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At least 1,747 records · Page 97

Variations in γ′ formers and refractory elements for enhanced creep resistance and phase stability of an advanced Ni-based superalloy

The strong demands on increasing fuel efficiency have continuously driven the optimization of superalloys for high-performance applications. In this study, modifications to the chemistry and heat treatment of HAYNES® 282® alloy (H282) were performed by varying γ′ formers and refractory elements. It was found that increasing Ti and substituting W for some of the Mo in the newly designed alloy (Q) resulted in a significant improvement of creep resistance, up to 130% increase in creep life, compared to standard H282. It was found that Orowan loops and dislocation climb were the dominant creep deformation mechanisms in alloy Q, while extensive dislocation tangling as an additional configuration was observed in the baseline alloy. Moreover, phase stability investigations for up to 5000 h at 800 °C and 900 °C revealed a reduced formation of detrimental σ and μ phases in alloy Q when compared to H282. Atom-probe tomography (APT) revealed that the formation and growth of those phases were responsible for a decrease in Mo content in the matrix, thereby leading to a decrease in solid-solution strengthening in H282 over time. Furthermore, the coarsening of γ′ precipitates was retarded by the substitution of W for Mo, particularly under creep stress. The theoretical and experimental understanding of precipitation strengthening unraveled that higher optimal strengthening occurs at larger particle size for alloy Q, compared to the commercial formulation, further explaining the origin of enhanced creep resistance in the modified alloy.

36 MATERIALS SCIENCE↗

Evidence for I 2 loss from the perovskite–gas interface upon light-induced halide segregation

Sunlight-induced halide segregation in (CH 3 NH 3 )Pb(Br x I 1−x ) 3 (1 > x > 0.2), which limits obtainable voltages from solar cells with these perovskite absorbers, reverses upon resting in the dark. However, sustained illumination at ca. 1 sun opens a new decomposition pathway, leading to irreversible I 2 loss in an open system. We conclusively show I 2 off-gassing from halide-segregated (CH 3 NH 3 )Pb(Br 0.75 I 0.25 ) 3 by trapping gaseous I 2 and tracking the electronic conductivity of the perovskite, which increases from electron-doping as iodides are oxidized to iodine. Importantly, we show that this reaction occurs across the perovskite-air solid–gas interface, without confounding effects from solvent or reactive solid interfaces. This characterization was conducted under a nitrogen atmosphere, avoiding vacuum- and oxygen-driven I 2 loss pathways. Consistent observations of I 2 loss upon light-soaking CsPb(Br 0.75 I 0.25 ) 3 films show that this reaction is intrinsic to the inorganic framework. We propose that the disruption of iodide-rich domains in the halide-segregated films through I 2 loss can masquerade as a light-induced healing or apparent remixing of the segregated film, when in fact it leads to irreversible decomposition. Although I 2 off-gassing is less likely in bromide-rich solid solutions, light-induced halide segregation brings the iodides into proximity and forms electronic states that are energetically poised to trap and accumulate holes, providing a driving force for I 2 loss. Thus, even bromide-rich mixed-halide perovskite absorbers will benefit from I 2 -impermeable encapsulation for long-term stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Elucidating the reversible exsolution–dissolution behaviour of high-entropy oxides in crystalline and amorphous phases

