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At least 1,621 records · Page 90

Stable Symmetry-Protected Topological Phases in Systems with Heralded Noise

Here, we present a family of local quantum channels whose steady-states exhibit stable mixed-state symmetry-protected topological (SPT) order. Motivated by recent experimental progress on "erasure conversion" techniques that allow one to identify ($\textit{herald}$) decoherence processes, we consider open systems with biased erasure noise, which leads to strongly symmetric heralded errors. We utilize this heralding to construct a local correction protocol that effectively confines errors into short-ranged pairs in the steady-state. Using a combination of numerical simulations and mean-field analysis, we show that our protocol stabilizes SPT order against a sufficiently low rate of decoherence. As the rate of heralded noise increases, SPT order is eventually lost through a directed percolation transition. We further find that while introducing unheralded errors destroys SPT order in the limit of long length- and time-scales, the correction protocol is sufficient for ensuring that local SPT order persists, with a correlation length that diverges as $\xi \sim (1-f_e)^{-1/2}$, where $f_e$ is the fraction of errors that are heralded.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Periodic chiral magnetic domains in single-crystal nickel nanowires

We report here on experimental and computational investigations of the domain structure of single-crystal Ni nanowires (NWs). The ${\sim}200\times{}200\times{}8000\mathrm{n}{\mathrm{m}}^{3}$ Ni NWs were grown by a thermal chemical vapor deposition technique that results in single-crystal structures. Magnetoresistance measurements of individual NWs suggest the average magnetization points largely off the NW long axis at zero field. X-ray photoemission electron microscopy images obtained at room temperature show a well-defined periodic magnetization pattern along the surface of the nanowires with a period of ${{\lambda}}_{\mathrm{avg}}=239\pm{}37\mathrm{nm}$. Finite element micromagnetic simulations reveal that when the material parameters of the modeled system match those of nickel crystal at $T=10\mathrm{K}$, an oscillatory magnetization configuration with a period closely matching experimental observation (${\lambda}=222\mathrm{nm}$) is obtainable at remanence. This magnetization configuration involves a periodic array of alternating chirality vortex domains distributed along the length of the NW. Vortex formation is attributable to the relatively high cubic anisotropy of the single crystal Ni NW system at $T=10\mathrm{K}$ and its reduced structural dimensions. The periodic alternating chirality vortex state is a topologically protected metastable state, analogous to an array of 360° domain walls in a thin strip. Simulations show that other remanent states are also possible, depending on the field history. At room temperature ($T=273\mathrm{K}$), simulations show vortices are no longer stable due to the expected reduced cubic anisotropy of the system, suggesting a disparity between the fabricated and modeled nanowires. Negative uniaxial anisotropy and magnetoelastic effects in the presence of compressive biaxial strain are shown to promote and restore formation of vortices at room temperature.

36 MATERIALS SCIENCE↗

Open-Source Steady-State Models for Integration of Wave Energy Converter into Microgrids

This paper proposes a software framework, WEC-Grid, for integrating wave energy converters (WECs) into power flow software, such as Siemens PSS®E, to aid the integration of alternative energy sources into Microgrids. While integrating alternative sources such as WECs presents specific challenges such as cost, power quality, and power variability, wave energy is a promising renewable energy resource. Evaluating the integration of WECs into the power grid is a complex and nuanced problem that requires seamless communication between a WEC model and power flow software. The presented WEC-Grid software framework bridges and extends the functionality of WEC-Sim, an open-source WEC modeling package for MATLAB, through a wave-to-wire (W2W) electro-mechanical power conversion and processing model. WEC-Grid acts as a software wrapper, handler, and communication layer between the W2W modeler and power flow software. The software is designed to represent each grid system as a class object, allowing power system operators to perform power system duties such as contingency planning and dispatch operations. The integration of WECs with PSS®E’s power flow calculations workflow is demonstrated with an IEEE RTS case study.

