Active Pixel Sensor (APS) Testbed
Explore the source record for details and available documents.
Active Pixel Sensor (APS) Camera CMOS↗
SEARCH · Search NASA
Results for “Active Pixel Sensor (APS) Camera CMOS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
256X256 CMOS Active Pixel Sensor Camera-on-a-Chip
A CMOS imaging sensor is described that uses active pixel sensor (APS) technology which permits the integration of the detector array with on-chip timing, control and signal chain electronics. This sensor has been used to implement a CMOS APS camera-on-a-chip.
active↗
A Single Chip CMOS APS Digital Camera
A complete programmable digital camera-on-a-chip based on low power active pixel sensor technology is implemented as a single CMOS integrated circuit.
imaging sensor camera-on-a-chip digital camera↗
Integrated imaging sensor systems with CMOS active pixel sensor technology
This paper discusses common approaches to CMOS APS technology, as well as specific results on the five-wire programmable digital camera-on-a-chip developed at JPL. The paper also reports recent research in the design, operation, and performance of APS imagers for several imager applications.
double sampling↗
Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.
Space Microelectronics Image Sensors APS Digital I↗
Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.
Space Microelectronics Image Sensors APS Digital I↗
CMOS Image Sensors: Electronic Camera On A Chip
Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.
Space Microelectronics Image Sensors APS Digital I↗
JPL CMOS Active Pixel Sensor Technology
This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.
Space Microelectronics Image Sensors APS Digital I↗
High Energy Micron Scale Pixel Hybrid Detector
The objective of this technology development project has been to fabricate and characterize a new X-ray area image sensor innovation designed for high efficiency detection and imaging of hard X-rays (>20 KeV) with micron scale pixel resolution. A key technology component consists of a monolithic hybrid X-ray detector built by layering an amorphous Selenium X-ray photoconductor film directly deposited on a small pitch (7.8μm) CMOS active pixel readout array. A specific goal of this work is to provide a new detector tool to researchers working with synchrotron light sources, to extend the depth of exploration into nanoscale structures, and do so cost effectively. Early generation X-ray imaging detector tools fail to provide adequate resolving power and efficiency at high energies and our innovation provides a solution. A majority of proposed phase I tasks were completed. Those tasks included, in collaboration with KA Imaging, successful fabrication of specified a-Se layers on a 1Mpixel CMOS readout array to create the direct hybrid X-ray imaging array, packaging of the imaging array, assembly of electronics into a shielded detector box, loading user interface software for camera control and image capture, and performing initial (no X-ray) detector evaluation at Farrier Microengineering facilities. After initial tests, extensive testing using the X-ray beam line 1-BM source at Argonne National Laboratory Advanced Photon Source(ANL-APS) was performed. Imaging performance studies were conducted at multiple X-ray beam energies. Studies included X-ray response vs. X-ray energy, vs. applied detector field strength (HV), response linearity vs. integration time, MTF vs. beam energy, image lag measurements, and micron scale resolution pattern target imaging. This high energy micron scale X-ray detection technology is a first of a kind to be evaluated at the ANL-APS and is supported by Dr. Antonino Miceli, head of the detector physics group. Accomplishments include the first successful demonstration of a 1Mpix amorphous Selenium on CMOS readout direct hybrid X-ray imaging detector at a DOE sponsored National Laboratory. Modeled performance predictions were confirmed, proving micron scale resolution as well as an order of magnitude increase in conversion efficiency over conventional scintillator detector performance. A discovery of evidence of propagation-based phase contrast edge enhancement was unplanned and will be exploited in future experiments. This phase 1 technology demonstration verifies the efficacy of proposed high energy micron scale pixel X-ray hybrid a-Se imaging array products. The new detector products will cost effectively replace early generation detector technologies that currently fail to address increasing demand for tools to study nano structures and physical processes at high X-ray energies above 20keV. For example, current systems for transmission X-ray microscopy have low efficiency and available large pixel (~55µm) direct detectors do not offer sufficient resolution for Bragg fringe imaging at high energies. This detector innovation will solve these inadequacies. The new detector technology will compete in a $50M scientific X-ray detector market, growing at 6%, and will benefit Microtomography(µCT), X-ray diffractometry (XRD), Coherent Diffraction Imaging (CDI) applications. One application specified by Dr. Miceli at ANL is the 3D reconstruction of compact crystals at high energies requires small pixel high efficiency X-ray detectors. Farrier Microengineering, working with colleagues at KA Imaging and the University of Waterloo, successfully achieved the critical objectives of the Phase I proposal. We have proven the technical feasibility of this innovation by building and successfully testing a 1Mpixel a-Se/CMOS hybrid direct X-ray imaging array. Our commercialization roadmap of detector products will be implemented during a phase II project. We will demonstrate a migration of the technology to larger detector array sizes, improved temporal performance with detector layer engineering, and improved environmental and operational stability. Manufacturability and cost effectiveness are key objectives and product designs will leverage current state of the art CMOS wafer fabrication quality and volume manufacturing economics.
36 MATERIALS SCIENCE↗