High-entropy oxides (HEOs), as a subclass of high-entropy materials (HEMs), offer a versatile platform for catalysis by leveraging entropy-stabilized solid solutions with tunable compositions, lattice structures, and electronic properties. While exsolution–dissolution of metal species in crystalline HEOs has emerged as a promising strategy for reversible active sites regeneration, the dynamic behaviour of HEOs possessing amorphous nature remains under-explored, particularly the difference with crystalline counterparts. In this work, we systematically investigate the architecture-dependent exsolution–dissolution behavior of HEOs by comparing a crystalline-phase HEO (c-HEO) and an amorphous-phase HEO (a-HEO), both comprising Ni, Mg, Cu, Zn, and Co as principal metal elements. Using a combination of in situ variable-temperature X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), electron microscopy, and in situ CO diffuse reflectance infrared Fourier transform spectroscopy (CO-DRIFTS), the structural evolution of the two HEO phases under redox conditions was elucidated. Both materials exhibit reversible exsolution of metallic species or alloys in reducing environments, followed by re-incorporation into the host lattice upon oxidation. Remarkably, the a-HEO demonstrates more facile and dynamic self-healing behavior, with alloy exsolution and dissolution occurring under milder conditions because of its enhanced reducibility and structural disorder. This study provides critical insights into the design of next-generation regenerable catalysts based on amorphous HEOs, highlighting the role of phase structure in governing reversible metal-site formation dynamics and catalytic performance.

Wang, Qingju [Univ. of Tennessee, Knoxville, TN (U↗

In situ electric field X-ray total scattering reveals composition-dependent electromechanical strain mechanisms in (1 − x )BiFe 2/8 Ti 3/8 Mg 3/8 O 3 – x PbTiO 3 ceramics

Ferroelectric materials find many applications in energy and aerospace industries. A major challenge for ferroelectric materials is maintaining their properties at elevated temperatures. The (1 − x )BiFe 2/8 Ti 3/8 Mg 3/8 O 3 – x PbTiO 3 (BFTM–xPT) ferroelectric solid solution is a promising candidate for high-temperature applications as it has a high piezoelectric response while also maintaining its ferroelectric phase until a high Curie temperature (T C ) of 650 °C. In this work, we investigate the piezoelectric mechanism in BFTM–xPT, a novel high-T C ferroelectric ceramic. To elucidate the origin of its enhanced piezoelectric performance, relative to other piezoceramics of similar T C , in situ electric field X-ray total scattering experiments were performed. Total scattering combines Bragg scattering (diffraction) and diffuse scattering (pair distribution function), providing insight on various length scales. With information spanning different length scales, extrinsic contributions (i.e., domain wall motion and interphase boundary motion) can be separated from intrinsic contributions (i.e., piezoelectric lattice strain). We show that, for compositions within the morphotropic phase boundary (MPB, x = 0.325), the piezoelectric response is dominated by intrinsic piezoelectric lattice strain, whereas outside the MPB (x = 0.375) the major component of the piezoelectric response is from extrinsic mechanisms including an electric-field-induced phase transition and tetragonal domain wall motion. This article reveals that the origin of piezoelectric response in BFTM–xPT is composition-dependent and shows that high-performance materials may also be located outside the MPB. These findings can help guide material design to optimize properties for specific applications.

Richtik, Brooke N. [University of Calgary, AB (Can↗

Controlling compositional homogeneity and crystalline orientation in Bi 0.8 Sb 0.2 thermoelectric thin films [Control of composition and crystallinity in Bi 0.8 Sb 0.2 thermoelectric thin films].

Controlling alloy composition, crystalline quality, and crystal orientation is necessary to achieve high thermoelectric performance in Bi 1-x Sb x thin films. These microstructural attributes are demonstrated in this letter via co-sputter deposition of Bi and Sb metals on Si/SiO 2 substrates followed by ex-situ post anneals ranging from 200 – 300 °C in forming gas with rapid cooling to achieve orientation along the trigonal axis. We show with cross-sectional transmission electron microscopy and energy-dispersive X-ray spectrometry that 50 – 95% of the Sb segregates at the surface upon exposure to air during transfer. This then forms a nanocrystalline Sb 2 O 3 layer upon annealing, leaving the bulk of the film primarily Bi metal which is a poor thermoelectric material. We demonstrate a SiN capping technique to eliminate Sb segregation and preserve a uniform composition throughout the thickness of the film. Given that the Bi 1-x Sb x solid solution melting point depends on the Sb content, the SiN cap allows one to carefully approach but not exceed the melting point during annealing. This leads to the strong orientation along the trigonal axis and high crystalline quality desired for thermoelectric applications.

