Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al{sub 2}O{sub 3} layers crystallized on Si(111) substrates
We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al{sub 2}O{sub 3} insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline γ-Al{sub 2}O{sub 3} grains are formed after an annealing treatment of the amorphous Al{sub 2}O{sub 3} layers deposited by atomic layer deposition on Si(111) substrates. The 〈111〉 direction of the γ-Al{sub 2}O{sub 3} grains tends to be oriented approximately parallel to the 〈111〉 direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO{sub 2}-masked Al{sub 2}O{sub 3} insulator crystallized on Si(111) substrates are oriented with the c-axis along the 〈111〉 direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline γ-Al{sub 2}O{sub 3} grains in the Al{sub 2}O{sub 3} layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements.