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In vitro studies using boron-labeled antibodies and elemental boron as neutron target in therapy for tumors and cancer
The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.
The structure of noncrystalline, chemically vapour-deposited boron fibres was investigated by computer modelling the experimentally obtained X-ray diffraction patterns. The diffraction patterns from the models were computed using the Debye scattering equation. The modelling was done utilizing the minimum nearest-neighbour distance, the density of the model, and the broadening and relative intensity of the various peaks as boundary conditions. The results suggest that the fibres consist of a continuous network of randomly oriented regions of local atomic order, about 2 nm in diameter, containing boron atoms arranged in icosahedra. Approximately half of these regions have a tetragonal structure and the remaining half a distorted rhombohedral structure. The model also indicates the presence of many partial icosahedra and loose atoms not associated with any icosahedra. The partial icosahedra and loose atoms indicated in the present model are in agreement with the relaxing sub-units which have been suggested to explain the anelastic behavior of fibre boron and the loosely bound boron atoms which have been postulated to explain the strengthening mechanism in boron fibres during thermal treatment.
Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.
Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.
An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.
Ablative and insulating properties of outgassed boron nitride and boron nitride-phenolic resin composite
Static oxidation and compatibility of boron nitride and boron nitride composite
Boron nitride and boron nitride composite under high temperatures in air and vacuum for various time periods, discussing thermal shock and oxidation resistance
Boron filaments for possible use as reinforcing phase in composite materials for aerospace structures
Boron filaments for use as reinforcing phase in composite materials for aerospace structures
The chemical vapor deposition of boron filament is generally considered to be limited by the diffusion of the reactive species to the hot substrate. From concentration gradient considerations and from experimental measurements it is concluded that the product species (HCl) is more likely to be involved in limiting the deposition rate. Comparison of theoretically calculated and experimentally measured deposition rates show that the rate is generally partially limited by diffusion and partially by the surface reaction rate (desorption) of HCl. The relative amounts of surface reaction or diffusion rate impedance were determined as a function of temperature and gas velocity. The temperature coefficient for the desorption of HCl was found to be 52 Kcal/mole.
High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.
The abundance of the following elements in the L 16-19 No. 118 regolith sample, zone V was determined by isotopic dilution using a mass spectrometer equipped with a scattering ion source: Li -- 9.8, Be -- 1.2, Be -- 2.6, and Ti -- 1.92 percent. For comparison, these same elements were measured in samples of surface material returned by Apollo 11, Apollo 12, and Apollo 14, and in the terrestrial reference standard diabase W-1. The content of Li, Be, and B in the Luna 16 sample is nearly the same as in the Apollo 11 surface material. The surface material returned by Apollo 12 and Apollo 14 contains two to four times more of these elements. However, the abundance ratios of Li, Be, and B are remarkably similar in the surface materials from the four different lunar regions. With respect to basaltic achondrites and especially with respect to chondrites, the lunar basalts are enriched in Li, Be, and B up to 100 times.
Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.
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The assumption that boron is a moderately volatile element is examined. It was demonstrated that interior pieces of chondrites contain significantly less boron than had been thought to be indigenous to this type of meteorite. The mean and range of boron abundances in 16 internal pieces of 10 chondrites were significantly smaller than in 126 pieces of 40 chondrites with unknown terrestrial histories. A new value of the cosmic abundance of boron was determined using the geometric average of the results from interior pieces of 10 chondrites. Based upon the thermodynamic assessment of the cosmochemical properties of boron by Cameron, et al. Anders and Ebihara assumed that boron was a moderately volatile element. They renormalized the data of Curtis et al. to a chondrule free basis and thus inferred that the cosmic abundance of boron was about 3 times greater than that proposed by Curtis, et al. To resolve these differences in data, the relative abundances of several elements including boron were measured in 38 carefully prepared interior pieces of 26 different chondrites. Correlation between boron and sulfur abundances, indicate that, contrary to the conclusions of Cameron, et al., boron is not a moderately volatile element.