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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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14 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

The abundance of AsH3 in Jupiter

Both ground-based and airborne observations of the AsH3 Q-branch at 2126/cm, in conjunction with newly-analyzed laboratory comparison spectra at AsH3, are employed in the derivation of a new estimate of Jovian As abundance. The mole fraction on AsH3 in the Jovian atmosphere is 0.22 + or - 0.11 ppb; this is merely 0.5 times the solar abundance, and a factor-of-9 less than the mole fraction found in Saturn, duplicating the pattern noted in the relative abundance of P in these two planets and furnishing a useful constraint for models of heavy element incorporation in the outer planets' gaseous envelopes.

Noll, Keith S.↗
DOE OSTI2020

Materials Data on AsH3 by Materials Project

AsH3 crystallizes in the cubic P4_232 space group. The structure is three-dimensional. As3- is bonded in a 6-coordinate geometry to six equivalent H1+ atoms. All As–H bond lengths are 2.14 Å. H1+ is bonded in a single-bond geometry to two equivalent As3- and one H1+ atom. The H–H bond length is 0.84 Å.

36 MATERIALS SCIENCE↗
NASA NTRS1991

The spectrum of Saturn from 1990 to 2230/cm - Abundances of AsH3, CH3D, CO, GeH4, NH3, and PH3

An analysis is presented of the abundances and vertical distributions of all known absorbers in the 5-micron spectrum of Saturn, in view of previously unpublished observations, synthetic spectra of each atmospheric constituent, and an atmospheric model for synthesizing Saturn's spectrum in order to make comparisons with observations. The model used encompasses the abundances of all gaseous absorbers, their vertical distributions, clouds, and the thermal and reflected solar components of planetary flux. A coherent understanding is in this way obtained of both the many variables affecting Saturn's 5-micron spectrum and the similarities between Jupiter and Saturn.

Noll, Keith S.↗
NASA NTRS1988

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Manasevit, H. M.↗
NASA NTRS1988

Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

The decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric-pressure flow system with the use of D2 to label the reaction products which are analyzed in a time-of-flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas-phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid-base adduct that forms and subsequently eliminates CH4.

Larsen, C. A.↗
NASA NTRS1989

Arsine in Saturn and Jupiter

New spectra of Saturn and Jupiter are reported that show a prominent, heretofore unidentified absorption near 2126/cm. The observation is interpreted as unambiguous evidence for the presence of arsine, AsH3. The abundance of AsH3 appears to be almost a factor of two higher in Saturn than in Jupiter. The observed enrichments are consistent with the core instability model for the formation of giant planets. Models of arsenic chemistry that predict strong depletions of AsH3 at temperatures below 370 K are not consistent with the observations, suggesting that vertical convection or perhaps some other mechanism inhibits depletion. Arsenic is the first new element identified in a planetary atmosphere since germanium was found in Jupiter a decade ago.

Noll, Keith S.↗
NASA NTRS1989

The use of metalorganics in the preparation of semiconductor materials. VIII - Feasibility studies of the growth of Group III-Group V compounds of boron by MOCVD

The MOCVD growth of B-As and B-P films on Si, sapphire, and Si-on-sapphire substrates is described; in this process, trimethylborane (TMB) or triethylborane (TEB) is pyrolyzed in the presence of AsH3 or PH3 in an H2 atmosphere. The procedures employed are outlined, and the results are presented in graphs, tables, and micrographs. It is found that the growth rate of the primarily amorphous films is dependent on the TMB or TEB concentration but approximately constant for TEB and AsH3 at 550-900 C. The nominal compositions of films grown using TMB are given as B(12-16)As2 and B(1-1.3)P. Carbon impurities and significant stress, bowing, and crazing are observed in the films grown on Si substrates, with the highest carbon content in the films grown from TMB and PH3.

