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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Floquet-engineered fast SNAP gates in weakly coupled circuit-QED systems

Superconducting cavities with high quality factors, coupled to a fixed-frequency transmon, provide a state-of-the-art platform for quantum information storage and manipulation. The commonly used selective number-dependent arbitrary phase ( SNAP ) gate faces significant challenges in ultrahigh-coherence cavities, where the weak dispersive shifts necessary for preserving high coherence typically result in prolonged gate times. Here, in this work, we propose a protocol to achieve high-fidelity SNAP gates that are orders of magnitude faster than the standard implementation, surpassing the speed limit set by the bare dispersive shift. We achieve this enhancement by dynamically amplifying the dispersive coupling via sideband interactions, followed by quantum optimal control on the Floquet-engineered system. We also present a unified perturbation theory that explains both the gate acceleration and the associated benign drive-induced decoherence, corroborated by Floquet-Markov simulations. These results pave the way for the experimental realization of high-fidelity, selective control of weakly coupled, high-coherence cavities, and expanding the scope of optimal control techniques to a broader class of Floquet quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Quantum utility-scale error mitigation for quantum quench dynamics in Heisenberg spin chains

Here, we implement a quantum error mitigation method termed self-mitigation, which is comparable to zero-noise extrapolation, at large scales to achieve quantum utility on near-term, noisy quantum computers. We investigate the effectiveness of several quantum error mitigation strategies, including self-mitigation, by simulating quantum quench dynamics for Heisenberg spin chains with system sizes up to 104 qubits using IBM quantum processors. In particular, we discuss the limitations of zero-noise extrapolation and the advantages offered by self-mitigation at large scales. The self-mitigation method demonstrates stable accuracy with large systems of 104 qubits comprising more than 3,000 CNOT gates. Also, we combine the discussed quantum error mitigation methods with practical entanglement entropy measuring methods, and it shows a good agreement with the theoretical estimation. Our study illustrates the usefulness of near-term noisy quantum hardware in examining the quantum quench dynamics of many-body systems at large scales and lays the groundwork for surpassing classical simulations with quantum methods prior to the development of fault-tolerant quantum computers.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1991

Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions

A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses.

Janesick, James R.↗
DOE OSTI2024

Fully quantum algorithm for mesoscale fluid simulations with application to partial differential equations

Fluid flow simulations marshal our most powerful computational resources. In many cases, even this is not enough. Quantum computers provide an opportunity to speed up traditional algorithms for flow simulations. We show that lattice-based mesoscale numerical methods can be executed as efficient quantum algorithms due to their statistical features. This approach revises a quantum algorithm for lattice gas automata to reduce classical computations and state preparation at every time step. For this, the algorithm approximates the qubit relative phases and subtracts them at the end of each time step. Phases are evaluated using the iterative phase estimation algorithm and subtracted using single-qubit rotation phase gates. Further, this method optimizes the quantum resource required and makes it more appropriate for near-term quantum hardware. We also demonstrate how the checkerboard deficiency that the D1Q2 scheme presents can be resolved using the D1Q3 scheme. The algorithm is validated by simulating two canonical partial differential equations: the diffusion and Burgers' equations on different quantum simulators. We find good agreement between quantum simulations and classical solutions for the presented algorithm.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Qudit Gate Decomposition Dependence for Lattice Gauge Theories

In this work, we investigate the effect of decomposition basis on primitive qudit gates on superconducting radio-frequency cavity-based quantum computers with applications to lattice gauge theory. Three approaches are tested: SNAP & Displacement gates, ECD & single-qubit rotations $R(\theta,\phi)$, and optimal pulse control. For all three decompositions, implementing the necessary sequence of rotations concurrently rather then sequentially can reduce the primitive gate run time. The number of blocks required for the faster ECD &$R_p(\theta)$ is found to scale $\mathcal{O}(d^2)$, while slower SNAP & Displacement set scales at worst $\mathcal{O}(d)$. For qudits with $d<10$, the resulting gate times for the decompositions is similar, but strongly-dependent on experimental design choices. Optimal control can outperforms both decompositions for small $d$ by a factor of 2-12 at the cost of higher classical resources. Lastly, we find that SNAP & Displacement are slightly more robust to a simplified noise model.

Kürkçüoglu, Doga Murat↗
DOE OSTI2024

Group-theoretic error mitigation enabled by classical shadows and symmetries

Abstract Estimating expectation values is a key subroutine in quantum algorithms. Near-term implementations face two major challenges: a limited number of samples required to learn a large collection of observables, and the accumulation of errors in devices without quantum error correction. To address these challenges simultaneously, we develop a quantum error-mitigation strategy called symmetry-adjusted classical shadows , by adjusting classical-shadow tomography according to how symmetries are corrupted by device errors. As a concrete example, we highlight global U(1) symmetry, which manifests in fermions as particle number and in spins as total magnetization, and illustrate their group-theoretic unification with respective classical-shadow protocols. We establish rigorous sampling bounds under readout errors obeying minimal assumptions, and perform numerical experiments with a more comprehensive model of gate-level errors derived from existing quantum processors. Our results reveal symmetry-adjusted classical shadows as a low-cost strategy to mitigate errors from noisy quantum experiments in the ubiquitous presence of symmetry.

