Search NASA⌕ Search

SEARCH · Search NASA

Results for “AUGER ELECTRON SPECTROSCOPY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate detector and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-level. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs. This work has been funded by J.D.'s PhD fellowship of the Fund of Scientific Research-Flanders (FWO-V) (Dossier No. 11U4516N). P.H. acknowledges support from Becas Chile-CONICYT. This research was also supported by the FWO Odysseus Program, the Belgian Hercules Stichting with the Project No. Her/08/25 and AKUL/13/19 and the KU Leuven project GOA "Fundamental challenges in Semiconductor Research". The authors would also like to thank Bastiaan Opperdoes and Ludwig Henderix for technical support. The work was supported by the U.S. Department of Energy (USDOE), Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, and performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory (PNNL). Battelle operates PNNL for the USDOE under contract DE-AC05-76RL01830.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2014

Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy

We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.

36 MATERIALS SCIENCE↗
NASA NTRS1975

Reaction of sulfur dioxide with modified 440C, studied by Auger electron spectroscopy and depth profiling

Auger electron spectroscopy and sputtering were used to study the interaction of SO2 with modified 440C, which is a nominally 77-wt%-Fe, 14-wt%-Cr, and 4-wt%-Mo bearing steel with C, S, Si, Ni, V, P, and Mn making up the balance. The sample was polycrystalline. Three temperatures were used: room temperature, 500 C, and 600 C. The reaction time was varied from 30 minutes to 2 hours. A surface cleaned of oxides was the starting point for each reaction. For reactions at 500 C, the major constituents Cr, O, Fe, and S were present in the surface film. At 600 C, the principal constituents of the film were Cr, O, and S with no Fe present. Therefore, a transition in film composition occurred between 500 and 600 C. Oxides were the primary constituents of the films at both temperatures. Room-temperature reactions indicated that SO2 adsorbed dissociatively, with approximately equal quantities of S and O on the surface. For the same reaction time (1 hr) and pressure, a strong temperature dependence of film thickness was observed. The film formed at 600 C was approximately seven times thicker than that formed at 500 C.

Ferrante, J.↗
DOE OSTI2015

Surface compositions of atomic layer deposited Zn{sub 1−x}Mg{sub x}O thin films studied using Auger electron spectroscopy

In this paper, the authors present Auger electron spectroscopy (AES) studies of Zn{sub 1−x}Mg{sub x}O (ZMO) films grown via interrupted atomic-layer deposition (ALD) techniques. The ZMO films were fabricated by alternating ALD deposition of ZnO and MgO layers up to 1000 cycles. Zn{sub 1−x}Mg{sub x}O films with progressively decreasing Mg/Zn ratios (Mg/Zn = 1/1, 1/2, 1/3, 1/4, 1/5, 1/6, 1/9, and 2/8, 3/12, 4/16, and 5/20) were fabricated for this study. The AES results exhibit an abrupt drop of Mg composition on the ZMO surface when the Mg/Zn < 1/3. Additionally, the surface composition ratios of O to Mg, O to Zn, and Mg to Zn were estimated with known Auger sensitivity factors. The results indicate that Mg ions diffuse into the bulk, forming Zn{sub 1−x}Mg{sub x}O alloys.

42 ENGINEERING↗
NASA NTRS1989

A study of native oxides of beta-SiC using Auger electron spectroscopy

Thermal and anodic oxide films of beta-SiC are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14 pct C. Dry oxide, on the other hand, has less than 3 pct C but is highly nonstoichiometric. The C content in the anodic oxide is 12 pct. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.

Chaudhry, M. Iqbal↗
NASA NTRS1990

Positron annihilation induced Auger electron spectroscopy

Recently, Weiss et al. have demonstrated that it is possible to excite Auger transitions by annihilating core electrons using a low energy (less than 30eV) beam of positrons. This mechanism makes possible a new electron spectroscopy, Positron annihilation induced Auger Electron Spectroscopy (PAES). The probability of exciting an Auger transition is proportional to the overlap of the positron wavefunction with atomic core levels. Since the Auger electron energy provides a signature of the atomic species making the transition, PAES makes it possible to determine the overlap of the positron wavefunction with a particular element. PAES may therefore provide a means of detecting positron-atom complexes. Measurements of PAES intensities from clean and adsorbate covered Cu surfaces are presented which indicate that approx. 5 percent of positrons injected into CU at 25eV produce core annihilations that result in Auger transitions.

Weiss, Alex↗
DOE OSTI2016

Time of flight spectrometer for background-free positron annihilation induced Auger electron spectroscopy

We describe a novel spectrometer designed for positron annihilation induced Auger electron spectroscopy employing a time-of-flight spectrometer. The spectrometer’s new configuration enables us to implant monoenergetic positrons with kinetic energies as low as 1.5 eV on the sample while simultaneously allowing for the detection of electrons emitted from the sample surface at kinetic energies ranging from ∼500 eV to 0 eV. The spectrometer’s unique characteristics made it possible to perform (a) first experiments demonstrating the direct transition of a positron from an unbound scattering state to a bound surface state and (b) the first experiments demonstrating that Auger electron spectra can be obtained down to 0 eV without the beam induced secondary electron background obscuring the low energy part of the spectra. Data are presented which show alternative means of estimating positron surface state binding energy and background-free Auger spectra.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1974

Auger electron spectroscopy and depth profile study of oxidation of modified 440C steel

Auger electron spectroscopy (AES) and sputtering were used to study selective oxidation of modified 440C steel. The sample was polycrystalline. Oxidation was performed on initially clean surfaces for pressures ranging from 1 x 10 to the minus 7th power to 1 x 10 to the minus 5th power torr and temperatures ranging from room temperature to 800 C. AES traces were taken during oxidation. In situ sputtering depth profiles are also obtained. A transition temperature is observed in the range 600 to 700 C for which the composition of the outer surface oxide changed from iron oxide to chromium oxide. Heating in vacuum about 5 x 10 to the minus 10 power torr to 700 C causes conversion of the iron oxide surface to chromium oxide.

