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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of optoelectronic materials, especially for photovoltaic applications, but fundamental properties and applications of chalcogenide perovskites remain limited due to the lack of high-quality thin films. In this paper, we report direct epitaxial thin film growth of BaZrS 3 , a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out-of-plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface, the films are polycrystalline with many extended defects, suggesting the potential for further improvement in growth. X-ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region, validating BaZrS 3 as a suitable candidate for ultrathin front absorbers in tandem solar cells. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS 3 films thus far. Our study opens up opportunities to use high quality thin films of chalcogenide perovskites to probe fundamental physical phenomena in thin films and heterostructures and also in photovoltaic and optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Numerical design considerations for vapor transport deposition of metal-halide perovskite thin films

While metal-halide perovskites (MHPs) offer high efficiency and potential application in single junction and tandem solar cells, challenges remain in translating solution-based methods to commercial-scale production. Vapor transport deposition (VTD) offers advantages such as precise control over film composition and purity, as well as the possibility of achieving high thin film deposition rates for scale-up. In this work, a numerical model is developed to simulate the deposition process, analyzing the impact of parameters including source material temperature, carrier gas and dilution gas flow rates, and chamber pressure to optimize deposition rates and film uniformity. Geometrical parameters, such as throw distance, are also found to significantly affect rate and uniformity. Furthermore, the modeling results presented here offer valuable insight for improving the scalability of VTD for the processing of metal-halide perovskites.

Chemical vapor deposition↗
DOE OSTI2021

Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

III-V growth on nanopatterned v-groove Si is a promising route to low cost Si-based tandem solar cells. Here, we study a high temperature MOVPE nucleation regime for growing GaP on v-groove Si. It is shown that MOVPE growth conditions can be used to control the facet selectivity of the GaP nucleation onto the v-grooves. The most promising nucleation condition was studied further, and it was demonstrated that it can be coalesced into a smooth thin film with promising material quality.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Reduced synthesis temperatures of SrNbO 2 N perovskite films for photoelectrochemical fuel production

Perovskite oxynitrides, such as SrNbO 2 N, have been shown to be promising materials for photoanodes in tandem photoelectrochemical cells, due to their suitable bandgap and charge transport. However, thin film synthesis and characterization of oxynitride perovskites are challenging due to high processing temperatures that are incompatible with available substrates. In this work, we report on reduced synthesis temperatures of SrNbO 2 N perovskite thin films on Si substrates across a range of chemical compositions. Polycrystalline thin films with perovskite crystal structure are obtained by sputtering at ambient temperature and annealing at 550-600 degrees C. The perovskite structure has a relatively broad range of cation composition between 50 and 60% Sr with varying O/N ratio according to Rutherford backscattering spectrometry. The maximum photocurrent density was obtained at 55 cation % of Sr, which is slightly Sr-rich compared to the nominal SrNbO 2 N stoichiometry. This work shows the importance of considering cation and anion composition in studying oxynitride perovskites for solar fuel applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. Here, by comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.

High efficiency↗
DOE OSTI2024

Confinement performance predictions for a high field axisymmetric tandem mirror

This paper presents Hammir tandem mirror confinement performance analysis based on Realta Fusion's first-of-a-kind model for axisymmetric magnetic mirror fusion performance. This model uses an integrated end plug simulation model including, heating, equilibrium, and transport combined with a new formulation of the plasma operation contours (POPCONs) technique for the tandem mirror central cell. Using this model in concert with machine learning optimization techniques, it is shown that an end plug utilizing high temperature superconducting magnets and modern neutral beams enables a classical tandem mirror pilot plant producing a fusion gain Q > 5. The approach here represents an important advance in tandem mirror design. The high fidelity end plug model enables calculations of heating and transport in the highly non-Maxwellian end plug to be made more accurately. The detailed end plug modelling performed in this work has highlighted the importance of classical radial transport and neutral beam absorption efficiency on end plug viability. The central cell POPCON technique allows consideration of a wide range of parameters in the relatively simple near-Maxwellian central cell, facilitating the selection of more optimal central cell plasmas. These advances make it possible to find more conservative classical tandem mirror fusion pilot plant operating points with lower temperatures, neutral beam energies, and end plug performance requirements than designs in the literature. Despite being more conservative, it is shown that these operating points have sufficient confinement performance to serve as the basis of a viable fusion pilot plant provided that they can be stabilized against MHD and trapped particle modes.

