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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,675 records · Page 93
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Oxygen and Proton Transport in Flooded Graphene Pores with N-Dopants and Defects

Reactant transport is an important consideration in the design of ideal electrode structures. For the oxygen reduction reaction catalyzed by Pt/C in proton exchange membrane fuel cell cathodes, O 2 and H + delivery to Pt surfaces and H 2 O transport away are required. Some Pt nanoparticles may only be accessible via micropores that are too small for ionomer molecules to enter, possibly requiring flooding for H + transport. Here, to test if these “buried” Pt particles can play a role in activity through this proposed transport mechanism, we have performed atomic-scale simulations based on reactive force field molecular dynamics with an emphasis on confinement below 20 Å. Diffusion coefficients as a function of the molar concentration and local environment have been evaluated in water domains confined in two-dimensional graphene nanochannels of various channel heights representing a morphological model for micropores in proton exchange fuel cell cathodes. Our study shows that local atomic-scale structures can strongly modify H + , O 2 , and H 2 O transport rates in flooded micropores less than 20 Å in size. We find that there is a critical crossover in diffusion behavior around the 20 Å spacing with larger pores having bulk-like diffusion properties and confinement below 20 Å monotonically decreases diffusion rates. As pore size decreases, we observe locally dispersed water regions that ultimately strand reactants from long-distance transport. These findings suggest that flooded micropores may in fact be viable transport pathways for relevant reactants and products if the pore walls on opposite sides remain separated by ≥10 Å separation. Furthermore, the confinement effect is so strong that N-doping and C-vacancy defects in the C pore wall have only a minimal impact on diffusion rates and their effects are counterintuitively more apparent at larger spacings. These findings provide valuable insight regarding cathode performance and the role “stranded” catalyst particles may play in fuel cell cathodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Positive magnetoresistance in Ca-doped cobaltites

Transport properties of polycrystalline La{sub 1−x}Ca{sub x}CoO{sub 3} (0.10 ≤ x ≤ 0.25) are systemically studied in this work. Three types of magnetoresistance (MR) effects are found in the Ca-doped cobaltites. Two negative MRs appear around high-temperature ferromagnetic transition and at low temperatures, which correspond to the conventional MR due to the field-induced suppression of spin-disorder scattering and the intergranular giant-MR due to spin-dependent transport between the ferromagnetic clusters, respectively. More interestingly, another exotic positive MR emerges at intermediate temperature region, which had not been previously reported in Sr- and Ba-doped cobaltites. It is found that this positive MR is associated with an abnormally magnetic transition and increases with the increase of x. For x = 0.25, the MR at low temperatures is dominated by the positive one, which is isotropic and nearly linear with the magnetic field. The possible origin of the positive MR in the Ca-doped cobaltites is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

The impact of boron doping on the p-layer of thin film silicon solar cells is assessed by measuring the effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunctions. A deviation from ideal diode characteristics is revealed by an increase of ideality factor with doping concentration. Higher current densities and lower effective Schottky barriers are evaluated for higher doping levels, resulting in increasingly Ohmic behaviour. This is attributed to an enhancement of tunneling through a thinner depletion region, as supported by computer simulations. Extracted barriers are in the range of 0.7–1 eV for the heterojunctions with rectifying behaviour.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Guided Mode Evolution and Ionization Injection in Meter-Scale Multi-GeV Laser Wakefield Accelerators

Here, we show that multi-GeV laser wakefield electron accelerators in meter-scale, low density hydrodynamic plasma waveguides operate in a new nonlinear propagation regime dominated by sustained beating of lowest order modes of the ponderomotively modified channel; this occurs whether or not the injected pulse is linearly matched to the guide. For a continuously doped gas jet, this emergent mode beating effect leads to axially modulated enhancement of ionization injection and a multi-GeV energy spectrum of multiple quasimonoenergetic peaks; the same process in a locally doped jet produces single multi-GeV peaks with <10% energy spread. A three-stage model of drive laser pulse evolution and ionization injection characterizes the beating effect and explains our experimental results.

43 PARTICLE ACCELERATORS↗
NASA NTRS1978

The effects of copper and titanium on silicon solar cells

Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.

