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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

The gridded back contact and its effect on solar cell performance

The effect of using gridded back contacts on silicon solar cells made with Al baked surface field (BSF) was experimentally investigated and found to result in a significant increase in conversion efficiency due to higher short-circuit current. An increase of 5 to 8% was noted for thin cells while a smaller increase was observed for standard thickness cells. Several possible explanatory mechanisms are suggested and summarized, including stress relief, incomplete BSF formation, improved back surface recombination velocity, and improved optical reflection off the back silicon-air interface.

Giuliano, M.↗

Photovoltaic module hot spot durability design and test methods

As part of the Jet Propulsion Laboratory's Low-Cost Solar Array Project, the susceptibility of fat-plate modules to hot-spot problems is investigated. Hot-spot problems arise in modules when the cells become back-biased and operate in the negative-voltage quadrant, as a result of short-circuit current mismatch, cell cracking or shadowing. The details of a qualification test for determining the capability of modules of surviving field hot-spot problems and typical results of this test are presented. In addition, recommended circuit-design techniques for improving the module and array reliability with respect to hot-spot problems are presented.

Arnett, J. C.↗

Measuring Diffusion and Recombination in Polycrystalline Silicon

Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.

Zook, J. D.↗

Electron Beam Could Probe Recombination Centers

Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.

Vonroos, O.↗

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗

O-18 tracer studies of Al2O3 scale formation on NiCrAl alloys

Diffusion processes in Al2O3 scales formed on NiCrAl + Zr alloys were studied by the proton activation technique employing the O-18 isotope as a tracer. The O-18 profiles identified a zone of oxide penetration beneath the external scale. Both this subscale formation and the outer Al2O3 scale thickness were shown by this technique to increase with Zr content in the alloy. Estimated kp's from scale thicknesses were in agreement with gravimetric measurements for various Zr levels. Alternate exposures in O-16 and O-18 revealed that oxygen inward transport was the primary growth mechanism. A qualitative analysis of these O-18 profiles indicated that the oxygen transport was primarily via short-circuit paths, such as grain boundaries.

Reddy, K. P. R.↗

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗

Performance degradation and cleaning of photovoltaic arrays

NASA tests results from an 18 mo program of cleaning silicone-encapsulated and glass fronted solar cell panels in urban and desert environments to examine the effects of cleaning on module performance are reported. The panels were cleaned on weekly, monthly, quarterly, or semi-annual basis, while other panels of the same construction were not cleaned and served as controls. Commercially-available detergents and city water were employed for the tests, and the measurements were maintained of the modules' continuing short-circuit current output. The decay of the output was determined by least square regression analyses. Performance degradation was noticeably less in glass covered, rather than silicone-encapsulated modules which decayed faster in urban than in desert environments. Lower frequency cleanings are recommended where labor costs are high.

Sheskin, T. J.↗

Multiwavelength analyzer for the determination of diffusion lengths

The minority carrier diffusion length Ln in the base or substrate region is an important parameter which governs a solar cell's performance. The present investigation is concerned with the development of a multiwavelength analyzer (MWA) technique for the nondestructive spatial testing of polycrystalline solar cells. The MWA method is based on the utilization of the short-circuit current generated by two or more light-emitting diodes (LEDs) operating at different wavelengths and modulated 180 deg out-of-phase. For a determination of Ln by the MWA technique, it is necessary to know the value of the absorption coefficient.

Stafsudd, O. M.↗

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗

Equivalent electron fluence for solar proton damage in GaAs shallow junction cells

The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.

Wilson, J. W.↗

Surface and allied studies in silicon solar cells

Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and the effective surface recombination velocity of the quasi-neutral base of silicon solar cells. The method requires the observation of only a single transient, and is amenable to automation for in-process monitoring in manufacturing. This method, which is called short-circuit current decay, avoids distortion in the observed transient and consequent inacccuracies that arise from the presence of mobile holes and electrons stored in the p/n junction spacecharge region at the initial instant of the transient. The second main result consists in a formulation of the relevant boundary-value problems that resembles that used in linear two-port network theory. This formulation enables comparisons to be made among various contending methods for measuring material parameters of p/n junction devices, and enables the option of putting the description in the time domain of the transient studies in the form of an infinite series, although closed-form solutions are also possible.

