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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

General kinetic ion-induced electron emission model for metallic walls applied to biased Z-pinch electrodes

A kinetic ion-induced electron emission (IIEE) model for general applications is developed to obtain the emitted electron energy spectrum for a distribution of ion impacts on a metallic surface. We assume an ionization cascade mechanism and use empirical models for the ion and electron stopping powers. The emission spectrum and the secondary electron yield (SEY) are validated for a variety of materials. The IIEE model is used to study the effect of IIEE on the plasma-material interactions of Z-pinch electrodes. Un-magnetized Boltzmann-Poisson simulations are performed for a Z-pinch plasma doubly bounded by two biased copper electrodes with and without IIEE at bias potentials from 0 to 9 kV. At the anode, the SEY decreases from 0 to 1 kV, but then increases at higher bias potentials. At the cathode, the SEY is much larger due to higher energy ion bombardment and grows with bias potential. As the bias potential increases, the emitted cathode electrons are accelerated to higher energies into the domain, collisionally heating the plasma. Above 1 kV, the heating is strong enough to increase the plasma potential. Despite SEY greater than 1, only a classical sheath forms as opposed to a space-charge limited or inverse sheath due to the emitted electron flux not reaching the space charge current saturation limits. Furthermore, the current in the emissionless cases saturates to a value lower than experiment. With IIEE, the current does not saturate and continues to increase with the 4 kV case, matching most closely with the experiment.

Carbon based materials↗
NASA NTRS2004

Passive Thermal Control Challenges for Future Exploration Missions

This slide presentation reviews the importance of developing passive thermal control for the future exploration missions envisioned in President Bush's call for human exploration of the Moon and Mars. Included in the presentation is a review of the conditions that make the thermal control very challenging on the Moon and Mars. With the future miniaturization of electronics components, power density and the associated challenges of electronics heat dissipation will provide new challenges. There is a challenge for improvement in modeling and analysis of thermal control systems, and for improved facilities to support testing of thermal-vacuum systems.

Rickman, Steven L.↗
NASA NTRS1985

Energy and momentum management of the Space Station using magnetically suspended composite rotors

The research addresses the feasibility of using magnetically suspended composite rotors to jointly perform the energy and momentum management functions of an advanced manned Space Station. Recent advancements in composite materials, magnetic suspensions, and power conversion electronics have given flywheel concepts the potential to simultaneously perform these functions for large, long duration spacecraft, while offering significant weight, volume, and cost savings over conventional approaches. The Space Station flywheel concept arising out of this study consists of a composite-material rotor, a large-angle magnetic suspension (LAMS) system, an ironless armature motor/generator, and high-efficiency power conversion electronics. The LAMS design permits the application of appropriate spacecraft control torques without the use of conventional mechanical gimbals. In addition, flywheel systems have the growth potential and modularity needed to play a key role in many future system developments.

Eisenhaure, D. B.↗
DOE OSTI2022

Solid-State Transformer and Hybrid Transformer With Integrated Energy Storage in Active Distribution Grids: Technical and Economic Comparison, Dispatch, and Control

Solid-state transformer (SST) and hybrid transformer (HT) are promising alternatives to the line-frequency transformer (LFT) in smart grids. The SST features medium-frequency isolation, full controllability for voltage regulation, reactive power compensation, and the capability of battery energy storage system (BESS) integration with multiport configuration. The HT has a partially-rated converter for fractional controllability and can integrate a small BESS. Fast grid-edge voltage fluctuations from increased solar photovoltaic (PV) and electric vehicle (EV) penetration are difficult to manage for mechanical load tap changers. Hence, along with the trend towards more BESS in the grid, the controllability and the storage integration capability of the SST and HT are of strong interest. However, a review of literature shows existing SST and HT research is mostly at converter level, while system-level assessments are scarce. Assessing technical and economic impacts is critical to understanding the benefits and role of the SST and HT to guide future research, which is presented for the first time in this article. Experimental results from medium-voltage (MV) SST and MV HT prototypes are shown to confirm equipment-level feasibility, where the voltage controllability waveforms of a MV HT prototype are reported for the first time. Comparative simulations are performed on a modified IEEE 34-bus system. Here, a grid-model-less decentralized grid-edge voltage control method and a day-ahead BESS dispatch method are proposed for the SST and HT. The simulations show that the SST and HT with integrated storage can host more PV, achieve peak shaving, mitigate voltage fluctuation and reverse power flow, and support energy arbitrage for operational cost reduction, as compared to the LFT. Moreover, comprehensive analyses of net present value (NPV) and internal rate of return (IRR) are performed under different installed PV capacities, HT’s partial converter ratings, and BESS capacities. Sensitivities to future cost reductions of the PV and BESS are studied. Although the NPV and IRR are currently negative, 60% capital cost reduction or 150% revenue increase will make the SST and HT economically viable in the use case studied.

