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At least 163 records · Page 9

Superconducting gap of H 3 S measured by tunnelling spectroscopy

Several hydrogen-rich superconductors have been found to show unprecedentedly high critical temperatures, stimulating investigations into the nature of the superconductivity in these materials. Although their macroscopic superconducting properties are established, microscopic insights into the pairing mechanism remains unclear. Here we characterize the superconducting gap structure in the high-temperature superconductor H 3 S and its deuterium counterpart D 3 S by performing tunnelling spectroscopy measurements. The tunnelling spectra reveal that H 3 S and D 3 S both have a fully gapped structure, which could be well described by a single s-wave Dynes model, with gap values 2Δ of approximately 60 meV and 44 meV, respectively. Furthermore, we observed gap features of another likely H-depleted H x S superconducting phase in a poorly synthesized hydrogen sulfide sample. Our work offers direct experimental evidence for superconductivity in the hydrogen-rich superconductor H 3 S from a microscopic perspective. It validates the phonon-mediated mechanism of superconducting pairing and provides a foundation for further understanding the origins of high-temperature superconductivity in hydrogen-rich compounds.

36 MATERIALS SCIENCE↗

Easy axis anisotropy creating high contrast magnetic zones on magnetic tunnel junctions based molecular spintronics devices (MTJMSD)

Abstract Magnetic tunnel junction-based molecular spintronics device (MTJMSD) may enable novel magnetic metamaterials by chemically bonding magnetic molecules and ferromagnets (FM) with a vast range of magnetic anisotropy. MTJMSD have experimentally shown intriguing microscopic phenomenon such as the development of highly contrasting magnetic phases on a ferromagnetic electrode at room temperature. This paper focuses on Monte Carlo Simulations (MCS) on MTJMSD to understand the potential mechanism and explore fundamental knowledge about the impact of magnetic anisotropy. The selection of MCS is based on our prior study showing the potential of MCS in explaining experimental results (Tyagi et al. in Nanotechnology 26:305602, 2015). In this paper, MCS is carried out on the 3D Heisenberg model of cross-junction-shaped MTJMSDs. Our research represents the experimentally studied cross-junction-shaped MTJMSD where paramagnetic molecules are covalently bonded between two FM electrodes along the exposed side edges of the magnetic tunnel junction (MTJ). We have studied atomistic MTJMSDs properties by simulating a wide range of easy-axis anisotropy for the case of experimentally observed predominant molecule-induced strong antiferromagnetic coupling. Our study focused on understanding the effect of anisotropy of the FM electrodes on the overall MTJMSDs at various temperatures. This study shows that the multiple domains of opposite spins start to appear on an FM electrode as the easy-axis anisotropy increases. Interestingly, MCS results resembled the experimentally observed highly contrasted magnetic zones on the ferromagnetic electrodes of MTJMSD. The magnetic phases with starkly different spins were observed around the molecular junction on the FM electrode with high anisotropy.

36 MATERIALS SCIENCE↗

Investigating the effect of electric fields on lead halide perovskites by scanning tunneling microscopy

Lead halide perovskites have emerged as promising absorber materials over the last decade to increase the efficiency of photovoltaics beyond its current limits. However, to further optimize the performance of perovskites, more detailed studies need to be performed which allow for the correlation of film morphology and local electronic properties at the nanoscale. In this paper, we present a scanning tunneling microscopy (STM) approach to probe the effect of an applied electric field of a methylammonium formamidinium lead triiodide perovskite thin film on the film response by current-voltage spectroscopy, current imaging tunneling spectroscopy, differential conductance mapping and X-ray absorption spectroscopy (XAS) by means of synchrotron X-ray STM (SX-STM). We find a strong correlation between the measurement conditions and the obtained current-voltage characteristics when imaging under opposite applied bias polarities. In particular, we find similarities to already observed poling effects for perovskites which result in either a positively or negatively charged interface due to ion and vacancy migration. Our results provide insight into the influence of measurement conditions such as bias polarity on the performance assessment of perovskite thin films by STM.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Simplified feedback control system for scanning tunneling microscopy

A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few Å. Often, the tunneling current between the tip and the sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here, we discuss another approach using a computer and data acquisition through the universal serial bus port. We find that it allows successful ultralow noise studies of surfaces at cryogenic temperatures. We show results on different compounds including a type II Weyl semimetal (WTe2), a quasi-two-dimensional dichalcogenide superconductor (2H–NbSe2), a magnetic Weyl semimetal (Co3Sn2S2), and an iron pnictide superconductor (FeSe).

