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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,657 records · Page 92
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Electromechanical response of piezoelectric thin films subjected to large strain

The use of piezoelectric thin sensors, when subjected to large static strain levels in ultrasonic applications is reported in this paper. A novel flipped beam bending method is proposed to induce static strain level nearing twice the incipient yield strain in the beam material (~0.39%). First, the effect of static large strain on ultrasonic guided wave propagation in the beam was studied using the velocity measurements obtained from a laser Doppler vibrometer. Next, the ultrasonic response of thin sensors is studied under compressive and tensile static strain (±0.72%) with the sensors symmetrically bonded on the lower and upper surfaces, and at the same axial location. The ultrasonic guided wave response to varying levels of static strain is recorded at different center frequencies (50–400 kHz) of the narrow banded ultrasonic excitation. As a case study, the variation of the ultrasonic guided wave response of polyvinylidene difluoride (PVDF) thin sensors with center frequencies at different static strain levels was analyzed and compared with that of lead zirconate titanate (PZT) thin sensors. PZT sensors show a higher variation of sensing performance with strain when compared to PVDF sensors. Apart from static strain, the possible effects on the change in performance of sensors, such as the change in the capacitance is discussed. The characterization method provides a reusable beam arrangement to study the ultrasonic sensor performance at large static strain levels. Characterization at large strain level allows the development of fail-safe sensors even under large strain and permanent plastic deformation of structure on which they are bonded, allowing accurate ultrasonic structural health monitoring even in the presence of damage progression. Piezopolymer sensor like PVDF are least susceptible to static strain due to large yield strain and low modulus and can serve as fail-safe sensors under large strain.

Rathod, Vivek↗
DOE OSTI2022

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors

Aluminum gallium-nitride (Al x Ga 1–x N)-based metal–semiconductor–metal (MSM) ultraviolet photodetectors photodetectors (PD’s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3. (Al)GaN-based UV PD’s have wide and tunable direct band gaps. The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al x Ga 1–x N) is a significant advantage of these group III–V compounds. Typically, MSM PD’s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers. These devices are limited by the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devices’ performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltage–independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Here, (Al x )Ga 1–x N photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

42 ENGINEERING↗
DOE OSTI2023

A mid-scale plasma-electrode Pockels cell for the FLUX laser

A mid-scale (270 x 270-mm aperture) plasma-electrode Pockels cell (PEPC) has been developed for the pump laser system in FLUX (the fourth-generation laser for ultrabroadband experiments). The FLUX mid-scale PEPC is adapted from the PEPC used in the OMEGA EP beamlines (410 x 410-mm aperture), with certain dimensions scaled to reduce capacitance while maintaining key plasma characteristics. After experimental optimization of operating parameters, particularly the plasma current, <70-ns switching time with excellent (>1000:1) contrast has been demonstrated. Dependence of optical switching performance on operating conditions is explained by a plasma model.

AMICA↗
DOE OSTI2021

A stretchable and strain-unperturbed pressure sensor for motion interference–free tactile monitoring on skins

A stretchable pressure sensor is a necessary tool for perceiving physical interactions that take place on soft/deformable skins present in human bodies, prosthetic limbs, or soft robots. However, all existing types of stretchable pressure sensors have an inherent limitation, which is the interference of stretching with pressure sensing accuracy. Here, we present a design for a highly stretchable and highly sensitive pressure sensor that can provide unaltered sensing performance under stretching, which is realized through the synergistic creations of an ionic capacitive sensing mechanism and a mechanically hierarchical microstructure. Via this optimized structure, our sensor exhibits 98% strain insensitivity up to 50% strain and a low pressure detection limit of 0.2 Pa. With the capability to provide all the desired characteristics for quantitative pressure sensing on a deformable surface, this sensor has been used to realize the accurate sensation of physical interactions on human or soft robotic skin.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Controlling and visualizing Dirac physics in topological semimetal heterostructures

A bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases. In this work, the quantum capacitance of cadmium arsenide–based heterostructures provides two direct experimental signatures of three-dimensional topological insulator physics: an insulating three-dimensional bulk and a Landau level at zero energy that does not disperse in a magnetic field. We proceed to join our ability to see these fingerprints of the topological surface states with flexibility afforded by our epitaxial heterostructures to demonstrate a route toward controlling the energy of the Dirac nodes on each surface. These results point to new avenues for engineering topological insulators based on cadmium arsenide.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials

Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden–Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Electrostatic interaction of macroparticles in a plasma in the strong screening regime

We have studied the electrostatic interaction of spherical particles in an equilibrium plasma or an electrolyte in the moderate and strong screening regimes when the macroparticle size is comparable with or much larger than the Debye screening radius. We have developed an approximate theory of the electrostatic interaction of macroparticles in the case of constant potentials of their surfaces in the weak or moderate screening regimes. In this theory, the charges of macroparticles with a fixed spacing between them are determined using vacuum capacitive coefficients, which are corrected taking into account the plasma screening effects. The force of interaction with the resultant charges is calculated based on the solution of the problem of interaction in a homogeneous dielectric (vacuum) and is multiplied by the plasma factor. We have also obtained an approximate solution to the problem in the strong screening regime. Comparison with the exact solution has demonstrated high accuracy of the proposed methods of calculation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Electronic properties of a Weyl semimetal in crossed magnetic and electric fields

The study of Weyl semimetals is one of the most challenging problems of condensed matter physics. These materials exhibit interesting properties in a magnetic field. In this work, we investigate the Landau bands and the density of states (DOS) oscillations in a Weyl semimetal in crossed magnetic and electric fields. An expression is obtained for the energy spectrum of the system using the following three different methods: an algebraic approach, a Lorentz shift-based approach, and a quasi-classical approach. It is interesting that the energy spectrum calculated in terms of the quasi-classical approach coincides with the spectrum obtained using the microscopic approaches. An electric field is shown to change the Landau bands radically. In addition, the classical motion of a three-dimensional Dirac fermion in crossed fields is studied. In the case of a Dirac spectrum, the longitudinal (with respect to magnetic field) component of momentum (p{sub z} ǁ H) is shown to be an oscillating function of the magnetic field. When the electric field is v⊥H/c, the Landau levels collapse and the motion becomes fully linear in an unusual manner. In this case, the wavefunction of bulk states vanishes and only states with p{sub z} = 0 are retained. An electric field affects the character of DOS oscillations. An analytical expression is obtained for the quantum capacitance in crossed fields in the cases of strong and weak electric fields. Thus, an electric field is an additional parameter for adjusting the diamagnetic properties of Weyl semimetals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Laser-Induced Phase Transition in a Monolayer of Polymer Particles Levitating in a Low-Pressure Gas-Discharge Plasma

We report on the results of analysis of the mean kinetic energy and the pair correlation function of polymer particles in a plasma–dust structure under the action of laser radiation. We have observed experimentally the crystal–liquid phase transition in the monolayer of particles levitating in the near-electrode layer of a capacitive high-frequency discharge. The coupling parameter of the dust system has been estimated. The results of analysis of the modification of the polymer dust particle surface after holding in the plasma are considered. We propose an explanation of the phase transition taking into account the role of the photophoretic force in the motion of macroparticles. The effect of the photophoretic force is associated with the modification of the dust particle surface in the plasma, as a result of which the particles can effectively absorb laser radiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Radio-frequency discharge in a molecular gas flow at a frequency of 1.76 MHz

Results are presented from experiments on the initiation of a homogeneous stable capacitive RF discharge at a frequency of 1.76 MHz in a high-speed molecular gas flow between metal electrodes at a pressure of 5 Torr or dielectric-coated electrodes at a pressure of up to 50 Torr. A mechanism of the current closure in the electrode sheaths related to the primary photoelectric current generated alternately from different electrodes is proposed. The average electron energy increases via second-kind (superelastic) collisions, and fast electrons with energies corresponding to the amplitude value of the RF voltage appear in the electron energy spectrum. As a result, primary emission arises due to the excitation of emitting states from metastable molecular levels. The primary photoelectric current initiates electron avalanches in the electrode sheaths due to secondary photoelectron emission. According to calculations, the current−voltage characteristic of the sheath in this type of discharge is ascending and the field strengths in the electrode sheath and positive column are lower than those in a self-sustained dc discharge. The calculated results are compared with the experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

