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At least 1,783 records · Page 99
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Interfacial magnetic characteristics of nearly compensated gadolinium iron garnet

Reports on spin Hall magnetoresistance, magnonic spin currents from thermal gradients, and spin transfertorque magnetic random-access memory using compensated ferrimagnets largely discuss bulk magnetization but lack consideration of depth profiles or interfacial characteristics. Here, magnetic and structural characterization of profiles and interfaces was performed for nearly compensated gadolinium iron garnet (GdIG) thin films. X-ray diffraction and reciprocal space maps show that sputter deposited GdIG on Si is polycrystalline with the desired cubic garnet phase, and GdIG on gadolinium gallium garnet (GGG) is epitaxial with <0.06% compressive strain. Temperature-dependent magnetometry confirms the compensation temperatures of GGG/GdIG and Si/GdIG to be 285 and 260 K, respectively, both near room temperature. Interestingly, these measurements suggest the presence of unsaturated rare-earth moments, which result in a characteristic hysteresis between heating and cooling sequences in the magnetization-temperature curves at zero field. Depth-profile measurements from polarized neutron reflectometry (PNR) indicate up to 91% volume fraction in GdIG on Si. At the interface, PNR reveals a region containing magnetized Fe-doped GGG, a low-density GdIG at the GGG/GdIG interface, and a thin magnetically dead layer at the Si/GdIG interface. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy confirm the assessment of PNR. In conclusion, the magnetic characteristics of interfacial regions are attributed to intermixing of Fe-Ga at the GGG/GdIG interface and the presence of amorphous Fe-Si at the Si/GdIG interface.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗
DOE OSTI2025

Size-dependent attraction of Cu solutes to clusters formed at Ag grain boundaries

We report a size-dependent solute clustering mechanism at grain boundaries in a sputtered ultrafine-grained Ag-Cu alloy, where large Cu clusters form despite weak individual solute-solute interactions. X-ray diffraction confirms limited Cu solubility in the Ag matrix, while scanning transmission electron microscopy reveals Cu clustering at both ordinary GBs and GB junctions. Density functional theory calculations show that 12-atom Cu clusters are energetically preferred, while smaller three-atom clusters are significantly less stable. Additional calculations demonstrate a marked increase in solute-cluster attraction energy with cluster size. As a result, these findings point to a previously unrecognized pathway for grain-boundary solute clustering in immiscible systems, driven by collective solute-cluster interactions, with implications for segregation behavior and stability in nanocrystalline and ultrafine-grained alloys.

Alloys↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗
DOE OSTI2023

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.

low-loss dielectrics↗
DOE OSTI2015

X-ray excited Auger transitions of Pu compounds

X-ray excited Pu core–valence–valence and core–core–valence Auger line-shapes were used in combination with the Pu 4f photoelectron peaks to characterize differences in the oxidation state and local electronic structure for Pu compounds. The evolution of the Pu 4f core-level chemical shift as a function of sputtering depth profiling and hydrogen exposure at ambient temperature was quantified. The combination of the core–valence–valence Auger peak energies with the associated chemical shift of the Pu 4f photoelectron line defines the Auger parameter and results in a reliable method for definitively determining oxidation states independent of binding energy calibration. Results show that PuO{sub 2}, Pu{sub 2}O{sub 3}, PuH{sub 2.7}, and Pu have definitive Auger line-shapes. These data were used to produce a chemical state (Wagner) plot for select plutonium oxides. This Wagner plot allowed us to distinguish between the trivalent hydride and the trivalent oxide, which cannot be differentiated by the Pu 4f binding energy alone.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Production and characterization of thin film group IIIB, IVB and rare earth hydrides by reactive evaporation

