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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Li interaction-induced phase transition from black to blue phosphorene

A comprehensive first-principle calculation has been carried out and revealed that at sufficiently high Li concentration and certain well-defined configurations a phase transition from black to blue phosphorene can take place. Blue phosphorene, a newly predicted allotrope of phosphorus, possesses unique crystalline and electronic structure and is a promising candidate, not only for fundamental research but also for electronic and optoelectronic applications. Methods to growth high quality blue phosphorene layers are highly desirable but challenging. Here, a novel kinetic pathway to grow blue phosphorene layers from black phosphorene layers via Li intercalation is proposed based on first principle study. This study pointed out that Li atoms intercalated in black phosphorene could act as ‘catalyst’ in the ‘reactive region’ of the lone pair of P atoms, leading to a P-P bond breaking and subsequently, a local structural transformation from orthorhombic lattice to an assembly of parallel narrow nanoribbons with rhombohedra-like symmetry. During Li deintercalation, these nanoribbons are self-mended and form blue phosphorene layers. The interlayer distance was found 4.60 Å for double layer with AA stacking and 4.13 Å for multilayer with ABC stacking, respectively, indicating a monolayer blue phosphorene can be mechanically exfoliated. Furthermore, this study also points out the possibility of new phases in other systems, where intercalation can lead to an unexpected structural phase transition and even a discovery of novel materials.

36 MATERIALS SCIENCE↗

Structural and Thermoelectric Properties of Black Arsenic–Phosphorus

Here, we report the structural and temperature dependent transport properties of As x P 1-x (x = 0, 0.2, 0.5, 0.83, 1) alloys. It is observed that black phosphorous (BP)-related phonon modes in the alloy samples are red-shifted with increasing arsenic concentration, while black arsenic-related modes in these samples are blue-shifted with increasing phosphorus concertation. As the arsenic concentration, x increases from 0 to 1, the 4-probe resistance of the As x P 1-x alloys is found to decrease by more than 3 orders of magnitude. The transport studies reveal that samples with the highest arsenic concentration (x = 1 and 0.83) show metallic behavior in the temperature dependence of resistance with a small thermopower at room temperature with an anomalous temperature dependence. In contrast, the samples with high phosphorus concentration (x = 0, 0.2, and 0.5) show very large thermopower values at room temperature reaching a value as high as 803 μV/k for x = 0.2. The temperature dependence of the thermopower of these samples can be well described by the variable range hopping (VRH) mechanism in two-dimensions (2-d), S ~ T 1/3 . Similarly, their 4-probe resistance (R) values can be fitted with 2-d VRH mechanism, R ~ exp(T -1/3 ).

36 MATERIALS SCIENCE↗

Blue phosphorene reactivity on the Au(111) surface

Abstract The synthesis of blue phosphorene by molecular beam epitaxy (MBE) has recently come under the spotlight due to its potential applications in electronic and optoelectronic devices. However, this synthesis remains a significant challenge. The surface reactivity between the P atoms and the Au atoms should be considered for the P/Au(111) system. In the MBE process, the temperature of the substrate is a key parameter for the growth of blue phosphorene. During the initial growth stage, irregularly shaped Phosphorus clusters grow on top of Au(111) surface at room temperature. When the substrate temperature is increased, these clusters transform into a phosphorene-like structure with a honeycomb lattice. An atom exchange reaction is observed between the P and first layer Au atoms under thermal activation at higher temperature, where the P atoms replace Au atoms to form a blue phosphorene structure within the top Au layer and at the step edges.

Materials Science↗

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗

Current status of silicon solar cell technology

Recent advances in solar cell technology have led to the development of laboratory cells with efficiencies above 15% and production cells with efficiencies in the area of 13%. The increased output is largely the result of increases in the short-circuit current. The most significant gain in the amount of light entering the cell has been obtained through surface texturing by chemical etching techniques. Sheet resistances resulting from phosphorus diffusion in the 800 C temperature range yield junction depths on the order of 0.1 micrometer, leading to significant increases in the blue region of the cell spectral response. The inclusion of a back surface field in 10 ohm-cm cells has produced an increase in open-circuit voltage of about 50 mV and an increase in the minority carrier lifetime. It appears that a low emitter efficiency of the diffused region is the cause of poor voltages. Future research will be primarily directed toward correcting this deficiency and toward the development of low cost production methods.