14 SOLAR ENERGY↗
NASA NTRS2005

Integrated low power digital gyro control electronics

Embodiments of the invention generally encompass a digital, application specific integrated circuit (ASIC) has been designed to perform excitation of a selected mode within a vibratory rate gyroscope, damping, or force-rebalance, of other modes within the sensor, and signal demodulation of the in-phase and quadrature components of the signal containing the angular rate information. The ASIC filters dedicated to each channel may be individually programmed to accommodate different rate sensor designs/technology or variations within the same class of sensors. The ASIC architecture employs a low-power design, making the ASIC, particularly suitable for use in power-sensitive applications.

M'Closkey, Robert↗
DOE OSTI2020

Multi-Scale Thermal Analysis for Design of SiC-Based Medium Voltage Motor Drive: Preprint

This paper describes a multi-scale thermal analysis approach for the design of an air-cooled 1.7-kV SiC MOSFET-based medium-voltage variable-speed motor drive. The National Renewable Energy Laboratory supported the project objectives by providing thermal management design support to the project partner The Ohio State University (OSU). The scope of the models and limited resources required efficient and flexible thermal models to be developed. Two modeling techniques are described that significantly reduced model run time and enabled more complex models to be run faster while retaining needed accuracy. The first technique uses the effectiveness-NTU method to extract convection boundary conditions from a computational fluid dynamics (CFD) model that can be applied to a fast-running finite element analysis model. The second is a porous media technique that enables system-level CFD simulations that incorporate effects from heat exchangers (e.g., pin fin heat sinks) that run in a fraction of the time required for fully resolved CFD simulations. The multi-scale approach to the thermal analysis enabled fast and accurate simulation for the converter design ranging from the die level up to the full system with 36 submodules. The modeling results were validated against experimental data from system tests performed by OSU.

DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Plasma stopping-power measurements reveal transition from non-degenerate to degenerate plasmas

Physically realized electron gas systems usually reside in either the quantum non-degenerate or fully degenerate limit, where the average de Broglie wavelength of the thermal electrons becomes comparable with the interparticle distance between electrons. A few systems, such as young brown dwarfs and the cold dense fuels created in imploded cryogenic capsules at the National Ignition Facility, lie between these two limits and are partially degenerate. The National Ignition Facility has the unique capability of varying the electron quantum degeneracy by adjusting the laser drive used to implode the capsules. This allows experimental studies of the effects of the degeneracy level on plasma transport properties. By measuring rare nuclear reactions in these cold dense fuels, we show that the electron stopping power, which is the rate of energy loss per unit distance travelled by a charged particle, changes with increasing electron density. We observe a quantum-induced shift in the peak of the stopping power using diagnostics that measure above and below this peak. The observed changes in the stopping power are shown to be unique to the transition region between non-degenerate and degenerate plasmas. Furthermore, our results support the screening models applied to partially degenerate astrophysical systems such as young brown dwarfs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Experimental Setup and Learning-Based AI Model for Developing Accurate PV Inverter Models

The integration of power electronics-based interfaces presents challenges due to the absence of detailed models and the high computational complexity. Generic models used in system studies lack accuracy in capturing converter dynamics. This paper proposes a data-driven approach developed from experimental setup data. This approach enhances accuracy in photovoltaic inverter modeling. We used two types of PV inverters in the experiment. The recorded experimental data undergo processing through a machine learning model. Results from the model trained through machine learning is also presented.

artificial intelligence↗
DOE OSTI2023

Improving Frequency Stability and Minimizing Load Shedding Events by Adopting Grid-Scale Energy Storage with Grid Forming Inverters

