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DOE OSTI2022

Ghost-imaging-enhanced noninvasive spectral characterization of stochastic x-ray free-electron-laser pulses

Abstract High-intensity ultrashort X-ray free-electron laser (XFEL) pulses are revolutionizing the study of fundamental nonlinear x-ray matter interactions and coupled electronic and nuclear dynamics. To fully exploit the potential of this powerful tool for advanced x-ray spectroscopies, a noninvasive spectral characterization of incident stochastic XFEL pulses with high resolution is a key requirement. Here we present a methodology that combines high-acceptance angle-resolved photoelectron time-of-flight spectroscopy and ghost imaging to enhance the quality of spectral characterization of x-ray free-electron laser pulses. Implementation of this noninvasive high-resolution x-ray diagnostic can greatly benefit the ultrafast x-ray spectroscopy community by functioning as a transparent beamsplitter for applications such as transient absorption spectroscopy in averaging mode as well as covariance-based x-ray nonlinear spectroscopies in single-shot mode where the shot-to-shot fluctuations inherent to a self-amplified spontaneous emission (SASE) XFEL pulse are a powerful asset.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

Metallic line defect in wide-bandgap transparent perovskite BaSnO 3

A line defect with metallic characteristics has been found in optically transparent BaSnO 3 perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level–crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO 3 films.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Fundamentals and emerging optical applications of hexagonal boron nitride: a tutorial

Hexagonal boron nitride (hBN), also known as white graphite, is a transparent layered crystal with a wide bandgap. Its crystal structure resembles graphite, featuring layers composed of honeycomb lattices held together through van der Waals forces. The layered crystal structure of hBN facilitates exfoliation into thinner flakes and makes it highly anisotropic in in-plane and out-of-plane directions. Unlike graphite, hBN is both insulating and transparent, making it an ideal material for isolating devices from the environment and acting as a waveguide. As a result, hBN has found extensive applications in optical devices, electronic devices, and quantum photonic devices. This comprehensive tutorial aims to provide readers with a thorough understanding of hBN, covering its synthesis, lattice and spectroscopic characterization, and various applications in optoelectronic and quantum photonic devices. This tutorial is designed for both readers without prior experience in hBN and those with expertise in specific fields seeking to understand its relevance and connections to others.

36 MATERIALS SCIENCE↗

DOE OSTI2020

False metals, real insulators, and degenerate gapped metals

This paper deals with a significant family of compounds predicted by simplistic electronic structure theory to be metals but are, in fact, insulators. This false metallic state has been traditionally attributed in the literature to reflect the absence of proper treatment of electron-electron correlation (“Mott insulators”) whereas, in fact, even mean-field like density functional theory describes the insulating phase correctly if the restrictions posed on the simplistic theory are avoided. Such unwarranted restrictions included different forms of disallowing symmetry breaking described in this article. As the science and technology of conductors have transitioned from studying simple elemental metals such as Al or Cu to compound conductors such as binary or ternary oxides and pnictides, a special class of degenerate but gapped metals has been noticed. Their presumed electronic configurations show the Fermi level inside the conduction band or valence band, yet there is an “internal band gap” between the principal band edges. The significance of this electronic configuration is that it might be unstable toward the formation of states inside the internal band gap when the formation of such states costs less energy than the energy gained by transferring carriers from the conduction band to these lower energy acceptor states, changing the original (false) metal to an insulator. The analogous process also exists for degenerate but gapped metals with the Fermi level inside the valence band, where the energy gain is defined by transfer of electrons from the donor level to the unoccupied part of the valence band. We focus here on the fact that numerous electronic structure methodologies have overlooked some physical factors that could stabilize the insulating alternative, predicting instead false metals that do not really exist (note that this is in general not a physical phase transition, but a correction of a previous error in theory that led to a false prediction of a metal). Such errors include: (i) ignoring spin symmetry breaking, such as disallowing magnetic spin ordering in CuBi2O4 or disallowing the formation of polymorphous spin networks in paramagnetic LaTiO 3 and YTiO 3 ; (ii) ignoring structural symmetry breaking, e.g., not enabling energy-lowering bond disproportionation (Li-doped TiO 2 , SrBiO 3 , and rare-earth nickelates), or not exploring pseudo-Jahn–Teller-like distortions in LaMnO 3 , or disallowing spontaneous formation of ordered vacancy compounds in Ba 4 As 3 and Ag 3 Al 22 O 34 ; and (iii) ignoring spin–orbit coupling forcing false metallic states in CaIrO 3 and Sr 2 IrO 4 . The distinction between false metals vs real insulators is important because (a) predicting theoretically that a given compound is metal even though it is found to be an insulator often creates the temptation to invoke high order novel physical effects (such as correlation in d-electron Mott insulators) to explain what was in effect caused by a more mundane artifact in a lower-level mean-field band theory, (b) recent prediction of exotic physical effects such as topological semimetals were unfortunately based on the above compounds that were misconstrued by theory to be metal, but are now recognized to be stable insulators not hosting exotic effects, and (c) practical technological applications based on stable degenerate but gapped metals such as transparent conductors or electrides for catalysis must rely on the systematically correct and reliable theoretical classification of metals vs insulators.

