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At least 163 records · Page 9

Multi-level inverter with mixed device types

Provided is a novel multi-level inverter with mixed device types and methods of controlling same. This novel multi-level inverter topology and control method allows the use of high frequency switching devices for controlled PWM switching, while also using lower frequency switching devices for directional switches. This combination of high frequency PWM switching devices with low frequency directional switching devices allows a cost reduction without a significant performance degradation.

Mekonnen, Ezana T.↗

Ultrafast Activation and Tuning of Topological Textures in Ferroelectric Nanostructures

Polar topological textures are recently discovered in ultra–thin ferroelectrics, including stripe, labyrinth, or bubble states. Enabling to shape on–demand, these topologies herein can provide an original platform for potential applications. Here, using first–principle–based calculations, it is shown that THz electric field pulses are an efficient means for generating a plethora of topological states in ultrathin films made by a prototypical ferroelectric system, depending on the characteristics of these pulses and films. Consequently, these ultrafast electrical pulses in ultra–thin ferroelectrics offer key ingredients for mimicking neuronal and synaptic behaviors, including all–optical devices, and open a new avenue for topological objects to neuromorphic systems.

36 MATERIALS SCIENCE↗

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H4 and H5 and the degenerate H6 valence bands (VB) and the lowest degenerate H6 conduction band (CB) as well as a higher energy transition at the Lpoint. Surprisingly, the degeneracy of the H6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Absence of a Dirac gap in ferromagnetic Cr x (Bi 0.1 Sb 0.9 ) 2-x Te 3

Magnetism breaks the time-reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to the quantum anomalous Hall effect. The most common approach of inducing a ferromagnetic state is by doping magnetic 3d elements into the bulk of 3D topological insulators. In Cr 0.15 (Bi 0.1 Sb 0.9 ) 1.85 Te 3 , the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, T C , the scanning tunneling microscopy studies have reported a large Dirac gap of ~20–100 meV. The discrepancy between the low temperature of quantum anomalous Hall effect (< C ) and large spectroscopic Dirac gaps (>>T C ) found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of the pristine and potassium doped surface of Cr 0.15 (Bi 0.1 Sb 0.9 ) 1.85 Te 3 . Upon potassium deposition, the p-type surface state of the pristine sample was turned into an n-type, allowing the spectroscopic observation of Dirac point. Finally, we find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Guest Editorial Special Section on Advanced Medium-Voltage Power Electronics for Grid Interactive Applications

Medium-voltage power electronics (MVPE) plays essential roles in power grid modernization and links the MV distribution grid with low-voltage consumers and prosumers. Various MVPE devices, such as solid-state transformers or circuit breakers, inverter-based resources, power flow controllers, etc., bring the benefits of voltage conversion and power regulation in small footprint, power quality and efficiency improvements, and enhancements of grid controllability, flexibility, stability, and resilience. The MVPE also makes it possible for sustainable energy systems, such as solar/wind farms and energy storage generating facilities, to directly access to MV grids without multistage conversions. With their intrinsic intelligence and communications, MVPE enables many new smart grid functions and applications, e.g., dc interconnections and electric vehicle charging, which were not envisioned by traditional power grids otherwise. In addition, the integration of physical power processing units with cyber components forms a cyber-physical system, which is essential for long-term sustainability, development, and environmental preservation. Nonetheless, technical challenges on MVPE device reliability, scalable and efficient converter topologies, control stability, large-scale modeling and simulation, to name a few, need to be addressed and advanced to the next level. In conclusion, this Special Section on Advanced MV Power Electronics for Grid Interactive Applications in IEEE Transactions on Power Electronics (TPEL) provides an insight on some of the recent advances in MVPE and emerging challenges and potential solutions.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Structural Assessment of Fluorine, Chlorine, Bromine, Iodine, and Hydroxide Substitutions in Lead Arsenate Apatites (Mimetites)–Pb 5 (AsO 4 ) 3 X

Five lead-arsenate apatites (mimetites)-Pb 5 (AsO 4 ) 3 X—where X denotes fluorine (F), chlorine (Cl), bromine (Br), iodine (I), and hydroxide (OH)—were synthesized via precipitation from aqueous solutions. The crystal structures were determined through Rietveld refinement of powder synchrotron X-ray data. All the compounds crystallized in the hexagonal class symmetry (space group P6 3 /m). The Rietveld refinement indicated that mimetite-Cl, -Br, -I, and -OH had an anion deficiency at position X. Substitution of halogens in a mimetite structure brought about systematic changes in unit-cell parameters, interatomic distances, and metaprism twist angles φ, proportional to the substituted halogen’s ionic radius. Mimetite-OH did not follow the linear correlations determined within the series. Twist angle φ, a useful device for monitoring changes in apatite topology, ranged from 20.34° for mimetite-F to 11.42° for mimetite-I. The geometric method has been proposed for determining the diameter of hexagonal channels hosting halogens in apatites. A comparison of the results with halogenated pyromorphites showed similar systematic trends: the substitutions in mimetites have comparable effect on the interatomic distances as in their phosphorous analogues.

