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At least 1,729 records · Page 96

A formal Fe III/V redox couple in an intercalation electrode

Iron redox cycling between low-valent oxidation states of Fe II and Fe III drives crucial processes in nature. The Fe II/III redox couple charge compensates the cycling of lithium iron phosphate, a positive electrode (cathode) for lithium-ion batteries. High-valent iron redox couples, involving formal oxidation higher than Fe III , could deliver higher electrochemical potentials and energy densities. However, because of the instability of high-valent Fe electrodes, they have proven difficult to probe and exploit in intercalation systems. Here, in this study, we report and characterize a formal Fe III/V redox couple by revisiting the charge compensation mechanism of (de)lithiation in Li 4 FeSbO 6 . Valence-sensitive experimental and computational core-level spectroscopy reveal a direct transition from Fe III (3d 5 ) to a negative-charge-transfer FeV (3d 5 L 2 ) ground state on delithiation, without forming Fe IV , or oxygen dimers. We identify that the cation ordering in Li 4 FeSbO 6 drives a templated phase transition to stabilize the unique Fe V species and demonstrate that disrupting cation ordering suppresses the Fe III/V redox couple. Exhibiting resistance to calendar aging, high operating potential and low voltage hysteresis, the Fe III/V redox couple in Li 4 FeSbO 6 provides a framework for developing sustainable, Fe-based intercalation cathodes for high-voltage applications.

Ramachandran, Hari [Stanford Univ., CA (United Sta↗

Observation of gapped state in rare-earth monopnictide HoSb

The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy, magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the G and X-symmetry points of the Brillouin zone, we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The interaction of reactants, intermediates and products with Cu ions in Cu-SSZ-13 NH3 SCR catalysts: An energetic and ab initio X-ray absorption modeling study

Copper-exchanged SSZ-13 (Cu-SSZ-13) provides excellent catalytic activity and hydrothermal stability in the selective catalytic reduction (SCR) of NOx by using NH3 as a reductant. In this contribution, we compare the most likely positions for Cu with a single charge compensating Al atom (ZCu), including the effect of the adsorption of reactants, intermediates and products of a NH3 SCR reaction by using first-principles calculations based on density functional theory. We find that the 6-membered ring (6MR) site is the most energetically favorable while the 8-membered ring (8MR) sites are less favorable with energy differences about 0.5 eV with respect to the 6MR site. Upon molecular adsorption, the energy differences between Cu in the 8MR and 6MR sites decreases and almost disappears, which means that the thermodynamic stability of ZCu with molecularly adsorbed species is nearly identical for Cu in different sites. Considering more complicated scenarios of NO (or CO) adsorption, we find that the co-adsorption of 2 NO (or 2 CO) molecules weakens their interaction with Cu, as well as their co-adsorption with OH and H2O. The X-ray absorption near edge structure (XANES) of Cu in Cu-SSZ-13 under different conditions was also modeled from first principles. We find that the pre-edge feature in the K-edge XANES of Cu in clean Cu-SSZ-13 with Cu in a 8MR site is induced by a 1s to 4s transition while there is no pre-edge peak when Cu is in a 6MR site. Molecular adsorption onto Cu in a 6MR or a 8MR site results in the same K-edge XANES. When NO is adsorbed onto Cu in SSZ-13, we find that the origin of the small pre-edge peak in the K-edge XANES lies in a 1s to 3d electron transition. On the other hand, when CO or N2 is adsorbed onto an isolated Cu atom in SSZ-13, a transition from the 1s state to the hybridized state of 3d and 4p results in a pre-edge peak in the K-edge of the XANES spectrum. It is also found that the edge position and intensity of the maximum peak of Cu K-edge XANES depend on the Cu locations and the adsorbed molecules. By studying the Cu K-edge XANES of ZCu with adsorption of species of different oxidizing power, we conclude that a higher oxidation state of Cu will result in a higher energy edge position in the Cu K-edge XANES. These results are expected to greatly aid our understanding of Cu-SSZ-13 SCR catalysts. This work was supported by institutional funds provided to JSM from the Voiland School of Chemical Engineering and Bioengineering. Financial support was also provided by the National Science Foundation GOALI program under contract Nos. CBET-1258717, CBET-1258715 and CBET-1258690. We thank Prof. Fabio Ribeiro, Mr. Atish Parekh, Prof. W. F. Schneider, Mr. Christopher Paolucci, Mr. Trunjoyo Anggara and Prof. Jeff Miller for stimulating discussions on the modeling of the XANES spectrum and Ms. Alyssa Hensley for her comments on the manuscript. J.Sz. acknowledges the financial support of this work by the U.S. Department of Energy (DOE), Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Program. A portion of the computer time for the computational work was performed using EMSL, a national scientific user facility sponsored by the Department of Energy’s Office of Biological and Environmental Research and located at PNNL. PNNL is a multi-program national laboratory operated for the US DOE by Battelle.