The upward adoption trend of renewable generation not only means cleaner energy integrated into modern power grids, but also that most new generation sources are based on front-end inverter bridges, used as interfaces to most wind generation and all the solar PV. It is well known that due to their power electronics-based construction rather than rotational shafts, these sources do not provide inertia inherently, nor substantial amounts of short-circuit currents. However, stable energy such as what can be stored in energy storage systems, although interfaced via inverters, can be controlled to respond to system disturbances in a manner that emulates inertial behavior. This paper focuses on the application of such energy storage systems to augment inertia in the island of Puerto Rico. To do so, a user defined inverter model that contains grid forming capabilities and fast frequency response is modeled and integrated into the real transmission system in power flow and dynamics software. Energy storage is then connected to two selected areas so that it not only provides frequency regulation to avoid widespread load shedding events, but also other tangible benefits. The simulated cases suggest that even relatively small energy storage systems can avert load shedding events if adequately placed in the transmission network.

Grid-forming inverters, IBR, Inertia↗
DOE OSTI2016

Design and numerical simulation of a high power capacity relativistic backward wave oscillator with an electron collection cavity

A high power capacity relativistic backward wave oscillator with an electron collection cavity (ECC) placed at the downstream of the slow wave structure (SWS) is presented. The breakdown threshold is increased, and the density of seed electron is suppressed by preventing the secondary electron, plasma, and powder generated from the bombardment of spent electron beam on the surface of the collector drifting to the extractor and beam-wave interaction region. The maximum longitudinal electric field in the device is reduced through extension of the span between electron beam and slow wave structure and weakening the Cerenkov radiation. The conversion efficiency reaches up to 52% owing to enhanced transit time radiation taking place at the entrance of the ECC. The maximum longitudinal electric field is 1.1 MV/cm on the surface of SWSs when the output power is 7.3 GW and the power capacity improves significantly.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1980

Electronic system for high power load control

Parallel current paths are divided into two groups, with control devices in the current paths of one group each having a current limiting resistor, and the control devices in the other group each having no limiting resistor, so that when the control devices of the second group are turned fully on, a short circuit is achieved by the arrangement of parallel current paths. Separate but coordinated control signals are provided to turn on the control devices of the first group and increase their conduction toward saturation as a function of control input, and when fully on, or shortly before, to turn on the control devices of the second group and increase their conduction toward saturation as a function of the control input as that input continues to increase. Electronic means may be used to generate signals. The system may be used for 1-V characteristic measurements of solar arrays as well as for other load control purposes.

Miller, E. L.↗
DOE OSTI2015

Fast-ion transport in qmin>2, high- β steady-state scenarios on DIII-D

The results from experiments on DIII-D [J. L. Luxon, Fusion Sci. Technol. 48, 828 (2005)] aimed at developing high β steady-state operating scenarios with high-qminqmin confirm that fast-ion transport is a critical issue for advanced tokamak development using neutral beam injection current drive. In DIII-D, greater than 11 MW of neutral beam heating power is applied with the intent of maximizing β N and the noninductive current drive. However, in scenarios with q min >2 that target the typical range of q 95 = 5–7 used in next-step steady-state reactor models, Alfvén eigenmodes cause greater fast-ion transport than classical models predict. This enhanced transport reduces the absorbed neutral beam heating power and current drive and limits the achievable β N . Conversely similar plasmas except with q min just above 1 have approximately classical fast-ion transport. Experiments that take q min >3 plasmas to higher β P with q 95 = 11–12 for testing long pulse operation exhibit regimes of better than expected thermal confinement. Compared to the standard high-q min scenario, the high β P cases have shorter slowing-down time and lower ∇β fast , and this reduces the drive for Alfvénic modes, yielding nearly classical fast-ion transport, high values of normalized confinement, β N , and noninductive current fraction. These results suggest DIII-D might obtain better performance in lower-q 95 , high-q min plasmas using broader neutral beam heating profiles and increased direct electron heating power to lower the drive for Alfvén eigenmodes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS2019

Cold Survivable Distributed Motor Controller (CSDMC)

