Search NASA⌕ Search

SEARCH · Search NASA

Results for “FERROMAGNETIC MATERIALS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,747 records · Page 97

Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection

The inverse spin Hall effect (ISHE) is a newly discovered, quantum mechanical phenomenon where an applied spin current results in the generation of an electrical voltage in the transverse direction. It is anticipated that the ISHE can provide a more simple way of measuring spin currents in spintronic devices. The ISHE was first observed in noble metals that exhibit strong spin-orbit coupling. However, recently, the ISHE has been detected in conventional semiconductors (such as Si and Ge), which possess weak spin-orbit coupling. This suggests that large-spin orbit coupling is not a requirement for observing the ISHE. In this paper, we are reporting the observation of the ISHE in an alternative semiconductor material, zinc oxide (ZnO) using all-electrical means. In our study, we found that when a spin-polarized current is injected into the ZnO film from a NiFe ferromagnetic injector via an MgO tunnel barrier layer, a voltage transverse to both the direction of the current as well as its spin-polarization is generated in the ZnO layer. The polarity of this voltage signal was found to flip on reversing the direction of the injected current as well as on reversing the polarization of the current, consistent with the predictions of the ISHE process. Through careful analysis of the ISHE data, we determined a spin-Hall angle of approximately 1.651 × 10{sup −2} for ZnO, which is two orders of magnitude higher than that of silicon. Observation of a detectable room-temperature ISHE signal in ZnO via electrical injection and detection is a groundbreaking step that opens a path towards achieving transparent spin detectors for next-generation spintronic device technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Single pair of Weyl fermions in the half-metallic semimetal EuC d 2 A s 2 [A Single Pair of Weyl Fermions in Half-metallic EuCd 2 As 2 Semimetal]

Materials with the ideal case of a single pair of Weyl points (WPs) are highly desirable for elucidating the unique properties of Weyl fermions. EuCd 2 As 2 is an antiferromagnetic topological insulator or Dirac semimetal depending on the different magnetic configurations. Using first-principles band-structure calculations, we show that inducing ferromagnetism in EuCd 2 As 2 can generate a single pair of WPs from splitting the single pair of antiferromagnetic Dirac points due to its half-metallic nature. Analysis with a low-energy effective Hamiltonian shows that a single pair of WPs is obtained in EuCd 2 As 2 because the Dirac points are very close to the zone center and the ferromagnetic exchange splitting is large enough to push one pair of WPs to merge and annihilate at Γ while the other pair survives. As a result, we predict that alloying with Ba at the Eu site can stabilize the ferromagnetic configuration and generate a single pair of Weyl points without application of a magnetic field.

36 MATERIALS SCIENCE↗

Exploring possible ferromagnetism of the LaAl O 3 / SrTi O 3 interface

We report on extensive investigations of magnetism at the n -type LaAl O 3 / SrTi O 3 interface performed by utilizing a spectrum of local and integrative analytical techniques: Scanning superconducting quantum interference device microscopy, polar Kerr magnetometry, ferromagnetic resonance, and magnetic torque magnetometry. The samples originated from the same wafers. For nominally fully oxidized samples, we find that the mere presence of the conducting interface does not induce magnetism to values exceeding already present magnetic signals originating from the substrates, irrespective of the measurement technique. With the controlled introduction of oxygen vacancies, however, the different analytical techniques with their inherently different sensitivities and potential interactions with possible magnetic moments in the samples yield different results concerning the existence of magnetism. These unexpected differences obtained with the various measurement techniques are a possible source of the disagreement in the literature about the existence of ferromagnetism at LaAl O 3 / SrTi O 3 interfaces.

