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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe2

The quantum spin Hall insulator is characterized by a bandgap in the two-dimensional (2D) interior and helical 1D edge states 1 , 2 , 3 . Inducing superconductivity in the helical edge state results in a 1D topological superconductor, a highly sought-after state of matter at the core of many proposals for topological quantum computing 4 . In the present study, we report the coexistence of superconductivity and the quantum spin Hall edge state in a van der Waals heterostructure, by placing a monolayer of 1T'-WTe 2 , a quantum spin Hall insulator 1 , 2 , 3 , on a van der Waals superconductor, NbSe 2 . Using scanning tunnelling microscopy and spectroscopy (STM/STS), we demonstrate that the WTe 2 monolayer exhibits a proximity-induced superconducting gap due to the underlying superconductor and that the spectroscopic features of the quantum spin Hall edge state remain intact. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the quantum spin Hall edge state in WTe 2 , a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Measured Potential Profile in a Quantum Anomalous Hall System Suggests Bulk-Dominated Current Flow

Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well-described by solution of Laplace's equation, assuming spatially-uniform conductivity, suggesting non-equilibrium current flows through the two-dimensional bulk. Extrapolation suggests that at even lower temperatures current may still flow primarily through the bulk rather than, as had been assumed, through edge modes. In conclusion, an argument for bulk current flow previously applied to quantum Hall systems supports this picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Buried Dirac Points in Quantum Spin Hall Insulators: Implications for Majorana Kramers Pair-Based Quantum Computing

Quantum spin Hall insulators (QSHIs) host helical electronic edge states that are protected from backscattering due to time-reversal symmetry (TRS). Despite considerable work investigating QSHI edge states, there is still an open question about their unexpected resilience to large magnetic fields where TRS is undoubtedly broken. In this work, we investigate the transport properties of helical edge states in a QSHI-superconductor (QSHI-SC) junction formed by a In⁢As(15 nm)/Ga⁢Sb(5 nm) double quantum well and a superconducting tantalum (Ta) constriction. We observe a robust conductance plateau up to 2 T, signaling resilient edge-state transport. Using a modified Landauer-Büttiker analysis, we find that the zero-field conductance is consistent with 98% Andreev-reflection probability owing to the high transparency of the (In⁢As/Ga⁢Sb)-Ta interface. Such resilience is consistent with the Dirac point for the edge states being buried in the bulk valence band. We further theoretically show that a buried Dirac point does not affect the robustness of the quasi-one-dimensional topological superconducting phase. We find that a buried Dirac point favors the hybridization of Majorana Kramers pairs (MKPs)—predicted to exist in a QSHI-SC constriction—and fermionic modes in the QSHI vacuum edge resulting in extended MKP states, highlighting the subtle role of buried Dirac points in probing MKPs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Time-reversal invariant topological moiré flat band: A platform for the fractional quantum spin Hall effect

Motivated by recent observation of the quantum spin Hall effect in monolayer germanene and twisted bilayer transition-metal-dichalcogenides (TMDs), we study the topological phases of moir twisted bilayers with time-reversal symmetry and spin sz conservation. By using a continuum model description which can be applied to both germanene and TMD bilayers, we show that at small twist angles the emergent moir flat bands can be topologically nontrivial due to inversion symmetry breaking. Each of these flat bands admits a lowest-Landau-level description for each spin projection in the chiral limit and at magic twist angle. Furthermore, this allows for the construction of a many-body Laughlin state with time-reversal symmetry which can be stabilized by a short-range pseudopotential, and therefore serves as an ideal platform for realizing the so-far elusive fractional quantum spin Hall effect with emergent spin-1/2 U(1) symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Kondo interaction of quantum spin Hall edge channels with charge puddles

Under time-reversal symmetry, quantum spin Hall edge channels are protected against elastic backscattering. However, even for samples which exhibit conductance quantization due to the quantum spin Hall effect, reproducible fluctuations shape the quantization plateau when the chemical potential is tuned through the bulk gap. Here, we examine those fluctuations in micron-sized HgTe quantum well devices. By performing temperature- and gate-dependent measurements, we conclude that “charge puddles” in the narrow-gap material have a Kondo-type interaction with the edge channels resulting in the observed conductance fluctuations. Our results provide insight into the underlying mechanisms of scattering in quantum spin Hall edge channels.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evidence of a room-temperature quantum spin Hall edge state in a higher-order topological insulator

Room-temperature realization of macroscopic quantum phases is one of the major pursuits in fundamental physics. The quantum spin Hall phase is a topological quantum phase that features a two-dimensional insulating bulk and a helical edge state. Here we use vector magnetic field and variable temperature based scanning tunnelling microscopy to provide micro-spectroscopic evidence for a room-temperature quantum spin Hall edge state on the surface of the higher-order topological insulator Bi 4 Br 4 . Here, we find that the atomically resolved lattice exhibits a large insulating gap of over 200 meV, and an atomically sharp monolayer step edge hosts an in-gap gapless state, suggesting topological bulk–boundary correspondence. An external magnetic field can gap the edge state, consistent with the time-reversal symmetry protection inherent in the underlying band topology. We further identify the geometrical hybridization of such edge states, which not only supports the Z 2 topology of the quantum spin Hall state but also visualizes the building blocks of the higher-order topological insulator phase. Our results further encourage the exploration of high-temperature transport quantization of the putative topological phase reported here.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Quantized resistance revealed at the criticality of the quantum anomalous Hall phase transitions

