Site-Specific Sectioning and SEM Imaging of MOSFET Active Regions for Device Failure Analysis
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Nichols, Sean Michael [Sandia National Laboratorie↗
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Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers
Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Visually undistorted thin film electronic devices
Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.
Hammond, Scott R.↗
Characterization of Spurious Charge in SENSEI Skipper-CCDs
Skipper Charge-Coupled Devices (Skipper-CCDs) are a leading technology in the search for sub-GeV dark matter and coherent elastic neutrino-nucleus scattering. A key background for rare-event searches with these detectors arises from "spurious charge" -- single-electron events generated when charges are transferred through the active region to the serial register, and across the serial register to the readout stage. We present a characterization of spurious charge in both the active region and the serial register of SENSEI Skipper-CCDs, and show that, in a well-shielded low-background environment, the dominant contribution originates in the serial register during Skipper readout, when horizontal clocks are held at constant voltage between pixel transfers. Motivated by this finding, we develop a "tri-level" clocking scheme in which the held-low phase is raised to an intermediate voltage during readout to suppress trap-mediated charge generation. Using the SENSEI detector near the MINOS cavern, we measure a serial-register single-electron density of $(2.9 \pm 0.1) \times 10^{-5}$ electrons/pixel/image under standard SENSEI readout conditions, reduced to $(4.0 \pm 0.4) \times 10^{-6}$ electrons/pixel/image with tri-level clocking -- a factor of $\sim$7 improvement. This technique offers a promising path to lower backgrounds in current and future Skipper-CCD experiments.
Wu, Yikai [YITP, Stony Brook; SUNY, Stony Brook]↗
Field-dependent carrier transport in implanted isolation region of GaN lateral power devices
Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.
Sadek, Mansura (ORCID:0000000322588338)↗
Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.
Current crowding↗
A Regional Phase Amplitude Model of 2-D Attenuation for North America
We analyzed seismic attenuation patterns across the North America using over 70,000,000 Lg wave amplitudes recorded by the various networks at frequencies of 0.1-32 Hz. Our inversion solved for laterally varying attenuation, site terms, moments, and apparent stress following Phillips et al., (2016). The inversion was anchored by independently constrained: corner frequencies (via coda spectral ratios) to control the attenuation-stress tradeoff and moment measurements of teleseismic (GCMT, USGS) and regional (St. Louis University and UC Berkeley) earthquakes to provided absolute scaling. The quality factor (Q) shows clear regional patterns: low values in coastal, volcanic, and tectonically active regions, and high values in stable areas like the Great Plains and major plateaus throughout North America. These 2-D Q models enable improved regional source characterization, magnitude estimation, and yield determination.
58 GEOSCIENCES↗
Enhancing Oxygen Evolution Reaction and Stability in Proton-Conducting Solid Oxide Electrolysis Cells (p-SOECs) via a Porous Gadolinium-Doped Ceria Interlayer
Proton-conducting solid oxide electrolysis cells (p-SOECs) offer a promising pathway for intermediate temperature (400-600 °C) hydrogen production. However, they still face critical challenges related to sluggish oxygen evolution reaction (OER) kinetics and low Faradaic efficiencies. Here, in this work, we demonstrate that introducing a thin (~0.8 µm) porous Gd 0.1 Ce 0.9 O 1.95 (GDC) interlayer between a BaCo 0.8 Zr 0.1 Zn 0.1 O 3-δ (BCZZ) oxygen electrode and electrolyte significantly enhances p-SOEC performance. The GDC interlayer reduces polarization resistance by 48% (0.54 to 0.28 O cm 2 ) and increases Faradaic efficiency from 63% to 81% at -0.8 A/cm 2 and 600 °C. GDC interlayer p-SOECs display elevated effective H 2 current densities compared to control p-SOECs and reach up to -1.22 A/cm 2 at 1.3 V. Mechanistic studies on the interactions between GDC and BCZZ reveal that GDC intrinsically promotes OER kinetics by significantly reducing the polarization activation energy (Ea p ), dropping from 1.45 to 1.22 eV for full p-SOECs and 0.98 to 0.76 eV for symmetric cells. This promotional effect is localized in the electrochemically active region near the electrolyte interface. Durability testing for over 1500 hours under 50% H 2 O conditions indicates that the GDC interlayer also improves long-term stability, with a degradation rate 53% lower than control p-SOECs. By pinpointing the interfacial region where GDC exerts its promotional effect, highlighting its role in enhancing OER kinetics, and establishing interlayer engineering as a powerful technique, this work provides a unified pathway to simultaneously improve p-SOEC activity, Faradaic efficiency, and durability.
