand employed Correlated Doubled Sampling (CDS) and operated at 79.2 micro sec line time.

Source record↗