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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

The Origin of Improved Performance in Boron‐Alloyed Silicon Nanoparticle‐Based Anodes for Lithium‐Ion Batteries

Stabilizing the solid electrolyte interphase (SEI) remains a key challenge for silicon‐based lithium‐ion battery anodes. Alloying silicon with secondary elements like boron has emerged as a promising strategy to improve the cycle life of silicon anodes, yet the underlying mechanism remains unclear. To address this knowledge gap, how boron concentration influences battery performance is systematically investigated. These results show a near‐monotonic increase in cycle lifetime with higher boron content, with boron‐rich electrodes significantly outperforming pure silicon. Additionally, silicon‐boron alloy anodes exhibit nearly three times longer calendar life than pure silicon. Through detailed mechanistic analysis, alternative contributing factors are systematically ruled out, and it is proposed that improved passivation arises from a strong permanent dipole at the nanoparticle surface. This dipole, formed by undercoordinated and highly Lewis acidic boron, creates a static, ion‐dense layer that stabilizes the electrochemical interface, reducing parasitic electrolyte decomposition and enhancing long‐term stability. These findings suggest that, within the SEI framework, the electric double layer is an important consideration in surface passivation. This insight provides an underexplored parameter space for optimizing silicon anodes in next‐generation lithium‐ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2023

The Addition of Boron to Melt-Spun Fe-6.5%Si Ribbons

Fe-6.5%Si has higher electrical resistivity, lower magnetocrystalline anisotropy, and lower magnetostriction than traditional Fe-3.2%Si silicon steel. The reduced iron losses of Fe-6.5%Si render it a highly favorable candidate for high-speed motors and transformers. However, large-scale production of wide Fe-6.5%Si tape by rapid solidification can be challenging mainly because of its high melting point. In this work, boron is alloyed to Fe-6.5%Si to reduce its melting temperature and interfacial energy to improve the alloy’s processability. Boron additions from 0.01 wt.% to 2.24 wt.% into Fe-6.5%Si and its effect on ribbon thickness, grain size, magnetic, and mechanical properties were studied. Further, minor boron alloying significantly changed the melt pool stability and wetting on the quench wheel and in turn increased the quench rate with minimum impact on the magnetic saturation and ductility. Boron addition of < 0.06 wt.% was also found beneficial to the magnetic property of the alloy by lowering both its hysteresis and eddy current losses.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗
DOE OSTI2023

Superior zero thermal expansion dual-phase alloy via boron-migration mediated solid-state reaction

Rapid progress in modern technologies demands zero thermal expansion (ZTE) materials with multi-property profiles to withstand harsh service conditions. Thus far, the majority of documented ZTE materials have shortcomings in different aspects that limit their practical utilization. Here, we report on a superior isotropic ZTE alloy with collective properties regarding wide operating temperature windows, high strength-stiffness, and cyclic thermal stability. A boron-migration-mediated solid-state reaction (BMSR) constructs a salient “plum pudding” structure in a dual-phase Er-Fe-B alloy, where the precursor ErFe 10 phase reacts with the migrated boron and transforms into the target Er 2 Fe 14 B (pudding) and α-Fe phases (plum). The formation of such microstructure helps to eliminate apparent crystallographic texture, tailor and form isotropic ZTE, and simultaneously enhance the strength and toughness of the alloy. These findings suggest a promising design paradigm for comprehensive performance ZTE alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2020

3D Printing with Mixed Powders of Boron Carbide and Al Alloy

Laser additive manufacturing with mixed powders of boron carbide and aluminum alloy is investigated. Parameters such as laser power, scan speed, scan pattern, and hatching space are systematically evaluated and optimized to obtain the desired density and porosity. These results show that the AM part contains 20 wt% boron carbide and 80 wt% aluminum alloy, which are well mixed and synthesized during the melting process. Its mechanical properties are close to those of aluminum. A thin-wall structure based two dimensional and three dimensional radial collimators were fabricated with well-controlled geometry for neutron scattering measurement.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Deformation of binary and boron-doped Ni 3 Al alloys at high pressures studied with synchrotron x-ray diffraction

In situ x-ray synchrotron diffraction experiments were carried out on nickel-based high-strength superalloys under pressure to understand their deformation mechanism using a diamond anvil cell (DAC). Radial x-ray diffraction determines the room-temperature equations of state and yield strengths of binary Ni 3 Al alloy and 500 ppm boron-doped Ni 3 Al to pressures of 20 and 46 GPa, respectively. Crystallographic preferred orientations observed in these superalloys due to anisotropic stress field in DAC indicate the onset of plastic deformation. Inverse pole figure analysis reveals that the underlying deformation mechanisms change from an octahedral slip to a simultaneous activation of octahedral and cube slips upon doping with boron. The yield-strength values were found to increase with pressure and are comparable to those determined from axial diffraction experiments. The results indicate that the yield strength of Ni 3 Al:B is about 0.5 GPa higher (at pressures below 20 GPa) due to grain boundary strengthening by boron. It is shown that due to high elastic anisotropy of Ni 3 Al alloy, the yield-strength estimations from diffraction experiments strongly depend on the micromechanical model used to convert the measured elastic strains into stresses.

