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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1955

Spatial Burnout in Water Reactors with Nonuniform Startup Distributions of Uranium and Boron

Spatial burnout calculations have been made of two types of water moderated cylindrical reactor using boron as a burnable poison to increase reactor life. Specific reactors studied were a version of the Submarine Advanced Reactor (sAR) and a supercritical water reactor (SCW) . Burnout characteristics such as reactivity excursion, neutron-flux and heat-generation distributions, and uranium and boron distributions have been determined for core lives corresponding to a burnup of approximately 7 kilograms of fully enriched uranium. All reactivity calculations have been based on the actual nonuniform distribution of absorbers existing during intervals of core life. Spatial burnout of uranium and boron and spatial build-up of fission products and equilibrium xenon have been- considered. Calculations were performed on the NACA nuclear reactor simulator using two-group diff'usion theory. The following reactor burnout characteristics have been demonstrated: 1. A significantly lower excursion in reactivity during core life may be obtained by nonuniform rather than uniform startup distribution of uranium. Results for SCW with uranium distributed to provide constant radial heat generation and a core life corresponding to a uranium burnup of 7 kilograms indicated a maximum excursion in reactivity of 2.5 percent. This compared to a maximum excursion of 4.2 percent obtained for the same core life when w'anium was uniformly distributed at startup. Boron was incorporated uniformly in these cores at startup. 2. It is possible to approach constant radial heat generation during the life of a cylindrical core by means of startup nonuniform radial and axial distributions of uranium and boron. Results for SCW with nonuniform radial distribution of uranium to provide constant radial heat generation at startup and with boron for longevity indicate relatively small departures from the initially constant radial heat generation distribution during core life. Results for SAR with a sinusoidal distribution rather than uniform axial distributions of boron indicate significant improvements in axial heat generation distribution during the greater part of core life. 3. Uranium investments for cylindrical reactors with nonuniform radial uranium distributions which provide constant radial heat generation per unit core volume are somewhat higher than for reactors with uniform uranium concentration at startup. On the other hand, uranium investments for reactors with axial boron distributions which approach constant axial heat generation are somewhat smaller than for reactors with uniform boron distributions at startup.

Fox, Thomas A.↗
NASA NTRS1992

Charge generation by heavy ions in power MOSFETs, burnout space predictions, and dynamic SEB sensitivity

The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented.

Stassinopoulos, E. G.↗
NASA NTRS2000

The Physics of Boiling at Burnout

The basic elements of a new experimental approach for the investigation of burnout in pool boiling are presented. The approach consists of the combined use of ultrathin (nano-scale) heaters and high speed infrared imaging of the heater temperature pattern as a whole, in conjunction with highly detailed control and characterization of heater morphology at the nano and micron scales. It is shown that the burnout phenomenon can be resolved in both space and time. Ultrathin heaters capable of dissipating power levels, at steady-state, of over 1 MW/square m are demonstrated. A separation of scales is identified and it is used to transfer the focus of attention from the complexity of the two-phase mixing layer in the vicinity of the heater to a micron-scaled microlayer and nucleation and associated film-disruption processes within it.

Theofanous, T. G.↗
NASA NTRS2010

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Gate Rupture (SEGR)↗
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗
NASA NTRSDate not supplied

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment

We compare the failure mechanism and performance of a silicon carbide (SiC) semi-superjunction (semi-SJ) power DMOSFET against pure SJ and conventional DMOSFET when struck by a single heavy ion. The Single-Event Burnout (SEB) failure mechanism was identified as the thermal runaway from second breakdown resulting in mesoplasma formation. The semi-SJ design shifts the mesoplasma location from the drift/substrate interface seen in the control device structures to a location along the center of the P-pillar and closer towards the DMOSFET surface, thus significantly improving the SEB threshold voltage. The SEB threshold voltage varies with pillar width and ratio of pillar thickness to drift layer thickness. A maximum value of SEB threshold voltage is reached when the pillar to drift layer ratio is 0.9 and the pillar width is 2.4 μm. The semi-SJ SEB/breakdown voltage ratio is 100% and 13% higher than the pure SJ and conventional DMOSFET, respectively. Using a new figure of merit (FOM), which accounts for the tradeoff between SEB threshold voltage and on-state performance, we find that the SiC semi-SJ DMOSFET achieves a FOM that is 1.8 and 8 times higher than SJ and conventional DMOSFET, respectively, making the semi-SJ a competitive candidate for radiation hardened applications.