36 MATERIALS SCIENCE↗

Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Room temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Lattice thermal transport in group II-alloyed PbTe

Here, PbTe, one of the most promising thermoelectric materials, has recently demonstrated a thermoelectric figure of merit ( ZT ) of above 2.0 when alloyed with group II elements. The improvements are due mainly to significant reduction of lattice thermal conductivity (κ ι ), which was in turn attributed to nanoparticle precipitates. However, a fundamental understanding of various phonon scattering mechanisms within the bulk alloy is still lacking. In this work, we apply the newly-developed density-functional-theory-based compressive sensing lattice dynamics approach to model lattice heat transport in PbTe, MTe, and Pb 0.94 M 0.06 Te (M = Mg, Ca, Sr, and Ba) and compare our results with experimental measurements, with focus on the strain effect and mass disorder scattering. We find that (1) CaTe, SrTe, and BaTe in the rock-salt structure exhibit much higher kappa(l) than PbTe, while MgTe in the same structure shows anomalously low κ ι ; (2) lattice heat transport of PbTe is extremely sensitive to static strain induced by alloying atoms in solid solution form; (3) mass disorder scattering plays a major role in reducing κ ι for Mg/Ca/Sr-alloyed PbTe through strongly suppressing the lifetimes of intermediate- and high-frequency phonons, while for Ba-alloyed PbTe, precipitated nanoparticles are also important.

36 MATERIALS SCIENCE↗

Designing pseudocubic perovskites with enhanced nanoscale polarization

A crystal-chemical framework has been proposed for the design of pseudocubic perovskites with nanoscale ferroelectric order, and its applicability has been demonstrated using a series of representative solid solutions that combined ferroelectric (K 0.5 Bi 0.5 TiO 3 , BaTiO 3 , and PbTiO 3 ) and antiferroelectric (Nd-substituted BiFeO 3 ) end members. The pseudocubic structures obtained in these systems exhibited distortions that were coherent on a scale ranging from sub-nanometer to tens of nanometers, but, in all cases, the macroscopic distortion remained unresolvable even if using high-resolution X-ray powder diffraction. Different coherence lengths for the local atomic displacements account for the distinctly different dielectric, ferroelectric, and electromechanical properties exhibited by the samples. The guidelines identified provide a rationale for chemically tuning the coherence length to obtain the desired functional response.

36 MATERIALS SCIENCE↗

Melts of CrCoNi-based high-entropy alloys: Atomic diffusion and electronic/atomic structure from ab initio simulation

High-entropy alloys (HEAs) are an emerging class of advanced structural alloys under extensive research; yet, the properties of the liquid states of these materials, which are relevant to their processing, have been far less explored. In this work, we utilize ab initio molecular dynamics simulations to investigate the melt properties of a representative HEA—the Cantor alloy—and its derivatives: CrMnFeCoNi, CrFeCoNi, and CrCoNi. The atomic dynamics of these melts at various temperatures are investigated, specifically to analyze their electronic and atomic structures, including charge transfer, pair distribution functions, and short-range order. Results are compared with existing information for the liquids of metallic glasses, which also typically contain multiple principal elements, but retain the amorphous state under moderate to fast cooling rates. The present results provide insights into the structural and bonding factors favoring solidification to single-phase solid solutions in HEAs.

