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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits. It provides better system isolation than a transformer, while size and weight are appreciably reduced.
Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
An electrometer amplifier uses a field effect transistor to measure currents of low amperage. The circuit, developed as an ac amplifier, is used with an external filter which limits bandwidth to achieve optimum noise performance.
Field effect transistors as direct current amplifiers
Damage to field effect transistors by proton irradiation
Low noise amplifier design with field effect transistors, random noise characteristics, and noise measurements on commercial devices
Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
Insulated gate field effect transistors using cadmium selenide or telluride as piezoelectric semiconductor material
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Criteria applied to semiconductor materials and deposition processes for thick film, insulated gate field effect transistor fabrication
MOSFET drivers for low current memory fabricated in 64 unit monolithic strips, discussing driver performance data
Amplitude modulator with field effect tetrode transistor /FETT/, discussing linear mode operation of modulator circuit
Low temperature semiconductor deposition techniques in fabricating thick film, insulated gate, field effect transistors
Two dimensional numerical analysis of current saturation mechanism for junction field effect transistors with small and large length-to-width ratio values
Field effect transistors with nonuniform doping profiles along channel, calculating carrier accumulation and space charge limited current flow by two dimensional model analysis
Differential drain resistance calculation for junction field effect transistors
The derivation of the circuitry of a field effect transistor (FET) model, the procedure for adapting the model to automated statistical analysis program (ASAP), and the results of applying ASAP on this model are described.
Field-effect transistors, with their high impedance and low noise, can effectively measure very low currents. To bring the FET up to electrometer standards (so that it can measure currents of, say, 10 (sup -13) amp) the designer must know where the noise is and what to do about it.