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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

Dead Zone Accretion Flows in Protostellar Disks

Planets form inside protostellar disks in a dead zone where the electrical resistivity of the gas is too high for magnetic forces to drive turbulence. We show that much of the dead zone nevertheless is active and flows toward the star while smooth, large-scale magnetic fields transfer the orbital angular momentum radially outward. Stellar X-ray and radionuclide ionization sustain a weak coupling of the dead zone gas to the magnetic fields, despite the rapid recombination of free charges on dust grains. Net radial magnetic fields are generated in the magnetorotational turbulence in the electrically conducting top and bottom surface layers of the disk, and reach the midplane by ohmic diffusion. A toroidal component to the fields is produced near the midplane by the orbital shear. The process is similar to the magnetization of the solar tachocline. The result is a laminar, magnetically driven accretion flow in the region where the planets form.

solar system↗

Non-standard amino acid recognition by Escherichia coli leucyl-tRNA synthetase

Recombinant E. coli leucyl-tRNA synthetase was screened for amino acid-dependent pyrophosphate exchange activity using noncognate aliphatic amino acids including norvaline, homocysteine, norleucine, methionine, and homoserine. [32P]-labeled reaction products were separated by thin layer chromatography using a novel solvent system and then quantified by phosphorimaging. Norvaline which differs from leucine by only one methyl group stimulated pyrophosphate exchange activity as did both homocysteine and norleucine to a lesser extent. The KM parameters for leucine and norvaline were measured to be 10 micromoles and 1.5 mM, respectively. Experiments are in progress to determine if norvaline is transferred to tRNA(Leu) and/or edited by a pre- or post-transfer mechanism.

Non-NASA Center↗

Control of superlattice morphology in GaAs sub1-subxPsubx cascade cells

Superlattices of GaAs(1-x)p(x) are being incorporated into cascade solar cell structures in order to reduce the dislocation density in the top cells and thus reduce recombination loss and increase output voltage. For a superlattice to effectively block the propagation of dislocations its average composition must be equal to that of the layer beneath it (from efficiency considerations for a cascade cell, the average composition should be about GaAs(.7)P(.3). When superlattices of this approximate composition were grown on GaAs by MOCVD, severe distortion of the crystal layers was observed. The essential features of this distortion are nonplanar morphology and accelerated etching in regions containing excess phosphorus and clusters of dislocations. Similar observations have been made with superlattices grown with two other MOCVD systems, indicating that the problem is of fundamental technological significance, not just an artifact of one particular growth system. The nature of the distortion effect is described, and several strategies for preventing its occurrence are presented.

Blakeslee, A. E.↗

The Formation Environment of Jupiter's Moons

Do circumjovian disk models have conductivities consistent with the assumed accretion stresses? Broadly, YES, for both minimum-mass and gas-starved models: magnetic stresses are weak in the MM models, as needed to keep the material in place. Stresses are stronger in the gas-starved models, as assumed in deriving the flow to the planet. However, future minimum-mass modeling may need to consider the loss of dust-depleted gas from the surface layers to the planet. The gas-starved models should have stress varying in radius. Dust evolution is a key process for further study, since the recombination occurs on the grains.

planetary science↗

Silicon ions below 100 km: A case for SiO2(+)

Silicon ions are normally detected at altitudes above 100 km and within sporadic E layers. Traces have rarely been observed within the more permanent metallic layer near 93 km. This is surprising since silicon is an important constituent of chondritic meteorites, which ablate material in this region to provide a primary source of the metallic species observed there. Evidence is presented that Si(+)ions form SiO2(+) at the lower altitudes, and exist in this ionic state prior to recombination. A rocket launched from El Arenosillo, Spain on 3 July 1972, at 0743 LMT, during the predicted period of the Beta Taurids meteor shower, passed through a continuous belt of metallic ions that began near 85 km, ended near 115 km, and exhibited an order of magnitude increase in the form of a layer near 114 km. Si(+)was measured in and below the ledge down to 103 km. It showed a rapid decrease below this height. Radiative association is offered as a primary mechanism for SiO2(+) production.

Goldberg, R. A.↗

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

n-B-pi-p Superlattice Infrared Detector

A specially designed barrier (B) is inserted at the n-pi junction [where most GR (generation-recombination) processes take place] in the standard n-pi-p structure to substantially reduce generation-recombination dark currents. The resulting n-Bpi- p structure also has reduced tunneling dark currents, thereby solving some of the limitations to which current type II strained layer superlattice infrared detectors are prone. This innovation is compatible with common read-out integrated circuits (ROICs).

Ting, David Z.↗

The Sheath Transport Observer for the Redistribution of Mass (STORM) Image

All of the solar wind energy that powers magnetospheric processes passes through the magnetosheath and magnetopause. Global images of the magnetosheath and magnetopause boundary layers will resolve longstanding controversy surrounding fundamental phenomena that occur at the magnetopause and provide information needed to improve operational space weather models. Recent developments showing that soft X-rays (0.15-1 keV) result from high charge state solar wind ions undergoing charge exchange recombination through collisions with exospheric neutral atoms has led to the realization that soft X-ray imaging can provide global maps of the high-density shocked solar wind within the magnetosheath and cusps, regions lying between the lower density solar wind and magnetosphere. We discuss an instrument concept called the Sheath Transport Observer for the Redistribution of Mass (STORM), an X-ray imager suitable for simultaneously imaging the dayside magnetosheath, the magnetopause boundary layers, and the cusps.