A Plasma Focus Device with a 2-MA Discharge Current as a Hard X-Ray Source

A device based on a pulsed current generator with capacitive energy storage loaded on a plasma focus (PF) chamber is described. The device provides a discharge current amplitude of up to 2 MA in the PF chamber at a stored energy in the capacitor bank of up to 150 kJ. The PF chamber is designed to study hard X-ray (HXR) emission. It has windows for output of HXR emission in the cathode direction, as well as a special insert for output of HXR emission into the anode cavity. A study of operation of the chamber as a part of the setup with the use of various X-ray targets on the anode has been carried out. At a discharge current of 1.5MA, an HXR pulse with an average duration of 16 ns and energy spectrum from 10 to 200 keV, which provides an absorbed dose in the irradiated samples on the order of 1 Sv, is generated in the PF chamber.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

The high-frequency capacitance–voltage characteristics of metal–oxide–semiconductor structures on n-Si substrates with an oxide thickness of 39 Å are studied upon being subjected to damage by field stress. It is shown that the action of a high, but pre-breakdown electric field on an ultrathin insulating layer brings about the formation of a large number of additional localized interface electron states with an energy level arranged at 0.14 eV below the conduction band of silicon. It is found that, as the field stress is increased, the recharging of newly formed centers provides the accumulation of excess charge up to 8 × 10{sup 12} cm{sup –2} at the silicon–oxide interface. The lifetime of localized centers created under field stress is two days, after which the dependences of the charge localized at the semiconductor–insulator interface on the voltage at the gate after and before field stress are practically the same.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation

A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10{sup 14} cm{sup –2} is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Charge density at the Al{sub 2}O{sub 3}/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal–lnsulator–Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al{sub 2}O{sub 3}/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi–Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C–V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers

The results of an experimental study of the capacitance–voltage (C–V) characteristics and deep-level transient spectroscopy (DLTS) spectra of p{sup +}–p{sup 0}–i–n{sup 0} homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL2 and HL5 are found in the epitaxial p{sup 0} and n{sup 0} layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED1 and HD3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies (E{sub t}), capture cross sections (σ{sub p}), and concentrations (N{sub t}) are calculated from the Arrhenius dependences to be E{sub t} = 845 meV, σ{sub p} = 1.33 × 10{sup –12} cm{sup 2}, N{sub t} = 3.80 × 10{sup 14} cm{sup –3} for InGaAs/GaAs and E{sub t} = 848 meV, σ{sub p} = 2.73 × 10{sup –12} cm{sup 2}, N{sub t} = 2.40 × 10{sup 14} cm{sup –3} for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 × 10{sup –10} s and 1.5 × 10{sup –10} s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 × 10{sup –6} s for the GaAs homostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage V{sub oc} = 1.84 V and the short-circuit current density I{sub sc} = 2.9 mA/cm{sup 2} under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Impact of UV Pulsed Laser Radiation and of the Electron Flow on Dielectric States of Polymer Composite Nanomaterial Based on LDPE Matrix

The influence of the soft electron flow and irradiating pulsed UV laser on dielectric states of polymer composite nanomaterial based on LDPE matrix is experimentally studied. It was shown that irradiation of the samples LDPE–ZnO by electron beam (10 keV) for 10–15 minutes gives rise the appearance of the horizontal portion of the temperature dependence of capacitance (permittivity) and to memory effect (slow relaxation of dielectric situation within a few days). Irradiation with pulsed UV laser of the LDPE–CdS sample allows you to switch into a conducting state and return it to their original state upon application of a weak electric field. The observed phenomena may find practical applications for the polymer electronic memories and switching devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures

Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current- voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

36 MATERIALS SCIENCE↗