Brandhorst, H. W., Jr.↗

New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)

The goal of this project was to develop novel approaches to patterning of dopants in the rear fingers of interdigitated back contact (IBC) Si solar cells to reduce the cost of manufacturing this high-efficiency-potential cell architecture. The work throughout this project can be divided into four categories: (a) development of dopant patterning technique using laser scribed Si contacts masks that are mechanically aligned with ~10 μm resolution to the underlying Si substrate; (b) measuring dopant spreading profiles in the isolation region between n- and p-type dopant fingers during plasma-enhanced chemical vapor deposition (PECVD) of doped hydrogenated amorphous silicon (a-Si:H) via shadow masks, and dopant desorption and re-adsorption during high-temperature annealing; (c) understanding the role of dopant compensation on the shunt resistance in contaminated isolation regions through analysis of defect-enhanced compensation; and (d) simulation and fabrication of passivated two-sided grid and back-contact solar cells to demonstrate the use of direct dopant patterning in cell fabrication. For the passivated two-sided grid solar cells, masked deposition was used to demonstrate an improvement in the blue response of the cell by creating a shallow front emitter. During development of the masked PECVD patterning process, we measured 3-D dopant profiles using secondary ion mass spectrometry. After deposition, in the masked region, the phosphorus dopant tail was >100 µm at concentrations >10 19 cm -3 while the boron dopant tail was shorter. During high-temperature crystallization of doped a-Si:H films to polycrystalline Si (poly-Si), phosphorus atoms spread by desorbing from the poly-Si surface and re-adsorbing onto intrinsic poly-Si on adjacent wafers that were separated by several millimeters. These contamination mechanisms resulted in a decrease in resistivity from ~10 5 Ω·cm for intrinsic poly-Si to ~10 -1 Ω·cm for contaminated poly-Si. Mitigation strategies for each contamination mechanism were developed to maintain a resistivity of ~10 5 Ω·cm between doped fingers. During fabrication of the 209 cells created during this project, it was found that despite contamination of the IBC gap through the abovementioned mechanisms, high shunt resistances and FF ~75% were still reached. Investigation into this led to the discovery of defect-enhanced compensation which exists within highly defective poly-Si when net doping concentrations reach the value of defect density (~10 18 cm -3 for many poly-Si films). Simulations guided us in the fabrication of IBCs and the cells fabricated were able to meet the year-end goals for BP 2 and 3 of 15% and 17% IBC cell efficiency, as well as the BP 4 goal of a 1% absolute increase in efficiency for PERC-like devices. However, the most efficient cell created during this project of 18.6% fell short of the 21% final project target. While the champion device fell short in V oc and J sc , many devices fabricated were able to reach the necessary goals of ~40 mA/cm 2 , ~700 mV, and ~75% FF required for a 21% device. The results generated from this project were disseminated through 11 conference presentations and proceedings. Presentations included oral talks at 2019 IEEE PVSC, 2019 MRS Fall Meeting, 2020 PVSEC-30 and 2021 IEEE PVSC, as well as poster presentations at 2020 IEEE PVSC and 2021 SiPV. The project resulted in 2 peer reviewed publications – one published in IEEE Journal of Photovoltaics and one in ACS Applied Energy Materials. The information gained in this project will aid in development of improved processes for fabrication of high-efficiency solar cells and other areas of the semiconductor device industry as well. The IBC cells will also pave the way for higher efficiency tandem devices. Through further manufacturing of high-efficiency solar cells, more of the world’s energy demands can be met through renewable sources, helping to stave off the worst effects that may come about from global climate change.

14 SOLAR ENERGY↗

The use of a benign fast-growing cyanobacterial species to control microcystin synthesis from Microcystis aeruginosa

Introduction Microcystis aeruginosa(M. aeruginosa), one of the most abundant blue-green algae in aquatic environments, produces microcystin by causing harmful algal blooms (HABs). This study investigated the combined effects of nutrients and competition among cyanobacterial subpopulations on the synthesis of microcystin-LR. Methods Under varying nitrogen and phosphorus concentrations, cyanobacterial coculture, and the presence of algicidal DCMU, the growth was monitored by optical density analysis or microscopic counting, and the microcystin production was analyzed using high-performance liquid chromatography-UV. Furthermore, growth and toxin production were predicted using a kinetic model. Results and discussion First, coculture with the fast-growing cyanobacteriumSynechococcus elongatusUTEX 2973 (S. elongatus) reducedM. aeruginosabiomass and microcystin production at 30°C. Under high nitrogen and low phosphorus conditions,S. elongatuswas most effective, limitingM. aeruginosagrowth and toxin synthesis by up to 94.7% and 92.4%, respectively. Second, this biological strategy became less effective at 23°C, whereS. elongatusgrew more slowly. Third, the photosynthesis inhibitor DCMU (3-(3,4-dichlorophenyl)-1,1-dimethylurea) inhibitedM. aeruginosagrowth (at 0.1 mg/L) and microcystin production (at 0.02 mg/L). DCMU was also effective in controlling microcystin production inS. elongatus–M. aeruginosacocultures. Based on the experimental results, a multi-substrate, multi-species kinetic model was built to describe coculture growth and population interactions. Conclusion Microcystin from representative toxin-producingM. aeruginosacan be controlled by coculturing fast-growing benign cyanobacteria, which can be made even more efficient if appropriate algicide is applied. This study improved the understanding of the biological control of microcystin production under complex environmental conditions.

Microbiology↗