36 MATERIALS SCIENCE↗

DOE OSTI2024

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗

DOE OSTI2020

FOFB-compatible AC Local Bump as a Potential New Operations Mode for NSLS-II

AC local bumps of the beam orbit developed at NSLS-II are successfully used for accelerator physics studies. Recently, AC bumps localized at light-generating insertion devices (ID) are considered by NSLS-II beamline scientists as a possible user operation mode. The AC perturbation of the X-ray beam in a controllable way will provide a possibility to investigate the effects of the source size and temporal evolution on the coherence of the photon beam. It also can be used to average out the spatial non-uniformity of the beam intensity caused by the beamline optics. Before the implementation of the AC orbit bumps into user operations, we must investigate if the electron beam perturbation affects the other beamlines. A proof-of-principle experiment was carried out: an AC bump was created and well localized in the CSX and/or FXI beamline. Transparency of this AC bump to other beamlines has been studied, the results are discussed.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Rigor and Reproducibility in Electrocatalysis: Best Practices for Operando Studies

Operando measurements have rapidly expanded the scope of electrocatalysis by enabling direct observation of catalytic interfaces under working conditions and by linking structural, compositional, and spectroscopic observables to activity and selectivity. However, the growth of operando methods has outpaced the adoption of broadly shared experimental standards, creating persistent challenges in reproducibility, interpretation, and comparison across laboratories and platforms. This perspective synthesizes discussions from the 2025 National Science Foundation Workshop on Rigor and Reproducibility in Electrocatalysis and outlines a practical framework for the rigorous use of operando measurements in electrocatalysis. We highlight three recurring needs: careful implementation of complex methods to avoid overinterpretation; recognition that (subtle) differences in reactor architecture, hydrodynamics, and electrical boundary conditions can alter apparent kinetics and selectivity; and transparent reporting standards that enable meaningful cross-comparison without constraining measurement-specific cell innovation. Focusing on widely used techniques (including X-ray and vibrational spectroscopies, mass spectrometry, and electron microscopy), we discuss technique-specific pitfalls, cross-validation strategies, and recurring platform-agnostic considerations such as mass transport, current distribution, temporal-resolution mismatches, and catalyst evolution. This Perspective aims to strengthen the mechanistic inference and improve the reproducibility, comparability, and predictive value of operando electrocatalysis research.

X-ray absorption spectroscopy↗

DOE OSTI2021

Higher Throughput, Lower Cost Processing of Flexible Perovskite Solar Cells by Photonic Curing