Lindholm, F. A.↗

18-percent efficient terrestrial silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.

Blakers, A. W.↗

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

Culik, J. S.↗

The Tracer Gas Method of Determining the Charging Efficiency of Two-stroke-cycle Diesel Engines

A convenient method has been developed for determining the scavenging efficiency or the charging efficiency of two-stroke-cycle engines. The method consists of introducing a suitable tracer gas into the inlet air of the running engine and measuring chemically its concentration both in the inlet and exhaust gas. Monomethylamine CH(sub 3)NH(sub 2) was found suitable for the purpose as it burns almost completely during combustion, whereas the "short-circuited" portion does not burn at all and can be determined quantitatively in the exhaust. The method was tested both on four-stroke and on two-stroke engines and is considered accurate within 1 percent.

Schweitzer, P H↗

Examples of X-Ray Characterization Techniques in Energy Storage Research

Lithium-ion batteries have revolutionized the portable electronics and transportation sectors. Their performance is often critically dependent on the crystal structures of the anode and cathode electrode materials, which must enable the transport and reversible storage of lithium ions into and out of the lattice. Because lithium is a low-Z element, characterization of materials for lithium-ion batteries can be particularly challenging. Regardless, X-ray techniques enable analysis of material structures to better understand how battery materials perform and degrade, particularly when combined with other materials characterization and electrochemical characterization techniques. While X-ray techniques are most often used in battery research for phase identification of crystal structures, X-ray characterization techniques are also used for a wide variety of other purposes. I will discuss several examples from my research with various collaborators on several projects that highlight the impact that X-ray characterization techniques can have on battery research. The first example will focus on low-temperature microwave-assisted solvothermal synthesis of vanadium-doped LiFePO4 cathode materials for lithium-ion batteries. (1,2) Through a combination of electrochemical and materials characterization, we determined that low temperature synthesis resulted in metastable phases that enabled incorporation of higher dopant levels than resulting from high-temperature synthesis of thermodynamically stable phases. Rietveld refinement of X-ray diffraction data enabled understanding of how lattice parameters changed with doping levels and synthesis temperature. X-ray absorption near edge spectroscopy enabled understanding of the vanadium and iron oxidation states to confirm how vacancies in the structure caused by doping were charge compensated. This was important to understand because the literature suggests doping can improve LiFePO4 electrical conductivity, which improves battery charge and discharge rates. The second example will focus on understanding residual strain in lithium metal anodes. Lithium-ion batteries typically use graphite anodes, but the charge-storage capacity can be theoretically improved ~10x by using lithium metal as the anode material instead. However, lithium anodes suffer from growth of high-aspect-ratio features, such as dendrites, that can pierce nanoporous polymer separators and lead to short circuits and fires. External pressure is commonly applied to cells to enable better morphological control. We hypothesized that applied pressure may promote strain and possibly work hardening during electrochemical cycling, which motivated us to look for evidence of residual strain in lithium metal cycled under applied pressure using X-ray diffraction and sin2(..psi..) analysis. We found that lithium electrodeposited under high pressure exhibited in-plane compressive strain and that that lithium electrodeposited under low pressure did not. (3) The residual strain that accompanies electrodeposition under high pressure may lead to work hardening, which may explain how a soft metal like lithium can puncture separators and why higher pressure does not always decrease short circuits. (4-6) References: 1) Harrison, K. L.; Manthiram, A. Microwave-Assisted Solvothermal Synthesis and Characterization of Metastable LiFe1- x (VO) x PO4 Cathodes. Inorganic chemistry 2011, 50(8), 3613-3620. 2) Harrison, K. L.; Bridges, C. A.; Paranthaman, M. P.; Segre, C. U.; Katsoudas, J.; Maroni, V. A.; Idrobo, J. C.; Goodenough, J. B.; Manthiram, A. Temperature Dependence of Aliovalent-Vanadium Doping in LiFePO4 Cathodes. Chemistry of Materials 2013, 25(5), 768-781. 3) Rodriguez, M. A.; Harrison, K. L.; Goriparti, S.; Griego, J. J.; Boyce, B. L.; Perdue, B. R. Use of a Be-Dome Holder for Texture and Strain Characterization of Li Metal Thin Films via Sin2 (..psi..) Methodology. Powder Diffraction 2020, 35(2), 89-97. 4) Jungjohann, K. L.; Gannon, R. N.; Goriparti, S.; Randolph, S. J.; Merrill, L. C.; Johnson, D. C.; Zavadil, K. R.; Harris, S. J.; Harrison, K. L. Cryogenic Laser Ablation Reveals Short-Circuit Mechanism in Lithium Metal Batteries. ACS Energy Letters 2021, 6(6), 2138-2144. 5) Harrison, K. L.; Merrill, L. C.; Long, D. M.; Randolph, S. J.; Goriparti, S.; Christian, J.; Warren, B.; Roberts, S. A.; Harris, S. J.; Perry, D. L. Cryogenic Electron Microscopy Reveals That Applied Pressure Promotes Short Circuits in Li Batteries. Iscience 2021, 24(12). 6) Harrison, K. L.; Goriparti, S.; Merrill, L. C.; Long, D. M.; Warren, B.; Roberts, S. A.; Perdue, B. R.; Casias, Z.; Cuillier, P.; Boyce, B. L. Effects of Applied Interfacial Pressure on Li-Metal Cycling Performance and Morphology in 4 M LiFSI in DME. ACS Applied Materials & Interfaces 2021, 13(27), 31668-31679.

