SEARCH · Search NASA
Results for “2D magnetic semiconductors”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Transition Metal Dichalcogenides: Making Atomic‐Level Magnetism Tunable with Light at Room Temperature
Abstract The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D‐DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers ( M ‐doped TX 2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin‐caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D‐TMD DMSs and heterostructures. By combining magneto‐LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V‐doped TMD monolayers (e.g., V‐WS 2 , V‐WSe 2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D‐TMD heterostructures (VSe 2 /WS 2 , VSe 2 /MoS 2 ), the significance of proximity, charge‐transfer, and confinement effects in amplifying light‐mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron–hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D‐TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next‐generation magneto‐optic nanodevices.
Giant proximity exchange and flat Chern band in 2D magnet-semiconductor heterostructures
van der Waals (vdW) heterostructures formed by two-dimensional (2D) magnets and semiconductors have provided a fertile ground for fundamental science and spintronics. We present first-principles calculations finding a proximity exchange splitting of 14 meV (equivalent to an effective Zeeman field of 120 T) in the vdW magnet semiconductor heterostructure MoS 2 /CrBr 3 , leading to a 2D spin-polarized half-metal with carrier densities ranging up to 10 13 cm -2 . We consequently explore the effect of large exchange coupling on the electronic band structure when the magnetic layer hosts chiral spin textures such as skyrmions. A flat Chern band is found at a “magic” value of magnetization $\overline{m}$ ~ 0.2 for Schrödinger electrons, and it generally occurs for Dirac electrons. The magnetic proximity–induced anomalous Hall effect enables transport-based detection of chiral spin textures, and flat Chern bands provide an avenue for engineering various strongly correlated states.
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion
Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.
Built-in electric field control of magnetic coupling in van der Waals semiconductors
Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van der Waals (vdW) 2D magnetic semiconductor via a built-in electric field generated by the adsorption of superatomic ions. Using first-principles calculations, we predict a significant enhancement of ferromagnetic coupling and a great change of magnetic anisotropy in 2D semiconductors when they are sandwiched between superatomic cations and anions. The magnetic coupling is directly affected by the built-in electric field, which lifts the energy levels of mediated ligands' orbitals and enhances the superexchange interactions. Finally, these findings will be of interest for ionic gating controlled ferromagnets and magnetoelectronics based on vdW 2D semiconductors.
Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor
Semiconductors, featuring tunable electrical transport, and magnets, featuring tunable spin configurations, form the basis of many information technologies. A long-standing challenge has been to realize materials that integrate and connect these two distinct properties. Two-dimensional (2D) materials offer a platform to realize this concept, but known 2D magnetic semiconductors are electrically insulating in their magnetic phase. In this work, we demonstrate tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr and reveal strong coupling between its magnetic order and charge transport. This provides an opportunity to characterize the layer-dependent magnetic order of CrSBr down to the monolayer via magnetotransport. Exploiting the sensitivity of magnetoresistance to magnetic order, we uncover a second regime characterized by coupling between charge carriers and magnetic defects. The magnetoresistance within this regime can be dynamically and reversibly tuned by varying the carrier concentration using an electrostatic gate, providing a mechanism for controlling charge transport in 2D magnets.
Optical and magneto-optical properties of ferromagnetic monolayer CrBr 3 : A first-principles G W and G W plus Bethe-Salpeter equation study
The discovery of atomically thin two-dimensional (2D) magnetic semiconductors has triggered enormous research interest recently. In this paper, we use first-principles many-body perturbation theory to study a prototypical 2D ferromagnetic semiconductor, monolayer chromium tribromide (CrBr 3 ). With broken time-reversal symmetry, spin-orbit coupling, and excitonic effects included through the full-spinor GW and GW plus Bethe-Salpeter equation (GW-BSE) methods, we compute the frequency-dependent layer polarizability tensor and dielectric function tensor that govern the optical and magneto-optical (MO) properties. In addition, we provide a detailed theoretical formalism for simulating magnetic circular dichroism, MO Kerr effect, and Faraday effect, demonstrating the approach with monolayer CrBr 3 . Due to reduced dielectric screening in 2D and the localized nature of the Cr d orbitals, we find strong self-energy effects on the quasiparticle band structure of monolayer CrBr 3 that give a 3.8 eV indirect bandgap. Also, excitonic effects dominate the low-energy optical and MO responses in monolayer CrBr 3 where a large exciton binding energy of 2.3 eV is found for the lowest bright exciton state with excitation energy at 1.5 eV. We further find that the MO signals demonstrate strong dependence on the excitation frequency and substrate refractive index. Furthermore, our theoretical framework for modeling optical and MO effects could serve as a powerful theoretical tool for future study of optoelectronic and spintronics devices consisting of van der Waals 2D magnets.