Kuntz, Kip↗

The Sheath Transport Observer for the Redistribution of Mass (STORM) Imager

All of the solar wind energy that powers magnetospheric processes passes through the magnetosheath and magnetopause. Global images of the magnetosheath and magnetopause boundary layers will resolve longstanding controversies surrounding fundamental phenomena that occur at the magnetopause and provide information needed to improve operational space weather models. Recent developments showing that soft X-rays (0.15-1 keV) result from high charge state solar wind ions undergoing charge exchange recombination through collisions with exospheric neutral atoms has led to the realization that soft X-ray imaging can provide global maps of the high-density shocked solar wind within the magnetosheath and cusps, regions lying between the lower density solar wind and magnetosphere. We discuss an instrument concept called the Sheath Transport Observer for the Redistribution of Mass (STORM), an X-ray imager suitable for simultaneously imaging the dayside magnetosheath, the magnetopause boundary layers, and the cusps.

Collier, Michael R.↗

Comparison of the N2/+/ photochemistry at different phases of the solar cycle

Thermospheric and ionospheric data obtained on 12 orbits throughout 1978 are analyzed using the chemical scheme established during 1974 when the solar EUV intensities were less than half of those encountered in 1978. It is shown that this scheme, with some modification, applies to the more active period. Photoionization of N2 is found to be the major source of N2(+) in the F2 layer, by contrast with the charge exchange reaction of O+(2D) with N2, which was dominant for the lower solar activity. The results confirm the laboratory measurements of the dissociative recombination rate coefficient for N2 with electrons, as well as the theoretically calculated rate coefficient for the quenching of O+(2D) by electrons.

Torr, M. R.↗

Hydrodynamic study of Supernova 1987A: The phase of a wave of cooling and recombination

The dependence of the bolometric light curve and of the effective temperature on the density distribution in a progenitor, its chemical composition, mass, radius, and explosion energy is studied. It is shown that, just before the supernova 1987 A outburst, the outside layers of the blue supergiant Sk-69.202 deg had a density distribution similar to that of the polytropic model with an index of n equals 3, a chemical composition with a mass fraction of hydrogen of the order of 0.1, and a relative helium abundance of about 0.9.

Utrobin, V. P.↗

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗

Effects of electric fields and other processes upon the nighttime high-latitude F layer

The dynamics of the nighttime high-latitude F region is studied with special emphasis on the formation of the electron-density trough region which lies equatorward of the auroral oval. It is found that the absence of photoionization together with ordinary ionic recombination and slow plasma convection velocity can give a deep trough over a period of many hours. However, the normal global pattern of electric fields has regions of plasma convection sufficiently rapid to affect the rate of O(+) + N2 reactions and to speed the rate of ionospheric decay. In addition, the escape of thermal plasma via the polar winds as well as N2 vibrational excitation and enhanced N2 densities act to deplete the ionosphere. In combination, these destructive processes can readily account for the great variety of troughs found by experimentation. Thus, it appears that there is no single cause for the observed troughs, but that at various times, different processes act together to create density depressions of substantial magnitude.

Schunk, R. W.↗

Internal optical losses in very thin CW heterojunction laser diodes

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

Butler, J. K.↗

Ion-neutral coupling in the high-latitude F region Evaluation of ion heating terms from Dynamics Explorer 2

Ion and neutral motions in the high latitude F layer were studied simultaneously during six passes of the Dynamics Explorer 2 spacecraft. The passes were made over the south polar cap in October 1981. An ion energy balance equation was defined to express the exchange of energy between the F layer and other atmospheric constituents. A momentum equation expressed the momentum exchange between the species. An approximate form of the energy balance equation was also formulated. The time constant for ion-neutral collisional momentum transfer significantly affected Joule heating in the F layer. Regions of large velocity disparities and ion temperature enhancements were detected as hot spots. The results indicate that a feedback mechanism may arise in terms of neutral compositional changes and enhanced ionospheric recombination. The approximate equation furnished values for ion heating rates which matched the data.

Killeen, T. L.↗

Theoretical analysis of Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.

Hutchby, J. A.↗

Stagnation flowfield analysis for an aeroassisted vehicle

Hypersonic reactive flowfield results are presented for the flow about an axisymmetric representation of a three-dimensional aeroassisted vehicle using the viscous shock-layer (VSL) and Navier-Stokes (NS) equations for low- and high-altitude entry conditions, respectively. Solutions are limited to the stagnation region. The NS results have been obtained by employing the surface recombination boundary condition for an 11-species air model, whereas the VSL calculations are carried out by using a 5-species model. Three widely used surface recombination rate models are implemented with these two flowfield calculation procedures. The low-density (or high altitude) NS solutions are obtained with surface slip equations and compare quite well with the direct simulation Monte Carlo predictions. For higher densities (or lower altitudes), the no-slip VSL solutions are considered adequate. Results from this study highlight the effect of surface catalyticity on surface heating and electron number density.

Gupta, Roop N.↗