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At least 19 records

Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS

Effect of Ga addition on the structure of vitreous As{sub 2}Se{sub 3} is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The “8-N” rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to “8-N” rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga{sub 2}Se{sub 3} crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. The existence of Ga–As and Se–Se bonds in the samples with higher Ga content is supported by present studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

Impurity iron atoms in vitreous arsenic-selenide As{sub 2}Se{sub 3} films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of ≥3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.

36 MATERIALS SCIENCE↗

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Singh, N. B.↗

Growth Mechanism of Nanowires: Ternary Chalcogenides

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Singh, N. B.↗

Design of Multifunctional Materials: Chalcogenides and Chalcopyrites

There is a strong need for developing multifunctional materials to reduce the cost of applied material without compromising the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve huge cost and resources including a multidisciplinary team of experts. Because of this reason, prediction of multifunctionality of materials before design and development should be evaluated. Chalcogenides and chalcopyrites are a very exciting class of materials for developing multifunctionality. Materials such as Gallium selenide GaSe and zinc selenide ZnSe have been proven to be excellent examples. GaSe is a layered material and very difficult to grow in large crystal. However, it's ternary and quaternary analogs such as thallium gallium selenide TlGaSe2, thallium gallium selenide sulfide TlGaSe2-xSs, thallium arsenic selenide Tl3AsSe3, silver gallium selenide AgGaGe3Se8, AgGaGe5Se12 and several others have shown great promise for multifunctionality. Several of these materials have shown good efficiency for frequency conversion (nonlinear optical NLO), electro-optic modulation, and acousto-optic tunable filters and imagers suitable for the visible, near-infrared wavelength, mid wave infrared (MWIR), long wave infrared (LWIR) and even up to Tera hertz wavelength (THW) regions. In addition, this class of materials have demonstrated low absorption coefficients and power handling capability in the systems. Also, these crystals do not require post growth annealing, show very large transparency range and fabricability.

Singh, N. B.↗

Double-Diffusive Convection During Growth of Halides and Selenides

Heavy metal halides and selenides have unique properties which make them excellent materials for chemical, biological and radiological sensors. Recently it has been shown that selenohalides are even better materials than halides or selenides for gamma-ray detection. These materials also meet the strong needs of a wide band imaging technology to cover ultra-violet (UV), midwave infrared wavelength (MWIR) to very long wavelength infrared (VLWIR) region for hyperspectral imager components such as etalon filters and acousto-optic tunable filters (AO). In fact AOTF based imagers based on these materials have some superiority than imagers based on liquid crystals, FTIR, Fabry-Perot, grating, etalon, electro-optic modulation, piezoelectric and several other concepts. For example, broadband spectral and imagers have problems of processing large amount of information during real-time observation. Acousto-Optic Tunable Filter (AOTF) imagers are being developed to fill the need of reducing processing time of data, low cost operation and key to achieving the goal of covering long-wave infrared (LWIR). At the present time spectral imaging systems are based on the use of diffraction gratings are typically used in a pushbroom or whiskbroom mode. They are mostly used in systems and acquire large amounts of hyperspectral data that is processed off-line later. In contrast, acousto-optic tunable filter spectral imagers require very little image processing, providing new strategies for object recognition and tracking. They are ideally suited for tactical situations requiring immediate real-time image processing. But the performance of these imagers depends on the quality and homogeneity of acousto-optic materials. In addition for many systems requirements are so demanding that crystals up to sizes of 10 cm length are desired. We have studied several selenides and halide crystals for laser and AO imagers for MWIR and LWIR wavelength regions. We have grown and fabricated crystals of several materials such as mercurous chloride, mercurous bromide, mercurous iodide, lead chloride lead bromide, lead iodide, thallium arsenic selenide, gallium selenide, zince sulfide zinc selenide and several crystals into devices. We have used both Bridgman and physical vapor transport (PVT) crystal growth methods. In the past have examined PVT growth numerically for conditions where the boundary of the enclosure is subjected to a nonlinear thermal profile. Since past few months we have been working on binary and ternary materials such as selenoiodides, doped zinc sulfides and mercurous chloro bromide and mercurous bromoiodides. In the doped and ternary materials thermal and solutal convection play extremely important role during the growth. Very commonly striations and banding is observed. Our experiments have indicated that even in highly purified source materials, homogeneity in 1-g environment is very difficult. Some of our previous numerical studies have indicated that gravity level less than 10-4 (-g) helps in controlling the thermosolutal convection. We will discuss the ground based growth results of HgClxBr(1-x) and ZnSe growth results for the mm thick to large cm size crystals. These results will be compared with our microgravity experiments performed with this class of materials. For both HgCl-HgBr and ZnS-ZnSe the lattice parameters of the mixtures obey Vagard's law in the studied composition range. The study demonstrates that properties are very anisotropic with crystal orientation, and performance achievement requires extremely careful fabrication to utilize highest figure of merit. In addition, some parameters such as crystal growth fabrication, processing time, resolution, field of view and efficiency will be described based on novel solid solution materials. It was predicted that very similar to the pure compounds solid solutions also have very large anisotropy, and very precise oriented and homogeneous bulk and thin film crystals is required to achieve maximum performance of laser or imagers. Some of the parameters controlling the homogeneity such as thermos-solutal convection driven forces can be controlled in microgravity environments to utilize the benefits of these unique materials.