Zhang, Renqin↗

Acceptor doping in the proton conductor SrZrO 3

Perovskite zirconates such as SrZrO 3 exhibit improved proton solubility and conductivity when doped with trivalent cations substituting at the Zr site. In this work, we present a detailed study of Sc and Y dopants in SrZrO 3 based on first-principles, hybrid density-functional calculations. When substituting at the Zr site (ScZr, YZr), both dopants give rise to a single, deep acceptor level, where the neutral impurity forms a localized hole polaron state. The ε(0/-) charge transition levels are 0.60 eV and 0.58 eV above the valence-band maximum for ScZr and YZr, respectively. Under certain growth conditions, Sc and Y will form self-compensating donor species by substituting at the Sr site (ScSr, YSr), and this is detrimental to proton conductivity. Due to its larger ionic radius, Y exhibits a greater tendency than Sc to self-compensate at the Sr site. We also investigated the proton–dopant association. The binding energy of a proton to a negatively charged acceptor impurity is 0.41 eV for Sc and 0.31 eV for Y, indicating that proton transport is limited by trapping at impurity sites.

Weston, Leigh↗

Tuning the bandgap of Cs 2 AgBiBr 6 through dilute tin alloying

The promise of lead halide hybrid perovskites for optoelectronic applications makes finding less-toxic alternatives a priority. The double perovskite Cs 2 AgBiBr 6 ( 1 ) represents one such alternative, offering long carrier lifetimes and greater stability under ambient conditions. However, the large and indirect 1.95 eV bandgap hinders its potential as a solar absorber. Here we report that alloying crystals of 1 with up to 1 atom% Sn results in a bandgap reduction of up to ca. 0.5 eV while maintaining low toxicity. Crystals can be alloyed with up to 1 atom% Sn and the predominant substitution pathway appears to be a ~2 : 1 substitution of Sn 2+ and Sn 4+ for Ag + and Bi 3+ , respectively, with Ag + vacancies providing charge compensation. Spincoated films of 1 accommodate a higher Sn loading, up to 4 atom% Sn, where we see mostly Sn 2+ substitution for both Ag + and Bi 3+ . Density functional theory (DFT) calculations ascribe the bandgap redshift to the introduction of Sn impurity bands below the conduction band minimum of the host lattice. Using optical absorption spectroscopy, photothermal deflection spectroscopy, X-ray absorption spectroscopy, 119 Sn NMR, redox titration, single-crystal and powder X-ray diffraction, multiple elemental analysis and imaging techniques, and DFT calculations, we provide a detailed analysis of the Sn content and oxidation state, dominant substitution sites, and charge-compensating defects in Sn-alloyed Cs 2 AgBiBr 6 ( 1:Sn ) crystals and films. An understanding of heterovalent alloying in halide double perovskites opens the door to a wider breadth of potential alloying agents for manipulating their band structures in a predictable manner.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Atomistic simulation of PDADMAC/PSS oligoelectrolyte multilayers: overall comparison of tri- and tetra-layer systems

By employing large-scale molecular dynamics simulations of atomistically resolved oligoelectrolytes in aqueous solutions, we study in detail the first four layer-by-layer deposition cycles of an oligoelectrolyte multilayer made of poly(diallyl dimethyl ammonium chloride)/poly(styrene sulfonate sodium salt) (PDADMAC/PSS). The multilayers are grown on a silica substrate in 0.1 M NaCl electrolyte solutions and the swollen structures are then subsequently exposed to varying added salt concentration. We investigated the microscopic properties of the films, analyzing in detail the differences between three- and four-layer systems. Our simulations provide insights into the early stages of growth of a multilayer, which are particularly challenging for experimental observations. Here, we found rather strong complexation of the oligoelectrolytes, with fuzzy layering of the film structure. The main charge compensation mechanism is for all cases intrinsic, whereas extrinsic compensation is relatively enhanced for the layer of the last deposition cycle. In addition, we quantified other fundamental observables of these systems, such as the film thickness, water uptake, and overcharge fractions for each deposition layer.

74 ATOMIC AND MOLECULAR PHYSICS↗

On the Low Risk of SSR in Type III Wind Turbines Operating in Grid-Forming Control: Preprint

We have shown in a previous work that the risk of sub-synchronous resonance (SSR) between a wind power plant with Type III wind turbines and series-compensated transmission lines is low when the wind turbines in the plant are operated in grid-forming mode, instead of the standard grid-following mode. The fundamental mechanism behind the improved damping characteristics is explained in this paper by modeling the positive and negative sequence impedances of Type III wind turbines for GFM operation mode. It is discovered that the GFM control naturally acts against the negative resistance of Type III wind turbines that results from an interaction between the proportional gain of the rotor-side converter current controller and negative slip. The developed sequence impedance models and improved damping behavior are verified using PSCAD simulations of a 2.5-MW Type III GFM wind turbine. The modeling predictions are also supported by experimentally measuring the sequence impedance response of a 2.5-MW Type III wind turbine during operation in GFL and GFM modes.

