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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Enhanced emission of quantum dots embedded within the high-index dielectric regions of photonic crystal slabs

We demonstrate a method for combining sputtered TiO{sub 2} deposition with liquid phase dip-coating of a quantum dot (QD) layer that enables precise depth placement of QD emitters within a high-index dielectric film, using a photonic crystal (PC) slab resonator to demonstrate enhanced emission from the QDs when they are located at a specific depth within the film. The depth of the QDs within the PC is found to modulate the resonant wavelength of the PC as well as the emission enhancement efficiency, as the semiconducting material embedded within the dielectric changes its spatial overlap with the resonant mode.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfO{sub x} film

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfO{sub x} film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfO{sub x} matrix. Pt/Ni-NCs embedded HfO{sub x}/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 10{sup 12} electrons/cm{sup 2}, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 10{sup 4} cycles and excellent retention performance of 10{sup 5} s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Insights on semiconductor-metal transition in indium-doped zinc oxide from x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and x-ray diffraction

ZnO thin films doped with various amounts of In impurities were prepared by magnetron sputtering at a substrate temperature of 150°C. The shift in optical bandgap of the In-doped ZnO films is studied as a function of carrier concentration. Nominally doped ZnO films exhibit an increase in the measured optical band gap known as the Burstein-Moss effect. Dominant band gap narrowing is observed with increased doping. XPS and TOFSIMS analyses confirm that In is incorporated in the ZnO material. The In 3d peaks show that no metallic In is present as a result of heavy doping. The XRD phase analysis shows a preferential c-axis growth but a shift of the ZnO (002) peak to lower 2-theta values with increasing FWHM as the carrier concentration increases indicates the decline in the quality of crystallinity. An elongation of the c lattice constant is also observed and is likely to be caused by intersitital In as the amount of In dopants increases. The incorporation of In induces a semiconductor-metal transition between the carrier concentrations of 3.58 – 5.61×10{sup 19} cm{sup −3} and structural changes in the ZnO host material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

The effect of synthesis time on graphene growth from palm oil as green carbon precursor

Graphene is the new material that arises after carbon nanotubes (CNTs) era and has extraordinary optical, electronic and mechanical properties compared to CNTs. The 2D graphene is the sp{sup 2} carbon allotropes compared to other dimensionality. It also can be in three forms that are zero-dimensional, one-dimensional or three-dimensional. The different dimensionality also called fullerenes, nanotubes and graphite. Therefore, the graphene is known as centre potential materials in expanding research area than others ever. The 2 cm × 2 cm silicon wafer was seeded with nickel (Ni) at different thickness by using sputter coater. The palm oil, carbon source, was placed in the precursor furnace and the silicon was placed in the second furnace (deposition furnace). The palm oil will mix with Nitrogen gas was used as carrier gas in the CVD under certain temperature and pressure to undergo pyrolysis proses. The deposition temperature was set at 1000 °C. The deposition time varied from 3 minutes, 5 minutes and 7 minutes. The graphene was growth at ambient pressure in the CVD system. Electron microscopy and Raman Spectrometer revealed the structural properties and surface morphology of the grapheme on the substrate. The D and G band appear approximately at 1350 cm{sup −1} and 1850 cm{sup −1}. It can be concluded that the growth of graphene varies at different deposition time.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Development of low-cost, high-performance non-evaporable getter (NEG) pumps

Low-cost, high-performance non-evaporable getter (NEG) pumps were constructed using commercial NEG pills comprising 70 wt% Zr, 24.6 wt% V, and 5.4 wt% Fe, a conflat flange with an outer diameter of 70, 152, or 203 mm (DN 40 CF, DN 100 CF, and DN 160 CF, respectively), and a tantalum heater. After activation at 400 °C for 30 min, the pumping speeds of a DN 40 CF NEG pump measured with the orifice method were 47–40, 8–6, 24–17, and 19–15 L/s for H{sub 2}, N{sub 2}, CO, and CO{sub 2} gasses, respectively. NEG pumps using DN 100 CF and DN 160 CF were also developed, and their pumping speeds are estimated. These NEG pumps are favorable alternatives to sputtering ion pumps in VSX beamlines because they do not produce hydrocarbons except during the activation period. The NEG pumps can also be used for accelerators, front ends, end stations, and differential pumping systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

The confinement of phonon propagation in TiAlN/Ag multilayer coatings with anomalously low heat conductivity

TiAlN/Ag multilayer coatings with a different number of bilayers and thicknesses of individual layers were fabricated by DC magnetron co-sputtering. Thermal conductivity was measured in dependence of Ag layer thickness. It was found anomalous low thermal conductivity of silver comparing to TiAlN and Ag bulk standards and TiAlN/TiN multilayers. The physical nature of such thermal barrier properties of the multilayer coatings was explained on the basis of reflection electron energy loss spectroscopy. The analysis shows that nanostructuring of the coating decreases the density of states and velocity of acoustic phonons propagation. At the same time, multiphonon channels of heat propagation degenerate. These results demonstrate that metal-dielectric interfaces in TiAlN/Ag coatings are insurmountable obstacles for acoustic phonons propagation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρ{sub c}) is 1.97 × 10{sup −3} Ω·cm{sup 2}, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA, which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Formation of blade and slot die coated small molecule multilayers for OLED applications studied theoretically and by XPS depth profiling