The objectives of this SETO project are to explore whether photonic curing can be used to perform annealing in perovskite solar cell (PSC) fabrication, and if so, whether it can enable high-throughput PSC manufacturing. The successful outcome of the project will reduce manufacturing cost towards realizing the SETO goal of the Levelized cost of electricity (LCOE) $0.03/kWh by 2030. The project is a collaboration between Hsu’s group at the University of Texas at Dallas (UTD) and NovaCentrix, an Austin TX based company that pioneered the PulseForge® photonic curing tools and has expertise in applying this technology to printed electronics. Thin-film synthesis typically involves a thermal annealing step to convert from precursors to final material phases, to obtain the desired crystalline phase, or to improve materials structural or electrical properties. However, thermal annealing typically requires high temperatures that are incompatible with inexpensive plastic substrates and annealing times lasting tens-to-hundreds of minutes, making it incompatible with roll-to-roll (R2R) manufacturing at a desirable web speed. Photonic curing uses a flash Xe lamp to deliver short (20 µs to 100 ms) but high intensity (up to 50 kW/cm 2 ) pulses of broadband light (200 – 1500 nm) to the sample. It has been successfully applied to sinter printed metal nanoparticle inks into conductive patterns. This project aimed to extend the applications of photonic curing to convert halide perovskite films and transparent metal oxide transport layers. Despite the interruption by COVID-19, we have achieved significant accomplishments to establish photonic curing as a viable technology for the high-throughput manufacturing of PSCs. (1) We demonstrated that photonic curing can convert both metal oxide transport layer and halide perovskite absorber in the PSCs and successfully made flexible PSCs on Corning Willow glass® (WG)/ indium tin oxide (ITO) substrates without any thermal annealing steps. These photonically cured devices achieve performance comparable to conventional thermally annealed devices but were fabricated with a total processing time reduced by six orders of magnitude. We also show that photonic curing can achieve desirable web speed (up to 26 m/min) and large-area uniformity. (2) By establishing photonic curing processing phase spaces for the perovskite, we show that the longer pulses are more forgiving in small variation in the photonic curing conditions, making it more suitable for R2R manufacturing. (3) Our results clearly illustrated the importance of improving mechanical and optical properties of transparent electrodes on flexible substrates. (4) We also performed fundamental studies that elucidate the interactions between perovskite absorber and metal oxide transport layer that can undermine the PSC stability. Five refereed journal papers in top journals (ACS Energy Letters, npj Flexible Electronics, ACS Applied Energy Materials, Materials Advances, and Frontiers in Energy Research), one conference proceeding (PVSC-47), six conference presentations (PVSC and Materials Research Society meetings), and a Ph.D. dissertation (Trey B. Daunis) were produced under this project. Energy Materials Corporation (EMC) has forecast that with a 1.5 m wide web moving at a web speed of 30 m/min, R2R processing of PSC could provide up to 4 GW/year for a single R2R assembly line. Replacing thermal annealing with photonic curing, as demonstrated by the accomplishments of this project, is necessary to realize such an energy production goal.

14 SOLAR ENERGY↗

DOE OSTI2024

A Free-Standing Boron-Doped Diamond Grid Electrode for Fundamental Spectroelectrochemistry

Spectroelectrochemistry (SEC) is a powerful technique that enables a variety of redox properties to be studied, including formal potential (E o ), thermodynamic values (ΔG, ΔH, ΔS), diffusion coefficient (D), electron transfer stoichiometry (n), and others. SEC requires an electrode which light can pass through while maintaining sufficient electrical conductivity. This has been traditionally composed of metal or metal oxide films atop transparent substrates like glass, quartz, or metallic mesh. Robust electrode materials like boron-doped diamond (BDD) could help expand the environments in which SEC can be performed, but most designs are limited to thin films (~100–200 nm) on transparent substrates less resilient than free-standing BDD. Here, this work presents a free-standing BDD grid electrode (G-BDD) for fundamental SEC measurements, using the well-characterized Fe(CN) 6 3–/4– redox couple as proof-of-concept. With a combination of cyclic voltammetry (CV), thin-layer SEC, and chronoabsorptometry, several of the redox properties mentioned above were calculated and compared. For E o' , n, and D, similar results were obtained when comparing the CV [E o' = +0.279 (±0.002) V vs Ag/AgCl; n = 0.97; D = 4.1 × 10 –6 cm 2 ·s –1 ] and SEC [E o' = +0.278 (±0.001) V vs Ag/AgCl; n = 0.91; D = 5.2 × 10 –6 cm 2 ·s –1 ] techniques. Both values align with what has been previously reported. To calculate D from the SEC data, modification of the classical equation used in chronoabsorptometry was required to accommodate the G-BDD electrode geometry. Overall, this work expands on the applicability of SEC techniques and BDD as a versatile electrode material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Effects of composition and growth parameters on phase formation in multicomponent aluminum garnet crystals