Ferrante, J.↗
NASA NTRS1988

Auger electron spectroscopy of contrast-forming layers on metals

As shown by Auger electron spectroscopy, the layers formed during contrasting metallographic polished Cu and Ni with an apparatus using intense electron bombardment consist of metal sputtered from the Au, Fe, or Pb cathode. This layer takes up oxygen from the residual atmosphere. The mechanism of contrast enhancement is the same as that of vapor-deposited interference layers.

Hoffmann, Siegfried↗
DOE OSTI2012

Tracking electron-induced carbon contamination and cleaning of Ru surfaces by Auger electron spectroscopy

Extreme ultraviolet (EUV) radiation induced growth of carbon and oxygen desorption were investigated on a Ru surface by Auger electron spectroscopy (AES) in the presence and absence of additional photoelectrons (PEs) from a focusing Ru mirror. A decrease in EUV reflectivity with carbon growth in the presence of additional PEs has been observed. Conversely, a carbonaceous Ru surface was cleaned in sequential AES, and discussed in terms of secondary electron assisted dissociation of residual hydrocarbons and water molecules, followed by a chemical reaction between adsorbed carbon and oxygen atoms.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Electric transport across Sr{sub 1-x}La{sub x}CuO{sub 2}/Au/Nb planar tunnel junctions and x-ray photoelectron and Auger-electron spectroscopy on Sr{sub 1-x}La{sub x}CuO{sub 2} thin films

Thin-film planar tunnel junctions with the electron-doped infinite-layer superconductor Sr{sub 1-x}La{sub x}CuO{sub 2} (SLCO) with x{approx}0.15 as bottom electrode, a thin Au interlayer, and Nb as top electrode were fabricated and characterized. Measurements of electric transport across these junctions provide information on the interface and surface properties of the SLCO thin films. No Cooper pair tunneling is observed; however, nonlinear current-voltage characteristics give evidence for quasiparticle (QP) tunneling across a thin insulating SLCO barrier at the SLCO/Au interface, with a single gap value {approx}1.4 meV, originating from superconducting Nb. The absence of a superconducting SLCO gap in the QP conductance curves indicates a thin normal-conducting SLCO layer below the insulating SLCO barrier. To examine its origin, x-ray photoelectron spectroscopy (XPS) and x-ray Auger-electron spectroscopy (XAES) on SLCO thin films were performed. We observe a Cu valence of +1 in the SLCO surface layer (within {approx}3 nm thickness) and of +2 in deeper regions, as expected for fully oxidized CuO{sub 2} planes in the bulk. Hence, the XPS and XAES results for the SLCO films are consistent with the QP tunneling spectra observed for our planar SLCO/Au/Nb junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1975

Auger electron spectroscopy at high spatial resolution and nA primary beam currents

An experimental Auger microprobe system is described which incorporates a field-emission electron gun and total beam currents in the nanoampere range. The distinguishing characteristics of this system include a large multistation UHV specimen chamber, pulse counting and fully digital Auger signal-processing techniques, and digital referencing methods to eliminate the effects of beam instabilities. Some preliminary results obtained with this system are described, and it is concluded that field-emission electron sources can be used for high-resolution Auger electron spectroscopy with primary-beam spots of less than 100 nm and beam currents of the order of 1 nA.

Todd, G.↗
DOE OSTI2015

Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

The mechanism of Sn surface segregation during the epitaxial growth of GeSn on Si (001) substrates was investigated by Auger electron spectroscopy and energy dispersive X-ray spectroscopy. Sn surface segregation depends on the growth temperature and Sn content of GeSn layers. During Sn surface segregation, Sn-rich nanoparticles form and move on the surface during the deposition, which results in a rough surface owing to facet formation. The Sn-rich nanoparticles moving on the surface during the deposition absorb Sn from the periphery and yield a lower Sn content, not on the surface but within the layer, because the Sn surface segregation and the GeSn deposition occur simultaneously. Sn surface segregation can occur at a lower temperature during the deposition compared with that during postannealing. This suggests that the Sn surface segregation during the deposition is strongly promoted by the migration of deposited Ge and Sn adatoms on the surface originating from the thermal effect of substrate temperature, which also suggests that limiting the migration of deposited Ge and Sn adatoms can reduce the Sn surface segregation and improve the crystallinity of GeSn layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1973

Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

Ferrante, J.↗
NASA NTRS1974

Sliding of poly(vinyl chloride) on metals studied by Auger electron spectroscopy

The sliding of polyvinyl chloride on nickel, iron and S-Monel has been studied by Auger electron spectroscopy. Polymer was not transferred to the metals, rather shear appeared to take place at the interface. The metal was progressively chlorinated as the polymer made multiple passes on the surface. The thickness of this chlorine film was the order of one atomic layer. Electron-induced desorption studies indicate that the chlorine is chemisorbed to the metal. These results are interpreted as evidence for mechanically induced and/or thermal degradation of the polymer during sliding. Degradation products of HCl and Cl2 which chemisorb to the metal are evolved near the interface.

Pepper, S. V.↗