Martín-Vega, Francisco (ORCID:0000000333177833)↗

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗

A Josephson junction with h -BN tunnel barrier: observation of low critical current noise

Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h-BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 /h-BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h-BN layer. Furthermore, we characterized the superconducting current and voltage (I–V) relationships and Fraunhofer pattern of the NbSe 2 /h-BN/Nb junction. Notably, we demonstrated the critical current noise (1/f noise power) in the h-BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h-BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in Co Fe B / Mg O -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

Safeer, C. K. (ORCID:0000000323969730)↗

Kuramoto synchronization of quantum tunneling polarons for describing the dynamic structure in cuprate superconductors

A major open topic in cuprates is the interplay between the lattice and electronic dynamics and the importance of their coupling to the mechanism of high-temperature superconductivity (HTSC). As evidenced by extended x-ray absorption fine structure (EXAFS) experiments, anharmonic structural effects are correlated with the charge dynamics and the transition to a superconducting phase in different HTSC compounds. Here, in this paper, we describe how structural anharmonic effects can be coupled to electronic and lattice dynamics in cuprate systems by performing the exact diagonalization of a prototype anharmonic many-body Hamiltonian on a relevant 6-atom cluster and show that the EXAFS results can be understood as a Kuramoto synchronization transition between coupled internal quantum tunneling of polarons associated with the two-site distribution of the copper–apical oxygen (Cu-O ap ) pair in the dynamic structure. The transition is driven by the anharmonicity of the lattice vibrations and promotes the pumping of charge, initially stored at the apical oxygen reservoirs, into the copper-oxide plane. Simultaneously, a finite projection of the internal quantum tunneling polaron extends to the copper–planar oxygen (Cu-O pl ) pair. All these findings allow an interpretation based on an effective quantum-mechanical triple-well potential associated with the oxygen sites of the 6-atom cluster, which accurately represents the phase synchronization of apical oxygens and lattice-assisted charge transfer to the CuO 2 plane.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hydrogen and deuterium tunneling in niobium

We use density functional methods to identify the atomic configurations of H and D atoms trapped by O impurities embedded in bulk Nb. The O atoms are located at the octahedral position in the Nb body-centered cubic (BCC) lattice, and H (D) atoms tunnel between two degenerate tetrahedral sites separated by a mirror plane. Using nudged elastic band (NEB) methods, we calculate the double-well potential for O-H and O-D impurities and the wave functions and tunnel splittings for H and D atoms. Our results agree with those obtained from analysis of heat capacity and neutron scattering measurements on Nb with low concentrations of O-H and O-D.

density functional theory↗

Toward quantum tunneling from excited states: Recovering imaginary-time instantons from a real-time analysis

We revisit the path integral description of quantum tunneling and its generalization to excited states. For clarity, we focus on the simple toy model of a point particle in a double-well potential, for which we perform all steps explicitly. Instead of performing the familiar Wick rotation from physical to imaginary time—which is inconsistent with the requisite boundary conditions when treating tunneling from excited states—we regularize the path integral by adding an infinitesimal complex contribution to the Hamiltonian, while keeping time strictly real. We find that this gives rise to a complex stationary-phase solution, in agreement with recent insights from Picard-Lefshetz theory. We then show that there exists a class of analytic solutions for the corresponding equations of motion, which can be made to match the appropriate boundary conditions in the physically relevant limits of a vanishing regulator and an infinite physical time. We provide a detailed discussion of this nontrivial limit. We find that, for systems without an explicit time-dependence, our approach reproduces the picture of an instantonlike solution defined on a finite Euclidean-time interval. Lastly, we discuss the generalization of our approach to broader classes of systems, for which it serves as a reliable framework for high-precision calculations. Published by the American Physical Society 2025