A recent short history of reactive evaporation by D. M. Mattox [History Corner—A Short History of Reactive Evaporation, SVC Bulletin (Society of Vacuum Coaters, Spring 2014), p. 50–51] describes various methods for producing oxides, nitrides, carbides, and some compounds, but hydrides were not mentioned. A study was performed in the mid-1970s at the General Electric Company Neutron Devices Department in Largo, FL, by the author to study preparation of thin film hydrides using reactive evaporation and to determine their unique characteristics and properties. Films were produced of scandium (Sc), yttrium (Y), titanium (Ti), zirconium (Zr), and the rare earth praseodymium (Pr), neodymium (Nd), gadolinium (Gd), dysprosium (Dy), and erbium (Er) hydrides by hot crucible filament and electron beam evaporation in atmospheres of deuterium and tritium gases. All-metal vacuum systems were used and those used with tritium were dedicated for this processing. Thin film test samples 1000 nm thick were prepared on 1.27 cm diameter molybdenum disk substrates for each occluder (i.e., an element that can react with hydrogen to form a hydride) material. Loading characteristics as determined by gas-to-metal atomic ratios, oxidation characteristics as determined by argon–sputter Auger analysis, film structure as determined by scanning electron microscope analysis, and film stress properties as determined by a double resonator technique were used to define properties of interest. Results showed hydrogen-to-metal atomic ratios varied from 1.5 to 2.0 with near maximum loading for all but Pr and Nd occluders which correlated with the oxidation levels observed, with all occluder oxidation levels being variable due to vacuum system internal processing conditions and the materials used. Surface oxide levels varied from ∼80 Å to over 1000 Å. For most films studied, results showed that a maximum loading ratio of near 2.0 and a minimum surface oxide level of ∼80 Å could be obtained with a bulk film oxygen level of ∼0.54 oxygen as determined by microprobe analysis when an evaporation rate of ∼0.313 mg/cm{sup 2} min was used in an atmosphere of D{sub 2} or T{sub 2} gas at a system deposition pressure of 1 × 10{sup −3 }Torr (1.33 × 10{sup −1 }Pa) in an evaporation time of ∼2 min. Platelet type (i.e., a film microstructure showing an overlay of flat plates with large grain sizes) film structures were observed for most films with some film mechanical properties determined (i.e., grain size and Vickers μ-hardness), and reduced stress levels were seen with initial normalized differential (tensile) stress levels being (1.0–4.0) × 10{sup 8 }dyne/cm{sup 2} for tritium loaded samples and (1.5 ± 0.5) × 10{sup 9 }dyne/cm{sup 2} for deuterium loaded samples. Also, stress aging characteristics were determined for some hydride films prepared in a radioactive tritium gas atmosphere. Tritium loading, however, had the undesirable characteristic of having to dispose of the internal processing system fixtures, which can be minimized, but the reactive evaporation technique produced desirable thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Combined wet and dry cleaning of SiGe(001)

Combined wet and dry cleaning via hydrofluoric acid (HF) and atomic hydrogen on Si{sub 0.6}Ge{sub 0.4}(001) surface was studied at the atomic level using ultrahigh vacuum scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy to understand the chemical transformations of the surface. Aqueous HF removes native oxide, but residual carbon and oxygen are still observed on Si{sub 0.6}Ge{sub 0.4}(001) due to hydrocarbon contamination from post HF exposure to ambient. The oxygen contamination can be eliminated by shielding the sample from ambient via covering the sample in the HF cleaning solution until the sample is introduced to the vacuum chamber or by transferring the sample in an inert environment; however, both processes still leave carbon contaminant. Dry in-situ atomic hydrogen cleaning above 330 °C removes the carbon contamination on the surface consistent with a thermally activated atomic hydrogen reaction with surface hydrocarbon. A postdeposition anneal at 550 °C induces formation of an atomically flat and ordered SiGe surface observed by STM. STS verifies that the wet and dry cleaned surface has an unpinned Fermi level with no states between the conduction and valence band edge comparable to sputter cleaned SiGe surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