Singh, N. B.↗

Optical Characteristics of Radiated Multifunctional Optical Materials

The performance of optical and electronic materials, and devices are affected significantly in space due to exposure from high energy radiations. We have been investigating the effect of -ray radiations on multifunctional binary and ternary selenide and halide crystals. These materials have shown excellent performance for the wavelength conversion in MWIR and LWIR regions, acousto-optics, and great potential for radiation detection. Crystals with high Z materials such as thallium, mercury and lead based compounds have great potential for the development of a variety of devices and components suitable for space applications. We will report on the characteristics of several halides including mercurous halides (Hg2X2, X= Cl, Br, I), Thallium mercury iodide (Tl4HgI4) and thallium arsenic selenide and thallium gallium selenide, and ternary selenides. These crystals, synthesized with high purity source materials, will be evaluated by studying optical characteristics and measuring resistivity after exposure to a 137Cs -ray source.

Radiation↗

Laser Desorption Ionization of As{sub 2}Ch{sub 3} (Ch = S, Se, and Te) Chalcogenides Using Quadrupole Ion Trap Time-of-Flight Mass Spectrometry: A Comparative Study

Laser desorption ionization using time-of-flight mass spectrometer afforded with quadrupole ion trap was used to study As{sub 2}Ch{sub 3} (Ch = S, Se, and Te) bulk chalcogenide materials. The main goal of the study is the identification of species present in the plasma originating from the interaction of laser pulses with solid state material. The generated clusters in both positive and negative ion mode are identified as 10 unary (S{sub p}{sup +/–} and As{sub m}{sup +/–}) and 34 binary (As{sub m}S{sub p}{sup +/–}) species for As{sub 2}S{sub 3} glass, 2 unary (Se{sub q}{sup +/–}) and 26 binary (As{sub m}Se{sub q}{sup +/–}) species for As{sub 2}Se{sub 3} glass, 7 unary (Te{sub r}{sup +/–}) and 23 binary (As{sub m}Te{sub r}{sup +/–}) species for As{sub 2}Te{sub 3} material. The fragmentation of chalcogenide materials was diminished using some polymers and in this way 45 new, higher mass clusters have been detected. This novel approach opens a new possibility for laser desorption ionization mass spectrometry analysis of chalcogenides as well as other materials. .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mid-gap phenomena in chalcogenide glasses and barrier-cluster-heating model

