Search NASA⌕ Search

SEARCH · Search NASA

Results for “ALUMINIUM NITRIDES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Capabilities of GaN/AlN/GaN structures as high-intensity pyroelectric laser sensors

The use of transparent Al{sub 2}O{sub 3}/GaN/AlN/GaN structures as pyrometric sensors for measuring the parameters of high-intensity laser pulses is proposed. The peculiarities of the employment of such sensors in laser fusion facilities are analysed. Post-pulse distributions of the absorbed energy density are obtained for various parameters of both GaN layers. The local maxima of these distributions are minimised by varying the ratio of donor concentration and the ratio of their thicknesses under the condition of invariance of the total absorbed energy. The optimal structure configuration is established in terms of reducing the possible negative effect of laser impact on the pyroelectric coefficient stability. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Shock-Wave Proprieties of High-Strength Ceramics

The shock and release response of a suite of high-strength ceramics has been investigated with controlled planar impact methods and velocity interferometry diagnostics. The study provides Hugoniot, yield and post-yield compressive strength, phase transformation and tensile spall material properties data for these ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

Abstract Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

A 1-km photonic link connecting superconducting circuits in two dilution refrigerators

Superconducting quantum processors are a leading platform for implementing practical quantum computation algorithms. Although superconducting quantum processors with hundreds of qubits have been demonstrated, their further scale-up is constrained by the physical size and cooling power of dilution refrigerators. This constraint can be overcome by constructing a quantum network to interconnect qubits hosted in different refrigerators, which requires microwave-to-optical transducers to enable low-loss signal transmission over long distances. Although various designs and demonstrations have achieved high-efficiency and low-added-noise transducers, a coherent photonic link between separate refrigerators has not yet been realized. Here, in this work, we experimentally demonstrate coherent signal transfer between two superconducting circuits housed in separate dilution refrigerators, enabled by a pair of frequency-matched aluminium nitride electro-optic transducers connected via a 1-km telecom optical fibre. The optical frequency matching between two transducers is realized by an asymmetric photonic molecule design, and an overall 80 dB improvement in transduction efficiency over commercial electro-optic modulators is achieved, paving the way towards a fully quantum-enabled link. This work provides critical design guidelines for scalable superconducting quantum networks interconnected by photonic links.

nonlinear optics↗
DOE OSTI2020

Large-scale integration of artificial atoms in hybrid photonic circuits

A central challenge in developing quantum computers and long-range quantum networks is the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state ‘artificial atom’ qubits because they enable on-demand remote entanglement, coherent control of over ten ancillae qubits with minute-long coherence times and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. So far, these efforts have been stymied by qubit inhomogeneities, low device yield and complex device requirements. Here we introduce a process for the high-yield heterogeneous integration of ‘quantum microchiplets’—diamond waveguide arrays containing highly coherent colour centres—on a photonic integrated circuit (PIC). We use this process to realize a 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride PIC. Photoluminescence spectroscopy reveals long-term, stable and narrow average optical linewidths of 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited linewidth of 32 megahertz (93 megahertz). We show that inhomogeneities of individual colour centre optical transitions can be compensated in situ by integrated tuning over 50 gigahertz without linewidth degradation. The ability to assemble large numbers of nearly indistinguishable and tunable artificial atoms into phase-stable PICs marks a key step towards multiplexed quantum repeaters and general-purpose quantum processors

36 MATERIALS SCIENCE↗
DOE OSTI2022

Stabilization of garnet/Li interphase by diluting the electronic conductor

The high interfacial resistance and lithium (Li) dendrite growth are two major challenges for solid-state Li batteries (SSLBs). The lack of understanding on the correlations between electronic conductivity and Li dendrite formation limits the success of SSLBs. Here, by diluting the electronic conductor from the interphase to bulk Li during annealing of the aluminium nitride (AlN) interlayer, we changed the interphase from mixed ionic/electronic conductive to solely ionic conductive, and from lithiophilic to lithiophobic to fundamentally understand the correlation among electronic conductivity, Li dendrite, and interfacial resistance. During the conversion-alloy reaction between AlN and Li, the lithiophilic and electronic conductive Li x Al diffused into Li, forming a compact lithiophobic and ionic conductive Li 3 N, which achieved an ultrahigh critical current density of 2.6/14.0 mA/cm 2 in the time/capacity-constant mode, respectively. The fundamental understanding on the effect of interphase nature on interfacial resistance and Li dendrite suppression will provide guidelines for designing high-performance SSLBs.