42 ENGINEERING↗
DOE OSTI2024

Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al 1–x B x N, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al 1–x B x N films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Enhanced negative thermal expansion of boron-doped Fe 43 Mn 28 Ga 28.97 B 0.03 alloy

Enhanced negative thermal expansion (NTE) properties are achieved by introducing a little amount of boron in the Fe 43 Mn 28 Ga 28.97 B 0.03 alloy. As a result, this alloy shows a giant NTE coefficient of alpha(1) = -79.7 x 10 -6 K -1 in a wide temperature range from 277 K to 136 K. Compared to the NTE characteristics in Fe 43 Mn 28 Ga 29 , the NTE operation temperature window has expanded by 74% with the corresponding coefficient of thermal expansion increased by 57% within the NTE temperature window for the boron-doped Fe 43 Mn 28 Ga28.97B0.03. Additionally, in-situ synchrotron high-energy X-ray diffraction results suggest that by boron substitution, the large unit cell volume change across martensitic transformation and the wide phase transition temperature interval are responsible for the pronounced NTE behavior in Fe 43 Mn 28 Ga 28.97 B 0.03 . Moreover, for the Fe 43 Mn 28 Ga 28.97 B 0.03 NTE material, the compressive strength and strain are significantly improved compared with that of Fe 43 Mn 28 Ga 29 . The present study indicates that Fe 43 Mn 28 Ga 28.97 B 0.03 with enhanced NTE across martensitic transformation may be used for practical application as thermal-expansion compensators.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effect of Solute Elements on Boron Segregation in Boron-Containing Steels

The addition of boron to steel alloys results in an increase in both hardenability and casting defects. The casting difficulties are predicted to stem from a metatectic reaction, δ + γ → L + γ, where a fully solidified material begins to locally remelt as the temperature decreases. Another possible source of casting defects is a boride-rich phase that is predicted to remain liquid at low temperatures. To experimentally determine which reaction is the likely source of the casting defects, the predicted reactions and the effect of solute elements on those reactions are investigated. Levitation zone melting is used to control segregation in a ternary Fe–C–B alloy and a commercial 22MnB5 alloy. Carbon segregation and a peritectic reaction result in a peritectic jump during directional solidification where the first directionally solidified (DS) zone undergoes δ-bcc solidification followed by a peritectic jump to steady state planar solidification of γ-fcc in the second DS zone. The presence of other solute elements in the zone melted 22MnB5 alloy lead to a breakdown in the planar solidification front before steady state solidification could be achieved in the second DS zone. With a cellular solid/liquid interface, boron-rich intercellular liquid formed low melting iron boro-carbide particles. The controlled solidification conditions in a levitation zone melter were unable to prevent ~0.003 wt% boron from segregating to high enough levels to form boride particles. Therefore, it is likely that during commercial casting, the formation of the low melting boride phase from interdendritic segregation is a key source of the casting issues.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Complete the first phase of the comprehensive characterization of repair welding performed on irradiated Ni alloy 182

This report describes the research activities on post-weld evaluation and characterization of the quality and properties of welds made on the first phase of repair welding campaign on irradiated Ni alloy 182. The equipment and capabilities of the campaign were developed jointly by the U.S. Department of Energy, Office of Nuclear Energy, Light Water Reactor Sustainability Program, the Electric Power Research Institute, Long Term Operations Program (and the Welding and Repair Technology Center), and Oak Ridge National Laboratory. Irradiated nickel alloy 182 with doped boron ranging from 5 wppm to 15 wppm, were laser welded in the hot cell. The weld samples were cross-sectioned and characterized. The significant, on-going effort to weld irradiated alloys with high helium concentrations and comprehensively analyze the results will eventually yield validated repair techniques and guidelines for use by the nuclear industry in extending the operational lifetimes of nuclear power plants.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Thermodynamics of boron incorporation in BGaN