Manasevit, H. M.↗
NASA NTRS1978

Chemical structure of the deep atmosphere of Jupiter

Equilibrium abundances calculated for a system of over 500 compounds of 27 selected elements along a nominal Jupiter adiabat are reported. Several species predicted to be of negligible abundance in the visible upper troposphere if chemical equilibrium is exactly attained are found to be potential tracers of rapid vertical motions. Vertical mixing of certain species, especially CO, PH3, AsH3, GeS, and GeH4, may provide detectable quantities of these species near the visible cloudtops due to quenching and incomplete equilibration of the rapidly rising, rapidly cooling gas. Observational prospects for detecting such tracers of deep circulation are discussed in the light of the spectroscopic detection of CO in the 5-micron window on Jupiter and the confirmation of PH3 on both Jupiter and Saturn.

Barshay, S. S.↗
NASA NTRS1979

Thermodynamics of selected trace elements in the Jovian atmosphere

The thermochemistry of several hundred compounds of twelve selected trace elements (Ge, Se, Ga, As, Te, Pb, Sn, Cd, Sb, Tl, In, and Bi) has been investigated for solar composition material along a Jupiter adiabat. The results indicate that AsF3, InBr, TlI, and SbS, in addition to CO, PH3, GeH4, AsH3, H2Se, HCl, HF, and H3BO3 proposed by Barshay and Lewis (1978), may be potential chemical tracers of atmospheric dynamics. The reported observation of GeH4 is interpreted on the basis of new calculations as implying rapid vertical transport from levels where the temperature is greater than or equal to 800 K. Upper limits are also set on the abundances of many gaseous compounds of the elements investigated.

Fegley, B., Jr.↗
NASA NTRS1982

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.

Hovel, H. J.↗
NASA NTRS1984

Growth of InSb and InAs(1-x)Sb(x) by OM-CVD

Organometallic chemical vapor deposition (OM-CVD) growth of InSb and InAs(1-x)Sb(x) has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine (AsH3) on (100) GaAs, (100) InSb, and (111)-B InSb substrates. InSb with excellent morphology was achieved on both (100) InSb and (111)-B InSb substrates. The measured electron mobility at 300 K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 sq cm/V-s at a carrier concentration of ND-NA = 2.0 x 10 to the 16th per cu cm. Carrier concentration of ND-NA = 1.2 x 10 to the 15th per cu cm has been measured at 77 K. InAs(1-x)Sb(x) (x = 0.07-0.75) with mirror-like surfaces have been grown on (100) InSb and InAs substrates. This composition range of x between 0.55 and 0.75 (Eg = 0.1 eV) has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and InSb substrate orientations are also discussed.

Chiang, P. K.↗
NASA NTRS1991

Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells

Some p/n graded-bandgap Al(x)Ga(1-x)As solar cells were fabricated and show AMO conversion efficiencies in excess of 15 percent without antireflection (AR) coatings. The emitters of these cells are graded between 0.008 is less than or equal to x is less than or equal to 0.02 during growth of 0.25 to 0.30 micron thick layers. The keys to achieving this performance were careful selection of organometallic sources and scrubbing oxygen and water vapor from the AsH3 source. Source selection and growth were optimized using time-resolved photoluminescence. Preliminary radiation-resistance measurements show AlGaAs cells degraded less than GaAs cells at high 1 MeV electron fluences, and AlGaAs cells grown on GaAs and Ge substrates degrade comparably.

Timmons, M. L.↗
NASA NTRS1994

Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.

Welser, R. E.↗
NASA NTRS1994

Nucleation, Growth, and Strain Relaxation of Lattice-Mismatched III-V Semiconductor Epitaxial Layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111) B GaAs substrates. The InAs epilayer / GaAs substrate combination has been chosen because the lattice-mismatch is severe (approx. 7.20%), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites Instead of the more common In(x)Ga(1-x)As alloy, we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters -- susceptor temperature, TMIn flux, and AsH3 flux -- have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approx. 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer / substrate interface.

Welser, R. E.↗