Zhao, Andrew (ORCID:0000000202990277)↗
DOE OSTI2024

Modular Quantum Processor with an All-to-All Reconfigurable Router

Superconducting qubits provide a promising approach to large-scale fault-tolerant quantum computing. However, qubit connectivity on a planar surface is typically restricted to only a few neighboring qubits. Achieving longer-range and more flexible connectivity, which is particularly appealing in light of recent developments in error-correcting codes, however, usually involves complex multilayer packaging and external cabling, which is resource intensive and can impose fidelity limitations. Here, we propose and realize a high-speed on-chip quantum processor that supports reconfigurable all-to-all coupling with a large on-off ratio. We implement the design in a four-node quantum processor, built with a modular design comprising a wiring substrate coupled to two separate qubit-bearing substrates, each including two single-qubit nodes. We use this device to demonstrate reconfigurable controlled-𝑍 gates across all qubit pairs, with a benchmarked average fidelity of 96.00% ± 0.08% and best fidelity of 97.14% ± 0.07%, limited mainly by dephasing in the qubits. We also generate multiqubit entanglement, distributed across the separate modules, demonstrating GHZ-3 and GHZ-4 states with fidelities of 88.15% ± 0.24% and 75.18% ± 0.11%, respectively. This approach promises efficient scaling to larger-scale quantum circuits and offers a pathway for implementing quantum algorithms and error-correction schemes that benefit from enhanced qubit connectivity.

Quantum circuits↗
NASA NTRSDate not supplied

Self-consistent Quantum Iteratively Sparsified Hamiltonian Algorithm (SQuISH)

Due to coherence time limitations, reducing the resources required to run quantum algorithms and simulate physical systems on a quantum computer is crucial. With regards to Hamiltonian simulation, a significant effort has focused on building efficient algorithms using various factorizations and truncations, typically derived from the Hamiltonian alone. We introduce a new paradigm for improving Hamiltonian simulation and reducing the cost of ground state problems based on ideas recently developed for classical chemistry simulations. The key idea is that one can find efficient ways to reduce resources needed by quantum algorithms by making use of two key pieces of information: the Hamiltonian operator and an approximate ground state wavefunction. We refer to our algorithm as the self-consistent quantum iteratively sparsified Hamiltonian (SQuISH). By performing our scheme iteratively, one can drive SQuISH to create an accurate wavefunction using a truncated, resource-efficient Hamiltonian. By utilizing this more compact Hamiltonian, our algorithm provides an approach to reduce the gate complexity of ground state calculations on quantum hardware. As proof of principle, we implement SQuISH using configuration interaction for small molecules and coupled cluster for larger systems. Through our combination of approaches, we demonstrate how it performs on a range of systems, the largest of which would require more than 200 qubits to run on quantum hardware.

Diana Chamaki↗
DOE OSTI2025

Localizing individual exciton on a quantum Hall antidot

Excitons are bond states of electron-hole pairs formed through Coulomb interaction. While excitonic phases have been widely studied in semiconductors and quantum Hall double-layers, prior works largely focus on bulk systems with large number of excitons, limiting their applications in quantum devices. Here, employing the approach of quantum Hall antidot with two spatially separated edge channels, we demonstrate a type of quantum Hall quasiparticle exciton which represents a quantum-coherent bound state of an electron and a hole situated on their corresponding edges coupled through intralayer tunneling and Coulomb interaction. This approach allows localization and electrical tuning of individual quantum Hall excitons. Quantum-coherent dynamics of exciton are observed in the gate-dependence of antidot conductance peaks near the electron-hole resonance, which signifies a quantum superposition of vacuum- and electron-hole pairing states. Modeling the electron-hole pair as a coupled two-level system, semi-quantitative understanding of experimental observations is achieved. This work opens avenues for creating quantum systems of multiple quantum Hall quasiparticles.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Extremely large current double interface GaAs/In(0.15)Ga(0.85)As/Al(0.15)Ga(0.85)As pseudomorphic modulation-doped field-effect transistors (MODFET's) grown by molecular beam epitaxy were achieved. The 1-micron gate devices studied have peak current levels (430 mA/mm at 300 K and 483mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET's. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at 77 K. Excellent microwave performance is also obtained with a maximum frequency of oscillation (f-max) of 37 GHz and a current gain cut-off frequency of as high as 23 GHz at 300 K. An output power level of 14 dBm (1 dB gain compression) was obtained at 6 GHz for a 290-micron gate width. This double interface single quantum well MODFET may be of great importance in millimeter wave power amplifiers.