08 - HYDROGEN↗
Spatial mapping of the localized corrosion behavior of a magnesium alloy AZ31B tungsten inert gas weld
Sections of a magnesium alloy, AZ31B, joined with tungsten inert gas (TIG) welding, were examined with scanning electrochemical microscopy (SECM) and scanning Kelvin probe force microscopy (SKPFM) to investigate corrosion mechanisms by correlating observed corrosion behavior with weld-affected microstructural variations. Insight into the changing nature of the galvanic couples between weld zones and at localized microgalvanic sites were investigated using SECM and SKPFM to map both electrochemically active regions and Volta potential differences across the weld-affected zones. The formation of an Al-Zn solidification network in the fusion zone (FZ) at and near the TIG weld epicenter differs from the outer heat-affected zone (HAZ), where intermetallic particles (IMPs) are the notable secondary phase from the magnesium matrix. These microstructures were mapped with SKPFM before and after brief exposure to a salt solution, revealing micro-galvanic couples as the main driving force to corrosion initiation and propagation within each zone. The IMPs and Al-Zn solidification network act as strong cathodes and govern the corrosion processes. The galvanic coupling and evolution of the intrinsic corrosion behavior between the weld zones is explained by monitoring the hydrogen evolution reaction (HER) with SECM over time. Anodically induced cathodic activation is confirmed for this welded material, as micro-galvanic couples between microstructural features are found to transition over time to broad electrochemically active areas within the weld-affected zones, resulting in polarity reversal as time of exposure proceeds.
Anodically induced cathodic activation↗
On Alfvénic turbulence of solar wind streams observed by Solar Orbiter during March 2022 perihelion and their source regions
It has been recently accepted that the standard classification of the solar wind solely according to flow speed is outdated, and particular interest has been devoted to the study of the origin and evolution of so-called Alfvénic slow solar wind streams and to what extent such streams resemble or differ from fast wind. In March 2022, Solar Orbiter completed its first nominal phase perihelion passage. During this interval, it observed several Alfvénic streams, allowing for characterization of fluctuations in three slow wind intervals (AS1-AS3) and comparison with a fast wind stream (F) at almost the same heliocentric distance. This work makes use of Solar Orbiter plasma parameters from the Solar Wind Analyzer (SWA) and magnetic field measurements from the magnetometer (MAG). The magnetic connectivity to the solar sources of selected solar wind intervals was reconstructed using a ballistic extrapolation based on measured solar wind speed down to the (spherical) source surface at 2.5 R s below which a potential field extrapolation was used to map back to the Sun. The source regions were identified using SDO/AIA observations. A spectral analysis of in situ measured magnetic field and velocity fluctuations was performed to characterize correlations, Alfvénicity, normalized cross-helicity, and residual energy in the frequency domain as well as intermittency of the fluctuations and spectral energy transfer rate estimated via mixed third-order moments. A machine learning technique was used to separate proton core, proton beam, and alpha particles and to study v − b correlations for the different ion populations in order to evaluate the role played by each population in determining the Alfvénic content of solar wind fluctuations. The comparison between fast wind and Alfvénic slow wind intervals highlights the differences between the two solar wind regimes: The fast wind is characterized by larger amplitude fluctuations, and magnetic and velocity fluctuations are closer to equipartition of energy. In fact the Alfvénic slow wind streams appear to be on a spectrum of wind types, with AS1, originating from open field lines neighboring active regions and displaying similarities with the fast wind in terms of fluctuation amplitude and turbulence characteristics, but not with respect to the alpha particles and proton beams. The other two slow streams differed both in their sources as well as plasma characteristics, with AS2 coming from the expansion of a narrow coronal hole corridor and AS3 from a region straddling a pseudostreamer. The latter displayed the coldest and highest density but the slowest stream with the smallest fluctuation amplitude and greatest magnetic energy excess. It also showed the largest scatter in proton beam speeds and the greatest difference in speed between proton beam and alpha particles. This study shows how the old fast–slow solar wind dichotomy, already called into question by the observations of slower Alfvénic solar wind streams, should further be refined, as the Alfvénic slow wind, originating in different solar wind regions, show significant differences in density, temperature, and proton and alpha-particle properties in the inner heliosphere. The observations presented here provide the starting point for a better understanding of the origin and evolution of different solar wind streams as well as the evolving turbulence contained within.
