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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Understanding Pore Formation in ALD Alumina Overcoats

AlO X thin films deposited by atomic layer deposition (ALD) have previously been used to increase both stability and selectivity of supported palladium catalysts and are known to develop nanoscale porosity upon heating. Furthermore, understanding the factors that affect ALD thin film porosity would enable future design of layered catalytic structures with tunable nanoscale features on industrially relevant high surface area materials. In this study, porous and nonporous aluminum oxide supports with and without palladium nanoparticles were overcoated with thin films of 2 - 7 nm AlO X by ALD deposited at temperatures of 100 °C, 200 °C and 300 °C. Hydroxyl loss and changes in surface chemistry were observed upon heating the films, and changes in surface area and pore volume of the annealed films were correlated to AlO x deposition temperature and presence of Pd. Crystallization of the overcoat to γ-Al 2 O 3 is shown to occur separately from hydroxyl loss and pore formation. A mechanistic understanding of pore formation in AlO X ALD films is obtained by reference to studies of the structural transformations accompanying the formation of transition aluminas from hydroxide precursors. Additionally, a direct and tunable correlation is established between pore development and the overall hydroxyl content of AlO X ALD coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO 2 overlayers

Ultra-thin film coatings are used to protect semiconductor photoelectrodes from the harsh chemical environments common to photoelectrochemical energy conversion. These layers add contact transfer resistance to the interface that can result in a reduction of photoelectrochemical energy conversion efficiency of the photoelectrode. Here, we describe the concept of a partial protection layer, which allows for direct chemical access to a small fraction of the semiconductor underlayer for further functionalization by an electrocatalyst. The rest of the interface remains protected by a stable, inert protection layer. CuO is used as a model system for this scheme. Atomic layer deposition (ALD)-prepared TiO 2 layers on CuO thin films prepared from electrodeposited Cu 2 O allow for the control of interfacial morphology to intentionally expose the CuO underlayer. The ALD-TiO 2 overlayer shrinks during crystallization, while Cu 2 O in the underlayer expands during oxidation. As a result, the TiO 2 protection layer cracks to expose the oxidized underlying CuO layer, which can be controlled by preceding thermal oxidation. Furthermore, this work demonstrates a potentially promising strategy for the parallel optimization of photoelectrochemical interfaces for chemical stability and high performance.

14 SOLAR ENERGY↗
DOE OSTI2018

Interactions of VO x Species with Amorphous TiO 2 Domains on ALD-Derived Alumina-Supported Materials

We report that alumina-supported VO x –TiO 2 materials are synthesized by atomic layer deposition (ALD) and characterized by diffuse reflectance UV–vis (DRUV–vis) spectroscopy, Raman spectroscopy, and density functional theory (DFT) calculations in order to identify the metal oxide structures present on the surface of the support. Preferential binding of VO x to TiO 2 domains is demonstrated by Raman spectroscopy studies and confirmed by DFT. Varying distributions of V–O–Ti, V–O–V, and V–O–Al bonds are present in the examined materials. The interactions of VO x and TiO 2 are elucidated further under a reducing, H 2 environment at elevated temperatures. An enhancement in reducibility of VOx species is expected and observed upon the modification of alumina with TiO 2 above monolayer coverages, but also when a single ALD cycle of TiO 2 is deposited following the deposition of VO x on the support. X-ray photoelectron spectroscopy (XPS) detects changes in the oxidation state of vanadium, but not titanium during reduction. Lastly, reversible migration and aggregation of V and Ti atoms is also detected upon heating in H 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Mechanistic Studies of the Oxidation of Cyclohexene to 2-Cyclohexen-1-one over ALD Prepared Titania Supported Vanadia

Selective oxidation of cyclohexene to 2-cyclohexen-1-one over titania supported vanadia (VO x /TiO 2 ) has been studied using temperature dependent in-situ FTIR spectroscopy in both the presence and absence of oxygen. The VO x /TiO 2 samples were prepared using one atomic layer deposition (ALD) cycle and characterized by Raman spectroscopy. In-situ FTIR data for the oxidation of cyclohexene and perdeuterocyclohexene allow for the formulation of a molecular level reaction mechanism, which is initiated by the transfer of an allyl hydrogen. Oxidation of perdeuterocyclohexene provides a direct probe of the formation of OD and HDO moieties that support the involvement of specific steps in the proposed mechanism. The presence of gas phase oxygen does not lead to a change in the products versus anaerobic conditions. However, gas phase oxygen is significantly incorporated in the CO 2 over-oxidation product above ~250 °C. Data were also obtained with cyclohexene epoxide as the reactant in an effort to determine whether there is a parallel reaction pathway, which is initiated by C=C activation in cyclohexene, that involves cyclohexene epoxide as an intermediate. Furthermore, though a minor pathway involving a cyclohexene epoxide intermediate cannot be ruled out, these data demonstrate that, under experimental conditions, the dominant pathway from cyclohexene to cyclohexene-1-one is initiated by an allyl-H activation step and does not involve an epoxide intermediate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRSDate not supplied