Steingasser, Thomas (ORCID:0000000217262117)↗

Tunneling spectroscopy in superconducting circuit lattices

We demonstrate tunneling spectroscopy of synthetic quantum matter in superconducting circuit lattices. We measure site-resolved excitation spectra by coupling the lattice to engineered driven-dissipative particle baths that serve as local tunneling probes. Using incoherent particle source and drain, we independently extract quasiparticle and quasihole spectra and reconstruct the spatial structure of collective excitations. We perform spectroscopy of a strongly interacting Bose-Hubbard lattice to measure changes in energy spectra for superfluid and Mott-insulator states at different densities and observe the effects of three-body interactions. Our results provide a toolset for characterizing many-body states in analog quantum simulators. Published by the American Physical Society 2025

Du, Botao (ORCID:0009000363386414)↗

Exploiting Fixed Charge to Control Schottky Barrier Height in Si|Al 2 O 3 |MoO x – based Tunnel Diodes

The insertion of a tunneling atomic layer deposited (ALD) Al 2 O 3 film between MoO x and p-type Si has been studied to investigate Schottky barrier height tunability with varied negative fixed charge density. This work seeks to increase the hole-selectivity of MoO x -based contacts through manipulation of interface fixed charge. Fixed charge density and interface trap state densities are determined as a function of alumina processing conditions in metal-oxide-semiconductor capacitors (MOSCAPs). Schottky barrier heights were determined from Mott-Schottky analysis of tunnel diodes. An alumina deposition temperature of 80°C and post-deposition annealing at 425°C yielded the highest magnitude of negative fixed charge density (-3.5 × 10 12 q . cm –2 ). High deposition temperature and/or post-deposition annealing produced the lowest interface trap state density (1 × 10 12 eV -1 . cm –2 ). On p-type silicon, Schottky barrier height minimization was not clearly correlated with increasing fixed charge density. However, on n-type silicon, a significant increase in Schottky barrier height was evident (~0.8 eV to > 1 eV) and is attributed to the large negative fixed charge. Here, the findings from this work indicate that Schottky barrier height in carrier selective contacts can be tuned by electrostatic engineering of the SiO x |Al 2 O 3 interface.

aluminum oxide↗

Aluminum-Based Superconducting Tunnel Junction Sensors for Nuclear Recoil Spectroscopy

The BeEST experiment is searching for sub-MeV sterile neutrinos by measuring nuclear recoil energies from the decay of 7 Be implanted into superconducting tunnel junction (STJ) sensors. The recoil spectra are affected by interactions between the radioactive implants and the sensor materials. We are therefore developing aluminum-based STJs (Al-STJs) as an alternative to existing tantalum devices (Ta-STJs) to investigate how to separate material effects in the recoil spectrum from potential signatures of physics beyond the Standard Model. Three iterations of Al-STJs were fabricated. The first had electrode thicknesses similar to existing Ta-STJs. They had low responsivity and reduced resolution, but were used successfully to measure 7 Be nuclear recoil spectra. The second iteration had STJs suspended on thin SiN membranes by backside etching. These devices had low leakage current, but also low yield. The final iteration was not backside etched, and the Al-STJs had thinner electrodes and thinner tunnel barriers to increase signal amplitudes. These devices achieved 2.96 eV FWHM energy resolution at 50 eV using a pulsed 355 nm (~3.5 eV) laser. These results establish Al-STJs as viable detectors for systematic material studies in the BeEST experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Temperature-dependent dielectric function of tantalum nitride formed by atomic layer deposition for tunnel barriers in Josephson junctions

Here, we report the dielectric functions of insulating tantalum nitride (TaN) films deposited by atomic layer deposition (ALD) on 300 mm Si/SiO 2 substrates to evaluate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJs) for superconducting quantum circuits. Temperature-dependent ellipsometric angles were measured for ALD TaN films with nominal thicknesses of 13 and 25 nm at an incidence angle of 70°, over photon energy ranges of 0.03–0.7 eV (80–300 K) and 0.5–6.5 eV (80–600 K). These data were used to develop a dispersion model for insulating ALD TaN that incorporates a Tauc–Lorentz oscillator with an optical bandgap of 1.5–1.8 eV to describe interband transitions. The extracted dielectric function shows insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. In particular, ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, consistent with the insulating behavior required for a JJ tunnel barrier. Results from transmission electron microscopy (including selected area electron diffraction) and x-ray diffraction are also discussed. Sputter depth-profile x-ray photoelectron spectroscopy shows an N/Ta ratio of ∼1.2 throughout the film. The lower bandgap, low roughness, and thermal stability of ALD TaN compared to AlO x suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, enabling improved thickness and composition control, reduced topography, and resistance to aging.

36 MATERIALS SCIENCE↗

Ultrafast method for scanning tunneling spectroscopy

A scanning tunneling microscope (STM) combines unique capabilities in imaging and spectroscopy with atomic precision, and it can obtain energy-resolved spectroscopic data with atomic resolution. In this paper, we utilize a recently proposed modification to the STM feedback control loop to acquire high quality d 2 I/dV 2 images. We have developed a constant differential conductance imaging method by closing the STM feedback loop with a high precision dI/dV measurement. In this mode, the tip’s vertical position is adjusted so as to keep the differential conductance constant during raster scanning of the surface. Based on this imaging mode, we propose a new technique to acquire fast and reliable scanning tunneling spectroscopy (STS) data simultaneously with the imaging.

47 OTHER INSTRUMENTATION↗

Atomic precision imaging with an on-chip scanning tunneling microscope integrated into a commercial ultrahigh vacuum STM system

In this article, we replace the Z axis of the piezotube of a conventional Ultrahigh-Vacuum (UHV) Scanning Tunneling Microscope (STM) with a one-degree-of-freedom Microelectromechanical-System (MEMS) nanopositioner. As a result, a hybrid system is realized in which motions in the XY plane are carried out by the piezotube, while the MEMS device performs the Z-axis positioning with a smaller footprint and higher sensitivity. With the proposed system and a feedback loop, STM imaging is conducted on an H-passivated Si (100)-2×1 sample in a UHV condition, demonstrating that this on-chip STM is conducive to atomic precision scanning tunneling microscopy.

Engineering↗

Spin-filter tunneling detection of antiferromagnetic resonance with electrically tunable damping

Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic dynamics have utilized large, millimeter-scale bulk crystals. In this work, we demonstrate direct electrical detection of antiferromagnetic resonance in structures on the few-micrometer scale using spin-filter tunneling in platinum ditelluride (PtTe 2 )/bilayer chromium sulfide bromide (CrSBr)/graphite junctions in which the tunnel barrier is the van der Waals antiferromagnet CrSBr. This sample geometry allows not only efficient detection but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe 2 electrode. The ability to efficiently detect and control antiferromagnetic resonance enables detailed studies of the physics governing these high-frequency dynamics.

Cham, Thow Min Jerald [Cornell University, Ithaca,↗

All-optical sampling of few-cycle infrared pulses using tunneling in a solid

Recent developments in ultrafast laser technology have resulted in novel few-cycle sources in the mid-infrared. Accurately characterizing the time-dependent intensities and electric field waveforms of such laser pulses is essential to their applications in strong-field physics and attosecond pulse generation, but this remains a challenge. Recently, it was shown that tunnel ionization can provide an ultrafast temporal “gate” for characterizing high-energy few-cycle laser waveforms capable of ionizing air. Here, we show that tunneling and multiphoton excitation in a dielectric solid can provide a means to measure lower-energy and longer-wavelength pulses, and we apply the technique to characterize microjoule-level near- and mid-infrared pulses. The method lends itself to both all-optical and on-chip detection of laser waveforms, as well as single-shot detection geometries.

74 ATOMIC AND MOLECULAR PHYSICS↗