Salama, A. M.↗
DOE OSTI2016

Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Research on stability and uniformity of multi-wavelength Brillouin-erbium fiber laser based on FWM

In this paper, we experimentally and theoretically investigate the stability and uniformity of multi-wavelength Brillouin-erbium fiber laser based on four-wave mixing (FWM). Multi-wavelength generation is limited by cross-gain saturation between different wavelengths from homogeneous broadening of erbium-doped fiber. Modeling coupled-mode equation for FWM and analyzing the influence of FWM on multi-wavelength generation. 16 orders Brillouin Stokes (BS) waves with a wavelength spacing of 0.084 nm are obtained experimentally within a 3 dB bandwidth by the FWM effect in a 100 m highly nonlinear fiber (HNLF), power distribution of each laser is uniform and peak power fluctuation is less than 1.184 dB within a 10 dB bandwidth, the outputs exhibit good time stability and uniformity. Compared with the same configuration, the laser without HNLF has only 9 orders stable BS waves within 3 dB bandwidth, and high-order Stokes wave shows significant waveform jitter and power fluctuation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Enhanced low-energy magnetic excitations evidencing the Cu-induced localization in the Fe-based superconductor Fe 0.98 Te 0.5 Se 0.5

Here, we have performed inelastic neutron scattering measurements on optimally doped Fe 0.98 Te 0.5 Se 0.5 and 10% Cu-doped Fe 0.88 Cu 0.1 Te 0.5 Se 0.5 to investigate the substitution effects on the spin excitations in the whole energy range up to 300 meV. It is found that substitution of Cu for Fe enhances the low-energy spin excitations (≤100 meV), especially around the (0.5, 0.5) point, and leaves the high-energy magnetic excitations intact. In contrast to the expectation that Cu with spin 1/2 will dilute the magnetic moments contributed by Fe with a larger spin, we find that the 10% Cu doping enlarges the effective fluctuating moment from 2.85 to 3.13 μB/Fe, although there is no long- or short-range magnetic order around (0.5, 0.5) and (0.5, 0). The presence of enhanced magnetic excitations in the 10% Cu doped sample which is in the insulating state indicates that the magnetic excitations must have some contributions from the local moments, reflecting the dual nature of the magnetism in iron-based superconductors. We attribute the substitution effects to the localization of the itinerant electrons induced by Cu dopants. Furthermore, these results indicate that the Cu doping does not act as electron donor as in a rigid-band shift model, but more as scattering centers that localize the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy

A chemical potential shift in an organic field effect transistor (OFET) during operation has been revealed by soft X-ray operando nano-spectroscopy analysis performed using a three-dimensional nanoscale electron-spectroscopy chemical analysis system. OFETs were fabricated using ultrathin (3 ML or 12 nm) single-crystalline C10-DNBDT-NW films on SiO{sub 2} (200 nm)/Si substrates with a backgate electrode and top source/drain Au electrodes, and C 1s line profiles under biasing at the backgate and drain electrodes were measured. When applying −30 V to the backgate, there is C 1s core level shift of 0.1 eV; this shift can be attributed to a chemical potential shift corresponding to band bending by the field effect, resulting in p-type doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Predictability as a probe of manifest and latent physics: The case of atomic scale structural, chemical, and polarization behaviors in multiferroic Sm-doped BiFeO 3

The predictability of a certain effect or phenomenon is often equated with the knowledge of relevant physical laws, typically understood as a functional or numerically derived relationship between the observations and known states of the system. Correspondingly, observations inconsistent with prior knowledge can be used to derive new knowledge on the nature of the system or indicate the presence of yet unknown mechanisms. In this work, we explore the applicability of Gaussian processes (GP) to establish predictability and uncertainty of local behaviors from multimodal observations, providing an alternative to this classical paradigm. Using atomic resolution scanning transmission electron microscopy (STEM) of multiferroic Sm-doped BiFeO 3 across a broad composition range, we directly visualize the atomic structure and structural, physical, and chemical order parameter fields for the material. GP regression is used to establish the predictability of the local polarization field from different groups of parameters, including the adjacent polarization values and several combinations of physical and chemical descriptors, including lattice parameters, column intensities, etc. We observe that certain elements of microstructure, including charged and uncharged domain walls and interfaces with the substrate, are best predicted with specific combinations of descriptors, and this predictability and associated uncertainties are consistent across the composition series. The associated generative physical mechanisms are discussed. It is also found that certain parameter combinations tend to predict the orthorhombic phase in the cases where rhombohedral phase is observed, suggesting a potential role of clamping and confinement phenomena in phase equilibrium in Sm-BiFeO 3 system close to morphotropic phase boundary. We argue that predictability and uncertainty in observational data offer a new pathway to probe the physics of condensed matter systems from multimodal local observations.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2017