Vacuum Sealable Container (VSC) and Astronaut Lunar Drill (ALD) for Artemis

Introduction: NASA’s Artemis Program is under development to send first woman and next man to the Moon. Artemis will utilize a suite of new technology for Lunar exploration, including new space vehicles, new space suits, and new Astronaut Tools. Honeybee Robotics has been working with NASA JSC to develop a new Vacuum Sealable Container (VSC) and new Astronaut Lunar Drill (ALD) for the upcoming Artemis missions. Vacuum Sealable Container: Sample return continues to be the “Holy Grail” of space exploration, allowing for the analysis of materials using Earth-based laboratories instead of needing to miniaturize and ruggedize instrumentation for space. The Apollo missions to the Moon had several kinds of Sealable Containers which brought back Lunar samples for analysis [1]. These samples are still being analyzed, fifty years later. The VSC requirements are different from that for Apollo containers and as such, new development was required. One major difference between Artemis samples and those from Apollo is the desire to bring back volatiles which may be part of lunar regolith. The VSC is designed to withstand a high-pressure differential caused by sublimating volatiles. Because of the new, stricter sealing requirements, additional features have been added to the VSC. For example, the seal on the container is required to be more robust, thus required more force to actuate, and the seal must be locked in place with a secondary mechanism. Astronaut Lunar Drill: The ALD is designed to be a multi-functional platform for Lunar sample acquisition. The drill builds on lessons learned from the Apollo Lunar Surface Drill (ALSD), as well as Honeybee’s long history of mechanized sample acquisition devices for space [2]. The main functionality of the ALD is Deep Core Regolith Drilling. Additional functionality includes Surface Rock Coring (SRC), and GeoTech Tools (GTT). The ALD is a rotary-percussive drill designed with deep drilling in mind. The ALD is currently designed to have decoupled rotary and percussion subsystems to allow for maximum battery life and reduced fatigue on the crewmember. Honeybee drill technology will automatically engage the percussion when needed to drill at maximum efficiency. The mechanized drill stand helps improve drilling efficiency; the system utilizes advanced drilling algorithms which only require the crewmember to hold a single switch. Additionally, the stand aids in extraction of deep cores, something which was a problem on Apollo. The SRC functionality of the ALD utilizes Honeybee’s Eccentric Tube Core Breakoff technology to collect and retain rock core samples. This technology has also been infused into the Perseverance rover mission. The ALD is removable from the stand to allow crewmembers to collect samples from large boulders. Bringing back rock cores samples instead of full rocks allows for a wider variety of samples to be returned to Earth for study and puts them in a uniform form-factor for effective sealing and analysis. SRC bits will utilize the power of the drill’s percussion system to drill hard Lunar rocks and expedite sample acquisition. The mechanized stand on the ALD allows for additional attachments for taking geotechnical measurements with a Static Cone Penetrometer (SCP) and a Shear Vane (SV). With the stand, the ALD can take SCP measurements with the touch of a button, storing data for return to Earth. SV measurements utilize the ALD’s Rotary motor to spin the vanes in a controlled manner, getting clean data untampered by human error. References: [1] Bar Cohen and Zacny (2009), Drilling in Extreme Environments - Penetration and Sampling on Earth and Other Planets, Wiley. [2] Bar-Cohen and Zacny, Advances in Terrestrial and Extraterrestrial Drilling, CRC Press. [3] Myrick (2003), Core Break-off Mechanism. US Patent No. 6,550,549 Acknowledgements: This work has been supported by NASA via SBIR Phase 3.