16 TIDAL AND WAVE POWER↗

Minimizing Energy Consumption from Connected Signalized Intersections by Reinforcement Learning

Explicit energy minimization objectives are often discouraged in signal optimization algorithms due to its negative impact on mobility performance. One potential direction to solve this problem is to provide a balanced objective function to achieve desired mobility with minimized energy consumption. This research developed a reinforcement learning (RL) based control with reward functions considering energy and mobility in a joint manner-a penalty function is introduced for number of stops. Further, we proposed a clustering-based technique to make the state-space finite which is critical for a tractable implementation of the RL algorithm. We implemented the algorithm in a calibrated NG-SIM network within a traffic micro-simulator-PTV VISSIM. With sole focus on energy, we report 47% reduction in energy consumption when compared with existing signal control schemes, however causing a 65.6% increase in system travel time. In contrast, the control strategy focusing on energy minimization with penalty for stops yields 6.7% reduction in energy consumption with 27% increase in system travel time. The developed RL algorithm with a flexible penalty function in the reward will achieve desired energy goals for a network of signalized intersections without compromising on the mobility performance.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

High-voltage regrown nonpolar m -plane vertical p-n diodes: A step toward future selective-area-doped power switches

Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×10 17 cm -3 , which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm 2 at 300 A/cm 2 , and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×10 17 cm -3 , 8×10 17 cm -3 , and 1×10 19 cm -3 , respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A Cryogenic readout integrated circuit with analog pile-up and in-Pixel ADC for high frame rate Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$ 60$\mu$m footprint. SPROCKET2 is intended to be heterogeneously integrated with a pixelated Skipper CCD-in-CMOS sensor, such that one readout pixel is connected to a multiplexed array of 16 active image sensor pixels, to match their spatial geometry. Our design benefits from the Skipper CCD-in-CMOS sensor's non-destructive readout capability to achieve exceptionally low noise through multi-sampling and averaging while optimizing for total power consumption. The pixel readout utilizes correlated double sampling to minimize 1/f noise and includes "pile-up" of ten successive samples in the analog domain before digitizing at a rate of 66.7 ksps. Measurement results of in-pixel serial SAR ADC show DNL and INL of ~0. 44 LSB and 0.58 LBS respectively. A large area array of 20,000 SPROCKET2 ADC pixels (multiplexed 1:16 to 320,000 sensor pixels) is currently under test. By reading out data over a 10 Gbps optical link, this pixel design enables a frame rate of $\sim$ 4 kfps for large sensing areas with minimal sensing deadtime. In the highest gain mode, the pixelated ADC has an input-referred resolution of 10$\mu$V with a simulated power consumption of 50$\mu$W. The pixel operates with constant current draw to minimize power-rail crosstalk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

First Soft X-ray Quantum Efficiency Measurements on Microwave Annealed Thin-Entrance Window Sensors

Free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250eV-1.5KeV. In addition, there are other light sources such as the FERMI, EuXFEL, and FLASH XFELs, as well as numerous synchrotrons such as the ALS, where soft x-ray science would benefit from detectors with higher quantum efficiency in the 20 eV to 1.5KeV range.A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. Previously, SRP and SIMS measurements were used to characterize the shallow dopant profile, and sensors with the new entrance window process were deployed successfully to measure an Fe-55 x-ray spectrum. For the first time, we present quantum efficiency measurement for soft x-rays. Furthermore, the resulting estimate of the entrance window is 20nm for an arsenic implanted entrance window and 55nm for a boron implanted entrance window.

47 OTHER INSTRUMENTATION↗

Opto-Electronic Characterization CdTe Solar Cells from TCO to Back Contact with Nano-Scale CL Probe

We used cathodoluminescence (CL) (spectrum-per-pixel) imaging on beveled CdTe solar cell sections to investigate the opto-electronic properties of these devices from the TCO to the back contact. We used a nano-scale CL probe to resolve luminescence from grain boundary (GB) and grain interior (GI) locations near the CdS/CdTe interface where the grains are very small. As-deposited, CdCl2-treated, Cu-treated, and (CdCl2+Cu)-treated cells were analyzed. Color-coded CL spectrum imaging maps on bevels illustrate the distribution of the T=6 K luminescence transitions through the depth of devices with unprecedented spatial resolution. The CL at the GBs and GIs is shown to vary significantly from the front to the back of devices and is a sensitive function of processing. Supporting D-SIMS depth profile, TRPL lifetime, and C-V measurements are used to link the CL data to the J-V performance of devices.

14 SOLAR ENERGY↗

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

14 SOLAR ENERGY↗

Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se 2 Semiconductor Thin Films

The recrystallization by indium chloride of Cu(In,Ga)Se 2 thin films deposited by co-evaporation at 350°C was studied. The process of recrystallization consists of the postdeposition treatment of CIGS sample by InCI3 vapor for 30 minutes with emphasis on grain growth. Here, the treatment resulted in uniform increased grain size and improved crystallinity. XRD measurements suggests the formation of indium rich phase. Dynamic SIMS were also performed to further understand the process, phase separation and the extent of gallium depletion.