magnetohydrodynamics (MHD)↗
Mechanisms enabling reconfigurability and long-term retention in vanadium oxide electrochemical memory
Phase coexistence in nanoscale electrochemical random-access memory (ECRAM) has recently been demonstrated to enable both information storage and extraordinary reconfigurability. These proof-of-principle demonstrations have left the mechanistic details of such a process unresolved. Particularly, the mechanisms that stabilize the multiple phases, and the underlying processes behind sustained memory retention, remain unclear, and are necessary to design such devices. Here we report microscale ECRAM devices composed of VO𝑥, which enables us to directly probe the active region in an operando fashion using optical techniques. Using Raman mapping, we show the phase coexistence driven by the electrochemical injection of O vacancies to be spatially uniform (i.e., with no filaments). The stability was observed to be unusually long, with 1% loss over 14 years in ambient conditions. First-principles calculations of the oxygen vacancy formation energies in VO 𝑥 further support the thermodynamic coexistence of multiple VO 𝑥 phases and clarify the origin of the observed long-term retention in the ECRAM devices. Further, we demonstrate single devices that can be voltage programmed to exhibit synaptic, neuronal, and reconfigurable logic gate functionalities. Furthermore, we not only uncover the phase coexistence mechanism that may help device design, but also demonstrate the circuit-level applications of reconfigurability.
Electrical conductivity↗
Review of the August 1972 and March 1989 (Allen) Space Weather Events: Can We Learn Anything New From Them?
Abstract Updated summaries of the August 1972 and March 1989 space weather events have been constructed. The features of these two events are compared to the Carrington 1859 event and a few other major space weather events. It is concluded that solar active regions release energy in a variety of forms (X‐rays, EUV photons, visible light, coronal mass ejection (CME) plasmas and fields) and they in turn can produce other energetic effects (solar energetic particles (SEPs), magnetic storms) in a variety of ways. It is clear that there is no strong one‐to‐one relationship between these various energy sinks. The energy is often distributed differently from one space weather event to the next. Concerning SEPs accelerated at interplanetary CME (ICME) shocks, it is concluded that the Fermi mechanism associated with quasi‐parallel shocks is relatively weak and that the gradient drift mechanism (electric fields) at quasi‐perpendicular shocks will produce harder spectra and higher fluxes. If the 4 August 1972 intrinsic magnetic cloud condition (southward interplanetary magnetic field instead of northward) and the interplanetary Sun to 1 au conditions were different, a 4 August 1972 magnetic storm and magnetospheric dawn‐to‐dusk electric fields substantially larger than the Carrington event would have occurred. Under these special interplanetary conditions, a Miyake et al. (2012), https://doi.org/10.1038/nature11123 ‐like extreme SEP event may have been formed. The long duration complex 1989 storm was probably greater than the Carrington storm in the sense that the total ring current particle energy was larger.
Tsurutani, Bruce T.↗
Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer
Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Linewidth narrowing in self-injection locked lasers: Effects of quantum confinement
This paper explores the impact of gain medium on linewidth narrowing in integrated self-injection locked III–V/SiN lasers, theoretically and experimentally. We focus on the effects of carrier densities of states in zero- and two-dimensional structures due to quantum-dot and quantum-well confinement. The theoretical approach includes (a) multimode laser interaction to treat mode competition and wave mixing, (b) quantum-optical contributions from spontaneous emission, and (c) composite laser/free-space eigenmodes to describe outcoupling and coupling among components within an extended cavity. For single-cavity lasers, such as distributed feedback lasers, the model reproduces the experimentally observed better linewidth performance of quantum-dot active regions over quantum-well ones. When applied to integrated III–V/SiN lasers, our analysis indicates Hz-level linewidth performance for both quantum-dot and quantum-well gain media due to overcoming the difference in carrier-induced refractive index by incorporating a high-Q SiN passive resonator. Trade-offs are also explored between linewidth, output power, and threshold current.