Molybdenum oxide (MoO{sub x}) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-ray photoelectron spectroscopy measurements show that partially crystalline MoO{sub x} films are created with a mixture of Mo, MoO{sub 2}, and MoO{sub 3} components. Lower crystallinity content is observed in the MoON films, with an additional component of molybdenum nitride present. Three different film thicknesses of MoO{sub x} and MoON were investigated that were capped in situ in Ni. Small area devices were delineated and characterized using current–voltage (J-V), capacitance–frequency, capacitance–voltage, electroluminescence, and light beam-induced current techniques. In addition, J-V data measured as a function of temperature (JVT) were used to estimate back barrier heights for each thickness of MoO{sub x} and MoON and for the C/Ni paint. Characterization prior to stressing indicated the devices were similar in performance. Characterization after stress testing indicated little change to cells with 120 and 180-nm thick MoO{sub x} and MoON films. However, moderate-to-large cell degradation was observed for 60-nm thick MoO{sub x} and MoON films and for C/Ni painted back contacts.

14 SOLAR ENERGY↗
DOE OSTI2015

Local structure study of (In{sub 0.95−x}Fe{sub x}Cu{sub 0.05}){sub 2}O{sub 3} thin films using x-ray absorption spectroscopy

The (In{sub 0.95−x}Fe{sub x}Cu{sub 0.05}){sub 2}O{sub 3} (x = 0.06, 0.08, 0.15, and 0.20) films prepared by RF-magnetron sputtering were investigated by the combination of x-ray absorption spectroscopy (XAS) at Fe, Cu, and O K-edge. Although the Fe and O K-edge XAS spectra show that the Fe atoms substitute for the In sites of In{sub 2}O{sub 3} lattice for all the films, the Cu K-edge XAS spectra reveal that the codoped Cu atoms are separated to form the Cu metal clusters. After being annealed in air, the Fe atoms are still substitutionally incorporated into the In{sub 2}O{sub 3} lattice, while the Cu atoms form the CuO secondary phases. With the increase of Fe concentration, the bond length R{sub Fe-O} shortens and the Debye–Waller factor σ{sup 2}{sub Fe-O} increases in the first coordination shell of Fe, which are attributed to the relaxation of oxygen environment around the substitutional Fe ions. The forming of Cu relating secondary phases in the films is due to high ionization energy of Cu atoms, leading that the Cu atoms are energetically much harder to be oxidized to substitute for the In sites of In{sub 2}O{sub 3} lattice than Fe atoms. These results provide new experimental guidance in the preparation of the codoped In{sub 2}O{sub 3} based dilute magnetic oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Influence of Al{sub 2}O{sub 3} layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

To investigate the influence of ionic/covalent interface of Al{sub 2}O{sub 3}/SiO{sub 2} gate insulator on the electrical properties of thin-film transistors (TFTs) with ionic Ga-In-Zn-O (GIZO) semiconducting channel layers, Al{sub 2}O{sub 3} layers of different thickness were introduced between SiO{sub 2} and GIZO using plasma-enhanced atomic layer deposition. The GIZO layers were obtained by DC magnetron sputtering using a GIZO target (Ga:In:Zn = 1:1:1 mol. %). The GIZO TFTs with an Al{sub 2}O{sub 3}/SiO{sub 2} gate insulator exhibited positive threshold voltage (V{sub th}) shift (about 1.1 V), V{sub th} hysteresis suppression (0.23 V), and electron mobility degradation (about 13%) compared with those of a GIZO TFT with SiO{sub 2} gate insulator by the influence of ionic/ionic and ionic/covalent interface at Al{sub 2}O{sub 3}/GIZO and Al{sub 2}O{sub 3}/SiO{sub 2}, respectively. To clarify the origin of the positive V{sub th} shift, the authors estimated the shifts of flatband voltage (0.4 V) due to the dipole and the fixed charge (−1.1 × 10{sup 11}/cm{sup 2}) at Al{sub 2}O{sub 3}/SiO{sub 2} interface, from capacitance–voltage data for Pt/Al{sub 2}O{sub 3}/SiO{sub 2}/p-Si capacitors. Based on these experimental data, the authors found that the positive V{sub th} shift (1.1 V) could be divided into three components: the dipole (−0.4 V) and fixed charge (0.15 V) at the SiO{sub 2}/Al{sub 2}O{sub 3} interface, and the fixed charge (1.35 V) at the Al{sub 2}O{sub 3}/GIZO interface. Finally, it is noted that heterointerface of SiO{sub 2}/Al{sub 2}O{sub 3}/GIZO stacks is important not only to recognize mechanism of V{sub th} shift but also to design future TFTs with high-k dielectrics and low operating voltage.