25 ENERGY STORAGE↗
DOE OSTI2019

Interaction Between Liquid Steel and AlN Substrate Containing Al-Y-Oxides

Reactions between molten iron, molten silicon steel, and ceramic materials are of great importance from the perspective of the corrosion of refractory material in the steelmaking and continuous casting processes. Reactions between liquid steel and aluminum nitride (AlN) substrate containing Al-Y-oxides were investigated using the sessile drop method at 1833 K (1560 °C). The liquid–substrate interface was observed with the increasing holding time, and the reaction mechanism was studied. In the case of the liquid iron and the silicon steel on the AlN substrate containing Al-Y-oxides, the reaction products on the steel side of the interface between the steel and the substrate were Al-rich Al-Y-oxides and Al{sub 2}O{sub 3} particles. For silicon steel and pure AlN substrate, Al{sub 2}O{sub 3} particles were the main products. Contact angles were lower for liquid iron than for silicon steel due to the higher oxygen content in iron. In addition, the solid–liquid interfacial tension and the work of adhesion between AlN and steel were measured.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n-InN layers with a concentration of free electrons of ~10{sup 19} cm{sup –3} are reported. The layers are grown by molecular-beam epitaxy with the plasma activation of nitrogen on sapphire substrates with AlN and GaN buffer layers. It is found that, as the InN layers are grown under conditions with enrichment with nitrogen at a growth temperature elevated to 470°C close to the beginning of the decomposition of InN, the crystal quality of the layers is improved and the stimulated-emission threshold is lowered. As the conditions of growth change to conditions with enrichment with the metal, two emission bands separated by an energy of 100 meV are observed in the spontaneous-photoluminescence spectra of InN. For such layers, a substantial increase in the stimulated-emission threshold and, in some cases, the lack of a transition to stimulated emission are observed. In the study, an interpretation of the observed emission bands is given and some inferences as to their nature are made.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Electronic and Magnetic Properties of Mn-doped and (Mn,C)-codoped w-AlN with the Presence of N Vacancy

In this paper, we discover the structural, electronic, and magnetic properties of Mn-doped (6.25 and 12.5%) and Mn-C-codoped wurtzite AlN with the presence of nitrogen vacancy. These properties have been investigated using density functional theory implemented in Quantum ESPRESSO package. AlN doped and codoped were optimized by using Broyden-Fletcher-Goldfarb-Shanno (BFGS) approximation. The electronic and magnetic properties are determined by the total and partial density of states. The presence of impurities and nitrogen vacancy induces magnetic properties, indicating that these materials are good candidates for electromagnetic and spintronics applications. Our results are in good agreement with experimental and other theoretical studies. We can conclude from this study that this material can be used as diluted magnetic semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Miniband formation engineering in GaN/AlN superlattices with constant total effective length

In this work, we study the miniband formation procedure in GaN/AlN constant total effective length superlattices by means of the subband energy calculations. We calculate the transmission coefficients and miniband structures of the systems by means of the transfer matrix and finite difference methods, respectively. The miniband structures obtained by using these methods confirm each other. Here, we observe a nonlinear miniband gap behavior as the number of wells changes. Now, we can tune the width of each miniband and minigap by means of the number of wells and the total effective length of the system. By using the strategy of fixing the total length of the system and optimizing the number of layers inside it, we can find the same miniband widths as the usual superlattice (fixing the well width, not the total system length). However, in the earlier case (our proposal), fabrication of the device may need fewer amounts of the material and may lead to smaller device sizes, because we fixed the total system length.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions

We report the results of systematic Raman spectroscopy studies of Al{sub x}Ga{sub 1 –x}N (x ~ 0.75) layers grown using plasma-assisted molecular beam epitaxy at various stoichiometric conditions and growth fluxes. The high-intensity asymmetric low-frequency peak obeying Bose statistics is discovered in Raman spectra of the layers grown by temperature-modulated epitaxy at strongly Ga-enriched conditions. Theoretical model is developed to explain the origin and the high intensity of the observed low-frequency peak, which is attributed to the presence of excessive metallic gallium in AlGaN layers and can be explained by vibrations of gallium clusters with a diameter of ~1 nm. The nature of the low-frequency peak is similar to that of the boson peak in glasses, which occupies the same frequency range in Raman spectra. We demonstrate the capabilities of Raman spectroscopy as an express and non-destructive technique for optimization of growth conditions of AlGaN layers to achieve simultaneously the atomically-smooth droplet-free surface morphology and the high structural quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