Henderson, T.↗
NASA NTRS1988

Producing CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
NASA NTRS1991

CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
DOE OSTI2025

Adaptive variational quantum dynamics simulations with compressed circuits and fewer measurements

The adaptive variational quantum dynamics simulation (AVQDS) method performs real-time evolution of quantum states using automatically generated parametrized quantum circuits that often contain substantially fewer gates than Trotter circuits. Here we report an improved version of the method, which we call AVQDS(T), by porting the tiling efficient trial circuits with rotations implemented simultaneously technique. The algorithm adaptively adds layers of disjoint unitary gates to the ansatz circuit so as to keep the McLachlan distance, a measure of the accuracy of the variational dynamics, below a fixed threshold. Here we perform benchmark noiseless AVQDS(T) simulations of quench dynamics in local spin models and compare with an alternative adaptive variational approach on quantum resource requirement. Quantum dynamical simulations implementing realistic noise channels are also reported. Finally, we propose a way to substantially alleviate the measurement overhead of AVQDS(T) while maintaining high accuracy by synergistically integrating quantum circuit calculations on quantum processing units with classical calculations using, e.g., tensor networks to evaluate the quantum geometric tensor. We showcase that this approach enables AVQDS(T) to deliver more accurate results than simulations using a fixed ansatz of comparable final depth for a significant time duration with fewer quantum resources.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗
NASA NTRS1986

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

Liu, Shih-Ming J.↗
DOE OSTI2024

Quantum computation of stopping power for inertial fusion target design

Stopping power is the rate at which a material absorbs the kinetic energy of a charged particle passing through it—one of many properties needed over a wide range of thermodynamic conditions in modeling inertial fusion implosions. First-principles stopping calculations are classically challenging because they involve the dynamics of large electronic systems far from equilibrium, with accuracies that are particularly difficult to constrain and assess in the warm-dense conditions preceding ignition. Here, we describe a protocol for using a fault-tolerant quantum computer to calculate stopping power from a first-quantized representation of the electrons and projectile. Our approach builds upon the electronic structure block encodings of Su et al. [ PRX Quant. 2 , 040332 (2021)], adapting and optimizing those algorithms to estimate observables of interest from the non-Born–Oppenheimer dynamics of multiple particle species at finite temperature. We also work out the constant factors associated with an implementation of a high-order Trotter approach to simulating a grid representation of these systems. Ultimately, we report logical qubit requirements and leading-order Toffoli costs for computing the stopping power of various projectile/target combinations relevant to interpreting and designing inertial fusion experiments. We estimate that scientifically interesting and classically intractable stopping power calculations can be quantum simulated with roughly the same number of logical qubits and about one hundred times more Toffoli gates than is required for state-of-the-art quantum simulations of industrially relevant molecules such as FeMoco or P450.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Exploring transport-enabled gates with integrated optical addressing to demonstrate high fidelity control of trapped ion qubits in a scalable quantum computer

In recent years, experiments involving micofabricated surface ion traps have grown in complexity, and as this complexity grows, a common design has emerged in the form of quantum charge-coupled device architecture. This architecture, already utilized on multiple systems, supports multiple zones on a device for areas such as memory or computation. The shutting process between these zones is a process often seen to be minimized. An additional component to scalable surface trapped-ion experiments includes some form of integrated photonics, as free space lasers have difficulty scaling to many ions. Here, we discuss recent results in utilizing the shuttling process with integrated photonics to perform a specific type of gate, as well as demonstrating state preparation. Furthermore, we show that these gates can be utilized as a type of optical modulator as the Doppler shift that occurs during shuttling will make the light seen by shuttled ions different than that seen by stationary ions. Furthermore, we show that the shuttling operation can be utilized as an optical modulator, where the Doppler shift changes the frequency from that of a stationary ion.

42 ENGINEERING↗
DOE OSTI2025

Efficient state preparation for the Schwinger model with a theta term

We present a comparison of different quantum state preparation algorithms and their overall efficiency for the Schwinger model with a theta term. While adiabatic state preparation is proved to be effective, in practice it leads to large gate counts to prepare the ground state. The quantum approximate optimization algorithm (QAOA) provides excellent results while keeping the counts small by design, at the cost of an expensive classical minimization process. We introduce a “blocked” modification of the Schwinger Hamiltonian to be used in the QAOA that further decreases the length of the algorithms as the size of the problem is increased. The rodeo algorithm (RA) provides a powerful tool to efficiently prepare any eigenstate of the Hamiltonian, as long as its overlap with the initial guess is large enough. We obtain the best results when combining the blocked QAOA ansatz and the RA, as this provides an excellent initial state with a relatively short algorithm without the need to perform any classical steps for large problem sizes. Published by the American Physical Society 2025

Bazavov, Alexei (ORCID:0000000321411901)↗