58 GEOSCIENCES↗

Universal topological quantum computation with strongly correlated Majorana edge modes

Abstract Majorana-based quantum gates are not complete for performing universal topological quantum computation while Fibonacci-based gates are difficult to be realized electronically and hardly coincide with the conventional quantum circuit models. In reference Hu and Kane (2018 Phys. Rev. Lett. 120 066801), it has been shown that a strongly correlated Majorana edge mode in a chiral topological superconductor can be decomposed into a Fibonacci anyon τ and a thermal operator anyon ɛ in the tricritical Ising model. The deconfinement of τ and ɛ via the interaction between the fermion modes yields the anyon collisions and gives the braiding of either τ or ɛ . With these braidings, the complete members of a set of universal gates, the Pauli gates, the Hadamard gate and extra phase gates for one-qubit as well as controlled-NOT (CNOT) gate for two-qubits, are topologically assembled. Encoding quantum information and reading out the computation results can be carried out through electric signals. With the sparse-dense mixed encodings, we set up the quantum circuit where the CNOT gate turns out to be a probabilistic gate and design the corresponding devices with thin films of the chiral topological superconductor. As an example of the universal topological quantum computing, we show the application to Shor’s integer factorization algorithm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin disorder control of topological spin texture

Abstract Stabilization of topological spin textures in layered magnets has the potential to drive the development of advanced low-dimensional spintronics devices. However, achieving reliable and flexible manipulation of the topological spin textures beyond skyrmion in a two-dimensional magnet system remains challenging. Here, we demonstrate the introduction of magnetic iron atoms between the van der Waals gap of a layered magnet, Fe 3 GaTe 2 , to modify local anisotropic magnetic interactions. Consequently, we present direct observations of the order-disorder skyrmion lattices transition. In addition, non-trivial topological solitons, such as skyrmioniums and skyrmion bags, are realized at room temperature. Our work highlights the influence of random spin control of non-trivial topological spin textures.

36 MATERIALS SCIENCE↗

Electrical control of topological 3Q state in intercalated van der Waals antiferromagnet Co x -TaS 2

Van der Waals (vdW) magnets have opened a new avenue of opportunities encompassing various interesting phases. Co 1/3 TaS 2 –an intercalated metallic vdW antiferromagnet–is one of the latest additions to this growing list of materials due to its unique topologically nontrivial triple-Q (3Q) ground state. This 3Q tetrahedral structure, which critically depends on the Co content, yields the highest-density Skyrmion lattice with scalar spin chirality, resulting in a noticeable anomalous Hall effect. In this work, we demonstrate control of this topological phase via ionic gating. Using four Co x TaS 2 devices with different Co compositions, we show that ionic gating can cover the entire 3Q topological phase and reveal the nature of the thermodynamically inaccessible phase space. Another striking finding in our data is the existence of an adiabatic discontinuity in the phase boundary between the 3Q and 1Q phases. Our work constitutes one of the first examples of electrical control of scalar spin chirality using an antiferromagnetic metal.

Magnetic properties and materials↗

Transport studies in a gate-tunable three-terminal Josephson junction

Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multiterminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multiterminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage, and magnetic field. Finally, we find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction computational model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Local Markers for Crystalline Topology

Over the last few years, crystalline topology has been used in photonic crystals to realize edge- and corner-localized states that enhance light-matter interactions for potential device applications. However, the band-theoretic approaches currently used to classify bulk topological crystalline phases cannot predict the existence, localization, or spectral isolation of any resulting boundary-localized modes. While interfaces between materials in different crystalline phases must have topological states at some energy, these states need not appear within the band gap, and thus may not be useful for applications. Here, we derive a class of local markers for identifying material topology due to crystalline symmetries, as well as a corresponding measure of topological protection. As our real-space-based approach is inherently local, it immediately reveals the existence and robustness of topological boundary-localized states, yielding a predictive framework for designing topological crystalline heterostructures. In conclusion, beyond enabling the optimization of device geometries, we anticipate that our framework will also provide a route forward to deriving local markers for other classes of topology that are reliant upon spatial symmetries.

74 ATOMIC AND MOLECULAR PHYSICS↗

An operator-based approach to topological photonics

Abstract Recently, the study of topological structures in photonics has garnered significant interest, as these systems can realize robust, nonreciprocal chiral edge states and cavity-like confined states that have applications in both linear and nonlinear devices. However, current band theoretic approaches to understanding topology in photonic systems yield fundamental limitations on the classes of structures that can be studied. Here, we develop a theoretical framework for assessing a photonic structure’s topology directly from its effective Hamiltonian and position operators, as expressed in real space, and without the need to calculate the system’s Bloch eigenstates or band structure. Using this framework, we show that nontrivial topology, and associated boundary-localized chiral resonances, can manifest in photonic crystals with broken time-reversal symmetry that lack a complete band gap, a result that may have implications for new topological laser designs. Finally, we use our operator-based framework to develop a novel class of invariants for topology stemming from a system’s crystalline symmetries, which allows for the prediction of robust localized states for creating waveguides and cavities.

