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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,693 records · Page 94
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite

Placing several electrodes at the edge of a micrometer-size Sri Lankan natural graphite sample at distances comparable to the size of the internal crystalline regions, we found record values for the change of the resistance with magnetic field. At low temperatures and at B ~ 21 T the magnetoresistance (MR) reaches ≈ 10 7 %. The MR values exceed by far all earlier reported ones for graphite and they are comparable or even larger (at T > 50 K) than the largest reported in solids including the Weyl semimetals. The origin of this large MR lies in the existence of highly conducting 2D interfaces aligned parallel to the graphene planes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Enhancement of Thermopower of TAGS-85 High-Performance Thermoelectric Material by Doping with the Rare Earth Dy

Enhancement of thermopower is achieved by doping the narrow-band semiconductor Ag 6.52 Sb 6.52 Ge 36.96 Te 50 (acronym TAGS-85), one of the best p-type thermoelectric materials, with 1 or 2% of the rare earth dysprosium (Dy). Evidence for the incorporation of Dy into the lattice is provided by X-ray diffraction and increased orientation-dependent local fields detected by 125 Te NMR spectroscopy. Since Dy has a stable electronic configuration, the enhancement cannot be attributed to 4f-electron states formed near the Fermi level. It is likely that the enhancement is due to a small reduction in the carrier concentration, detected by 125 Te NMR spectroscopy, but mostly due to energy filtering of the carriers by potential barriers formed in the lattice by Dy, which has large both atomic size and localized magnetic moment. The interplay between the thermopower, the electrical resistivity, and the thermal conductivity of TAGS-85 doped with Dy results in an enhancement of the power factor (PF) and the thermoelectric figure of merit (ZT) at 730 K, from PF = 28 μW cm -1 K -2 and ZT ≤ 1.3 in TAGS-85 to PF = 35 μW cm -1 K -2 and ZT ≥ 1.5 in TAGS-85 doped with 1 or 2% Dy for Ge. This makes TAGS-85 doped with Dy a promising material for thermoelectric power generation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Strain tuning and strong enhancement of ionic conductivity in SrZrO 3 -RE 2 O 3 (RE = Sm, Eu, Gd, Dy, and Er) nanocomposite films

Fast ion transport channels at interfaces in thin films have attracted great attention due to a range of potential applications for energy materials and devices, for, solid oxide fuel cells, sensors, and memories. Here, it is shown that in vertical nanocomposite heteroepitaxial films of SrZrO 3 –RE 2 O 3 (RE = Sm, Eu, Gd, Dy, and Er) the ionic conductivity of the composite can be tuned and strongly enhanced using embedded, stiff, and vertical nanopillars of RE 2 O 3 . With increasing lattice constant of RE 2 O 3 from Er 2 O 3 to Sm 2 O 3 , it is found that the tensile strain in the SrZrO 3 increases proportionately, and the ionic conductivity of the composite increases accordingly, by an order of magnitude. Lastly, the results here conclusively show, for the first time, that strain in films can be effectively used to tune the ionic conductivity of the materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Penta-Twinned Copper Nanorods: Facile Synthesis via Seed-Mediated Growth and Their Tunable Plasmonic Properties

When seed-mediated growth is used as a versatile approach to the synthesis of penta-twinned Cu nanorods with uniform diameters and controllable aspect ratios is reported. The success of this approach relies on our recent synthesis of uniform Pd decahedra, with sizes in the range of 6–20 nm. The Pd decahedral seeds can direct the heterogeneous nucleation and growth of Cu along the fivefold axis to produce nanorods with uniform diameters defined by the lateral dimension of the original seeds. Due to a large mismatch in the lattice constants between Cu and Pd (7.1%), the deposited Cu is forced to grow along one side of the Pd decahedral seed, generating a nanorod with an asymmetric distribution of Cu, with the Pd seed situated at one of the two ends. According to extinction spectra, the as-obtained Cu nanorods can be stored in water under the ambient conditions for at least six months without noticeable degradation. The resulting stability allows us to systematically investigate the size-dependent surface plasmon resonance properties of the penta-twinned Cu nanorods. With the nanorod transverse modes positioned at 560 nm, the longitudinal modes can be readily tuned from the visible to the near-infrared region by controlling the aspect ratio.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Synthesis and characterization of 2D molybdenum carbide (MXene)

Large scale synthesis and delamination of 2D Mo 2 CT x (where T is a surface termination group) has been achieved by selectively etching gallium from the recently discovered nanolaminated, ternary transition metal carbide Mo 2 Ga 2 C. Different synthesis and delamination routes result in different flake morphologies. The resistivity of free-standing Mo 2 CT x films increases by an order of magnitude as the temperature is reduced from 300 to 10 K, suggesting semiconductor-like behavior of this MXene, in contrast to Ti 3 C 2 T x which exhibits metallic behavior. At 10 K, the magnetoresistance is positive. Additionally, changes in electronic transport are observed upon annealing of the films. When 2 μm thick films are tested as electrodes in supercapacitors, capacitances as high as 700 F cm –3 in a 1 m sulfuric acid electrolyte and high capacity retention for at least 10,000 cycles at 10 A g –1 are obtained. Free-standing Mo 2 CT x films, with ≈8 wt% carbon nanotubes, perform well when tested as an electrode material for Li-ions, especially at high rates. In conclusion, at 20 and 131 C cycling rates, stable reversible capacities of 250 and 76 mAh g –1 , respectively, are achieved for over 1000 cycles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films

Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO 3 , which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO 3 (R' and T') in thin films grown on LaAlO 3 substrates with slightly different La 0.3 Sr 0.7 MnO 3 buffer layers. Our study shows that the polarization state formed during the growth acts as “imprint” on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. We observed reduction of the monoclinic domain size and found that it was largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T c ). Finally, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhanced Thermoelectric Performance in 18-Electron Nb 0.8 CoSb Half-Heusler Compound with Intrinsic Nb Vacancies

Typical 18-electron half-Heusler compounds, ZrNiSn and NbFeSb, are identified as promising high-temperature thermoelectric materials. NbCoSb with nominal 19 valence electrons, which is supposed to be metallic, is recently reported to also exhibit thermoelectric properties of a heavily doped n-type semiconductor. Here for the first time, it is experimentally demonstrated that the nominal 19-electron NbCoSb is actually the composite of 18-electron Nb 0.8 +δCoSb (0 ≤ δ < 0.05) and impurity phases. Single-phase Nb 0.8δ +CoSb with intrinsic Nb vacancies, following the 18-electron rule, possesses improved thermoelectric performance, and the slight change in the content of Nb vacancies has a profound effect on the thermoelectric properties. The carrier concentration can be controlled by varying the Nb deficiency, and the optimization of the thermoelectric properties can be realized within the narrow pure phase region. Benefiting from the elimination of impurity phases and the optimization of carrier concentration, thermoelectric performance is remarkably enhanced by ≈100% and a maximum zT of 0.9 is achieved in Nb 0.83 CoSb at 1123 K. Here, this work expands the family of half-Heusler thermoelectric materials and opens a new avenue for searching for nominal 19-electron half-Heusler compounds with intrinsic vacancies as promising thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

Electronic synaptic devices are important building blocks for neuromorphic computational systems that can go beyond the constraints of von Neumann architecture. Although two-terminal memristive devices are demonstrated to be possible candidates, they suffer from several shortcomings related to the filament formation mechanism including nonlinear switching, write noise, and high device conductance, all of which limit the accuracy and energy efficiency. Electrochemical three-terminal transistors, in which the channel conductance can be tuned without filament formation provide an alternative platform for synaptic electronics. In this work, an all-solid-state electrochemical transistor made with Li ion–based solid dielectric and 2D α-phase molybdenum oxide (α-MoO 3 ) nanosheets as the channel is demonstrated. These devices achieve nonvolatile conductance modulation in an ultralow conductance regime (<75 nS) by reversible intercalation of Li ions into the α-MoO 3 lattice. Based on this operating mechanism, the essential functionalities of synapses, such as short- and long-term synaptic plasticity and bidirectional near-linear analog weight update are demonstrated. Simulations using the handwritten digit data sets demonstrate high recognition accuracy (94.1%) of the synaptic transistor arrays. These results provide an insight into the application of 2D oxides for large-scale, energy-efficient neuromorphic computing networks.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Atom–by–Atom Fabrication of Single and Few Dopant Quantum Devices

Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom-by-atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid-state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate-controlled quantum sensing devices. Here, the key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout and coherent quantum manipulation are described.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures

Ferroelectric domain walls, topological entities separating domains of uniform polarization, are promising candidates as active elements for nanoscale memories. In such applications, controlled nucleation and stabilization of domain walls are critical. In this work, using in situ transmission electron microscopy and phase-field simulations, a controlled nucleation of vertically oriented 109° domain walls in (110)-oriented BiFeO 3 (BFO) thin films is reported. In the switching experiment, reversed domains that are nucleated preferentially at the nanoscale edges of the “crest and sag” pattern-like electrode under external bias subsequently grow into a stable stripe configuration. In addition, when triangular pockets (with an in-plane polarization component) are present, these domain walls are pinned to form stable flux-closure domains. Phase field simulations show that i) field enhancement at the edges of the electrode causes site-specific domain nucleation, and ii) the local electrostatics at the domain walls drives the formation of flux closure domains, thus stabilizing the striped pattern, irrespective of the initial configuration. The results demonstrate how flux closure pinning can be exploited in conjunction with electrode patterning and substrate orientation to achieve a desired topological defect configuration. These insights constitute critical advancements in exploiting domain walls in next generation ferroelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Polaronic Conductivity in Cr 2 Ge 2 Te 6 Single Crystals

We report that intrinsic 2D ferromagnetic semiconductors are an important class of materials for spin-charge conversion applications. Cr 2 Ge 2 Te 6 retains long-range magnetic order in the bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, a series of structural, magnetic, X-ray scattering, electronic, thermal transport and first-principles calculation studies are performed, which reveal that localized electronic charge carriers in Cr 2 Ge 2 Te 6 are dressed by the surrounding lattice and are involved in polaronic transport via hopping that is observed via magnetocrystalline anisotropy. This opens the possibility for manipulation of charge transport in Cr 2 Ge 2 Te 6 —based devices by electron–phonon- and spin–orbit coupling-based tailoring of polaron properties.

2D materials↗
DOE OSTI2023

Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal

Abstract In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. This study presents control of the correlation strength by tuning the degree of orbital overlap using picometer‐scale lattice engineering. This study illustrates how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated SrVO 3 model system. This study shows how tensile and compressive biaxial strain oppositely affect the SrVO 3 in‐plane and out‐of‐plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. The spectral weight redistribution under strain is derived and explained, which illustrates how high tensile strain drives the system toward a Mott insulating state. Implementation of such concepts can push correlated electron phenomena closer toward new solid‐state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer toward practical realization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