Cavity quantum electrodynamics↗
Consistent inclusion of triple substitutions within a coupled cluster based static quantum embedding theory
We have previously proposed the MPCC static embedding framework for quantum chemistry that self-consistently couples a high-level coupled cluster (CC) treatment of the fragment (active region) with a lower level, Møller–Plesset perturbation treatment of the environment. Our initial implementation was limited to single and double (SD) substitutions, with CCSD for the fragment and first-order perturbative SD amplitudes for the environment. Here, we extend the MPCC embedding treatment to triple substitutions, which is essential for achieving chemical accuracy in energy differences. To this end, we employ a CCSDT solver for the fragment subsystem. For the environment subsystem, we construct a perturbative estimate of the triples amplitudes, explicitly accounting for feedback from all fragment amplitudes. The resulting approach is denoted MPCCSDT(pt). We further introduce a more complete formulation in which feedback from the environment amplitudes to the fragment amplitudes is also included. This scheme involves an iterative treatment of the environment triples amplitudes and is denoted MPCCSDT(it). In addition, we assess the accuracy of the previously proposed low-level method by introducing a modified low-level approach that incorporates a lowest-order treatment of selected long-range effects, including spin fluctuations and charge polarization. All resulting approaches may be viewed as post-CCSD(T) methods. We therefore consider test cases for which CCSD(T) exhibits substantial deviations from CCSDT. These include (i) single- and triple-bond stretching in F 2 and N 2 , (ii) bond dissociation energies of selected molecules from the W4-11 dataset, and (iii) total atomization energies of transition metal hydrides. Our results demonstrate that inclusion of triples amplitudes at the fragment level alone is insufficient; a perturbative treatment of the environment triples amplitudes is required. For many energy-difference applications, feedback from the environment triples amplitudes to the fragment amplitudes is not essential, but it does play a role in the very challenging CoH and FeH molecules. A very interesting finding from our study is that in some challenging cases, we need an improved (second-order) perturbative method for the SD amplitudes, going beyond the first-order one used in our earlier work. In conclusion, considering both cost and accuracy, the MP2CCSDT(pt) model is the most promising for future applications among the candidates considered here.
Shee, Avijit [University of California, Berkeley, ↗
Spectral and small-signal electroluminescence analysis of carrier dynamics in dual-color InGaN/GaN light-emitting diodes
Here, we study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities, consistent with its narrower bandgap, while emission from the blue QW is more significant at higher current densities, consistent with its reduced quantum confined Stark effect and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, our measurements suggest that the effective active region contributing most strongly to radiative recombination corresponds to approximately two to three QWs on the p-GaN side, indicating limited carrier transport to more distant QWs in the structures studied.
36 MATERIALS SCIENCE↗
Implementation of the D1S Methodology for Shutdown Dose Rate Calculations in the OpenMC Monte Carlo Particle Transport Code
We present an implementation of the direct one-step (D1S) methodology for shutdown dose rate (SDR) calculations in the OpenMC Monte Carlo particle transport code. In addition to being the first fully open-source D1S implementation, it is also the first to require no ad hoc source code or nuclear data library modifications. The code can seamlessly switch between production of prompt and decay photons based on a user input parameter, and the decay data needed for decay photon generation are made available through a depletion chain file, which is already used for OpenMC’s built-in depletion/activation solver. A set of Python functions significantly eases the burden of computing and applying time correction factors needed to properly account for the time dependence of radionuclide activity. To assess the accuracy of the D1S implementation, SDR calculations have been carried out for three problems: a prism of iron irradiated by 14-MeV neutrons, the ITER port plug computational benchmark, and the Frascati Neutron Generator (FNG) ITER dose rate benchmark problem from the Shielding INtegral Benchmark Archive and Database (SINBAD). For each of these problems, comparisons were made to calculations using the rigorous two-step (R2S) method. The results on the iron prism problem illustrate how the D1S method achieves superior spatial resolution compared to the R2S method without the need for spatial discretization of the activation regions. The D1S and R2S results for the ITER port plug benchmark agree well with previously reported results in the literature. While the D1S results are 10% to 15% lower than the R2S results, this may be due to stochastic uncertainty and/or spatial discretization in the R2S calculations. On the FNG dose rate benchmark problem, the D1S method produces dose rate estimates that are within 4% of the dose rates predicted using a cell-based R2S workflow. The D1S estimates of the SDR are also in reasonable agreement with the experimental measurements and show the same basic trends that have been observed in previous works. A qualitative analysis of the execution time and uncertainty for the R2S and D1S workflows suggests that the D1S method would attain a higher figure of merit.
D1S method↗
Characterization of lateral amorphous selenium photodetectors for low-photon and VUV detection at cryogenic temperatures
The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies ≥80% and area under the curve (AUC) ≥ 0.85 using as few as ∼ 6800 incident 401 nm photons, corresponding to ∼ 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.
Amorphous selenium↗