14 SOLAR ENERGY↗

Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

14 SOLAR ENERGY↗

Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se 2 Thin Film

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage coevaporation process on molybdenum coated glass substrate. Here, a vapor treatment was done in between the second and third stage by flashing CuCl 2 for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.

14 SOLAR ENERGY↗

Grain Enhancement in Polycrystalline CuGaSe 2 by AgBr Vapor Treatment

Copper Gallium diselenide (CuGaSe 2 or CGS) thin film were deposited using a three-stage thermal co-evaporation process on molybdenum coated soda lime glass. Recrystallization was carried after the second stage by flashing AgBr for 2 mins. The change in morphology, structure and depth profile were studied after the treatment. SEM and XRD showed an increase in grain size and enhanced crystallinity. Here, a decrease in sodium profile after the treatment was observed through SIMS measurements. Overall, AgBr treatment of CGS seems to be promising for the improvement of film quality, which could help with enhanced device fabrication in the future.

14 SOLAR ENERGY↗

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗

A Framework for Integrating Quantum Simulation and High Performance Computing

Scientific applications are starting to explore the viability of quantum computing. This exploration typically begins with quantum simulations that can run on existing classical platforms, albeit without the performance advantages of real quantum resources. In the context of high-performance computing (HPC), the incorporation of simulation software can often take advantage of the powerful resources to help scale-up the simulation size. The configuration, installation and operation of these quantum simulation packages on HPC resources can often be rather daunting and increases friction for experimentation by scientific application developers. We describe a framework to help streamline access to quantum simulation software running on HPC resources. This includes an interface for circuit-based quantum computing tasks, as well as the necessary resource management infrastructure to make effective use of the underlying HPC resources. The primary contributions of this work include a classification of different usage models for quantum simulation in an HPC context, a review of the software architecture for our approach and a detailed description of the prototype implementation to experiment with these ideas using two different simulators (TNQVM & NWQ-Sim). We include initial experimental results running on the Frontier supercomputer at the Oak Ridge Leadership Computing Facility (OLCF) using a synthetic workload generated via the SupermarQ quantum benchmarking framework.

Shehata, Amir [ORNL] (ORCID:0000000224531426)↗

Analysis of Screening Current Effects in a Hybrid Nb$_{3}$Sn/REBCO Superconducting Accelerator Magnet Using a T - A Formulation

To explore the feasibility of using high-temperature superconducting (HTS) REBCO coated conductors in future accelerator magnets, two REBCO flat racetrack coils were fabricated using 4-mm wide EuBCO tapes at the High Energy Accelerator Research Organization (KEK). These coils were tested as an insert inside a Nb$_{3}$Sn common-coil dipole magnet, which provides a background field of up to $\sim$ 9.5T, at the Brookhaven National Laboratory (BNL). REBCO tapes offer exceptionally high critical current density under strong magnetic fields; however, they also exhibit significant magnetization due to screening currents, leading to magnetic field errors. Here, this study presents a 2D finite element model of screening current-induced fields (SCIF) in REBCO coils using the T-A formulation, along with the results obtained. Simulations were then performed for two KEK test cases: one where the REBCO conductors were oriented with the HTS tapes parallel to the background field, and another where the tapes were perpendicular to it. Since screening currents also influence the stress distribution and increase the peak stress in the coils, the mechanical effects of these currents were analyzed. The implications of these simulation and test results for the design of Nb$_{3}$Sn/REBCO superconducting accelerator magnets are discussed.

Accelerator magnets↗

Enhancements to VTK enabling Scientific Visualization in Immersive Environments

Modern scientific, engineering and medical computational sim- ulations, as well as experimental and observational data sens- ing/measuring devices, produce enormous amounts of data. While statistical analysis provides insight into this data, scientific vi- sualization is tactically important for scientific discovery, prod- uct design and data analysis. These benefits are impeded, how- ever, when scientific visualization algorithms are implemented from scratch—a time-consuming and redundant process in im- mersive application development. This process can greatly ben- efit from leveraging the state-of-the-art open-source Visualization Toolkit (VTK) and its community. Over the past two (almost three) decades, integrating VTK with a virtual reality (VR) environment has only been attempted to varying degrees of success. In this pa- per, we demonstrate two new approaches to simplify this amalga- mation of an immersive interface with visualization rendering from VTK. In addition, we cover several enhancements to VTK that pro- vide near real-time updates and efficient interaction. Finally, we demonstrate the combination of VTK with both Vrui and OpenVR immersive environments in example applications.

97 MATHEMATICS AND COMPUTING↗