Parameter-free treatment of a layered correlated van der Waals magnet: CrPS 4
The electronic and magnetic structure of CrPS 4 , a two-dimensional (2D) magnetic semiconductor is examined by employing the SCAN meta-GGA density functional. We find the resulting magnetic moment and band gap are in excellent agreement with experiment. From the bulk magnetic configurations, we confirm the experimentally observed A-type antiferromagnetic (A-AFM) ordered ground state with a magnetic moment of 2.78 µ B per chromium atom and band gap of 1.34 eV. To gain insight into the evolution of the ground state with layers, the total energy of each magnetic configuration is calculated for a variety of thicknesses. Monolayer CrPS 4 is predicted to be a ferromagnetic insulator with a band gap of 1.37 eV, and A-AFM for bilayer and trilayer, with band gaps of 1.35 and 1.30 eV, respectively. The electronic structure is reported for the single-, two-, and three-layer and bulk CrPS 4 . Finally, we explore the optical properties of the 2D structure and report the dielectric tensor components and Kerr parameters for the monolayer.
Strong Magnetocrystalline Anisotropy Arising from Metal–Ligand Covalency in a Metal–Organic Candidate for 2D Magnetic Order
Layered metal–organic frameworks are promising candidates for new two-dimensional magnets, as their synthetic programmability of these materials can provide a route to diverse structural and electronic properties. However, such framework materials typically lack the heavy elements that engender magnetocrystalline anisotropy in the monolayer ferromagnets reported to date. Alternative sources of magnetic anisotropy are therefore needed in these materials. Here, we report the synthesis of single crystals of the framework material (NMe 4 ) 2 [Fe 2 L 3 ] (H 2 L = 3,6-dichloro-2,5-dihydroxybenzoquinone) and evaluate the angular dependence of its magnetic properties. Oriented-crystal magnetization measurements reveal strong uniaxial anisotropy, where the easy axis is aligned with the crystallographic c axis. While the spin carriers of this structure are isotropic $S = ^5/_2$ Fe III metal centers and $S = ^1/_2$ organic linkers, the anisotropy energy of the framework material is comparable to that of reported 2D ferromagnets. Density functional theory calculations indicate that the observed magnetocrystalline anisotropy arises from ligand-to-metal charge transfer that enhances the magnetic anisotropy of the otherwise isotropic Fe centers, suggesting that metal–ligand covalency can be utilized as a general additive for the development of 2D magnets. These results in this study show the possibility for (NMe 4 ) 2 [Fe 2 L 3 ] to retain magnetic order down to the 2D monolayer limit. In addition, the combination of large magnetic anisotropy and semiconducting character in (NMe 4 ) 2 [Fe 2 L 3 ] highlights its potential as a new 2D magnetic semiconductor.
Spin–orbit coupling proximity effect in MoS 2 /Fe 3 GeTe 2 heterostructures
Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe 3 GeTe 2 (FGT) and 2D semiconductor MoS 2 . With reflectance magnetic circular dichroism, we found that the coercive field of MoS 2 -covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS 2 effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS 2 /FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS 2 exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.
Twist Engineering of Anisotropic Excitonic and Optical Properties of a Two-Dimensional Magnetic Semiconductor
Two-dimensional (2D) van der Waals (vdW) magnetic semiconductors are a new class of quantum materials for studying the emergent physics of excitons and spins in the 2D limit. Twist engineering provides a powerful tool to manipulate the fundamental properties of 2D vdW materials. Here, in this work, we show that twist engineering of the anisotropic ferromagnetic monolayer semiconductor CrSBr leads to bilayer magnetic semiconductors with continuously tunable magnetic moment, dielectric anisotropy, exciton energy, and linear dichroism. We furthermore provide a model for exciton energy in the media with tunable anisotropy. These results advance fundamental studies of 2D vdW materials and open doors to applications to nano-optics, twistronics, and spintronics.
Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI 2
Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI 2 . The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI 2 , revealing a Hall mobility of 15 cm 2 V −1 s −1 at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI 2 from 59 K (bulk) to 28 K (monolayer).