36 MATERIALS SCIENCE↗

Mechanisms underpinning the ultrahigh piezoelectricity in Sm-doped 0.705Pb(Mg 1/3 Nb 2/3 )O 3 -0.295PbTiO 3 : Temperature-induced metastable local structure and field-induced polarization rotation

The solid solution of (100 – x )%Pb(Mg 1/3 Nb 2/3 )O 3 - x %PbTiO 3 (PMN- x PT) exhibits ultrahigh piezoelectric and dielectric properties near the morphotropic phase boundary compositions and, as such, has been extensively studied in recent years. Recently, 2.5 mol. % Sm-doped PMN-29PT polycrystalline ceramics were reported to possess the highest piezoelectric coefficients (~1500 pC/N) among all reported piezoceramics, but the atomic-scale mechanisms for such high piezoelectric properties are not yet clear. Here, in situ X-ray diffraction and X-ray total scattering measurements during the application of an electric field, together with in situ total scattering measurement at different temperatures, were conducted for 2.5 mol. % Sm-doped PMN-29.5PT (2.5Sm-PMN-29.5PT). Both the largest field-induced strain and the piezoelectric response were found in the crystallites oriented with their &#12296 100 &#12297 PC directions parallel to the applied field. The local Pb displacement was analyzed using the reverse Monte Carlo method based on the pair distribution functions at different temperatures, where a temperature-induced directional change of Pb displacement was observed. Based on the experimental observations, a field-induced polarization rotation is suggested to be the dominant mechanism for the ultrahigh piezoelectricity of the 2.5Sm-PMN-29.5PT ceramic, while the ease of polarization rotation is possibly attributed to the temperature-induced metastable local monoclinic symmetries with their polar axes close to &#12296 111 &#12297 PC .

36 MATERIALS SCIENCE↗

Temperature-independent giant dielectric response in transitional BaTiO 3 thin films

Ferroelectric materials exhibit the largest dielectric permittivities and piezoelectric responses in nature, making them invaluable in applications from supercapacitors or sensors to actuators or electromechanical transducers. The origin of this behavior is their proximity to phase transitions. However, the largest possible responses are most often not utilized due to the impracticality of using temperature as a control parameter and to operate at phase transitions. This has motivated the design of solid solutions with morphotropic phase boundaries between different polar phases that are tuned by composition and that are weakly dependent on temperature. Thus far, the best piezoelectrics have been achieved in materials with intermediate (bridging or adaptive) phases. But so far, complex chemistry or an intricate microstructure has been required to achieve temperature-independent phase-transition boundaries. Here, we report such a temperature-independent bridging state in thin films of chemically simple BaTiO3. A coexistence among tetragonal, orthorhombic, and their bridging low-symmetry phases are shown to induce continuous vertical polarization rotation, which recreates a smear in-transition state and leads to a giant temperature-independent dielectric response. The current material contains a ferroelectric state that is distinct from those at morphotropic phase boundaries and cannot be considered as ferroelectric crystals. We believe that other materials can be engineered in a similar way to contain a ferroelectric state with gradual change of structure, forming a class of transitional ferroelectrics. Similar mechanisms could be utilized in other materials to design low-power ferroelectrics, piezoelectrics, dielectrics, or shape-memory alloys, as well as efficient electro- and magnetocalorics.

36 MATERIALS SCIENCE↗

Ferroelectric barium titanate derivatives containing Mo and Mg for transparent photovoltaic applications

Using first-principles methods, we investigate the electronic properties of the [Ba(Mo 1/2 ,Mg 1/2 )O 3 ] x -[BaTiO 3 ] 1-x solid solution derived from barium titanate as a potential candidate to be used in photovoltaic devices. Focusing on the bandgap and its origin, we study the effect of different possible Mo and Mg contents, arrangements, and phases of [Ba(Mo 1/2 ,Mg 1/2 )O 3 ]x-[BaTiO 3 ] 1-x . We find that [Ba(Mo 1/2 ,Mg 1/2 )O 3 ] 0.25 -[BaTiO 3 ] 0.75 is a viable candidate for use in transparent photovoltaics due to its energy bandgap of 2.6 eV in the rhombohedral phase. In all cases, [Ba(Mo 1/2 ,Mg 1/2 )O 3 ]x-[BaTiO 3 ] 1-x materials exhibit spontaneous polarization that allows the exploitation of the bulk photovoltaic effect and in principle may allow high power conversion efficiency exceeding the Shockley-Queisser limit for these materials.

