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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Method and apparatus for reducing memory access latency

Logic such as a memory controller writes primary data from an incoming write request as well as corresponding replicated primary data (which is a copy of the primary data) to one or more different memory banks of random access memory in response to determining a memory access contention condition for the address (including a range of addresses) corresponding to the incoming write request. When the memory bank containing the primary data is busy servicing a write request, such as to another row of memory in the bank, a read request for the primary data is serviced by reading the replicated primary data from the different memory bank of the random access memory to service the incoming read request.

97 MATHEMATICS AND COMPUTING↗

A seamless acquisition digital storage oscilloscope with three-dimensional waveform display

In traditional digital storage oscilloscope (DSO), sampled data need to be processed after each acquisition. During data processing, the acquisition is stopped and oscilloscope is blind to the input signal. Thus, this duration is called dead time. With the rapid development of modern electronic systems, the effect of infrequent events becomes significant. To capture these occasional events in shorter time, dead time in traditional DSO that causes the loss of measured signal needs to be reduced or even eliminated. In this paper, a seamless acquisition oscilloscope without dead time is proposed. In this oscilloscope, three-dimensional waveform mapping (TWM) technique, which converts sampled data to displayed waveform, is proposed. With this technique, not only the process speed is improved, but also the probability information of waveform is displayed with different brightness. Thus, a three-dimensional waveform is shown to the user. To reduce processing time further, parallel TWM which processes several sampled points simultaneously, and dual-port random access memory based pipelining technique which can process one sampling point in one clock period are proposed. Furthermore, two DDR3 (Double-Data-Rate Three Synchronous Dynamic Random Access Memory) are used for storing sampled data alternately, thus the acquisition can continue during data processing. Therefore, the dead time of DSO is eliminated. In addition, a double-pulse test method is adopted to test the waveform capturing rate (WCR) of the oscilloscope and a combined pulse test method is employed to evaluate the oscilloscope's capture ability comprehensively. The experiment results show that the WCR of the designed oscilloscope is 6 250 000 wfms/s (waveforms per second), the highest value in all existing oscilloscopes. The testing results also prove that there is no dead time in our oscilloscope, thus realizing the seamless acquisition.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Protocol for Communication Networking for Formation Flying

An application-layer protocol and a network architecture have been proposed for data communications among multiple autonomous spacecraft that are required to fly in a precise formation in order to perform scientific observations. The protocol could also be applied to other autonomous vehicles operating in formation, including robotic aircraft, robotic land vehicles, and robotic underwater vehicles. A group of spacecraft or other vehicles to which the protocol applies could be characterized as a precision-formation- flying (PFF) network, and each vehicle could be characterized as a node in the PFF network. In order to support precise formation flying, it would be necessary to establish a corresponding communication network, through which the vehicles could exchange position and orientation data and formation-control commands. The communication network must enable communication during early phases of a mission, when little positional knowledge is available. Particularly during early mission phases, the distances among vehicles may be so large that communication could be achieved only by relaying across multiple links. The large distances and need for omnidirectional coverage would limit communication links to operation at low bandwidth during these mission phases. Once the vehicles were in formation and distances were shorter, the communication network would be required to provide high-bandwidth, low-jitter service to support tight formation-control loops. The proposed protocol and architecture, intended to satisfy the aforementioned and other requirements, are based on a standard layered-reference-model concept. The proposed application protocol would be used in conjunction with conventional network, data-link, and physical-layer protocols. The proposed protocol includes the ubiquitous Institute of Electrical and Electronics Engineers (IEEE) 802.11 medium access control (MAC) protocol to be used in the datalink layer. In addition to its widespread and proven use in diverse local-area networks, this protocol offers both (1) a random- access mode needed for the early PFF deployment phase and (2) a time-bounded-services mode needed during PFF-maintenance operations. Switching between these two modes could be controlled by upper-layer entities using standard link-management mechanisms. Because the early deployment phase of a PFF mission can be expected to involve multihop relaying to achieve network connectivity (see figure), the proposed protocol includes the open shortest path first (OSPF) network protocol that is commonly used in the Internet. Each spacecraft in a PFF network would be in one of seven distinct states as the mission evolved from initial deployment, through coarse formation, and into precise formation. Reconfiguration of the formation to perform different scientific observations would also cause state changes among the network nodes. The application protocol provides for recognition and tracking of the seven states for each node and for protocol changes under specified conditions to adapt the network and satisfy communication requirements associated with the current PFF mission phase. Except during early deployment, when peer-to-peer random access discovery methods would be used, the application protocol provides for operation in a centralized manner.

