Materials Data on BaGaSiH by Materials Project
BaGaSiH crystallizes in the trigonal P3m1 space group. The structure is three-dimensional. Ba2+ is bonded in a distorted trigonal non-coplanar geometry to three equivalent Si4- and three equivalent H1- atoms. All Ba–Si bond lengths are 3.45 Å. All Ba–H bond lengths are 2.57 Å. Ga3+ is bonded in a distorted single-bond geometry to three equivalent Si4- and one H1- atom. All Ga–Si bond lengths are 2.53 Å. The Ga–H bond length is 1.76 Å. Si4- is bonded in a 6-coordinate geometry to three equivalent Ba2+ and three equivalent Ga3+ atoms. H1- is bonded to three equivalent Ba2+ and one Ga3+ atom to form corner-sharing HBa3Ga tetrahedra.
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