Search NASA⌕ Search

SEARCH · Search NASA

Results for “ANTIMONY 139”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Nuclear Data Sheets for A = 139

The experimental nuclear spectroscopic data for known nuclides of mass number 139 (Sn, Sb, Te, I, Xe, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy) have been evaluated and presented together with adopted properties for levels and gamma rays. This evaluation represents a revision of previous one (2001Bu16) by T.W. Burrows. Since then extensive new data have become available for many A=139 nuclides although, no excited state data are yet available for {sup 139}Sn, {sup 139}Sb, {sup 139}Tb, and {sup 139}Dy. The decay schemes of {sup 139}Sn, {sup 139}Sb, {sup 139}I, {sup 139}Tb and {sup 139}Dy nuclei are not known, and those for {sup 139}Gd and {sup 139}Eu are poorly known. Particle-transfer data are available for {sup 139}Ba, {sup 139}La, {sup 139}Ce and {sup 139}Pr. Limited high-spin data are available for {sup 139}Te, {sup 139}I, {sup 139}Cs, {sup 139}Ba, {sup 139}La and {sup 139}Ce, while such data are extensive for {sup 139}Pr, {sup 139}Nd, {sup 139}Pm, {sup 139}Sm, {sup 139}Eu and {sup 139}Gd. Recent {sup 139}Pm high-spin data from two independent studies using the same reaction and similar beam energy are in conflict and could be improved using state-of-the-art large gamma-detector arrays in contrast to the smaller arrays currently used. Cases for which no new experimental information are available since the last update have undergone checking resulting in some changes in the current work, but for the most part these are taken from the previous evaluations. Thus, the present work has greatly benefited from all prior NDS evaluations (2001Bu16, 1989Bu12, 1981Pe04, 1974Gr46), but at the same time data presented herein supersede those in the earlier evaluations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

Heterostructures with two dissimilar materials could offer unprecedented properties if one can carefully synthesize these heterostructures with atomically smooth interfaces and reduced number of recombination centers. InAs/GaSb-based heterostructures have technological importance for long wavelength infrared photodetectors if one can synthesize these materials with high-optical quality and high-carrier lifetime. In this work, the InAs/GaSb heterostructures with a different number of heterointerfaces and growth conditions were grown by solid source molecular beam epitaxy using valved cracker sources for both arsenic and antimony. Precise control of growth parameters and shutter sequences enabled abrupt InAs/GaSb heterointerfaces, as supported by a high-resolution transmission electron microscopic study. The temperature and power-dependent optical properties by photoluminescence (PL) spectroscopic analysis of InAs/GaSb heterostructures with 4 and 28 heterointerfaces displayed donor to the acceptor and the exciton bound to complex defects (V Ga Ga Sb ) 0 . Since the optical transition in PL measurements serves to determine the quality of the material, and the observed excitonic transitions from these InAs/GaSb heterostructures is an indication of high-quality materials. The high-carrier lifetimes of 139 ns to 185 ns from InAs/GaSb heterostructures were measured using microwave photoconductivity decay (μ-PCD) technique at room temperature. The observed increase in carrier lifetime is due to the decreasing number of Ga-related carrier recombination centers or defect complexes. This is further supported by the PL spectroscopic study. In addition, the carrier lifetime with different injection levels is supported by Shockley–Read–Hall recombination. We report these InAs/GaSb heterostructures with high-optical quality and high-carrier lifetimes would offer a path for the development of high-performance infrared photodetectors.

36 MATERIALS SCIENCE↗