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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,711 records · Page 95
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Helium gas bubble trapped in liquid helium in high magnetic field

High magnetic field magnets are used widely in the area of the condensed matter physics, material science, chemistry, geochemistry, and biology at the National High Magnetic Field Laboratory. New high field magnets of state-of-the-art are being pursued and developed at the lab, such as the current developing 32 T, 32 mm bore fully superconducting magnet. Liquid Helium (LHe) is used as the coolant for superconducting magnets or samples tested in a high magnetic field. When the magnetic field reaches a relatively high value the boil-off helium gas bubble generated by heat losses in the cryostat can be trapped in the LHe bath in the region where BzdBz/dz is less than negative 2100 T{sup 2}/m, instead of floating up to the top of LHe. Then the magnet or sample in the trapped bubble region may lose efficient cooling. In the development of the 32 T magnet, a prototype Yttrium Barium Copper Oxide coil of 6 double pancakes with an inner diameter of 40 mm and an outer diameter of 140 mm was fabricated and tested in a resistive magnet providing a background field of 15 T. The trapped gas bubble was observed in the tests when the prototype coil was ramped up to 7.5 T at a current of 200 A. This letter reports the test results on the trapped gas bubble and the comparison with the analytical results which shows they are in a good agreement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fast, multi-channel real-time processing of signals with microsecond latency using graphics processing units

Fast, digital signal processing (DSP) has many applications. Typical hardware options for performing DSP are field-programmable gate arrays (FPGAs), application-specific integrated DSP chips, or general purpose personal computer systems. This paper presents a novel DSP platform that has been developed for feedback control on the HBT-EP tokamak device. The system runs all signal processing exclusively on a Graphics Processing Unit (GPU) to achieve real-time performance with latencies below 8 μs. Signals are transferred into and out of the GPU using PCI Express peer-to-peer direct-memory-access transfers without involvement of the central processing unit or host memory. Tests were performed on the feedback control system of the HBT-EP tokamak using forty 16-bit floating point inputs and outputs each and a sampling rate of up to 250 kHz. Signals were digitized by a D-TACQ ACQ196 module, processing done on an NVIDIA GTX 580 GPU programmed in CUDA, and analog output was generated by D-TACQ AO32CPCI modules.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Titanium in silicon: Lattice positions and electronic properties

Secondary ion mass spectroscopy (SIMS) and deep level transient spectroscopy measurements were carried out on Czochralski (Cz)- and float-zone-grown (FZ) Si crystals, which were implanted with Ti ions and annealed in the temperature range 600–900 °C. The electrical behavior of Ti atoms is found to be different in Cz- and FZ-Si annealed at 650 °C, although the Ti SIMS profiles are similar. It is argued that interstitial Ti atoms (Ti{sub i}) in FZ-Si crystals interact with implantation-induced vacancies and take a substitutional position (Ti{sub s}). No energy levels which can be assigned to Ti{sub s} have been detected in this work or in previous experimental literature. However, previous calculations suggest that Ti{sub s} is a deep acceptor in Si. We show from density functional calculations that by taking proper account of interactions within the d-shell of the Ti impurity the electronic structure of Ti{sub s} has no levels in the band gap. The calculations show that Ti{sub i} is more energetically favorable than Ti{sub s} and that Ti{sub i} binds more strongly to the silicon vacancy than interstitial oxygen does, explaining the observed differences between FZ- and Cz-irradiated materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Measurement of effective sheath width around cutoff probe in low-pressure plasmas

Previous studies indicated that the measurement results of microwave probes can be improved by applying the adequate sheath width to their measurement models, and consequently the sheath width around the microwave probe tips has become very important information for microwave probe diagnostics. In this paper, we propose a method for measuring the argon plasma sheath width around the cutoff probe tips by applying the circuit model to the cutoff probe phase spectrum. The measured sheath width of the cutoff probe was found to be in good agreement with the floated sheath width calculated from the Child-Langmuir sheath law. The physical reasons for a discrepancy between the two measurements are also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Dielectric and magnetic investigations of GaFeO{sub 3} single crystals

Structural, dielectric and magnetic properties have been investigated for the polar ferrimagnet, GaFeO{sub 3} single crystals grown by optical floating zone technique. Phase formation was confirmed from X-ray diffraction. Hopping conduction mechanism of Fe{sup 2+} ions and oxygen vacancies contribute to the electric polarization and dielectric constant of the material. Disorderness in the cation site gives rise to the magnetic ordering and the splitting in the zero field cooled (ZFC) and field cooled (FC) magnetization curves reveals the movement of the domain walls.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Graphene as a surfactant for metal growth on solid surfaces: Fe on graphene/SiC(0001)

