Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds]
Growth of unexpected phases from a composite target of BiFeO 3 :BiMnO 3 and/or BiFeO 3 :BiCrO 3 has been explored using pulsed laser deposition. The Bi 2 FeMnO 6 tetragonal phase can be grown directly on SrTiO 3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO 3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO 2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO 3 :BiCrO 3 target. Pure X2 phase can be obtained on CeO 2 -buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO 3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO 2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.