We study the thermodynamics of boron (B) incorporation into gallium nitride (GaN) using first-principles calculations. In the dilute limit, we have calculated the formation energies of different configurations of the B impurity in GaN and found that substitution on the cation site is favored over substitution on the anion site. Furthermore, under p-type conditions, interstitial boron can become the more favorable configuration and will ultimately limit the p-type conductivity. At higher B concentrations we use the generalized quasi-chemical approximation to elucidate the thermodynamic stability of boron gallium nitride (BGaN) alloys. We also investigate the effects of strain, which will be present if BGaN alloys are grown pseudomorphically on a GaN substrate.Without strain, B incorporation at typical growth conditions is limited to about 1.4% at 800 °C. Pseudomorphic strain raises the limit to 3.0% at the same temperature, close to experimentally observed levels of B incorporation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Empirical Investigation of Properties for Additive Manufactured Aluminum Metal Matrix Composites

Laser additive manufacturing with mixed powders of aluminum alloy and silicon carbide (SiC) or boron carbide (B4C) is investigated in this experiment. With various mixing ratios of SiC/Al to form metal matrix composites (MMC), their mechanical and physical properties are empirically investigated. Parameters such as laser power, scan speed, scan pattern, and hatching space are optimized to obtain the highest density for each mixing ratio of SiC/Al. The mechanical and thermal properties are systematically investigated and compared with and without heat treatment. It shows that 2 wt% of SiC obtained the highest strength and Young’s modulus. Graded composite additive manufacturing (AM) of MMC is also fabricated and characterized. Various types of MMC devices, such as heat sink using graded SiC MMC and grid type three-dimensional (3D) neutron collimators using boron carbide (B4C), were also fabricated to demonstrate their feasibility for applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Surface normal emissivity measurements in uncoated and oxidized B-coated plasma facing component materials in the long wavelength infrared spectrum

Accurate surface emissivity measurements are integral to the fidelity of the infrared thermography diagnostic evaluation in fusion reactors. The emissivities of ATJ TM graphite, Sigrafine® (R6510) graphite, and TZM alloy were measured as a function of temperature in accordance with the Contact Thermometer Method in the ASTM E1933 standard. Samples were heated resistively in a high-vacuum chamber, and the surface temperature was monitored using a surface thermocouple and a Telops long-wavelength infrared camera. The surfaces of Sigrafine® graphite and TZM alloy samples were coated with 10 nm and 20 nm layers of oxidized boron and were also measured in the uncoated condition. The thickness was assessed from measurement by a quartz crystal microbalance (QCM). ATJ TM graphite was uncoated. The measured emissivity of ATJ TM Graphite ranged from 0.82 to 0.83, uncoated Sigrafine® graphite ranged from 0.76 to 0.98, and uncoated TZM alloy ranged from 0.11 to 0.13. Oxidized boron coatings increased the emissivity of the TZM alloy to 0.18–0.23 but decreased the emissivity of Sigrafine® graphite to 0.56–0.66 for a 10 nm coating and to 0.65–0.74 for a 20 nm coating. In contrast to the expected blackbody radiance, the emissivity of uncoated Sigrafine® graphite and TZM alloy did not monotonically increase with temperature from 100 to 500 ℃.

Emissivity↗
DOE OSTI2025

Laser repair welding of irradiated alloy 182

Welding repair of irradiated nickel-based alloys, such as Alloy 182, poses a significant challenge due to helium-induced cracking (HeIC) and grain boundary degradation (GBD) in the heat affected zone, driven by helium accumulation at grain boundaries and welding-induced tensile stresses. This study investigates the weldability of irradiated Alloy 182 up to 15 wppm doped boron using both conventional laser welding and the Auxiliary Beam Stress Improved (ABSI) laser welding technique. While HeIC was observed at the weld toe of the entry pass in both methods due to the higher effective heat input associated with the initial pass directly on the base metal, no additional cracking occurred elsewhere, even at elevated helium concentrations. Optical and scanning electron microscopy analysis revealed that the ABSI technique, which introduces additional compressive stresses to counteract solidification-induced tensile stresses, significantly reduced GBD formation, lowering its total count from 1,230 to 339 and decreasing both average and maximum GBD lengths. In conclusion, these results demonstrate that the ABSI technique is a promising approach to mitigate helium-induced damage and improve the weldability of irradiated Alloy 182, offering a viable solution for structural repairs for long-term operation of existing nuclear reactors.

grain boundary degradation↗
DOE OSTI2021

Ultrawide-bandgap semiconductors: An overview

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. as such, this focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (Al x Ga 1– x N), boron nitride (BN), diamond, β-phase gallium oxide (β-Ga 2 O 3 ), and a number of other UWBG binary and ternary oxides.

36 MATERIALS SCIENCE↗