grid-following turbine↗

Ellipsometry with polarisation analysis at cryogenic temperatures inside a vacuum chamber

In this paper we describe a new variant of null ellipsometry to determine thicknesses and optical properties of thin films on a substrate at cryogenic temperatures. In the PCSA arrangement of ellipsometry the polarizer and the compensator are placed before the substrate and the analyzer after it. Usually, in the null ellipsometry the polarizer and the analyzer are rotated to find the searched minimum in intensity. In our variant we rotate the polarizer and the compensator instead, both being placed in the incoming beam before the substrate. Therefore the polarisation analysis of the reflected beam can be realized by an analyzer at fixed orientation. We developed this method for investigations of thin cryogenic films inside a vacuum chamber where the analyzer and detector had to be placed inside the cold shield at a temperature of T≈ 90 K close to the substrate. All other optical components were installed at the incoming beam line outside the vacuum chamber, including all components which need to be rotated during the measurements. Our null ellipsometry variant has been tested with condensed krypton films on a highly oriented pyrolytic graphite substrate (HOPG) at a temperature of T≈ 25 K. We show that it is possible to determine the indices of refraction of condensed krypton and of the HOPG substrate as well as thickness of krypton films with reasonable accuracy.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Resistive wall mode active control physics design for KSTAR

As KSTAR H-mode operation approaches the region where the resistive wall mode (RWM) can be unstable, an important issue for future long pulse, high beta plasma operation is to evaluate RWM active feedback control performance using a planned active/passive RWM stabilization system on the device. In particular, an optimal design of feedback sensors allows mode stabilization up to the highest achievable β{sub N} close to the ideal with-wall limit, β{sub N}{sup wall}, with reduced control power requirements. The computed ideal n = 1 mode structure from the DCON code has been input to the VALEN-3D code to calculate the projected performance of an active RWM control system in the KSTAR three-dimensional conducting structure device geometry. Control performance with the midplane locked mode detection sensors, off-midplane saddle loops, and magnetic pickup coils is examined. The midplane sensors measuring the radial component of the mode perturbation is found to be strongly affected by the wall eddy current. The off-axis saddle loops with proper compensation of the prompt applied field are computed to provide stabilization at β{sub N} up to 86% of β{sub N}{sup wall} but the low RWM amplitude computed in the off-axis regions near the sensors can produce a low signal-to-noise ratio. The required control power and bandwidth are also estimated with varied noise levels in the feedback sensors. Further improvements have been explored by examining a new RWM sensor design motivated by the off-midplane poloidal magnetic field sensors in NSTX. The new sensors mounted off of the copper passive stabilizer plates near the device midplane show a clear advantage in control performance corresponding to achieving 99% of β{sub N}{sup wall} without the need of compensation of the prompt field. The result shows a significant improvement of RWM feedback stabilization using the new sensor set which motivates a future feedback sensor upgrade.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Self-oscillation of standing spin wave in ring resonator with proportional-integral-derivative control

We report on numerical analysis on self-oscillation of standing spin wave excited in a nanostructured active ring resonator, consists of a ferromagnetic nanowire with perpendicular anisotropy. The confined resonant modes are along the nanowire length. A positive feedback with proportional-integral-derivative gain control was adopted in the active ring. Stable excitation of the 1st order standing spin wave has been demonstrated with micromagnetic simulations, taking into account the thermal effect with a random field model. The stationary standing spin wave with a pre-determined set variable of precession amplitude was attained within 20 ns by optimizing the proportional-integral-derivative gain control parameters. The result indicates that a monochromatic oscillation frequency f{sub osc} is extracted from the initial thermal fluctuation state and selectively amplified with the positive feedback loop. The obtained f{sub osc} value of 5.22 GHz practically agrees with the theoretical prediction from dispersion relation of the magneto static forward volume wave. It was also confirmed that the f{sub osc} change due to the temperature rise can be compensated with an external perpendicular bias field H{sub b}. The observed quick compensation time with an order of nano second suggests the fast operation speed in the practical device application.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interaction of photosensitive surfactant with DNA and poly acrylic acid