Artemis↗
DOE OSTI2020

Atomic Layer Deposition (ALD) to Extend Catalyst Lifetime for Biobased Adipic Acid Production

Robust heterogeneous catalysts are essential for enabling biomass conversion; however, harsh reaction environments introduce durability challenges for many conventional catalyst materials [1]. The hydrogenation of biobased muconic acid to adipic acid is one such emerging chemistry that faces PGM catalyst stability challenges [2]. Muconic acid is a heavily-investigated biobased platform chemical that can be converted into an array of large-market commodity chemicals [2]. PGM catalysts are exceptionally effective for muconic acid hydrogenation to adipic acid, with Pd the most active to date. [2] However, Pd leaches in an acidic environment and this chemistry has a high propensity for fouling. Atomic layer deposition (ALD) is one such material design strategy that has emerged to stabilize supported metal catalysts [3]. ALD coatings are theorized to stabilize supported metal active sites by i) covering high-energy facets most susceptible to degradation, ii) disrupting the physical mobility of active sites, and iii) reinforcing the structure of the underlying catalyst support [3]. However, ALD coatings for catalyst durability with carboxylic acids remains an underdeveloped area of research and literature reports have yet to consider the techno-economic tradeoffs between the ALD manufacturing cost and catalyst lifetime productivity. This study examines low-cycle Al2O3 ALD coatings to stabilize Pd/TiO2 against deactivation during muconic acid hydrogenation. The unique harshness of muconic acid for Pd leaching was evaluated by both experiment and computation. Based on batch reactor screening results, uncoated and ALD coated catalysts were evaluated in a continuous flow reactor for their productivity, stability, and post-reaction regenerability at 700 degrees C. Characterization was performed to assess the impact of ALD coatings on catalyst morphology, as well as following regeneration. Finally, techno-economic analysis models evaluated the value proposition for ALD-coated catalysts within an nth-generation adipic acid biorefinery.

09 BIOMASS FUELS↗
DOE OSTI2026

Atomic Layer Deposition (ALD) of Metal and Metal Oxide Films: A Surface Science Study (Final Report)

This is the final report for this project. The long-term objective of our project is to develop a general molecular-level picture of the surface chemistry associated with ALD processes. Our central hypothesis is that the chemistry of ALD precursors can differ significantly from that seen in solution. Awareness of such differences should provide general guidelines on what to watch for when synthesizing new ALD precursors and designing and optimizing new ALD processes, especially in terms of minimizing the incorporation of impurities in the growing films and of carrying out depositions under mild pressure and temperature conditions. The main objective of our research project has been to advance the fundamental knowledge of the surface chemistry of ALD precursors needed for the design and optimization of film deposition processes. A modern surface-science approach has been implemented to both elucidate the mechanism of the reactions of the precursors on the surface and characterize the composition and morphology of the growing films. In general, emphasis is being placed on: • Identifying the primary reactions that may lead to the deposition of clean films; •Identifying the secondary reactions that may help the ALD process, by, for instance, helping with the reduction (or oxidation) of the metal atom; • Identifying the secondary reactions that may lead to the deposition of undesirable impurities in the growing films; • Determining the kinetic parameters of the relevant surface reactions in order to define the optimum conditions for film deposition and to minimize impurity deposition. • Characterizing the nature of the resulting films, with focus on their stoichiometry and on the final oxidation states of the constituent elements; and • Using the information obtained to propose better precursors for given ALD processes.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thermal Conductivity and Phonon Scattering Processes of ALD Grown PbTe–PbSe Thermoelectric Thin Films

Abstract This work studies the thermal conductivity and phonon scattering processes in a series of n‐type lead telluride‐lead selenide (PbTe–PbSe) nanostructured thin films grown by atomic layer deposition (ALD). The ALD growth of the PbTe–PbSe samples in this work results in nonepitaxial films grown directly on native oxide/Si substrates, where the Volmer–Weber mode of growth promotes grains with a preferred columnar orientation. The ALD growth of these lead‐rich PbTe, PbSe, and PbTe–PbSe thin films results in secondary oxide phases, along with an increase microstructural quality with increased film thickness. The compositional variation and resulting point and planar defects in the PbTe–PbSe nanostructures give rise to additional phonon scattering events that reduce the thermal conductivity below that of the corresponding ALD‐grown control PbTe and PbSe films. Temperature‐dependent thermal conductivity measurements show that the phonon scattering in these ALD‐grown PbTe–PbSe nanostructured materials, along with ALD‐grown PbTe and PbSe thin films, are driven by extrinsic defect scattering processes as opposed to phonon–phonon scattering processes intrinsic to the PbTe or PbSe phonon spectra. The implication of this work is that polycrystalline, nanostructured ALD composites of thermoelectric PbTe–PbSe films are effective in reducing the phonon thermal conductivity, and represent a pathway for further improvement of the figure of merit ( ZT ), enhancing their thermoelectric application potential.