36 MATERIALS SCIENCE↗

Manipulation of Magnetic Skyrmion in a 2D van der Waals Heterostructure via Both Electric and Magnetic Fields

As a promising candidate for the much-desired low power consumption spintronic devices, 2D magnetic van der Waals material also provides a versatile platform for the design and control of topological spin textures. In this work on WTe 2 /CrCl 3 bilayer van der Waals heterostructures, a complete Néel-type skyrmion–bimeron–ferromagnet phase transition is demonstrated, accompanied by the evolution of the topological number. This cyclic transition, mediated by a perpendicular magnetic field, is largely driven by the competition between the out-of-plane magnetocrystalline anisotropy and magnetic dipole–dipole interaction. In the presence of a driving current, the Néel-type skyrmion gains a higher velocity yet larger skyrmion Hall angle, in comparison to the bimeron. By incorporating a ferroelectric CuInP 2 S 6 monolayer as a substrate, writing and erasing of skyrmions may be regulated using a ferroelectric polarization. Here this work sheds light on a novel approach to the design and control of magnetic skyrmions on 2D van der Waals materials.

multiferroic↗

Half-metallicity and tetragonal distortion in semi-Heusler alloy FeCrSe

Full-potential linearized augmented plane wave methods are carried out to investigate the electronic structures and magnetic properties in semi-Heusler alloy FeCrSe. Results show that FeCrSe is half-metallic ferromagnet with the half-metallic gap 0.31 eV at equilibrium lattice constant. Calculated total magnetic moment of 2.00μ{sub B} per formula unit follows the Slater-Pauling rule quite well. Two kinds of structural changes are used to investigate the sensitivity of half-metallicity. It is found that the half-metallicity can be retained when lattice constant is changed by −4.56% to 3.52%, and the results of tetragonal distortion indicate the half-metallicity can be kept at the range of c/a ratio from 0.85 to 1.20. The Curie temperature, cohesive energy, and heat of formations of FeCrSe are also discussed.

36 MATERIALS SCIENCE↗

Brownmillerite Ca 2 Co 2 O 5 : Synthesis, Stability, and Re-entrant Single Crystal to Single Crystal Structural Transitions

We synthesized Ca 2 Co 2 O 5 in the brownmillerite form using a high-pressure optical-image floating zone furnace, and single crystals with dimensions up to 1.4×0.8×0.5 mm 3 were obtained. At room temperature, Ca 2 Co 2 O 5 crystallizes as a fully ordered brownmillerite variant in the orthorhombic space group Pcmb (No. 57) with unit cell parameters a=5.28960(10) Å, b=14.9240(2) Å, and c=10.9547(2) Å. Furthermore, with decreasing temperature, it undergoes re-entrant sequence of first-order structural phase transitions (Pcmb→ P2/c11→ P121/m1→ Pcmb) that is unprecedented among brownmillerites, broadening the family of space groups available to these materials and challenging current approaches for sorting the myriad variants of brownmillerite structures. Magnetic susceptibility data indicate antiferromagnetic ordering in Ca 2 Co 2 O 5 occurs near 240 K, corroborated by neutron powder diffraction. Below 140 K, Ca 2 Co 2 O 5 shows a weak ferromagnetic component directed primarily along the b axis, and it also exhibits thermal and magnetic history dependence in magnetization.

36 MATERIALS SCIENCE↗

Two-dimensional ferromagnetism in few-layer van der Waals crystals: Renormalized spin-wave theory and calculations

Dimensionality shapes the behavior of magnetism. Recent experiments on quasi two-dimensional (2D) van der Waals crystals have demonstrated unusual ferromagnetic orders and phase transitions distinct from their bulk counterparts. In this work, we present a method using renormalized spin-wave theory to study the ferromagnetic behavior in Heisenberg-type 2D ferromagnets, and apply our method to few-layer Cr 2 Ge 2 Te 6 crystals. Here we present the details of the method, which includes a self-consistent updating scheme of the spin-wave spectra at the Hartree-Fock level. The theoretical results obtained quantitatively explain the experimental measurements, showing strong dimensionality effects and sensitive external magnetic-field dependence which leads to easily tunable magnetism in this class of 2D materials. This method can be generalized to study various magnetic phenomena in other systems.