batteries↗

Quantifying System Strength From Grid-Forming Resources Using Frequency Scan Approach: Preprint

Current industry practices for quantifying the system strength contribution from grid-forming (GFM) resources to ensure stability of power systems dominated by inverter-based resources (IBRs) are primarily based on iterative electromagnetic transient (EMT) time-domain simulation studies. While feasible, these approaches are resource-intensive, lack scalability and intuition, and might not evaluate the system strength contribution over the entire frequency range of interest. This paper introduces a novel, frequency-domain approach to quantify system strength support provided by a GFM resource using frequency scans. The proposed method uses transfer functions from the grid voltage magnitude (V) and phase (?), respectively, to the reactive (Q) and active power (P) output of a GFM resource for quantifying its contribution to system strength. These transfer functions provide a direct measure of the ability of a GFM resource to behave as a stiff voltage source behind a reactance over a specified frequency range, enabling robust quantification of its system strength contribution. The key innovation of this work is the development of a frequency domain system strength metric called the dynamic short-circuit ratio (dSCR) that is suitable for IBR-dominated power systems and is directly related with the familiar short circuit ratio (SCR) metric. The new metric, dSCR, enables the assessment of system strength contributions from both synchronous machines and converter-based GFM resources using a unified benchmark, which is not possible with the traditional SCR metric. The paper also demonstrates how impedance scans could identify if an unstable condition observed during weak grid conditions is a result of the lack active or reactive power support or both. By leveraging the proposed frequency-domain dSCR metric for quantifying system strength contribution from GFM IBRs, the paper demonstrates targeted mitigation strategies for weak grid instabilities without resorting to repeated, time-consuming time-domain simulations. The result is a scalable and efficient approach to remediate stability challenges in power systems with high shares of IBRs and accelerating the integration of GFM technologies for system strength support in power systems.

24 POWER TRANSMISSION AND DISTRIBUTION↗

UTILITY CONTRIBUTION TO ARC FLASH STUDIES

The utility contribution input to an arc flash study has a significant effect on the output incident energy. Accurate input data can be difficult to obtain from serving utilities or is not consistently available. Defaulting to infinite bus can provide non-conservative results. This focus session poster will discuss the challenges with utility contribution with examples and suggest approaches to calculate conservative incident energy when the utility contribution data is not made available.

Arc flash study, utility contribution data, incide↗