DeCoster, Mallory E.↗
DOE OSTI2020

Revealing and Elucidating ALD-Derived Control of Lithium Plating Microstructure

The practical implementation of Li metal batteries is hindered by difficulties in controlling the Li metal plating microstructure. While previous atomic layer deposition (ALD) studies have focused on directly coating Li metal with thin films for the passivation of the electrode–electrolyte interface, a different approach is adopted, situating the ALD film beneath Li metal and directly on the copper current collector. Here, a mechanistic explanation for this simple strategy of controlling the Li metal plating microstructure using TiO 2 grown on copper foil by ALD is presented. In contrast to previous studies where ALD-grown layers act as artificial interphases, this TiO 2 layer resides at the copper–Li metal interface, acting as a nucleation layer to improve the Li metal plating morphology. Upon lithiation of TiO 2 , a Li x TiO 2 complex forms; this alloy provides a lithiophilic surface layer that enables uniform and reversible Li plating. The reversibility of lithium deposition is evident from the champion cell (5 nm TiO 2 ), which displays an average Coulombic efficiency (CE) of 96% after 150 cycles at a moderate current density of 1 mA cm –2 . This simple approach provides the first account of the mechanism of ALD-derived Li nucleation control and suggests new possibilities for future ALD-synthesized nucleation layers.

25 ENERGY STORAGE↗
DOE OSTI2020

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Substrate-Dependent Study of Chain Orientation and Order in Alkylphosphonic Acid Self-Assembled Monolayers for ALD Blocking

For years, many efforts in area selective atomic layer deposition (AS-ALD) have focused on trying to achieve high-quality self-assembled monolayers (SAMs), which have been shown by a number of studies to be effective for blocking deposition. In this work, we show that in some cases where a densely packed SAM is not formed, significant ALD inhibition may still be realized. The formation of octadecylphosphonic acid (ODPA) SAMs was evaluated on four metal substrates: Cu, Co, W, and Ru. The molecular orientation, chain packing, and relative surface coverage were evaluated using near-edge X-ray absorption fine structure (NEXAFS), Fourier transform infrared (FTIR) spectroscopy, and electrochemical impedance spectroscopy (EIS). ODPA SAMs formed on Co, Cu, and W showed strong angular dependence of the NEXAFS signal whereas ODPA on Ru did not, suggesting a disordered layer was formed on Ru. Additionally, EIS and FTIR spectroscopy confirmed that Co and Cu form densely packed, “crystal-like” SAMs whereas Ru and W form less dense monolayers, a surprising result since W-ODPA was previously shown to inhibit the ALD of ZnO and Al 2 O 3 best among all the substrates. This work suggests that multiple factors play a role in SAM-based AS-ALD, not just the SAM quality. Therefore, metrological averaging techniques (e.g., WCA and FTIR spectroscopy) commonly used for evaluating SAMs to predict their suitability for ALD inhibition should be supplemented by more atomically sensitive methods. Finally, it highlights important considerations for describing the mechanism of SAM-based selective ALD.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Expanding the Zinc Precursor Toolbox: A Comparative Study of Precursors for Thermal ALD of ZnO Thin Films

Atomic layer deposition (ALD) of zinc oxide (ZnO) has been widely researched using diethyl zinc (DEZ)-based methods. The significant importance of thin films of ZnO as transparent conductive oxides (TCO) in optoelectronic devices and photovoltaics warrants examining alternative Zn precursors for ZnO ALD as potential replacements for the pyrophoric DEZ. In this study, we investigated three alternative Zn precursors: Zn(EEKI)2, Zn(DMP)2, ZnEt(HMDS), in the process development for high-quality ZnO thin films and compared them to DEZ. The ALD processes were studied using in situ spectroscopic ellipsometry. The properties of the ALD ZnO films were characterized using ex situ X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry and nuclear reaction analysis (RBS/NRA), X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and ultraviolet-visible (UV/Vis) spectrophotometry. These measurements confirmed the formation of pure, stoichiometric, and polycrystalline ZnO films using all four Zn precursors. Although the selected precursors are chemically diverse Zn compounds, they all yielded saturating ALD processes and high-quality ZnO thin films at 200 °C. This study highlights the potential benefits of alternative zinc precursors in designing ALD processes for ZnO thin films.