Jennings, Esther↗

Conceptual design and feasibility evaluation model of a 10 to the 8th power bit oligatomic mass memory. Volume 1: Conceptual design

The oligatomic (mirror) thin film memory technology is a suitable candidate for general purpose spaceborne applications in the post-1975 time frame. Capacities of around 10 to the 8th power bits can be reliably implemented with systems designed around a 335 million bit module. The recommended mode was determined following an investigation of implementation sizes ranging from an 8,000,000 to 100,000,000 bits per module. Cost, power, weight, volume, reliability, maintainability and speed were investigated. The memory includes random access, NDRO, SEC-DED, nonvolatility, and dual interface characteristics. The applications most suitable for the technology are those involving a large capacity with high speed (no latency), nonvolatility, and random accessing.

Recksiedler, A. L.↗

Application of holographic optical techniques to bulk memory.

Current efforts to exploit the spatial redundancy and built-in imaging of holographic optical techniques to provide high information densities without critical alignment and tight mechanical tolerances are reviewed. Read-write-erase in situ operation is possible but is presently impractical because of limitations in available recording media. As these are overcome, it should prove feasible to build holographic bulk memories with mechanically replaceable hologram plates featuring very fast (less than 2 microsec) random access to large (greater than 100 million bit) data blocks and very high throughput (greater than 500 Mbit/sec). Using volume holographic storage it may eventually be possible to realize random-access mass memories which require no mechanical motion and yet provide very high capacity.

Anderson, L. K.↗

Optical mass memories

Optical and magnetic variants in the design of trillion-bit read/write memories are compared and tabulated. Components and materials suitable for a random access read/write nonmoving memory system are examined, with preference given to holography and photoplastic materials. Advantages and deficiencies of photoplastics are reviewed. Holographic page composer design, essential features of an optical memory with no moving parts, fiche-oriented random access memory design, and materials suitable for an efficient photoplastic fiche are considered. The optical variants offer advantages in lower volume and weight at data transfer rates near 1 Mbit/sec, but power drain is of the same order as for the magnetic variants (tape memory, disk memory). The mechanical properties of photoplastic film materials still leave much to be desired.

Bailey, G. A.↗

The ALOHA SYSTEM

The report provides a status report and description of THE ALOHA SYSTEM research project at the University of Hawaii. THE ALOHA SYSTEM involves the analysis and construction of advanced methods of random access communications in large computer-communication systems. The existing ALOHA SYSTEM computer-communication network uses two 24,000 baud channels in the UHF band. The system employs message switching techniques similar to those of the ARPANET, in conjunction with a novel form of random access radio channel multiplexing. By means of these techniques the system has the capacity to accommodate several hundred active users of alphanumeric consoles on the two channels available. Each of these users can transmit and receive at a peak data rate of 24,000 baud although the average data rate of the users must of course be considerably less.

Abramson, N.↗

Data processing/display design for the space shuttle/spacelab Electromagnetic Environment Experiment (EEE)

Methods for data analysis, data compression including universal coding, storage and retrieval on random access storage devices, and display were developed and implemented on the GSFC Interdata computer. The original 64 bit per frequency band representation was reduced to 10 bits through source coding/universal coding, a compression ratio of 6.4, prior to storage. Rapid encoding/decoding was achieved by the algorithms used so that rapid random access is retained.

Davisson, L. D.↗

Particle sensor array

A particle sensor array which in a preferred embodiment comprises a static random access memory having a plurality of ion-sensitive memory cells, each such cell comprising at least one pull-down field effect transistor having a sensitive drain surface area (such as by bloating) and at least one pull-up field effect transistor having a source connected to an offset voltage. The sensitive drain surface area and the offset voltage are selected for memory cell upset by incident ions such as alpha-particles. The static random access memory of the present invention provides a means for selectively biasing the memory cells into the same state in which each of the sensitive drain surface areas is reverse biased and then selectively reducing the reversed bias on these sensitive drain surface areas for increasing the upset sensitivity of the cells to ions. The resulting selectively sensitive memory cells can be used in a number of applications. By way of example, the present invention can be used for measuring the linear energy transfer of ion particles, as well as a device for assessing the resistance of CMOS latches to Cosmic Ray induced single event upsets. The sensor of the present invention can also be used to determine the uniformity of an ion beam.