The effects of composition on the phase formation of multicomponent garnet crystals grown via directional solidification by the micro-pulling-down method are studied. A relatively wide range of rare-earth (RE) average ionic radii (AIR) is explored by formulating ten compositions from the system (Lu,Y,Ho,Dy,Tb,Gd) 3 Al 5 O 12 . Crystals were grown at either 0.05 or 0.20 mm min -1 . The hypothesis is that multicomponent compounds with large AIR will form secondary phases as the single-RE aluminum garnets formed by larger Tb 3+ or Gd 3+ ; this will result in crystals of poor optical quality. Crystals with large AIR have a central opaque region in optical microscopy images, which is responsible for their reduced transparency compared to crystals with small AIR. Slow pulling rates suppress the formation of the opaque region in crystals with intermediate AIR. Powder and single-crystal X-ray diffraction and electron probe microanalysis results indicate that the opaque region is a perovskite phase. Scanning electron microscopy and energy dispersive spectroscopy measurements reveal eutectic inclusions at the outer surface of the crystals. Finally, the concentration of the eutectic inclusions increases with increasing AIR.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Tailored Graphene Micropatterns by Wafer-Scale Direct Transfer for Flexible Chemical Sensor Platform

2D materials, such as graphene, exhibit great potential as functional materials for numerous novel applications due to their excellent properties. The grafting of conventional micropatterning techniques on new types of electronic devices is required to fully utilize the unique nature of graphene. However, the conventional lithography and polymer-supported transfer methods often induce the contamination and damage of the graphene surface due to polymer residues and harsh wet-transfer conditions. In this work, a novel strategy to obtain micropatterned graphene on polymer substrates using a direct curing process is demonstrated. Employing this method, entirely flexible, transparent, well-defined self-activated graphene sensor arrays, capable of gas discrimination without external heating, are fabricated on 4 in. wafer-scale substrates. Finite element method simulations show the potential of this patterning technique to maximize the performance of the sensor devices when the active channels of the 2D material are suspended and nanoscaled. This study contributes considerably to the development of flexible functional electronic devices based on 2D materials.

2D materials, Graphene, Microscale patterning, Che↗

DOE OSTI2025

Nuclear fragmentation at the future electron-ion collider

We explore the potential of conducting low-energy nuclear physics studies, including nuclear structure and decay, at the future Electron-Ion Collider (EIC) at Brookhaven. By comparing the standard theory of electron-nucleus scattering with the equivalent photon method applied to Ultraperipheral Collisions (UPC) at the Large Hadron Collider (LHC) at CERN. In the limit of extremely high beam energies and small energy transfers, very transparent equations emerge. We apply these equations to analyze nuclear fragmentation in UPCs at the LHC and 𝑒𝐴 scattering at the EIC, demonstrating that the EIC could facilitate unique photonuclear physics studies. Furthermore, we have also shown that the fragmentation cross-sections at the EIC are about 1,000 times smaller than those at the LHC. At the LHC, the fragmentation of uranium nuclei displays characteristic double-hump mass distributions from fission events, while at the EIC, fragmentation is dominated by neutron emission and fewer few fission products, about 10,000 smaller number of events.

Bertulani, Carlos A. [East Texas A&M University, C↗

DOE OSTI2020

Ultra-thin passivation layers in Cu(In,Ga)Se 2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping

In the search for highly transparent and non-toxic alternative front layers replacing state-of-the-art CdS in Cu(In,Ga)Se 2 thin-film solar cells, alternatives rarely exceed reference devices in terms of efficiency. Full-area ultra-thin aluminium oxide tunnelling layers do not require any contact patterning and thus overcome the main drawback of insulating passivation layers. Even a few monolayers of aluminium oxide can be deposited in a controlled manner by atomic layer deposition, they show excellent interface passivation properties, low absorption, and suitable current transport characteristics on test devices. Depositing a ZnO-based transparent front contact, however, results in extremely poor solar cell performance. The issue is not necessarily a low quality of the alternative front layer, but rather the intricate relation between front layer processing and electronic bulk properties in the absorber layer. We identify three challenges critical for the development of novel front passivation approaches:(i) both Cd and Zn impurities beneficially reduce the high native net dopant concentration in the space charge region, (ii) sputter deposition of ZnO damages the passivation layer resulting in increased interface recombination, (iii) thermal treatments of devices with ZnO layer result in substantial Zn diffusion, which can penetrate the full absorber thickness already at moderate temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Transition metal elements as donor dopants in CdO