42 ENGINEERING↗
DOE OSTI2015

Effect of porous morphology on phase transition in vanadium dioxide thin films

Vanadium oxide (VO{sub 2}) thin films were prepared on Si (100) substrates by direct current magnetron sputtering at room temperature, and then, postannealing was conducted at 450 °C for 2 h in vacuum. Structural characterizations demonstrated that the thin films exhibited porous morphology upon thermal annealing and the porosity and pore size depended on the oxygen flow rate in the process of film fabrication. Raman spectra were measured in the temperature range of 303–343 K, and resistance measurement was conducted in the temperature range of 293–363 K, to study the influence of porous morphology on the phase transition in VO{sub 2} thin films. It was illustrated that the porous morphology could provide a free space to release the stress induced in the monoclinic-to-tetragonal phase transition of VO{sub 2}, and lower the transition temperature to a certain degree.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Atomic layer deposition of ultrathin Cu{sub 2}O and subsequent reduction to Cu studied by in situ x-ray photoelectron spectroscopy

The growth of ultrathin (<5 nm) Ru-doped Cu{sub 2}O films deposited on SiO{sub 2} by atomic layer deposition (ALD) and Cu films by subsequent reduction of the Cu{sub 2}O using HCO{sub 2}H or CO is reported. Ru-doped Cu{sub 2}O has been deposited by a mixture of 16: 99 mol. % of [({sup n}Bu{sub 3}P){sub 2}Cu(acac)] as Cu precursor and 17: 1 mol. % of [Ru(η{sup 5}-C{sub 7}H{sub 11})(η{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3})] as Ru precursor. The catalytic amount of Ru precursor was to support low temperature reduction of Cu{sub 2}O to metallic Cu by formic acid (HCO{sub 2}H) on arbitrary substrate. In situ x-ray photoelectron spectroscopy investigations of the Cu{sub 2}O ALD film indicated nearly 1 at. % of carbon contamination and a phosphorous contamination below the detection limit after sputter cleaning. Systematic investigations of the reduction of Ru-doped Cu{sub 2}O to metallic Cu by HCO{sub 2}H or CO as reducing agents are described. Following the ALD of 3.0 nm Cu{sub 2}O, the ultrathin films are reduced between 100 and 160 °C. The use of HCO{sub 2}H at 110 °C enabled the reduction of around 90% Cu{sub 2}O. HCO{sub 2}H is found to be very effective in the removal of oxygen from Ru-doped Cu{sub 2}O films with 2.5–4.7 nm thickness. In contrast, CO was effective for the removal of oxygen from the Cu{sub 2}O films only below 3.0 nm at 145 °C. Root mean square surface roughness of 0.4 ± 0.1 nm was observed from atomic force microscopy (AFM) investigations after the ALD of Cu{sub 2}O, followed by the subsequent reduction of 3.0 nm Cu{sub 2}O using either HCO{sub 2}H at 110 °C or CO at 145 °C on SiO{sub 2}. Furthermore, ex situ low energy ion scattering and AFM investigations confirmed that the Cu{sub 2}O film after ALD and Cu films after subsequent reduction was continuous on the SiO{sub 2} substrate.