This paper presents the results of NASA’s COLDTECH development entitled “Cold Survivable Distributed Motor Controller (CSDMC)”. This work addresses the need to lower the mass, power and volume of the motor control electronics and its associated cabling. Landed payload mass of ocean world missions typically requires a spacecraft launch mass of 7-10x the landed mass due to the required propellant to get the payload to the surface. Reduction of landed mass leads to cheaper, more frequent missions and/or increased science return. This work addresses this need by developing a distributed electronics architecture, which places control and power electronics near or at actuators and instruments. The outcome of this effort will result in a 10X reduction in harness mass, enabling a significant increase in science payload which then enables more capable sample acquisition, delivery and analysis systems on these missions. Placing the control and power conversion electronics at or near the actuators or instruments is the cornerstone of our distributed architecture. To do this, we developed the technology necessary to distribute the electronics and place them on a shared interface and power bus. This enables a significant reduction in cable mass along with its associated complexity. This allows spacecraft designers to take advantage of volume at the extremities that would normally not be utilized. In this paper we discuss the technologies and system design to achieve these goals in support of ocean world missions. These technologies include the development of our motor control modules, a point of load regulator and isolated converter modules along with the packaging technology necessary to allow our electronics to survive the extreme temperatures.

Stell, Chris↗
DOE OSTI2022

Superconducting Accelerators for High-Power X-ray production

To date, linear accelerators (linacs) as electron sources used to produce ionizing radiation for industrial purposes have been limited to less than 100 kW. When the electron beam is used directly, this is sufficient for most potential applications. However, when the electron beam is used for the production of photons (x-rays) which are then to be used in an application, this is not sufficient to compete with other sources of photons (gamma rays from cobalt-60). This paper will discuss acompact superconducting RF (CSRF) accelerator system that relies on emerging technologies that will be able to produce electron beam powers into the 100s of kW with efficiencies much better than present linacs. The focus is to produce x-ray beams for medical device sterilization to provide alternatives for the present use of cobalt-60 for this purpose.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Experimental and simulation study of target biasing effects on plasma transport in linear plasma device MPS-LD

Linear plasma devices (LPDs) are important experimental platforms for investigating plasma–material interactions (PMI). In PMI experiments, it has been found that applying a target bias not only effectively modifies the incident ion energy, but also induces significant changes in the electron density and electron temperature, whereby the evolution of these plasma parameters is primarily governed by plasma transport processes. However, at present, the physical process and mechanism underlying such bias-induced variations remain unclear. In this work, biasing experiments under argon plasma discharge conditions were first carried out on the MPS-LD device. For the corresponding experiments, an electric potential model was newly developed based on the BOUT++ LPD module, enabling self-consistent simulations of plasma transport under biased conditions. Numerical simulations were then performed to reproduce the experimental results and to validate the accuracy of the proposed model. Finally, by combining experimental measurements with numerical simulations, a bias-voltage scan was performed to investigate how the electron density and electron temperature vary with the bias voltage (U bias ). The results show that applying negative bias decreases the target electron density (n e,T ) while increasing the target electron temperature (T e,T ). In contrast, positive bias increases both n e,T and T e,T ; however, at high positive bias, n e,T first reaches a maximum and subsequently decreases with further increases in U bias . The underlying physical mechanisms are analyzed using particle flux, momentum, and energy conservation. It indicates that the applied bias regulates the parallel electric field, thereby changing ion and electron velocities, and consequently affecting the electron density. At high positive bias, the ion velocity is further influenced by ion viscosity, leading to the reversal in n e,T . Meanwhile, the enhanced parallel electric field drives stronger currents, significantly increasing ion–electron frictional work and converting the input bias power into electron energy, which raises the electron temperature. In conclusion, these results contribute to a deeper understanding of the effects and mechanisms of biasing on plasma transport in the MPS-LD device.

BOUT++ simulation↗
DOE OSTI2022

Flexible organic integrated electronics for self-powered multiplexed ocular monitoring

Smart contact lens has drawn extensive research interests due to the noninvasive real-time detection of the human body to provide biomedical information for health management. However, it has been difficult to accurately measure the physiological signals in tears, and the use of external power source has also hindered the future applications. Here, we demonstrated an organic electrochemical transistor based multiplexed sensors self-powered by the organic solar cells (OSCs). The integrated device was fabricated via simple process including solution blade-coating and thermal evaporation. OSCs were optimized to provide optimal operation voltage for the sensors that exhibit semilog-linear response to the glucose and calcium ions in tear fluids without any peripheral circuits. The sensing signals can be transmitted to the laptop wirelessly through a near filed communication unit. This integrated self-powered multiplexed sensing device will provide real-time monitoring of the biomarkers in tears, prospected to be installed on the smart contact lens for the early detection and diagnosis of diabetes.

36 MATERIALS SCIENCE↗