Coherent Magnon–Photon Coupling in the Magnetic Semiconductor CrSBr
Magnon-based hybrid quantum systems are promising candidates for quantum interconnects and quantum sensors, and they offer a rich platform for exploring nonlinear magnonics and cavity–photon interactions. Two-dimensional (2D) van der Waals magnets provide a compact, atomically flat geometry that can be easily integrated into existing quantum circuits, such as superconducting resonators and qubits. Among various 2D magnets, the magnetic semiconductor CrSBr is particularly unique due to its strong spin–exciton, spin–lattice, and magnon–exciton interactions. In this work, we demonstrate coherent coupling between antiferromagnetic (AFM) magnons in CrSBr and microwave photons in a niobium-(Nb)-based-on-chip resonator. We tuned the magnon–photon coupling strength by changing the number of CrSBr flakes integrated into the Nb microwave photon resonators. Furthermore, this work demonstrates the first step toward integrating layered van der Waals 2D magnets into superconducting microwave circuits, with full access for microwave and optical probing.
Probing Defects and Spin‐Phonon Coupling in CrSBr via Resonant Raman Scattering
Abstract Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, defects in mono‐ to multilayer CrSBr are correlated with structural, vibrational, and magnetic properties. Resonant Raman scattering is used to reveal distinct vibrational defect signatures. In pristine CrSBr, it is shown that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. Environmental exposure is shown to cause drastic degradation in monolayers, with the formation of intralayer defects. This is in contrast to multilayers that predominantly show bromine surface defects. Through deliberate ion irradiation, the formation of defect modes is tuned: these are strongly polarized and resonantly enhanced, reflecting the quasi‐‐1D electronic character of CrSBr. Strikingly, pronounced signatures of spin‐phonon coupling of the intrinsic phonon modes and the ion beam‐induced defect modes are observed throughout the magnetic transition temperature. Overall, defect engineering of magnetic properties is possible, with resonant Raman spectroscopy serving as a direct fingerprint of magnetic phases and defects in CrSBr.
Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal
Abstract Low‐dimensional magnetism has been boosted by the recent discovery of the ferromagnetism in layered two‐dimensional (2D) semiconductors. Although the macroscopic magnetic moments of 2D ferromagnets are weak, the anomalous Hall effect (AHE) can serve as a versatile electric probe to their magnetic properties. Here, the nonvolatile electric‐field manipulation of the AHE in an ultrathin metallic ferromagnet with perpendicular magnetic anisotropy at room temperature is reported, which is achieved by the electrostatic modulation of the longitudinal resistivity via a ferroelectric substrate without varying magnetization. Therefore, this work demonstrates an electric‐field‐controlled room‐temperature memory device based on the zero‐magnetic‐field anomalous Hall resistance of an ultrathin ferromagnet. More importantly, the experimental results disentangle magnetization and anomalous Hall resistance. As a result, the study reveals a linear decrease of anomalous Hall conductivity with normal conductivity, which is distinct from previous scaling relations. Accordingly, this work manifests a universe avenue to harnessing the AHE in low‐dimensional magnetic materials.
Intrinsic ferromagnetism and restrictive thermodynamic stability in MA$_{2}$N$_{4}$ and Janus VSiGeN$_{4}$ monolayers
The seminal experimental discovery of the remarkably stable MoSi 2 N 4 monolayer has led to a handful of predicted magnetic two-dimensional (2D) materials in the MA 2 Z 4 family (M = transition metals, A = Si, Ge, and Z = N, P, As). These magnetic monolayers were predicted to be dynamically stable, but none of them has been synthesized to date. In this Research Letter, from first-principles thermodynamic stability analysis, we demonstrate that only the nitrides are thermodynamically stable and this occurs under N-rich conditions. Based on this finding, we propose two ferromagnetic, semiconducting Janus monolayers in the family: VSiGeN 4 and VSiSnN 4 . They are both dynamically and thermally stable, but only the former is thermodynamically stable. Intriguingly, Janus VSiGeN 4 and VSiSnN 4 monolayers show weak in-plane anisotropy compared with the VSi 2 N 4 monolayer. Furthermore, these two emerging Janus magnetic semiconductors offer opportunities for studying 2D magnetism and spin control for spintronics applications.
A perspective on two-dimensional van der Waals opto-spin-caloritronics
Two-dimensional (2D) van der Waals magnetic semiconductors displaying controllable ferromagnetism at room temperature form atomically sharp interfaces with various substrates. Such heterostructures create platforms for understanding spin-dependent phenomena across interfaces and surfaces for high-performance technological applications. Combining these 2D magnets with light and the spin Seebeck effect (SSE) in-state-of-the-art thermo-opto-spin studies forms a new paradigm in the field of spin-caloritronics that harnesses light as the new heat. In this Perspective, we detail how to exploit recent advances in 2D van der Waals materials to boost the SSE and propose a new strategy for optically controlled SSE in 2D magnetic semiconductor-based heterostructures with the intent to establish the research thrust of “opto-spin-caloritronics.”