X-ray photoelectron spectroscopic and scanning tunneling microscopic results demonstrate that annealing of Fe/carbon-rich 6H-SiC(0001) surface between 650 and 750 °C leads to Fe intercalation under the surface carbon layer. Accompanied with the metal intercalation, the carbon nanomesh surface was transformed into a graphene surface. Moreover, the formed graphene layers always float out to the topmost surface even after deposition of more than 10 monolayer Fe, acting as a surfactant. Using graphene as the surfactant may not only promote the 2D growth but also can improve the film performance considering that graphene is stable and robust.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Spin switches for compact implementation of neuron and synapse

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Effects of emitted electron temperature on the plasma sheath

It has long been known that electron emission from a surface significantly affects the sheath surrounding that surface. Typical fluid theory of a planar sheath with emitted electrons assumes that the plasma electrons follow the Boltzmann relation and the emitted electrons are emitted with zero energy and predicts a potential drop of 1.03T{sub e}/e across the sheath in the floating condition. By considering the modified velocity distribution function caused by plasma electrons lost to the wall and the half-Maxwellian distribution of the emitted electrons, it is shown that ratio of plasma electron temperature to emitted electron temperature significantly affects the sheath potential when the plasma electron temperature is within an order of magnitude of the emitted electron temperature. When the plasma electron temperature equals the emitted electron temperature the emissive sheath potential goes to zero. One dimensional particle-in-cell simulations corroborate the predictions made by this theory. The effects of the addition of a monoenergetic electron beam to the Maxwellian plasma electrons were explored, showing that the emissive sheath potential is close to the beam energy only when the emitted electron flux is less than the beam flux.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Radio-frequency sheaths physics: Experimental characterization on Tore Supra and related self-consistent modeling

During the 2011 experimental campaign, one of the three ion cyclotron resonance heating (ICRH) antennas in the Tore Supra tokamak was equipped with a new type of Faraday screen (FS). The new design aimed at minimizing the integrated parallel electric field over long field lines as well as increasing the heat exhaust capability of the actively cooled screen. It proved to be inefficient for attenuating the radio-frequency (RF)-sheaths on the screen itself on the contrary to the heat exhaust concept that allowed operation despite higher heat fluxes on the antenna. In parallel, a new approach has been proposed to model self-consistently RF sheaths: the SSWICH (Self-consistent Sheaths and Waves for IC Heating) code. Simulations results from SSWICH coupled with the TOPICA antenna code were able to reproduce the difference between the two FS designs and part of the spatial pattern of heat loads and Langmuir probe floating potential. The poloidal pattern is a reliable result that mainly depends on the electrical design of the antenna while the radial pattern is on the contrary highly sensitive to loosely constrained parameters such as perpendicular conductivity that generates a DC current circulation from the private region inside the antenna limiters to the free scrape off layer outside these limiters. Moreover, the cantilevered bars seem to be the element in the screen design that enhanced the plasma potential.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ambipolar and non-ambipolar diffusion in an rf plasma source containing a magnetic filter

By placing a magnetic filter across a rectangular plasma source (closed at one end with a ceramic plate and an rf antenna, and terminated at the opposite end by a grounded grid), we experimentally investigate the effect of conducting and insulating source walls on the nature of the plasma diffusion phenomena. The use of a magnetic filter creates a unique plasma, characterized by a high upstream electron temperature (T{sub e{sub u}}∼5 eV) near the rf antenna and a low downstream electron temperature (T{sub e{sub d}}∼1 eV) near the grid, which more clearly demonstrates the role of the source wall materials. For conducting walls a net ion current to ground is measured on the grid, and the plasma potential is determined by a mean electron temperature within the source. For insulating walls the plasma potential is determined by the downstream electron temperature (i.e., V{sub p}∼5.2T{sub e{sub d}} in argon), and the net current to the grid is exactly zero. Furthermore, by inserting a small additional upstream conductor (that can be made floating or grounded through an external circuit switch), we demonstrate that the plasma potential can be controlled and set to a low (V{sub p}∼5.2T{sub e{sub d}}), or high (V{sub p}∼5.2T{sub e{sub u}}) value.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Numerical investigation of the double-arcing phenomenon in a cutting arc torch