FOS: Physical sciences↗
DOE OSTI2025

Confinement performance predictions for a high field axisymmetric tandem mirror

This paper presents a Hammir tandem mirror confinement performance analysis based on Realta Fusion’s first-of-a-kind model for axisymmetric magnetic mirror fusion performance. This model uses an integrated end plug simulation model including, heating, equilibrium and transport combined with a new formulation of the plasma operation contours (POPCONs) technique for the tandem mirror central cell. Using this model in concert with machine learning optimization techniques, it is shown that an end plug utilizing high temperature superconducting magnets and modern neutral beams enables a classical tandem mirror pilot plant producing a fusion gain Q > 5. The approach here represents an important advance in tandem mirror design. The high-fidelity end plug model enables calculations of heating and transport in the highly non-Maxwellian end plug to be made more accurately. The detailed end plug modelling performed in this work has highlighted the importance of classical radial transport and neutral beam absorption efficiency on end plug viability. The central cell POPCON technique allows consideration of a wide range of parameters in the relatively simple near-Maxwellian central cell, facilitating the selection of more optimal central cell plasmas. These advances make it possible to find more conservative classical tandem mirror fusion pilot plant operating points with lower temperatures, neutral beam energies and end plug performance requirements than designs in the literature. Despite being more conservative, it is shown that these operating points have sufficient confinement performance to serve as the basis of a viable fusion pilot plant provided that they can be stabilized against magnetohydrodynamic and trapped particle modes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Creating Functional Oxynitride–Silicon Interfaces and SrNbO 2 N Thin Films for Photoelectrochemical Applications

Photoelectrochemical performance dependence upon absorption length, carrier diffusion length, and surface area of an oxynitride photoabsorber is investigated. How best to fabricate optical-quality thin films of bandgap-tunable oxynitrides is also discussed. We targeted the stoichiometric compound SrNbO 2 N as an optimal wide-bandgap photoabsorber (1.9 eV) for use with silicon (1.1 eV) in a tandem structure photoelectrochemical cell. Preparation of perovskite oxynitrides at high-temperature as isolated powders is often straightforward, but it is difficult to integrate them as thin films in tandem junction devices with low-temperature materials. Here we develop the first method to prepare optical-quality SrNbO 2 N thin-films of tunable thickness and roughness on single-crystal silicon substrate. This achievement required an interfacial layer of ultra-thin TaN to be used as a barrier to reduce the inter-diffusion of silicon and oxygen during oxynitride syn-thesis. We produced a variety of SrNbO 2 N film thicknesses (20-440 nm) on n + -Si(100) surfaces. Roughness factor (0.14-21) scaled with thickness. The intrinsic photoelectrochemical activity of these devices was evaluated using a low-barrier sacrificial electron donor. Photocurrent density and photovoltage revealed a significant (and non-linear) dependence on film thickness and roughness. Furthermore, absorption length, carrier diffusion length, and surface area were each found to play key roles. Balancing these is required for optimally performing devices.

08 HYDROGEN↗
DOE OSTI2022

Exotic Materials and Innovative Concepts for Photovoltaics

The current forum issue is related to the contributions to the European Materials Research Society Spring Meeting 2021 (E-MRS), Symposium E "Exotic Materials and Innovative Concepts for Photovoltaics", organized by Thomas Fix, David Ginley, Mutsumi Sugiyama, and Marin Alexe. This symposium was designed to address fundamental and applied research on innovative photovoltaics materials and concepts, as well as device integration. The focus was on nonconventional photovoltaics, or conventional photovoltaics but with a radically new approach.

exotic materials↗
DOE OSTI2022

Semi Transparent Three-Dimensional Macroporous Quaternary Oxynitride Photoanodes for Photoelectrochemical Water Oxidation

Semi transparent three-dimensional macroporous (3DM) photoanodes based on quaternary oxynitrides have the potential to simultaneously realize superior light harvesting and efficient charge transfer in a tandem photoelectrochemical (PEC) cell. A 3DM CaTaO 2 N photoanode was prepared for the first time on a GaN/Al 2 O 3 substrate via a chemical route, and it exhibits a high transmittance of >60% in the wide solar spectrum and a photoresponse onset at −0.3 V versus the reversible hydrogen electrode (V RHE ) under simulated solar illumination. In particular, a plateau photocurrent density of 0.21 mA cm –2 was achieved at a low potential of 0.4 V RHE , which was 1.6-fold and more than 50-fold higher than a two-dimensional macroporous (2DM) CaTaO 2 N/GaN/Al 2 O 3 photoanode and a conventional particle-based CaTaO 2 N/GaN/Al 2 O 3 photoanode, respectively. The bicontinuous, interconnected pore structure within this 3DM film can improve charge carrier separation and collection by reducing the average diffusion distance for minority carriers toward the electrolyte. Optical measurements and simulations verified the enhanced sunlight harvesting in the 3DM photoanode, which was ascribed to the concentrated distribution of the electric field and multiple scattering. Furthermore, this study provides guidance for future synthesis of highly efficient semitransparent 3DM quaternary oxynitride-based photoanodes for a tandem PEC device.

