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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Correlation of Fracture Behavior With Microstructure in Friction Stir Welded, and Spin Formed AI-Li 2195 Domes

Single-piece, spin-formed domes manufactured from friction stir welded (FSW) plates of Al-Li alloy 2195 have the potential to reduce the cost of fabricating cryogenic propellant tanks. Mechanical properties in the completed domes can be related directly to the final material condition and the microstructures developed. However, these new fabrication techniques have resulted in unexpected material challenges, such as abnormal grain growth in the weld nugget and the propensity for fracture in the adjacent thermo-mechanically affected zone (TMAZ). In this study, the microstructure and texture transformations within the TMAZ are related to fracture location in the vicinity of the weldment. The texture variations in the TMAZ are caused primarily by the varying amounts of shear deformation introduced during the FSW process. Grain morphology and microtexture characteristics are examined as a function of location in the TMAZ via electron backscatter diffraction (EBSD). A strong correlation between fracture location and the presence of texture banding in the TMAZ is observed. The fracture path tends to follow a distinct region of low Taylor Factor (TF) grains.

Tayon, Wesley A.↗
NASA NTRS2016

Evaluation of the MICAST #2-12 AI-7wt%Si Sample Directionally Solidified Aboard the International Space Station

The US team of the European led "MIcrostructure Formation in CASTing of Technical Alloys under Diffusive and Magnetically Controlled Convective Conditions" (MICAST) program recently received a third Aluminum - 7wt% silicon alloy that was processed in the microgravity environment aboard the International Space Station. The sample, designated MICAST#2-12, was directionally solidified in the Solidification with Quench Furnace (SQF) at a constant rate of 40micometers/s through an imposed temperature gradient of 31K/cm. Procedures taken to evaluate the state of the sample prior to sectioning for metallographic analysis are reviewed and rational for measuring the microstructural constituents, in particular the primary dendrite arm spacing (Lambda (sub1)), is given. The data are presented, put in context with the earlier samples, and evaluated in view of a relevant theoretical model.

Tewari, Surendra N.↗
NASA NTRS1971

The development of autoclave processable, thermally stable adhesives for titanium alloy and graphite composite structures

The A-type polyimide adhesive resin P11B was modified by use of mixed diamines (thio-dianiline and meta phenylene diamine) which provided the desired autoclave processability. This new resin was termed P11BA. It was shown that copolymeric blends of P11BA and Amoco AI-1137 amide-imide resin provided improved adhesive properties when autoclave processed over the properties obtained previously by press bonding with P11B based copolymeric blended adhesives. Properties of bonded assemblies are presented for long-term aging at both elevated and low temperatures, and also stress-rupture tests at elevated temperature.

Vaughan, R. W.↗
NASA NTRS2012

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Aslam, S.↗
NASA NTRS1994

P/N In(Al) GaAs multijunction laser power converters

Eight In(AI)GaAs PN junctions grown epitaxially on the semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converted (LPC) chip. Advantages of multijunction LCP designs include the need for less circuitry for power reconditioning and the potential for lower I(sup 2)R power loss. As an example, these LPC's have a responsivity of approximately 1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cm short-circuit current at approximately 0.4V open-cicuit voltage. One disadvantage is the large current would lead to a large I(sup 2)R loss which would lower the fill factor so that 40 watts/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approximately 3V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the I(sup 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPC's) were made in two different compositions of the In(x)Al(y)Ga(1-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPC's had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 micron power conversion efficiencies were approximately 22 percent. One key advantage of multijunction LPC's is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

Wojtczuk, Steven↗