A numerical investigation of the double-arcing phenomenon in a cutting arc torch is reported. The dynamics of the double-arcing were simulated by using a two-dimensional model of the gas breakdown development in the space-charge layer contiguous to the nozzle of a cutting arc torch operated with oxygen. The kinetic scheme includes ionization of heavy particles by electron impact, electron attachment, electron detachment, electron–ion recombination, and ion–ion recombination. Complementary measurements during double-arcing phenomena were also conducted. A marked rise of the nozzle voltage was found. The numerical results showed that the dynamics of a cathode spot at the exit of the nozzle inner surface play a key role in the raising of the nozzle voltage, which in turn allows more electrons to return to the wall at the nozzle inlet. The return flow of electrons thus closes the current loop of the double-arcing. The increase in the (floating) nozzle voltage is due to the fact that the increased electron emission at the spot is mainly compensated by the displacement current (the ions do not play a relevant role due to its low-mobility) until that the stationary state is achieved and the electron return flow fully-compensates the electron emission at the spot. A fairly good agreement was found between the model and the experiment for a spot emission current growth rate of the order of 7 × 10{sup 4} A/s.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Octahedral distortion induced magnetic anomalies in LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals

Single crystals of LaMn{sub 0.5}Co{sub 0.5}O{sub 3} belonging to the ferromagnetic-insulator and distorted perovskite class were grown using a four-mirror optical float zone furnace. The as-grown crystal crystallizes into an orthorhombic Pbnm structure. The spatially resolved 2D Raman scan reveals a strain-induced distribution of transition metal (TM)–oxygen (O) octahedral deformation in the as-grown crystal. A rigorous annealing process releases the strain, thereby generating homogeneous octahedral distortion. The octahedra tilt by reducing the bond angle TM-O-TM, resulting in a decline of the exchange energy in the annealed crystal. The critical behavior is investigated from the bulk magnetization. It is found that the ground state magnetic behavior assigned to the strain-free LaMn{sub 0.5}Co{sub 0.5}O{sub 3} crystal is of the 3D Heisenberg kind. Strain induces mean field-like interaction in some sites, and consequently, the critical exponents deviate from the 3D Heisenberg class in the as-grown crystal. The temperature-dependent Raman scattering study reveals strong spin-phonon coupling and the existence of two magnetic ground states in the same crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Near surface inversion layer recombination in Al{sub 2}O{sub 3} passivated n-type silicon

On n-type silicon, negatively charged surface passivation layers create a near surface recombination channel, which could significantly reduce the effective carrier lifetime at low injection levels (Δn < 10{sup 14 }cm{sup −3}). This effect is described by Shockley Read Hall recombination at homogeneously distributed defects in the silicon wafer. In the near surface region, fixed charges in the dielectric layer significantly change the carrier concentrations and the recombination rate of defects. Sentaurus device simulations show that the contribution of the near surface recombination to the effective carrier lifetime depends on the properties of the involved defects. The lifetime reduction is strongest when the involved defects have an energy level in the lower half of the band gap and a very high electron to hole capture cross section ratio. For the simulation, a very low defect density in the order of 10{sup 8 }cm{sup −3} is assumed, which is a realistic value in highly pure float zone silicon. Quasi-steady state photoconductance measurements on n-type silicon with Al{sub 2}O{sub 3} passivation are done and fitted with the recombination model. Very good correlation between simulation and experiment is achieved when the involved recombination centers have an electron to hole capture cross section ratio of 10{sup 7} and an energy level of −0.2 eV w.r.t. the intrinsic level. The simulated defect properties are discussed in respect of transition metal and doping related defects reported in literature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN{sub x} films by introducing phosphorous catalytic-doped layer

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Experimental observation of standing wave effect in low-pressure very-high-frequency capacitive discharges

Radial uniformity measurements of plasma density were carried out by using a floating double probe in a cylindrical (21 cm in electrode diameter) capacitive discharge reactor driven over a wide range of frequencies (27–220 MHz). At low rf power, a multiple-node structure of standing wave effect was observed at 130 MHz. The secondary density peak caused by the standing wave effect became pronounced and shifts toward the axis as the driving frequency further to increase, indicative of a much more shortened standing-wave wavelength. With increasing rf power, the secondary density peak shift toward the radial edge, namely, the standing-wave wavelength was increased, in good qualitative agreement with the previous theory and simulation results. At higher pressures and high frequencies, the rf power was primarily deposited at the periphery of the electrode, due to the fact that the waves were strongly damped as they propagated from the discharge edge into the center.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Communication: Mode bifurcation of droplet motion under stationary laser irradiation

The self-propelled motion of a mm-sized oil droplet floating on water, induced by a local temperature gradient generated by CW laser irradiation is reported. The circular droplet exhibits two types of regular periodic motion, reciprocal and circular, around the laser spot under suitable laser power. With an increase in laser power, a mode bifurcation from rectilinear reciprocal motion to circular motion is caused. The essential aspects of this mode bifurcation are discussed in terms of spontaneous symmetry-breaking under temperature-induced interfacial instability, and are theoretically reproduced with simple coupled differential equations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