The physical mechanism of photoluminescence spectrum formation of chalcogenide glasses (CHG) belongs to the important unsolved problems in physics of non-crystalline materials. Photoluminescence is an important means of the electron spectrum investigation. PL spectrum in CHG is produced mostly in the middle of the band gap, and its profile is normal - Gaussian. Several features of PL spectra in CHG is still a great mystery. The aim of the paper is to make reader acquainted with the new insight into the problem. In this article we also deal with the issue of clarifying the nature of mid-gap absorption. From the experiments it is known that after excitation of the glass As{sub 2}S{sub 3} (or As{sub 2}Se{sub 3}) with primary radiation from Urbach-tail region the glass will be able to absorb the photons of low energy (IR) radiation from mid-gap region of spectra. This low photon absorption without action of the primary excitation radiation of the higher photon energy is impossible. Mid-gap absorption yields boost in the photoluminescence. The paper gives the reader the new insights into some, until now, unexplained effects and contexts in chalcogenide glasses from the position of barrier-cluster-heating model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Crystal growth of organics for nonlinear optical applications

The crystal growth and characterization of organic and inorganic nonlinear optical materials were extensively studied. For example, inorganic crystals such as thallium arsenic selenide were studied in our laboratory for several years and crystals in sizes over 2.5 cm in diameter are available. Organic crystals are suitable for the ultraviolet and near infrared region, but are relatively less developed than their inorganic counterparts. Very high values of the second harmonic conversion efficiency and the electro-optic coefficient were reported for organic compounds. Single crystals of a binary organic alloy based on m.NA and CNA were grown and higher second harmonic conversion efficiency than the values reported for m.NA were observed.

Singh, N. B.↗

Effects of Selenium on Mercury Bioaccumulation in a Terrestrial food Chain from an Abandoned Mercury Mining Region

Few reports of the relationship exist between mercury (Hg) and selenium (Se) from locations of severe Hg contamination in terrestrial environments. Here, we report the concentrations of Hg and Se as well as Se:Hg molar ratios in biotic samples collected from a region with a long history of Hg mining. Nitrogen isotopes (δ{sup 15}N) were analyzed to confirm the trophic levels. Results showed that bird feathers at the top trophic level exhibited the highest Hg concentrations, while the lowest concentrations were found in herbivorous insects, demonstrating a significant biomagnification across the food chain. In contrast, herbivorous insects of different types (generalists vs. specialized rice pests) exhibited both the highest and the lowest concentrations of Se, indicating a lack of biomagnification. Indeed, Se was correlated positively with Hg when Se:Hg ratios were greater than one, suggesting Se:Hg molar ratios can be a controlling influence on Hg in terrestrial organisms.

54 ENVIRONMENTAL SCIENCES↗

Flattened and broadband mid-infrared super-continuum generation in As{sub 2}Se{sub 3} based holey fiber

By using an As{sub 2}Se{sub 3} based holey fiber (HF) with a normal flat dispersion profiles, a flattened and broadband mid-infrared super-continuum generation is analysed. The transmission of an ultra-short pulse in the HF is numerically simulated by solving the generalized nonlinear Schrödinger equation under various parameters. The simulation results show that, by launching a pulse with a width of 50 fs and a peak power of 4.25 kW at 4375 nm into the 6 mm-long HF, a flat and broadband super-continuum at 3 dB level is successfully generated. The super-continuum covers the wavelengths from 3866 to 5958 nm which is the largest flat bandwidth reported in such a short fiber.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Modification of the plasma-prepared As–Se–Te films and creation on their base the planar waveguides by continuous laser writing

As a result of the previous experiments (Mochalov et al. in Opt Quant Electron 49(8):274:1–274:11, 2017), it was found that the Te-based chalcogenide films prepared by plasma deposition have a transparency window in the range from 1.2 to 20 μm and cannot be modified in the two-photon absorption mode, and in the linear absorption mode only the thermal effects were observed leading to crystallization of the films or their destruction. In this work, PECVD-prepared As–Se–Te films were modified by continuous laser irradiation of different wavelengths—473, 632.8 and 808 nm. For the modification, samples with compositions As{sub 40}Se{sub 50}Te{sub 10} and As{sub 40}Se{sub 44}Te{sub 16} were deposited on a substrate of epi-polished crystalline sapphire. This paper presents the results of studying of the effect of continuous laser radiation on the optical and structural properties of the chalcogenide films samples. Also, planar waveguided structures based on the As–Se–Te films were formed and investigated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Macroscopic and electric properties in the CdTe-AgI-As2Se3 system