14 SOLAR ENERGY↗

Photoinduced phase separation in the lead halides is a polaronic effect

We present a perspective on recent observations of the photoinduced phase separation of halides in multi-component lead-halide perovskites. The spontaneous phase separation of an initial homogeneous solid solution under steady-state illumination conditions is found experimentally to be reversible, stochastic, weakly dependent on morphology, yet strongly dependent on composition and thermodynamic state. Regions enriched in a specific halide species that form upon phase separation are self-limiting in size, pinned to specific compositions, and grow in number in proportion to the steady-state carrier concentration until saturation. These empirical observations of robustness rule out explanations based on specific defect structures and point to the local modulation of an existing miscibility phase transition in the presence of excess charge carriers. A model for rationalizing existing observations based on the coupling between composition, strain, and charge density fluctuations through the formation of polarons is reviewed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Prospects for n -type doping of (Al x Ga 1– x ) 2 O 3 alloys

Here we systematically explore the properties of group-IV (C, Si, Ge, and Sn) and transition metal (Hf, Zr, and Ta) dopants substituting on the cation site in (Al x Ga 1– x ) 2 O 3 (AlGO) alloys using first-principles calculations with a hybrid functional. In Ga 2 O 3 , each of these dopants acts as a shallow donor. In Al 2 O 3 , they are deep defects characterized by the formation of either DX centers or positive- U (+/0) levels. Combining our calculations of dopant charge-state transition levels with information of the AlGO alloy band structure, we estimate the critical Al composition at which each dopant transitions from being a shallow to a deep donor. We identify Si to be the most efficient dopant to achieve n -type conductivity in high Al-content AlGO alloys, acting as a shallow donor over the entire predicted stability range for AlGO solid solution alloys.

36 MATERIALS SCIENCE↗

Density functional theory calculation of helium segregation and decohesion effect in W110/Ni111 interphase boundary

Density functional theory (DFT) is employed to study the preferential distribution and decohesion effect of He in a W-NiFe composite consisting of W particles embedded in an Ni-based solid solution matrix. A slab containing {110}<100>W//{111}<110>Ni interface is employed as a surrogate model for the W-NiFe system. Firstly, the fracture energy of the W/Ni interphase boundary (IB) (4.37 J/m 2 ) is higher than the cleavage energy of Ni{111} (3.82 J/m^2) and lower than the cleavage energy of W{110} (6.60 J/m 2 ). The comparison shows that the cohesion of the IB is stronger than the Ni{111} planes that are away from the IB. However, the cohesion between the Ni{111} planes adjacent to the IB is found to be the weakest in this system, with a cleavage energy of 3.11 J/m 2 . Subsequently, formation energy of He is calculated in the Ni slab, W slab, and various interstitial sites in the IB. The DFT calculations show that He is significantly more stable in Ni than in W, by about 1.75 eV. Interestingly, He does not prefer to segregate at the IB as compared to bulk Ni. Nevertheless, it prefers to segregate to the region between the Ni{111} planes adjacent to the IB, and decreases the cohesion of the already weakest region. Based on an estimated amount of He gas production in 5 years under first wall neutron irradiation (neutron flux of 1.04x10 15 n/cm 2 /s), the He will decrease the cleavage energy of the weakest region by 21.2%, 15.4%, and 12.2% at 800, 1000, and 1200 C, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN 2 and MgSiN 2

The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II–IV nitride materials that have recently become available, namely, ZnGeN 2 and MgSiN 2 . We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the [$1\bar{1}00$] by lattice matching to ZnGeN 2 and MgSiN 2 results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN 2 and MgSiN 2 induces an increase in the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Further, examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn 0.75 Ge 0.75 Mg 0.25 Si 0.25 N 2 would already increase the hole mobility by 160%.

36 MATERIALS SCIENCE↗