Quantum Dot Sensitized Solar Cells Based on Ternary Metal Oxide Nanowires

In Phase I of this project we investigate quantum dot sensitized solar cells (QDSSCs) based on ternary metal oxide nanowires and study the physical and chemical mechanisms that govern device operation. Our research has the following five objectives: (1) synthesis of ternary metal oxide nanowires, (2) synthesis of QDs and exploration of non-solution based QD deposition methods, (3) physical and electro-optical characterizations of fabricated solar devices, (4) device modeling and first-principle theoretical study of transport physics, and (5) investigation of long-term stability issues of QD sensitized solar cells. In Phase II of this project our first major research goal is to investigate magnetically doped quantum dots and related spin polarization effect, which could improve light absorption and suppress electron relaxation in the QDs. We will utilize both physical and chemical methods to synthesize these doped QDs. We will also study magnetically modified nanowires and introduce spin-polarized transport into QDSSCs, and inspect its impact on forward electron injection and back electron transfer processes. Our second goal is to study novel solid-state electrolytes for QDSSCs. Specifically, we will inspect a new type of polymer electrolytes based on a modified polysulfide redox couple, and examine the effect of their electrical properties on QDSSC performance. These solid-state electrolytes could also be used as filler materials for in situ sample fracturing in STM and enable cross-sectional interface examination of QD/nanowire structures. Our third research goal is to examine the interfacial properties such as energy level alignment at QD/nanowire interfaces using the newly developed Cross-sectional Scanning Tunneling Microscopy and Spectroscopy technique for non-cleavable materials. This technique allows a direct probing of band structures and alignment at device interfaces, which could generate important insight into the mechanisms that govern QDSSC operation. These investigations will be carried out through a close collaboration between our experimental and theoretical efforts in this project. This project initiates an important research direction in the jurisdiction of Wyoming. It brings together researchers from different academic disciplines including physics, chemistry, materials science, and engineering to work on one common scientific theme, and is a vital step towards the establishment of an nationally competitive research program in energy-related nanomaterials in the state of Wyoming.

14 SOLAR ENERGY↗
DOE OSTI2014

One-step synthesis of layered yttrium hydroxides in immiscible liquid–liquid systems: Intercalation of sterically-bulky hydrophobic organic anions and doping of europium ions

Inorganic–organic layered rare-earth compounds were synthesized on the basis of a biphasic liquid–liquid system in one pot. Layered yttrium hydroxides (LYHs) were chosen as a host material for the intercalation of hydrophobic organic guest anions such as benzoate, sebacate, or laurate. In a typical synthesis, an organic phase dissolving carboxylic acid was placed in contact with an equal amount of an aqueous phase dissolving yttrium nitrate n-hydrate and urea. At elevated temperatures up to 80 °C, urea was hydrolyzed to release hydroxyl anions which were used to form yttrium hydroxide layers. LYHs were then precipitated with the intercalation of carboxylate anions delivered from the organic phase under the distribution law. The structure and the morphology of the LYHs could be modulated by the intercalated anions. Doped with Eu{sup 3+} ions, the LYHs exhibited red photoluminescence which was enhanced by the intercalated anions due to the antenna effect. - Graphical abstract: The Eu{sup 3+}-doped layered yttrium hydroxide exhibits intense red photoluminescence after intercalation of benzoate ions. Display Omitted - Highlights: • Immiscible biphasic liquid systems were introduced to synthesize layered yttrium hydroxides. • The temperature of the biphasic systems does not exceed 80 °C in one step of the synthesis. • Hydrophobic organic anions were intercalated between the hydroxide layers in one pot. • Structure and morphology of the hydroxides were modulated by changing the kind of organic anions. • Eu{sup 3+}-doping led to red luminescence from the hydroxides in association with the intercalated organic anions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Chemical Trend of Transition-Metal Doping in W Se 2