36 MATERIALS SCIENCE↗

The low-temperature heat capacity and thermodynamic properties of greigite (Fe 3 S 4 )

Heat capacity measurements provide important insights into the energetic, thermodynamic, and magnetic properties of materials. Herein we report the heat capacity of greigite (Fe 3 S 4 ) from 1.8 to 300 K. Greigite is a magnetic spinel mineral and through a ferromagnetic magnon term, C fsw = B fsw T 3/2 , ferrimagnetic ordering is observed in the low-temperature heat capacity. Using a set of theoretical fits of the experimental data, we calculate the thermodynamic functions, including the standard entropy ($Δ_{0}^{T}$S m °). Greigite is important in iron sulfide formation and reaction pathways in environmental, ore-forming, and technological settings and previous work has measured enthalpies $ΔH_{r}°$ of formation and decomposition to neighboring phases. In this work, the stability of greigite relative to the elements is demonstrated with a negative Gibbs energy ($ΔG_{r}°$) of formation and the stability relative to decomposition products of pyrrhotite (FeS 1.092 ) and pyrite (FeS 2 ) is demonstrated with a positive Gibbs energy ($ΔG_{r}°$) of decomposition. Values of the standard thermodynamic functions C p,m °, $Δ_{0}^{T}$S m °, $Δ_{0}^{T}$H m °, and Φ m ° are tabulated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Room temperature multiferroic properties of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film

Graphical abstract: - Highlights: • Chemical solution deposition of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}–NiFe{sub 2}O{sub 4} double layered thin film. • Studies on structural, electrical and multiferroic properties. • NiFe{sub 2}O{sub 4} acts as both resistive buffer layer and magnetic source. - Abstract: (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film was prepared on a Pt(111)/Ti/SiO{sub 2}/Si(100) substrate by a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies confirmed the formation of the distorted rhombohedral perovskite and the inverse spinel cubic structures for the (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film. The (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film exhibited well saturated ferromagnetic (2 M{sub r} of 18.1 emu/cm{sup 3} and 2H{sub c} of 0.32 kOe at 20 kOe) and ferroelectric (2P{sub r} of 60 μC/cm{sup 2} and 2E{sub c} of 813 kV/cm at 866 kV/cm) hysteresis loops with low order of leakage current density (4.5 × 10{sup −6} A/cm{sup 2} at an applied electric field of 100 kV/cm), which suggest the ferroelectric and ferromagnetic multi-layers applications in real devices.

36 MATERIALS SCIENCE↗

Tunable high Néel temperature and large anomalous Hall response in antiferromagnetic Weyl semimetal Mn 3 Sn 1− x Ga x thin films

Antiferromagnetic Weyl semimetals based on Mn 3 X(X = Ge, Sn, Ga) kagome compounds exhibit the same ferromagnetic-like responses, including anomalous Hall, Nernst, and magneto-optical effects, as recently discussed for altermagnets. Driven by the Berry curvature due to Weyl fermions, these materials show a disproportionately large magnitude of electromagnetic effects even in the absence of large magnetization. For applications it is crucial to realize these responses in a wide range of temperatures both below and above 300 K. While stoichiometric Mn 3 X materials do not offer optimal performance, we show that Mn 3 Sn 1−x Ga x sputtered films with a variable composition offers a tunable Néel temperature, T N ≈ 425 ± 6–500 ± 15 K, which is crucial for device applications, together with a large tunable anomalous Hall effect. Our thin film growth method enables continuous and precise control over the film composition between x = 0 and x = 1. Through a detailed magnetization and Hall transport, we establish the magnetic phase diagram for the hexagonal Mn 3 Sn 1−x Ga x . Our results reveal an enhanced T N and antichiral magnetic phase in Ga-doped Mn 3 Sn and an enhanced anomalous Hall magnitude in Sn-doped Mn 3 Ga compared to their stoichiometric undoped forms. Our work demonstrates a route to optimize the technologically relevant antiferromagnets for various applications.