Slot die coaters especially designed for low material consumption and doctor blades were used to process small molecule solutions for organic light-emitting diodes (OLEDs). Optimum process parameters were developed for the large-scale coating techniques to generate stable single and multiple layers only a few nanometers thick. Achieving a multilayer architecture for solution-processed OLEDs is the most challenging step. X-ray photoelectron spectroscopy sputter depth profiling was performed to determine defined interfaces between coated organic layers. Commercially available small molecules NPB (N,N’-Di(1-naphthyl)-N,N’-diphenyl-(1,1’-biphenyl)-4,4’-diamine) and BAlq (Bis(8-hdroxy-2methylquinoline)-(4-phenylphenoxy)aluminum), originally developed for vacuum deposition, were used as hole, respectively electron transport material. Defined double-layers were processed with both scalable coating methods using the orthogonal solvent approach. The use of non-orthogonal solvents resulted in complete intermixing of the material. The results are explained by calculations of solubilities and simulating drying and diffusion kinetics of the small molecule solutions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Band gap engineering of N-alloyed Ga{sub 2}O{sub 3} thin films

The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH{sub 3} and Ar gas for 60 minutes. Then they were annealed in NH{sub 3} ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

The influence of projectile ion induced chemistry on surface pattern formation

We report the critical role of projectile induced chemical inhomogeneity on surface nanostructure formation. Experimental inconsistency is common for low energy ion beam induced nanostructure formation in the presence of uncontrolled and complex contamination. To explore the precise role of contamination on such structure formation during low energy ion bombardment, a simple and clean experimental study is performed by selecting mono-element semiconductors as the target and chemically inert or reactive ion beams as the projectile as well as the source of controlled contamination. It is shown by Atomic Force Microscopy, Cross-sectional Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy measurements that bombardment of nitrogen-like reactive ions on Silicon and Germanium surfaces forms a chemical compound at impact zones. Continuous bombardment of the same ions generates surface instability due to unequal sputtering and non-uniform re-arrangement of the elemental atom and compound. This instability leads to ripple formation during ion bombardment. For Argon-like chemically inert ion bombardment, the chemical inhomogeneity induced boost is absent; as a result, no ripples are observed in the same ion energy and fluence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (R{sub N}), and substrate temperature (T{sub S}). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % R{sub N}. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB{sub 2} phase within the coatings. The T{sub S}, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors

We grew In-rich In{sub x}Ga{sub 1-x}N films on yttria-stabilized zirconia (YSZ) substrates at low temperatures by pulsed sputtering deposition. It was found that single-crystal In{sub x}Ga{sub 1-x}N (0.63 ≤ x ≤ 0.82) films can be prepared without significant compositional fluctuations at growth temperatures below 500 °C. It was also found that the electrical properties of InGaN are strongly dependent on In composition, growth temperature, and film polarity. N-channel operation of the metal–insulator–semiconductor field-effect transistor (MISFET) with an ultrathin InGaN channel on the YSZ substrates was successfully demonstrated. These results indicate that an InGaN-based MISFET is a promising device for next-generation high-speed electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization

100 nm thick RuMoC films and 5 nm thick RuMoC films with Cu capping have been deposited on Si(111) by magnetron co-sputtering with Ru and MoC confocal targets. The samples were subsequently annealed at temperatures ranging from 450 to 650 °C in vacuum at a pressure of 3 × 10{sup −4} Pa to study the annealing effects on the microstructures and properties of RuMoC films for advanced seedless Cu metallization applications. The sheet resistances, residual oxygen contents, and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C, which can be easily controlled by the deposition power ratio of MoC versus Ru targets (DPR). When DPR was 0.5, amorphous RuMoC film (marked as RuMoC II) with low sheet resistances and residual oxygen contents was obtained. The fundamental relationship between the annealing temperatures with the microstructures and properties of the RuMoC films was investigated, and a critical temperature point was revealed at about 550 °C where the components and microstructures of the RuMoC II films changed obviously. Results indicated that below 550 °C, the RuMoC II films remained amorphous due to the well-preserved C-Ru and C-Mo bonds. However, above 550 °C, the microstructures of RuMoC II films transformed from amorphous to nano-composite structure due to the breakage of Ru-C bonds, while the supersaturated solid solution MoC segregated out along the grain boundaries of Ru, thus hindering the diffusion of Cu and O atoms. This is the main mechanism of the excellent thermal stability of the RuMoC films after annealing at high temperatures. The results indicated great prospects of amorphous RuMoC films in advanced seedless Cu metallization applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2 /V 2 O 3 thin film

For VO 2 -based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2 O 3 interlayer. V 2 O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2 /V 2 O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

36 MATERIALS SCIENCE↗