Layers↗
DOE OSTI2020

tert-butoxides as precursors for atomic layer deposition of alkali metal containing thin films

Alkali metal containing materials have become increasingly attractive in a world hunting for sustainable energy materials and green functional devices. Lithium- and sodium battery technology, lead-free piezo- and ferroelectric devices, and record-breaking alkali doped tandem perovskite solar cells are among the applications where alkali metal-containing thin films get increasing attention. Atomic layer deposition (ALD) is one of the enabling thin film deposition techniques that offer chemical and geometrical versatility to realize the implementation of such thin films on an applicable scale. The drawback has until recently been a lack of available precursor chemistry that offers self-limiting growth that is fundamental to ALD. The alkali metal tert-butoxides have been shown to exhibit the necessary properties to facilitate saturating growth for Li-, Na-, K-, and Rb-containing compounds. However, the behavior of the tert-butoxides in ALD-growth has been considered difficult to unravel, with processes exhibiting limited control and low reproducibility. Very little has been reported on trends in reaction mechanisms as the mass of the alkali metal increases. Herein, we summarize the existing literature on the use of alkali metal tert-butoxides as precursors in ALD. We consider differences in the structure and behavior of the tert-butoxides as the alkali metal cation becomes heavier. In addition, we present precursor synthesis routes and key information on precursor structure, stability, and mechanistic behavior. Finally, we provide the first ever report of Cs-containing films by ALD to complement previous work on its lighter counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

How Useful are Conventional I–Vs for Performance Calibration of Single- and Two-Junction Perovskite Solar Cells? A Statistical Analysis of Performance Data on ≈200 Cells from 30 Global Sources

As perovskite photovoltaics (PV) advance from the laboratory to commercial prototypes, their accurate and reliable performance testing is becoming increasingly important. The well-documented dynamic response of perovskite solar cells to an external applied voltage has led to the development of steady-state performance measurement methods; however, these methods have not been widely adopted by the perovskite PV community. A key reason for this is that steady-state measurement methods take tens of minutes to complete, as opposed to conventional "fast" current-voltage (I-V) measurements usually lasting a few seconds. Fast I-Vs arise from a snapshot, almost always not a steady-state condition of the device; however, given their widespread use, the question arises: how do performance parameters of perovskite PV compare when measured with fast I-V and with a steady-state method? Results compiled from approximately 200 perovskite PV cells, including single junction, and two-terminal perovskite-perovskite and perovskite-Si tandems, show that fast I-Vs can provide a useful measure of the open-circuit voltage of the devices, while the short-circuit current and the overall efficiency can be widely misestimated. Here, the implications of these findings on performance testing protocols are discussed and possible options for fast and accurate testing of perovskite PV are proposed.

14 SOLAR ENERGY↗
DOE OSTI2023

Spectral Effects on the Energy Harvesting Efficiency of Two- and Four-Terminal Tandem Photovoltaics

In this work, the effect of a varying spectral irradiance and top cell bandgap on the energy harvesting efficiency of two-terminal (2T) and four-terminal (4T) perovskite//silicon tandem solar cells under outdoor operating conditions is investigated. For the comparison, an optoelectronic model employing a 1 year outdoor data set for a 4T mechanical stacked gallium arsenide (GaAs) on crystalline silicon (Si) tandem device is first validated. Then, the verified model is used to simulate perovskite//silicon tandem devices with a varying perovskite top cell bandgap for a location in Golden, Colorado, USA. Here, a spectral binning method to efficiently reduce and improve the visualization of the 1 min-resolved environmental data while maintaining the simulation accuracy is introduced. The findings reveal that, for a device that is current matched under standard testing conditions, the annual spectral deviation reduces the energy harvesting efficiency by only 2% rel . When additional realistic losses for the 4T are taken into account, 2T devices are shown to have an energy-harvesting efficiency that is at parity or higher. Deviations in the top cell bandgap are more than 0.1 eV from current matching result in a reduced energy harvesting efficiency of more than 5% rel for the 2T tandem device.

14 SOLAR ENERGY↗
DOE OSTI2024

Photovoltaics Based on Direct and Indirect Gap Semiconductors

Direct and thin, or indirect and thick absorbers can yield cells close to 30% but there are practical limits due to defects, cost, reliability. Tandems and new ideas are needed to minimize thermalization and entropy losses and to enable high absorptance in thin Si layers. Direct-gap absorbers have ~1000x higher recombination losses than Si, but being 100x thinner, the limiting 1-sun efficiencies are similar due to 100x higher G.

direct-gap↗
DOE OSTI2022

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

14 SOLAR ENERGY↗
DOE OSTI2020

High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications

Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based on high temperature diffused p-n junctions, featuring a low power conversion efficiency (PCE). Recent years have seen the successful development of Si heterojunction technologies, boosting the PCE of c-Si solar cells over 26%. This article reviews the development status of high-efficiency c-Si heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterojunction technology, polycrystalline silicon (poly-Si) based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free passivating contact technology. The application of silicon heterojunction solar cells for ultra-high efficiency perovskite/c-Si and III-V/c-Si tandem devices is also reviewed. In the last, the perspective, challenge and potential solutions of silicon heterojunction solar cells, as well as the tandem solar cells are discussed.

14 SOLAR ENERGY↗