97 MATHEMATICS AND COMPUTING↗

Singular Hall Response from a Correlated Ferromagnetic Flat Nodal‐Line Semimetal

Abstract Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe 3 GaTe 2 , with a high Curie temperature ofT c = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe 3 GaTe 2 , which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle‐resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low‐dimensional Fe 3 GaTe 2 with electronic correlation, topology, and room‐temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.

Chemistry↗

Towards Generalizable and Efficient Circuit Topology Design: A Graph-Transformer-based Surrogate Model with Curriculum Learning

Unlike circuit parameter and sizing optimizations, the automated design of analog circuit topologies poses significant challenges for learning-based approaches. One challenge arises from the combinatorial growth of the topology space with circuit size, which limits the topology optimization efficiency. Moreover, traditional circuit evaluation methods are time-consuming, while the presence of data discontinuity in the topology space makes the accurate prediction of circuit performance exceptionally difficult for unseen topologies. To tackle these challenges, we design a novel Graph-Transformer-based Network (GTN) as the surrogate model for circuit evaluation, offering a substantial acceleration in the speed of circuit topology optimization without sacrificing performance. Our GTN model architecture is designed to embed voltage changes in circuit loops and current flows in connected devices, enabling accurate performance predictions for circuits with unseen topologies. To address the cold start problem when scaling GTN to large-scale circuits, we further introduce a curriculum learning strategy that progressively trains GTN from small-scale to large-scale circuits. This approach enables the model to first learn fundamental physical principles from simpler topologies and gradually adapt to complex configurations, effectively bridging the circuit complexity gap and improving prediction accuracy. Taking the power converter circuit design as an experimental task, our GTN model significantly outperforms an analytical approach and baseline methods directly utilizing graph neural networks. Furthermore, GTN achieves less than 5% relative error and 196× speed-up compared with high-fidelity simulation. Notably, our GTN surrogate model empowers an automatic circuit design framework to discover circuits of comparable quality to those identified through high-fidelity simulation while reducing the time required by up to 98.2%. With curriculum learning, the enhanced GTN achieves a 51% improvement for performance prediction of large-scale circuits compared to the GTN model without this strategy. These advancements establish GTN as a scalable framework for automated analog circuit design across varying circuit complexity levels.

Lu, Haoshu [New Jersey Institute of Technology (NJ↗

Spin filtering and spin separation in 2D materials by topological spin Hall effect

The needs of high speed performance electronic devices for various applications require novel materials and new physical phenomena. For these purposes we propose to study new physical effects based on electron scattering on magnetic skyrmions and vortices distributed in a 2D ferromagnetic material. Herein, we show that the topological spin Hall effect can be efficiently employed for the filtering, switching, and separation of spin currents. For some values of the parameters (conduction electron concentrations, and skyrmion/vortex sizes) it is possible to separate Hall currents for different electron spin projections as it is like for different carrier charges (electrons and holes) in the normal Hall effect. The calculations are performed using the Boltzmann kinetic equation for the nonequilibrium distribution function and the Lippmann–Schwinger equation for the transition matrix in the whole range of the adiabaticity parameter. The spin filtering due to the skyrmion/vortex scattering can be several orders of magnitude more efficient in the narrow range of the electron concentrations than that of the ordinary ferromagnetic spin polarization in spintronics.

36 MATERIALS SCIENCE↗

Colloquium: Ice rule and emergent frustration in particle ice and beyond

Geometric frustration and the ice rule are two concepts that are intimately connected and widespread across condensed matter. The first refers to the inability of a system to satisfy competing interactions in the presence of spatial constraints. The second, in its more general sense, represents a prescription for the minimization of the topological charges in a constrained system. Both can lead to manifolds of high susceptibility and nontrivial, constrained disorder where exotic behaviors can appear and even be designed deliberately. This Colloquium describes the emergence of geometric frustration and the ice rule in soft condensed matter. It excludes the extensive developments of mathematical physics within the field of geometric frustration, but rather focuses on systems of confined microscopic or mesoscopic particles that emerge as a novel paradigm exhibiting spin degrees of freedom. In such systems, geometric frustration can be engineered artificially by controlling the spatial topology and geometry of the lattice, the position of the individual particle units, or their relative filling fraction. These capabilities enable the creation of novel and exotic phases of matter and also potentially lead toward technological applications related to memory and logic devices that are based on the motion of topological defects. The rapid progress in theory and experiments is reviewed and the intimate physical connections with other frustrated systems at different length scales are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large negative magnetoresistance in the off-stoichiometric topological semimetal PrSb x Te 2- x

Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSb x Te 2-x . We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSb x Te 2-x topological materials as a promising platform for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