Magnetic properties and materials↗

Giant negative thermal expansion in Fe-Mn-Ga magnetic shape memory alloys

Fe-Mn-Ga magnetic shape memory alloys can undergo martensitic transformation (MT) from a paramagnetic cubic phase to a ferromagnetic tetragonal phase. The MT is accompanied by a large volume change; yet, these alloys have never been explored for technological applications as negative thermal expansion (NTE) materials. Here, by careful chemical modification, tunable NTE characteristics including wide operating temperature windows (Delta T) and large negative linear coefficients of thermal expansion (alpha(l)) have been achieved in Fe 44-x Mn 28 Ga 28+x (x = 1, 2, and 2.5) alloys. Typically, a giant NTE Delta T of 81 K and alpha(l =) -50.2 x 10(-6) K-1 were realized in the Fe43Mn28Ga29 alloy upon cooling from 290 K. The relationships between the NTE features, the MT, and the substitution of Ga for Fe were discussed. Furthermore, the Fe-Mn-Ga alloys possess excellent mechanical properties, high electrical conductivity and high thermal conductivity. With these advantages, the Fe-Mn-Ga magnetic shape memory alloys show promising prospects for use as advanced NTE materials.

36 MATERIALS SCIENCE↗

4 d element induced improvement of structural disorder and development of weakly reentrant spin-glass behavior in NiRuMnSn

The pursuit of efficient spin polarization in quaternary Heusler alloys with the general formula XX'YZ (where X, X', and Y are transition metals and Z is a p-block element) has been a subject of significant scientific interest. While previous studies showed that isoelectronic substitution of a 4d element in place of a 3d element in quaternary Heusler alloys improves the half-metallic ferromagnetic characteristics, our research here, on the quaternary Heusler alloy NiRuMnSn, reveals a strikingly different scenario. In this study, we present a detailed structural analysis of the material using x-ray absorption fine structure and neutron diffraction techniques which confirms the formation of a single-phase compound with 50:50 site disorder between Ni and Ru atoms at 4c and 4d sites. Contrary to expectations, our density functional theory calculations suggest a considerable decrease in spin polarization even in the ordered structure. Additionally, we report on the compound's exceptional behavior, displaying a rare reentrant spin-glass property below ~ 60 K, a unique and intriguing feature for quaternary Heusler-type compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large anomalous Nernst effect and topological Nernst effect in the noncollinear antiferromagnet NdMn 2⁢ Ge 2

ThCr 2 Si 2 -type NdMn 2 Ge 2 was recently proposed to be a magnetic skyrmion candidate exhibiting the topological Hall effect. In this work, we report magnetic, electronic, and thermoelectric measurements for NdMn 2 Ge 2 single crystals. We show that, in the canted antiferromagnetic phase and the conical magnetic phase with a large out-of-plane ferromagnetic component, this system exhibits both an anomalous Nernst effect and a topological Nernst effect. Here we argue that NdMn 2 Ge 2 is a unique magnetic material, with its topological characteristics associated with the Berry phases in both real space and momentum space.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Revealing the Nature of Antiferroquadrupolar Ordering in Cerium Hexaboride: CeB 6

The cerium hexaboride (CeB 6 ) f -electron compound displays a rich array of low-temperature magnetic phenomena, including a “magnetically hidden” order, identified as multipolar in origin via advanced x-ray scattering. From first-principles electronic-structure results, we find that the antiferroquadrupolar (AFQ) ordering in CeB 6 arises from crystal-field splitting and yields a band structure in agreement with experiments. With interactions of p electrons between Ce and B 6 being small, the electronic state of CeB 6 is suitably described as Ce(4 f 1 ) 3+ (e – )(B 6 ) 2– . The AFQ state of orbital spins is caused by an exchange interaction induced through spin-orbit interaction, which also splits the J = 5/2 state into a Γ 8 ground state and a Γ 7 excited state. Within the smallest antiferromagnetic (AFM) (111) configuration, an orbital-ordered AFQ state appears during charge self-consistency, and it supports the appearance of a “hidden” order. Furthermore hydrostatic pressure (either applied or chemically induced) stabilizes the AFM (AFQ) states over a ferromagnetic one, as observed at low temperatures.