CdO has been shown to achieve a high electron concentration N (> 10 21 cm -3 ) and at the same time a high mobility μ (> 100cm 2 /V s) when doped with conventional shallow dopants (In or Ga), and consequently making it a transparent conducting oxide with very low resistivity ρ <10 -4 $\Omega$ cm. In this work, the properties of CdO thin films doped with a series of transition metal elements (CdO:TM) with partially filled 3d and 4d shells, including Sc, Ti, V, Cr, Fe, Y, Mo, and W, were investigated. We find that doping with these TM elements can effectively increase the N in CdO to a maximum N (N max ) of ~(7-12)×10 20 cm -3 with a dopant concentration x max of 4-7 %. However, unlike CdO:In, the μ of CdO:TM films drops rapidly from > 100 to < 10cm 2 /Vs as the dopant concentration x increases, so that they can only achieve a minimum ρ of ~ (1-2) × 10 -4 $\Omega$ cm, ~ a factor of 2-3 higher than that in CdO:In. As a result, free-carrier absorption and plasma reflection effects limit their optical transparency to <1200 nm. For most 3d TM dopants, a qualitatively higher d-donor level E d,donor gives rise to higher E F,max or a higher N max . Although at low x, the optical band gap E opt of CdO:TM follows the calculated values due to free-carrier effects, as x increases, E opt values are significantly higher than the calculated values. This is believed to be an effect of the anticrossing interaction of the localized d-levels and the extended CdO conduction-band (CB) states, giving rise to a lower occupied E - and an upper unoccupied E + subband. In conclusion, the restructured CBs have much flatter dispersion, which also results in a much higher effective mass $m^{\star}_{e}$, hence it can also explain the much lower μ of CdO:TM films with high N.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Ruling Out the Onset of Color Transparency up to Q2 = 14.2 GeV2 in Quasielastic 12C(e,e'p) Scattering

Color Transparency (CT) is a prediction of QCD that at high momentum transfer Q2, a system of quarks which would normally interact strongly with nuclear matter could form a small color-neutral object whose compact transverse size would be maintained for some distance, passing through the nucleus undisturbed. A clear signature of CT would be a dramatic rise in nuclear transparency T with increasing Q2. CT emerges as a deviation from Glauber multiple scattering theory, which predicts constant T. While a rise in nuclear transparency would provide an unequivocal validation of QCD factorization theorems, the complex nature of nuclear interactions renders its observation difficult to predict. The E12-06-107 experiment at JLab measured T in quasielastic electron-proton scattering with carbon-12 and liquid hydrogen targets, for Q2 between 8.0 and 14.2 GeV2 , a range over which models of CT predicted that T might differ appreciably from Glauber calculations. Supported in part by US DOE grant DE-FG02-03ER41240.

Matter, John↗

DOE OSTI2021

One-dimensional edge contact to encapsulated MoS 2 with a superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS 2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS 2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS 2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.

2D materials↗

DOE OSTI2021

Flexible and high-performance electrochromic devices enabled by self-assembled 2D TiO 2 /MXene heterostructures

Transition metal oxides (TMOs) are promising electrochromic (EC) materials for applications such as smart windows and displays, yet the challenge still exists to achieve good flexibility, high coloration efficiency and fast response simultaneously. MXenes (e.g. Ti 3 C 2 T x ) and their derived TMOs (e.g. 2D TiO 2 ) are good candidates for high-performance and flexible EC devices because of their 2D nature and the possibility of assembling them into loosely networked structures. Here we demonstrate flexible, fast, and high-coloration-efficiency EC devices based on self-assembled 2D TiO 2 /Ti 3 C 2 T x heterostructures, with the Ti 3 C 2 T x layer as the transparent electrode, and the 2D TiO 2 layer as the EC layer. Benefiting from the well-balanced porosity and connectivity of these assembled nanometer-thick heterostructures, they present fast and efficient ion and electron transport, as well as superior mechanical and electrochemical stability. We further demonstrate large-area flexible devices which could potentially be integrated onto curved and flexible surfaces for future ubiquitous electronics.

36 MATERIALS SCIENCE↗