High-Voltage AlInGaN LED Chips

A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n-type contact, the n-type contact pads in them are arranged inside the p-type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n- and p-type contacts as well as current-carrying strips.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates

Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different degrees. It is shown that growth on substrates misoriented with respect to the 〈100〉 direction to different degrees results in the formation of AlN films with different phase compositions and crystal states. An increase in the degree of misorientation of the GaAs(100) substrate used for growth influences both the structural quality of AlN nanofilms and their electronic structure, surface morphology, and optical properties. Thus, the morphology, surface composition, and optical functional characteristics of AlN/GaAs(100) heterophase systems can be controlled using differently misoriented GaAs(100) substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Optical Gain in Heavily Doped Al{sub x}Ga{sub 1 –x}N:Si Structures

Gain characteristics of heavily doped Al{sub x}Ga{sub 1 –x}N/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 10{sup 3} сm{sup –1} at an pumping power density of 8–600 kW/cm{sup 2}. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 10{sup 16} cm{sup 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The Proximity and Josephson Effects in Niobium Nitride–Aluminum Bilayers

Highly disordered thin films of niobium nitride and the specific features of the proximity effect in NbN (S)–aluminum (N) bilayers with a large resistivity ratio, ρ{sub NbN}/ρ{sub Al}≫ 1, are studied. It is shown that magnetic screening and the critical current I{sub c} of such SN structures significantly increase compared to the S layer. The observed effect is associated with the induced superconductivity in the N layer due to the proximity effect. The Josephson effect is demonstrated in NbN/Al–NbN–NbN/Al variable thickness bridges made of such SN bilayers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

On the Specific Features of the Plasma-Assisted MBE Synthesis of n{sup +}-GaN Layers on GaN/c-Al{sub 2}O{sub 3} Templates

The results obtained in a study of the synthesis of n{sup +}-GaN layers by plasma-assisted molecular-beam epitaxy on GaN/c-Al{sub 2}O{sub 3} templates are reported. In particular, a method is developed for the pre-epitaxial cleaning of the GaN surfaces of templates to remove foreign atoms. It is shown that, to form GaN layers of comparatively good quality, including those doped with silicon up to ~4.6 × 10{sup 19} cm{sup –3}, GaN template surfaces should be pre-epitaxially cleaned in a flow of activated nitrogen particles, with the substrate temperature increased from T{sub S} = 400 to 600°C and the substrate surface subsequently exposed to a flow of activated nitrogen at a fixed value of T{sub S} = 600°C for 1 h. After that the substrate temperature should be raised to T{sub S} = 700°C and the GaN surface finally cleaned by means of a procedure for gallium deposition/desorption.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effects of Remelting Current on Structure, Composition, Microsegregation, and Inclusions in Inconel 718 Electroslag Remelting Ingots

The macro- and microstructures, chemical compositions, microsegregations, and nonmetallic inclusion characteristics at different positions of the as-cast IN718 ingots produced by a laboratory-scale electroslag remelting (ESR) furnace under four remelting currents (150, 200, 250, and 300 A) were compared and investigated comprehensively. The results indicate that the average melting rate increases with the increasing remelting current, and the molten pool tends to be deeper. Thus, at the same position of the ESR ingots, the volume fraction of the segregated phase, the degree of elemental segregation, and the secondary dendrite arm spacing have the same tendency to increase with the increasing remelting current and show an increasing trend from the bottom to the top along the height of each ingot. If the current is set relatively low, the oxygen and nitrogen levels in the ingots increase, the conditions that make the contents and distributions of Al and Ti become unstable. In addition, the major nonmetallic inclusions in the IN718 ESR ingots are MgO·Al{sub 2}O{sub 3} complex oxide inclusions with a three-layer structure and (Nb,Ti)N nitrides. The volume fractions and mean equivalent diameters display a downward trend with the increasing remelting current. The size and quantity of these inclusions are always larger in the upper portions of the ingots than those in the lower portions.

36 MATERIALS SCIENCE↗