36 MATERIALS SCIENCE↗

Thickness dependent itinerant ferromagnetism in ultrathin Ba-doped SrRu O 3 films

The electronic and magnetic properties in AB⁢O 3 perovskite oxides are extremely sensitive to lattice structure, but also to dimensionality, such as the thickness in thin film-form. Here, we report the thickness-dependent electromagnetic properties of ultrathin epitaxially stabilized Sr 1-x ⁢Ba x ⁢Ru⁢O 3 (x = 0.08, 0.2) thin films on a SrTi⁢O 3 (001) substrate. The results reveal that the barium doping (0.08 ≤ x ≤ 0.20) reduces Ru⁢O 6 orthorhombic distortions existing in SrRu⁢O 3 and induces a tetragonal distortion, as evidenced by out-of-plane lattice expansion. A metal-to-insulator transition, accompanied by a ferromagnetic to nonmagnetic transition occurs with reducing film thickness from 10 to 3 unit cells for both x = 0.08 and 0.2, regardless of the doping level. The results suggest that the effects of compositional vacancies and surface/interface contributions introduced via dimensional confinement are more dominant than A-site chemical disorder or structural distortion for the loss of metallicity and ferromagnetism in ultra-thin epitaxial films.

36 MATERIALS SCIENCE↗

Spin-dependent dark matter scattering in quasi-two-dimensional magnets

We study the prospects of detecting dark matter coupled to the spin of the electron, such that it may scatter and excite magnons—collective excitations of electronic spins. We show that materials exhibiting long-range magnetic order where the spins are coupled only along a plane may act as directional dark matter detectors. These quasi-two-dimensional materials possess anisotropic dispersion relations and structure functions which induce a sidereal modulation in the excitation rate. We calculate the expected signal rate for some candidate (anti)ferromagnets, demonstrating a possible route to the direct detection of spin-dependent dark matter in the keV to MeV mass range.

Dark matter direct detection↗

Formation kinetics and thermodynamic stability of the Aurivillius compounds in Bi 4 Ti 3 O 12 –BiFeO 3 system

Abstract The Aurivillius compounds in the Bi 2 O 3 –Fe 2 O 3 –TiO 2 system, combining ferroelectric, semiconducting, and ferromagnetic properties, have attracted particular interest. Formation kinetics and thermodynamic stability are the fundamental knowledge needed for modeling and predicting the temporal microstructure and property evolution during materials processing but have not yet been addressed by quantitative experimental measurement. This article focuses on the Bi n +1 Fe n –3 Ti 3 O 3 n +3 Aurivillius compounds on the Bi 4 Ti 3 O 12 –BiFeO 3 tie‐line to elucidate the mechanisms and thermodynamic controls responsible for phase formation of compounds with various perovskite‐like layers. Five high‐purity Aurivillius compounds Bi 4 Ti 3 O 12 , Bi 5 FeTi 3 O 15 , Bi 6 Fe 2 Ti 3 O 18 , Bi 7 Fe 3 Ti 3 O 21 , and Bi 8 Fe 4 Ti 3 O 24 with integer n = 3–7 values were synthesized and their phase transformation properties and enthalpies of formation were studied by X‐ray diffraction in situ, high temperature differential scanning calorimetry, and high temperature oxide melt solution calorimetry. Thermodynamic stability of the compounds decreases with increasing n , and formation kinetics gradually slow down, demonstrating the inherent difficulty to synthesize pure Aurivillius compounds with n larger than 8. This difficulty was confirmed by an impurity phase coexisting with Bi 9 Fe 5 Ti 3 O 27 .

Gong, Weiping↗

Integrated, nonvolatile, high-speed analog random access memory

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

Katti, Romney R.↗