Effect of Ar ion-beam-assistance and substrate temperature on physical properties of Al-doped ZnO thin films deposited by RF magnetron sputtering
Highlights: • AZO and IAZO (303–473 K) films were grown by RF magnetron sputtering technique. • Ar ion-beam converts its kinetic energy as diffusion energy to the deposited atoms. • Structural evolution relies on diffusion energy imparted to the deposited atoms. • Surface texture densify under the aid of ion-beam and substrate temperature. - Abstract: In this study, pronounced effects of ion-beam-assistance and substrate temperature were revealed by exploring the physical properties of Al-doped ZnO thin films deposited by the RF magnetron sputtering technique. Herein, two measurable parameters, ion-beam discharge current (0.1 A) and substrate temperature (303–473 K) were adopted to regulate the structural changes in Al-doped ZnO films. Specifically, progressive structural changes were achieved based on the addition of Ar ion-beam during the film growth. From XRD analysis, we observed significant structural changes that provided an improvement in the film growth towards c-axis (002) plane. In addition, FESEM and AFM analyses demonstrated excellent surface features with the assisted Ar ion-beam. As a result of this process, we effectively modulated the binding energy of Zn 2p level. Finally, the structural investigation accurately demonstrated that the dependence of assisted ion-beam and substrate temperature linearly related to the superior visible transmittance and reduced band gap.