In this paper, we investigate interactions and phase transitions in polyelectrolyte-surfactant complexes formed between a cationic azobenzene-containing surfactant and two types of polyelectrolytes: natural (DNA) or synthetic (PAA: poly acrylic acid). The construction of a phase diagram allowed distancing between four major phases: extended coil conformation, colloidally stable compacted globules, colloidal instability range, and surfactant-stabilized compact state. Investigation on the complexes’ properties in different phases and under irradiation with UV light provides information about the role of the surfactant's hydrophobic trans isomers both in the formation and destruction of DNA and PAA globules as well as in their colloidal stabilization. The trans isomer shows much stronger affinity to the polyelectrolytes than the hydrophilic cis counterpart. There is no need for complete compensation of the polyelectrolyte charges to reach the complete compaction. On contrary to the findings previously reported in the literature, we demonstrate – for the first time – complete polyelectrolyte compaction which occurs already at 20% of DNA (and at 50% of PAA) charge compensation. The trans isomer plays the main role in the compaction. The aggregation between azobenzene units in the photosensitive surfactant is a driving force of this process. The decompaction can be realized during UV light irradiation and is strongly influenced by the interplay between surfactant-surfactant and surfactant-DNA interactions in the compacted globules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Influence of the contact potential and space-charge effect on the performance of a Stoffel-Johnson design electron source for inverse photoemission spectroscopy

By imaging the spatial intensity distribution of the electrons from a Stoffel-Johnson (SJ) type low energy electron source for inverse photoemission spectroscopy (IPES), we find that the focus is distorted when the beam current exceeds the limiting value due to space charge effect. The space charge effect and the contact potential difference suppress the beam current at low energies (<10 eV). In this work, we show that these limitations of the SJ source can be overcome by compensation of the contact potential difference between the cathode and the lens electrodes and an uniform well focused electron beam with the set kinetic energy can be obtained. The size of the electron beam is around 1 mm full width at half maximum over the whole energy range of 5 to 30 eV generally used for IPES. The compensation of the contact potential difference also enhances the beam current substantially at low energies (<10 eV) and uniform beam current is achieved for the whole energy range. We find that the drift in the electron beam position is sensitive to the lens electrode separation and it is about 1 mm over the whole energy range. By measuring the n = 1 image potential state on Cu(100), we show that the resolution is better when the cathode filament current is set to lower values.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Open-loop correction for an eddy current dominated beam-switching magnet

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10{sup −4} to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10{sup −3}. By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10{sup −4}, which is an acceptable value, was achieved.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

36 MATERIALS SCIENCE↗

Quantum dot quantum cascade infrared photodetector

We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirped superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Defect correlated fluorescent quenching and electron phonon coupling in the spectral transition of Eu{sup 3+} in CaTiO{sub 3} for red emission in display application

This paper reports on the defect correlated self-quenching and spectroscopic investigation of calcium titanate (CaTiO{sub 3}) phosphors. A series of CaTiO{sub 3} phosphors doped with trivalent europium (Eu{sup 3+}) and codoped with potassium (K{sup +}) ions were prepared by the solid state reaction method. The X-ray diffraction results revealed that the obtained powder phosphors consisted out of a single-phase orthorhombic structure and it also indicated that the incorporation of the dopants/co-dopants did not affect the crystal structure. The scanning electron microscopy images revealed the irregular morphology of the prepared phosphors consisting out of μm sized diameter particles. The Eu{sup 3+} doped phosphors illuminated with ultraviolet light showed the characteristic red luminescence corresponding to the {sup 5}D{sub 0}→{sup 7}F{sub J} transitions of Eu{sup 3+}. As a charge compensator, K{sup +} ions were incorporated into the CaTiO{sub 3}:Eu{sup 3+} phosphors, which enhanced the photoluminescence (PL) intensities depending on the doping concentration of K{sup +}. The concentration quenching of Eu{sup 3+} in this host is discussed in the light of ion-ion interaction, electron phonon coupling, and defect to ion energy transfer. The spectral characteristics and the Eu-O ligand behaviour were determined using the Judd-Ofelt theory from the PL spectra instead of the absorption spectra. The CIE (International Commission on Illumination) parameters were calculated using spectral energy distribution functions and McCamy's empirical formula. Photometric characterization indicated the suitability of K{sup +} compensated the CaTiO{sub 3}:Eu{sup 3+} phosphor for pure red emission in light-emitting diode applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A synchrotron-radiation-based variable angle ellipsometer for the visible to vacuum ultraviolet spectral range

A rotating analyzer spectroscopic polarimeter and ellipsometer with a wide-range θ-2θ goniometer installed at the Insertion Device Beamline of the Metrology Light Source in Berlin is presented. With a combination of transmission- and reflection-based polarizing elements and the inherent degree of polarization of the undulator radiation, this ellipsometer is able to cover photon energies from about 2 eV up to 40 eV. Additionally, a new compensator design based on a CaF{sub 2} Fresnel rhomb is presented. This compensator allows ellipsometric measurements with circular polarization in the vacuum ultraviolet spectral range and thus, for example, the characterization of depolarizing samples. The new instrument was initially used for the characterization of the polarization of the beamline. The technical capabilities of the ellipsometer are demonstrated by a cohesive wide-range measurement of the dielectric function of epitaxially grown ZnO.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