Buehler, Martin G.↗

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge 2 Sb 2 Te 5 ). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc 0.2 Sb 2 Te 3 ) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

Science & Technology - Other Topics↗

Multiple Access Trade Study

The Personal Access Satellite System (PASS) strawman design uses a hybrid Time Division Multiple Access (TDMA)/Frequency Division Multiple Access (FDMA) implementation. TDMA is used for the forward direction (from Suppliers to Users), and FDMA for the return direction (from Users to Suppliers). An alternative architecture is proposed that will require minimal real time coordination and yet provide a fast access method by using random access Code Division Multiple Access (CDMA). The CDMA system issues are addressed such as connecting suppliers and users, both of whom may be located anywhere in the CONUS, when the user terminals are constrained in size and weight; and providing efficient traffic routing under highly variable traffic requirements. It is assumed that bandwidth efficiency is not of paramount importance. CDMA or Spread Spectrum Multiple Access (SSMA) communication is a method in which a group of carriers operate at the same nominal center frequency but are separable from each other by the low cross correlation of the spreading codes used. Interference and multipath rejection capability, ease of selective addressing and message screening, low density power spectra for signal hiding and security, and high resolution ranging are among the benefits of spread spectrum communications.

Motamedi, Masoud↗

Simultaneous measurement of the exchange parameter and saturation magnetization using propagating spin waves

The exchange interaction in ferromagnetic ultra thin films is a critical parameter in magnetization-based storage and logic devices, yet the accurate measurement of it remains a challenge. While a variety of approaches are currently used to determine the exchange parameter, each has its limitations, and good agreement among them has not been achieved. To date, neutron scattering, magnetometry, Brillouin light scattering, spin-torque ferromagnetic resonance spectroscopy, and Kerr microscopy have all been used to determine the exchange parameter. Here, we present a method that exploits the wavevector selectivity of Brillouin light scattering to measure the spin wave dispersion in both the backward volume and Damon–Eshbach orientations. The exchange, saturation magnetization, and magnetic thickness are then determined by a simultaneous fit of both dispersion branches with general spin wave theory without any prior knowledge of the thickness of a magnetic “dead layer.” In this study, we demonstrate the strength of this technique for ultrathin metallic films, typical of those commonly used in industrial applications for magnetic random-access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Grouper: A Compact, Streamable Triangle Mesh Data Structure

Here, we present Grouper: an all-in-one compact file format, random-access data structure, and streamable representation for large triangle meshes. Similarly to the recently published SQuad representation, Grouper represents the geometry and connectivity of a mesh by grouping vertices and triangles into fixed-size records, most of which store two adjacent triangles and a shared vertex. Unlike SQuad, however, Grouper interleaves geometry with connectivity and uses a new connectivity representation to ensure that vertices and triangles can be stored in a coherent order that enables memory-efficient sequential stream processing. We also present a linear-time construction algorithm that allows streaming out Grouper meshes using a small memory footprint while preserving the initial ordering of vertices. In this construction, we show how the problem of assigning vertices and triangles to groups reduces to a well-known NP-hard optimization problem, and present a simple yet effective heuristic solution that performs well in practice. Our array-based Grouper representation also doubles as a triangle mesh data structure that allows direct access to vertices and triangles. Storing only about two integer references per triangle-i.e., less than the three vertex references stored with each triangle in a conventional indexed mesh format-Grouper answers both incidence and adjacency queries in amortized constant time. Our compact representation enables data-parallel processing on multicore computers, instant partitioning and fast transmission for distributed processing, as well as efficient out-of-core access. We demonstrate the versatility and performance benefits of Grouper using a suite of example meshes and processing kernels.

97 MATHEMATICS AND COMPUTING↗

SEU/SRAM as a Process Monitor

The SEU/SRAM is a 4-kbit Static Random Access Memory (SRAM) designed to detect Single-Event Upsets (SEUs) produced by high energy particles. This device was used to determine the distribution in the memory cell spontaneous flip potential.

distribution residual plots↗

Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy

Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits

At HiTEC2018, NASA Glenn Research Center reported the first demonstration of yearlong 500°C operation of ceramic-packaged “Generation 10” ~200-transistor integrated circuits (ICs) based on two-level interconnect silicon carbide (4H-SiC) junction field effect transistors and resistors (JFET-R). This HiTEC 2021submissionupdateson-going efforts at NASA Glenn spanning two subsequent prototype IC generations “11 and 12” to increase both complexity and durability of these ICs. Increased chip complexities of around 1000 transistors/chip for Gen. 11and near 3000 transistors/chip for Gen. 12 aremade possibleby reductions in minimum layout feature sizes (including resistorwidth shrinkage from 6 μm to 2μm) coupled with enlarged die size (from 3x3 mm to 5x5mm). Gen. 11 ICs electrically tested to date include an 8-bit delta-sigma analog to digital converter (ADC) as well as upscaled random access memory (RAM)and nearly 1 kbit read only memory (ROM). However, Gen. 11 prototype ICs exhibited significantly lower yield and durability than Gen. 10 ICs. Development of revised processing is being investigated towards mitigating these issues in subsequentGen. 12 fabrication runcurrentlyin progress.

Silicon Carbide↗

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