Highlights: • Macroscopic properties of the pseudo-ternary CdTe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses. • Non-monotonic glass transition behaviour with increasing CdTe content. • Conductivity measurements of the pseudo-ternary CdTe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses. • Decrease of the Ag{sup +} ion transport in the CdTe-AgI-As{sub 2}Se{sub 3} glasses. • Blockage of silver-related preferential conduction pathways by Cd{sup 2+}. - Abstract: Chalcohalide glasses in the CdTe-AgI-As{sub 2}Se{sub 3} system were synthesised and characterised for the first time. Measurements including density, X-ray diffraction (XRD), and differential scanning calorimetry (DSC) were performed. The glass-forming range for (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Se{sub 3}){sub 0.5-x/2} compositions was found to be limited to x ≤ 0.25. The characteristic glass transition T{sub g}, crystallisation T{sub x}, and melting T{sub m} temperatures of the synthesised glasses are reported and the criteria, ΔT = T{sub x}-T{sub g}, was calculated to evaluate the glass forming ability. Total electric conductivity measurements have shown that the room temperature conductivity decreases drastically with increasing x accompanied by a simultaneous increase of the activation energy. The decrease in the Ag{sup +} ion transport cannot be explained by reduction in the total silver concentration alone and a possible structural origin of conductivity changes was proposed and discussed.

36 MATERIALS SCIENCE↗

Nuclear Data Sheets for A = 91

Experimental nuclear structure and decay data for all known A=91 nuclides (As, Se, Br, Kr, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd) have been evaluated. This evaluation, covering data received by 1 September 2013, supersedes the 1998 evaluation by C. M. Baglin published in Nuclear Data Sheets86, 1 (1999) (15 December 1998 literature cutoff), and subsequent evaluations by C. M. Baglin added to the ENSDF database for Kr, Sr and Zr (29 December 2000 literature cutoff) and by B. Singh for {sup 91}Tc (6 November 2000 literature cutoff)

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Electron-beam induced variation of surface profile in amorphous As{sub 20}Se{sub 80} films

Unusual profile variation of holographic surface relief gratings is detected in thin (2 μm) As{sub 20}Se{sub 80} chalcogenide films under e-beam irradiation: gratings of small periods were smoothed, whereas the gratings of larger periods increased their amplitudes. Irradiation was carried out in SEM, with 20 kV voltage and 8 nA current; the profiles of the irradiated areas were analyzed both by AFM and SEM. It is found that the kinetics of both flattening and growth followed by exponential law and took place due to lateral mass transport accelerated by e-irradiation. It is shown that the profile variation is mainly caused by competition between capillary forces and “chemical” forces induced by broken and deformed atomic bonds under e-beam irradiation. The kinetics of profile variation was calculated assuming that the mechanism of e-beam induced mass transfer is volume diffusion. The diffusion coefficients were estimated from the experimental data using theoretical expressions derived.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optimal packing size of non-ligated CdSe nanoclusters for microstructure synthesis

Structural and electrostatic properties of nanoclusters of CdSe of diameter 1–2 nm are studied with first principle calculations to determine the optimal size for synthesizing microstructures. Based on robustness of the core structure, i.e., the retention of tetrahedral geometry, hexagonal ring structure, and overall wu{sup ¨}rtzite structure to surface relaxations, we conclude that nanoclusters of ~2 nm diameter are the best candidates to form a dense microstructure with minimal interstitial space. Se-terminated surfaces retain a zigzag structure as Se atoms are pulled out and Cd atoms are pulled in due to relaxation, therefore, are best suited for inter-nanocluster formations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