42 ENGINEERING↗
DOE OSTI2016

Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces

Atomic layer deposition (ALD) was used to deposit Ta{sub 2}O{sub 5} on etched and native oxide-covered InAs(100) using pentakis dimethyl amino tantalum and H{sub 2}O at 200–300 °C. The transport and removal of the native oxides during the ALD process was investigated using x-ray photoelectron spectroscopy (XPS). Depositions above 200 °C on etched surfaces protected the interface from reoxidation. On native oxide-covered surfaces, depositions resulted in enhanced native oxide removal at higher temperatures. The arsenic oxides were completely removed above 250 °C after 3 nm of film growth, but some of the As{sub 2}O{sub 3} remained in the film at lower temperatures. Angle-resolved and sputter depth profiling XPS confirmed indium and arsenic oxide migration into the Ta{sub 2}O{sub 5} film at deposition temperatures as low as 200 °C. Continuous removal of both arsenic and indium oxides was confirmed even after the deposition of several monolayers of a coalesced Ta{sub 2}O{sub 5} film, and it was demonstrated that native oxide transport is a prevalent component of the interface “clean-up” mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Work functions of hafnium nitride thin films as emitter material for field emitter arrays

The work functions of hafnium nitride thin films prepared by radio-frequency magnetron sputtering were investigated in vacuum, before and after surface cleaning processes, with a view of improving the properties of as-fabricated field emitter arrays comprising hafnium nitride emitters. The measurement of the work function was first performed for the as-deposited films and then for films subjected to surface cleaning process, either thermal treatment or ion bombardment. Thermal treatment at a maximum temperature of 300 °C reduced the work function by 0.7 eV. Once the film was heated, the work function maintained the reduced value, even after cooling to room temperature. A little change in the work function was observed for the second and third thermal treatments. The ion bombardment was conducted by exposing the sample to a thin plasma for different sample bias conditions and processing times. When the sample was biased at −10 V, the work function decreased by 0.6 eV. The work function reduction became saturated in the early stage of the ion bombardment. When the sample was biased at −50 V, the work function exhibited different behaviors, that is, first it decreased rapidly and then increased in response to the increase in processing time. The lowest attainable work function was found to be 4.00 eV. It should be noted that none of the work function values reported in this paper were obtained using surfaces that were demonstrated to be free from oxygen contamination. The present results suggest that the current–voltage characteristics of a field emitter array can be improved by a factor of 25–50 by the examined postprocesses.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Method for measuring thermal accommodation coefficients of gases on thin film surfaces using a MEMS sensor structure

A method for measuring the thermal accommodation coefficient α for surface-/gas interfaces is presented. It allows the determination of α for thin films produced by a variety of deposition technologies, such as chemical vapor deposition, physical vapor deposition, and atomic layer deposition (ALD). The setup is based on two microelectromechanical systems (MEMS) Pirani sensors facing each other in a defined positioning. Because these MEMS sensors show a very high sensitivity in their individual molecular flow regimes, it is possible to measure the accommodation coefficients of gases without the disturbing influence of the transition regime. This paper presents the analytical background and the actual measurement principle. The results for air and nitrogen molecules on sputtered Au and Pt surfaces are presented.

42 ENGINEERING↗
DOE OSTI2016

Structural, mechanical, and magnetic properties of GaFe{sub 3}N thin films

Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe{sub 3}N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe{sub 3}N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe{sub 3}N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

RBS-channeling study of radiation damage in Ar{sup +} implanted CuInSe{sub 2} crystals

Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar{sup +}-bombarded CuInSe{sub 2} single crystal using Rutherford backscattering/channeling analysis. Ar{sup +} ions of 30 keV were implanted with doses in the range from 10{sup 12} to 3 × 10{sup 16} cm{sup −2} at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stacking faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.

36 MATERIALS SCIENCE↗