In multilayered magnetic topological insulator structures, magnetization reversal processes can drive topological phase transitions between quantum anomalous Hall, axion insulator, and normal insulator states. Here we report an examination of the critical behavior of two such transitions: the quantum anomalous Hall to normal insulator (QAH-NI), and quantum anomalous Hall to axion insulator (QAH-AXI) transitions. By introducing a new analysis protocol wherein temperature dependent variations in the magnetic coercivity are accounted for, the critical behavior of the QAH-NI and QAH-AXI transitions are evaluated over a wide range of temperature and magnetic field. Despite the uniqueness of these different transitions, quantized longitudinal resistance and Hall conductance are observed at criticality in both cases. Furthermore, critical exponents were extracted for QAH-AXI transitions occurring at magnetization reversals of two different magnetic layers. The observation of consistent critical exponents and resistances in each case, independent of the magnetic layer details, demonstrates critical behaviors in quantum anomalous Hall transitions to be of electronic rather than magnetic origin. Our finding offers a new avenue for studies of phase transition and criticality in QAH insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Bulk dissipation in the quantum anomalous Hall effect

Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures

36 MATERIALS SCIENCE↗
DOE OSTI2024

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit — ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures

ABSTRACT The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness

Magnetic topological states refer to a class of exotic phases in magnetic materials with the non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10 nm. Here, molecular beam epitaxy (MBE) is employed to synthesize magnetic TI trilayers with a thickness of up to ≈106 nm. It is found that these samples exhibit well-quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying the magnetic dopants, gate voltages, temperature, and external magnetic fields, the properties of these thick QAH insulators are examined and the robustness of the 3D QAH effect is demonstrated. The realization of the well-quantized 3D QAH effect indicates that the nonchiral side surface states of the thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred-nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Quantum anomalous Hall effect in perfectly compensated collinear antiferromagnetic thin films

Here, we show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel at some temperature, independent of the interior layer magnetization configuration. Using this criterion, we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magnetization, and discuss strategies for realizing these interesting magnetic states experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Recent progress of MnBi 2 Te 4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi 2 Te 4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi 2 Te 4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi 2 Te 4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Furthermore, understanding how the breakdown of the QAHE occurs in MnBi 2 Te 4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi 2 Te 4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi 2 Te 4 thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Disordered quantum transport in quantum anomalous Hall insulator-superconductor junctions

In this work we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the mean-free path due to elastic scattering much smaller than the sample size and superconductor coherence length, and discuss disordered transport behavior in the presence of different numbers of chiral edge modes, as well as nonchiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or nonchiral metallic modes will lead to a strong Andreev conversion, giving rise to half-electron half-hole transmission through the junction structure, in sharp contrast to the suppression of Andreev conversion in the single chiral edge mode case. Finally, our results suggest the importance of additional transport modes in the quantum anomalous Hall insulator-superconductor junction and will guide future transport measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Moiré commensurability and the quantum anomalous Hall effect in twisted bilayer graphene on hexagonal boron nitride

The quantum anomalous Hall (QAH) effect is sometimes observed in twisted bilayer graphene (tBG) when it is nearly aligned with an encapsulating hexagonal boron nitride (hBN) layer. We propose that the appearance or absence of the QAH effect in individual devices could be related to commensurability between the graphene/graphene and graphene/hBN moiré patterns. We identify a series of points in the (θ GG , θ GBN ) twist-angle space at which the two moiré patterns are commensurate, allowing moiré band theory to be applied, and we show that the band Chern numbers are in this case sensitive to a rigid in-plane hBN displacement. Given this property, we argue that the QAH effect is likely only when (i) the (θ GG , θ GBN ) twist-angle-pair is close enough to a commensurate point that the two moiré patterns yield a supermoiré pattern with a sufficiently long length scale, and (ii) the supermoiré has a percolating topologically nontrivial QAH phase. For twist angles far from commensurability, the hBN layer acts as a source of disorder that can destroy the QAH effect. Our proposal can explain a number of current experimental observations. Finally, further experimental studies that can test this proposal more directly are suggested.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Entropy of Strongly Correlated Electrons in a Partially Filled Landau Level

We use high-resolution chemical potential measurements to extract the entropy of monolayer and bilayer graphene in the quantum Hall regime via the Maxwell relation [(𝑑⁢𝜇)/(𝑑⁢𝑇)]| 𝑁 =−[(𝑑⁢𝑆)/(𝑑⁢𝑁)]| 𝑇 . Measuring the entropy from 𝑇 = 300 K down to 𝑇 = 200 mK, we identify the sequential emergence of quantum Hall ferromagnetism, fractional quantum Hall states, and various charge orders by comparing the measured entropy in different temperature regimes with theoretical models. At the lowest temperature of 𝑇 ≈ 200 mK we perform a detailed study of the entropy near even-denominator fractional quantum Hall states in bilayer graphene, and comment on the possible topological origin of the observed excess entropy.

Assouline, Alexandre [University of California, Sa↗
DOE OSTI2020

Concurrence of quantum anomalous Hall and topological Hall effects in magnetic topological insulator sandwich heterostructures

The quantum anomalous Hall (QAH) effect is a consequence of non-zero Berry curvature in momentum space. The QAH insulator harbours dissipation-free chiral edge states in the absence of an external magnetic field. Yet, the topological Hall (TH) effect, a hallmark of chiral spin textures, is a consequence of real-space Berry curvature. Herein, by inserting a topological insulator (TI) layer between two magnetic TI layers, we realized the concurrence of the TH effect and the QAH effect through electric-field gating. The TH effect is probed by bulk carriers, whereas the QAH effect is characterized by chiral edge states. The appearance of the TH effect in the QAH insulating regime is a consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii–Moriya interaction and occurs during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures provides a platform for proof-of-concept dis- sipationless spin-textured spintronic applications.

36 MATERIALS SCIENCE↗