Transition-metal dichalcogenides (TMDs) are promising nanoscale materials with a wide range of applications. Chemical doping is a powerful tool for tailoring the physical and chemical properties of TMDs for targeted functionalities. As one of the most important TMDs, WSe 2 has great potential for applications in field effect transistor and complementary metal oxide semiconductor technologies for its bipolar dopability. Yet, precise control over the type and density of free carriers remains challenging. First-principles calculations are performed to study intrinsic defects and transition-metal (TM) dopants in WSe 2 . Our findings demonstrate that TM doping can effectively control the Fermi level in WSe 2 with no significant compensation by intrinsic defects. Nb and Ta are effective p-type dopants capable of generating a high free hole density in WSe 2 . While n-type doping is possible by Re (under the Se-rich condition) and Cu (under the W-rich condition), the doping efficiency is reduced due to the lower attainable dopant concentration and higher ionization energies. The chemical trend in the attainable concentration of various substitutional TM dopants in WSe 2 is largely determined by the competition between the dopant incorporation in WSe 2 and the formation of the secondary phase TMSe 2 . Such a competition is strongly affected by the different crystal environments of the TM ion in TMSe 2 and WSe 2 , which determine the crystal field splitting and electron filling of TM d levels and consequently the formation energy of the TM dopant.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂

Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, and B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in silica (SiO₂). In this paper, we investigate optical characterizations of both doped and un-doped Si-NCs prepared by this method. The effective NC presence in the oxide layer and their crystallinity is verified by Raman spectrometry. Photoluminescence (PL) and PL excitation measurements reveal quantum confinement effects and a gradual PL quenching with increasing dopant concentrations. In un-doped NC, the measured Stokes shift remains constant and its value ~0.2 eV is almost twice the Si–O vibration energy. This suggests that a possible radiative recombination path is a fundamental transition assisted by a local phonon. PL lifetime investigations show that PL time-decays follow a stretched exponential. Using a statistical model for luminescence quenching, a typical NC diameter close to 2 nm is obtained for As- and P-doped samples, consistent with our previous atomic probe tomography (APT) analyses. APT also demonstrated that n-type dopant (P and As) are efficiently introduced in the NC core, whereas p-type dopant (B) are located at the NC/SiO₂ interface. This last observation could explain the failure of the luminescence-quenching model to determine NC size in B-doped samples. All together, these experimental observations question on possible different carrier recombination paths in P or As doped NC compared to B one's.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1976

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗
DOE OSTI2018

Effect of Tuning the Structure on the Optical and Magnetic Properties by Various Transition Metal Doping in ZnO/TM (TM = Fe, FeCo, Cr, and Mn) Thin Films

We have investigated in this work the physical, optical, electronic, and the magnetic behavior (Curie temperature, magnetic moment) of Zn.1-x.MxO (M = Fe 5%, Co 1%, Cr 5%, and Mn 5%), diluted magnetic semiconductors (DMSs). The samples were deposited on glass substrate by the spray pyrolysis technique, and the results of the x-ray diffraction (XRD) of the prepared substrates was used to prove the incorporation of the dopants into the ZnO lattice host; the ferromagnetic and the antiferromagnetic state competitions and their effects on the physical, magnetic, and optical properties, were investigated. The electronic structure and magnetic properties of transition metal (TM) defects, were investigated in detail, by using the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA). As a result, doping by TM impurities induce the ferromagnetism with different competitions between the ferromagnetic and antiferromagnetic states, which affects the physical properties of the TM (Fe, Fe/Co, Cr, and Mn)-doped ZnO, with a Curie temperature closer to room-temperature ferromagnetic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A comparative investigation on structure and multiferroic properties of bismuth ferrite thin films by multielement co-doping

Highlights: • Multielement (Tb, Cr and Mn) co-doped BiFeO{sub 3} films were fabricated by CSD method. • Multielement co-doping induces a structural transition. • It is found effective to stabilize the valence of Fe ions at +3 by the strategy. • The co-doping at A/B-sites gives rise to the superior multiferroic properties. - Abstract: (Tb, Cr and Mn) multielement co-doped BiFeO{sub 3} (BTFCMO) thin films were prepared by the chemical solution deposition method on fluorine doped tin oxide (FTO) substrates. X-ray diffraction, Rietveld refinement and Raman analyses revealed that a phase transition from rhombohedral to triclinic structure occurs in the multielement co-doped BiFeO{sub 3} films. It is found that the doping is conducive to stabilizing the valence of Fe ions and reducing leakage current. In addition, the highly enhanced ferroelectric properties with a huge remanent polarization (2P{sub r}) of 239.6 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 615.6 kV/cm are ascribed to the well film texture, the structure transition and the reduced leakage current by the co-doping. Moreover, the structure transition is the dominant factor resulting in the significant enhancement observed in magnetization (M{sub s} ∼ 10.5 emu/cm{sup 3}), owing to the collapse of the space-modulated spin structure. In this contribution, these results demonstrate that the multielement co-doping is in favor of the enhanced multiferroic properties of the BFO films for possible multifunctional applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Herein, we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