Obenlüneschloß, Jorit↗
DOE OSTI2025

Atomic Layer Deposition (ALD) of Metal and Metal Oxide Films: A Surface Science Study (Final Report)

This is the final report for this project. The long-term objective of our project is to develop a general molecular-level picture of the surface chemistry associated with ALD processes. Our central hypothesis is that the chemistry of ALD precursors can differ significantly from that seen in solution. Awareness of such differences should provide general guidelines on what to watch for when synthesizing new ALD precursors and designing and optimizing new ALD processes, especially in terms of minimizing the incorporation of impurities in the growing films and of carrying out depositions under mild pressure and temperature conditions. The main objective of our research project has been to advance the fundamental knowledge of the surface chemistry of ALD precursors needed for the design and optimization of film deposition processes. A modern surface-science approach has been implemented to both elucidate the mechanism of the reactions of the precursors on the surface and characterize the composition and morphology of the growing films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Engineering High- k /SiGe Interface with ALD Oxide for Selective GeO x Reduction

Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x -rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al 2 O 3 in contrast to HfO 2 on SiGe; yet, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al 2 O 3 /SiGe is discovered using atomic layer deposited (ALD) Al 2 O 3 insertion into or on top of ALD HfO 2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al 2 O 3 /SiGe and HfO 2 /SiGe interfaces with the insertion of Al 2 O 3 into or on top of the HfO 2 oxide. The data is consistent with the Al 2 O 3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism demonstrates that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This finding shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Highly dispersed Co deposited on Al 2 O 3 particles via CoCp 2 + H 2 ALD

Highly dispersed cobalt atoms were deposited on porous alumina particles using atomic layer deposition (ALD) with a CoCp 2 /H 2 chemistry at approximately 7 wt%. H 2 did not completely reduce the cyclopentadienyl organic ligands bound to deposited Co atoms at ALD reaction conditions. A sharp decline in Co deposited per cycle for two or more ALD cycles indicates that much of the Al 2 O 3 surface is sterically blocked from further CoCp 2 deposition after the first CoCp 2 exposure. Temperature programmed reduction confirmed that the adsorbed precursor organic ligands persist after H 2 exposures during ALD and temperatures as high as 500 °C are required to fully reduce the organic ligands to CH 4 . High resolution, element sensitive imaging showed that Co atoms were dispersed on the Al 2 O 3 surface and could deposit in previously unobserved multiple growth morphologies, specifically layers that were continuous over several angstroms or discrete nanoparticles. Density functional theory calculations were used to examine Co atom adsorption, show the altered haptic binding of cracked Cp ligands, and to calculate the thermodynamics of Cp ligand decomposition. The lateral steric hindrance between organic ligands bound to deposited Co atoms, Cp ligand decomposition mechanism, and local Al 2 O 3 surface termination all likely determine the observed Co growth morphology during initial ALD cycles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Unraveling the Highly Plastic Behavior of ALD-Aluminum Oxide Encapsulations by Small-Scale Tensile Testing

We present a study directly measuring the electron-beam-induced plasticity of amorphous Al 2 O 3 coatings. Core–shell nanostructures are employed as small-scale model systems for two-dimensional coatings made by atomic layer deposition (ALD). Copper nanowires (NWs) are used as substrates for ALD deposition, representing a model system for interconnects commonly found in integrated circuits. Experiments are performed in situ in a transmission electron microscope (TEM) and further analyzed with electron energy loss spectroscopy (EELS). Our in situ TEM tensile experiments reveal the highly plastic behavior of the ALD shell, which withstands a maximum strain of 188%. Comparable samples under beam-off conditions show a brittle fracture, which underlines the effect of electron irradiation. The electron-beam-activated bond switching within the amorphous network enables compensation of the applied tensile strain, leading to viscous flow. By incorporating an intermediate nanocrystalline layer within the Al 2 O 3 shell, the plasticity is suppressed and brittle fracture occurs. This work directly demonstrates the tuning of mechanical properties in amorphous ALD structures through electron irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design and Characterization of ALD-Based Overcoats for Supported Metal Nanoparticle Catalysts

Supported metal nanoparticle (SMN) catalysts are enormously crucial for many catalytic applications. However, catalyst deactivation, caused by sintering and coke formation, is a ubiquitous problem that significantly undermines catalytic processing economics. The application of material overcoating onto supported metal nanoparticles by atomic layer deposition (ALD) offers the solution to inhibit catalyst deactivation. Herein, we discuss examples in which ALD has been used to stabilize SMN catalysts in gaseous and aqueous-phase reactions. We highlight the ALD tools and methods in coating high-surface-area catalysts. Besides, various techniques are introduced to understand better how to characterize the overcoating layer and the catalyst itself. Finally, the outlook for new techniques to characterize the ALD overcoated catalytic materials is discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