SiC↗
NASA NTRS2022

Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs

We explore and elucidate physical failure mechanisms in a 4H-SiC, high voltage, superjunction (SJ) vertical DMOSFET from a single heavy ion strike using three-dimensional electro-thermal transient simulations. The single-event burnout (SEB) failure is thermal runaway from second breakdown, initiated by impact ionization and terminated with mesoplasma formation, at the center of the P-pillar/N+ substrate interface. We also demonstrate that the SEB performance of this SiC SJ DMOSFET is insensitive to the pillar width but sensitive to the strike location with ion strike at the P-pillar causing SEB at a lower blocking voltage than at the N-pillar. Compared to commercially available 1.2 kV blocking-rated non-SJ DMOSFETs, which have been demonstrated to survive SEB up to 525 V, the SJ DMOSFET increases SEB survival threshold voltage (VSEB) by a factor of 2.2, making it close to 1200 V, while the on-resistance is increased by only 11%. Using our recently developed figure of merit (FoM), which considers the trade-off between VSEB and on-state performance, we find that the SiC SJ DMOSFET achieves a FoM that is 14 times better, making it superior to conventional 1.2 kV SiC DMOSFETs for long-term radiation-tolerant operation in space applications.

Silicon Carbide↗
NASA NTRS1966

Lamp automatically switches to new filament on burnout

Lamp with primary and secondary filaments has a means for automatic switching to the secondary filament at primary filament burnout. Lamp failures and resultant expenses during oscillograph printing are appreciably reduced.

Ingle, W. B.↗
NASA NTRS1980

Soot formation and burnout in flames

The amount of soot formed when burning a benzene/hexane mixture in a turbulent combustor was examined. Soot concentration profiles in the same combustor for kerosene fuel are given. The chemistry of the formation of soot precursors, the nucleation, growth and subsequent burnout of soot particles, and the effect of mixing on the previous steps were considered.

Prado, B.↗
NASA NTRS1995

Unsteady planar diffusion flames: Ignition, travel, burnout

In microgravity, a thin planar diffusion flame is created and thenceforth travels so that the flame is situated at all times at an interface at which the hydrogen and oxygen meet in stoichiometric proportion. If the initial amount of hydrogen is deficient relative to the initial amount of oxygen, then the planar flame will travel further and further into the half volume initially containing hydrogen, until the hydrogen is (virtually) fully depleted. Of course, when the amount of residual hydrogen becomes small, the diffusion flame is neither vigorous nor thin; in practice, the flame is extinguished before the hydrogen is fully depleted, owing to the finite rate of the actual chemical-kinetic mechanism. The rate of travel of the hydrogen-air diffusion flame is much slower than the rate of laminar flame propagation through a hydrogen-air mixture. This slow travel facilitates diagnostic detection of the flame position as a function of time, but the slow travel also means that the time to burnout (extinction) probably far exceeds the testing time (typically, a few seconds) available in earth-sited facilities for microgravity-environment experiments. We undertake an analysis to predict (1) the position and temperature of the diffusion flame as a function of time, (2) the time at which extinction of the diffusion flame occurs, and (3) the thickness of quench layers formed on side walls (i.e., on lateral boundaries, with normal vectors parallel to the diffusion-flame plane), and whether, prior to extinction, water vapor formed by burning will condense on these cold walls.

Fendell, F.↗
NASA NTRS1960

Determination of Azimuth Angle at Burnout for Placing a Satellite Over a Selected Earth Position

Expressions are presented for relating the satellite position in the orbital plane with the projected latitude and longitude on a rotating earth surface. An expression is also presented for determining the azimuth angle at a given burnout position on the basis of a selected passage position on the earth's surface. Examples are presented of a satellite launched eastward and one launched westward, each passing over a selected position sometime after having completed three orbits. Incremental changes from the desired latitude and longitude due to the earth's oblateness are included in the iteration for obtaining the azimuth angles of the two examples. The results for both cases are then compared with those obtained from a computing program using an oblate rotating earth. Changes from the selected latitude and longitude resulting from incremental changes from the burn-out azimuth angle and latitude are also analyzed.

Skopinski, T. H.↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRS2019

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.

Mcpherson, Joseph A.↗