A Broad-Spectrum Catalyst for Aliphatic Polymer Breakdown
Explore the source record for details and available documents.
Gao, Jiaxin [Department of Chemistry; University o↗
SEARCH · Search NASA
Results for “Breakdown”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes
Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.
36 MATERIALS SCIENCE↗
Heating of Cs2Te photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
The occurrence of radiofrequency (RF) breakdown limits operational electromagnetic gradients in accelerator structures. Experimental evidence often suggests that breakdown events are associated with temperature and dark current spikes on the surface of RF devices. In the past decade, there has been increased interest in unveiling the mechanism behind breakdown initiation in metal copper and copper alloys; however, efforts regarding a breakdown phenomenon in photocathode-relevant semiconductors have been more limited. In this work, we explore field-emission-assisted heating via Nottingham and Joule processes, as a possible candidate for breakdown initiation. For this, field emission from an intrinsic Cs2Te ultrathin film coated on a copper substrate was modeled within the Stratton–Baskin–Lvov–Fursey formalism, describing the processes and effects in the bulk and on the surface of a photocathode exposed to high RF electromagnetic fields. It is shown that a field-emission characteristic deviates significantly from the classical Fowler–Nordheim (FN) theory, whereby predicting that dark current is orders of magnitude lower than the one expected by FN law. Conventional pulsed heating was also found to impose negligible heating to the photocathode. Both conclusions suggest that a Cs2Te photocathode coated on a metal substrate would be insensitive to catastrophic thermal-material runaway breakdown, unlike what is observed for metal surfaces. Finally, a few unconventional breakdown candidate scenarios are identified and discussed, including thermoelastic deformation and avalanche breakdown.
Shinohara, Ryo (ORCID:0000000276995732)↗
Breakdown front dynamics of streamer-like discharge in electron-charged polymethyl methacrylate
We present the results of an experimental study of fast breakdown in electron-charged polymethyl methacrylate. We irradiate bulk polymethyl methacrylate disks with diameters up to one meter at different implanted charge densities and measure the discharge current during the forced electrical breakdown of the material. We infer the breakdown dynamics from these current waveforms, including the velocity and time dependence of the electric field driving the breakdown, and compare these results with the physical electrical tree patterns left behind in the material. We find that the dynamics and physical characteristics of the breakdown channels in electron-irradiated solids depart from typical expectations of electrical treeing behavior in solid materials. Thus, we interpret these results as an expression of streamer discharges in dense gases motivated by the existence of trapped gases in the solid due to radiation damage. We show that the dynamics of the breakdown channels in the electron-charged solid dielectric material is well described by applying standard streamer physics to this physical system. The results show that the dynamics of breakdown channels in solid dielectric material is a promising avenue to further understand streamer discharges in different media under extreme conditions.
36 MATERIALS SCIENCE↗
Pulsed photoemission induced plasma breakdown
Abstract This article characterises the effects of cathode photoemission leading to electrical discharges in an argon gas. We perform breakdown experiments under pulsed laser illumination of a flat cathode and observe Townsend to glow discharge transitions. The breakdown process is recorded by high-speed imaging, and time-dependent voltage and current across the electrode gap are measured for different reduced electric fields and laser intensities. We employ a 0D transient discharge model to interpret the experimental measurements. The fitted values of transferred photoelectron charge are compared with calculations from a quantum model of photoemission. The breakdown voltage is found to be lower with photoemission than without. When the applied voltage is insufficient for ion-induced secondary electron emission to sustain the plasma, laser driven photoemission can still create a breakdown where a sheath (i.e. a region near the electrode surfaces consisting of positive ions and neutrals) is formed. This photoemission induced plasma persists and decays on a much longer time scale ( ∼ 10 s μ s) than the laser pulse length ( 30 ps). The effects of different applied voltages and laser energies on the breakdown voltage and current waveforms are investigated. The discharge model can accurately predict the measured breakdown voltage curves, despite the existence of discrepancy in quantitatively describing the transient discharge current and voltage waveforms.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Computational prediction of dielectric breakdown strength of a transformer paper in oil with uncertainty quantification
The determination of the dielectric breakdown strengths of microstructurally heterogeneous materials has been a primarily experimental endeavor. We report the development of a microstructure-level model for computationally predicting the breakdown strength and analyzing the interactions between electromagnetic pulses (EMP) and the constituents in a composite of cellulose-based paper and mineral oil found in electrical transformers. The model allows explicit simulation of the material breakdown process by tracking the transition of dielectric constituents from non-conductive to conductive states. The focus is on the electric fields induced in the materials and the overall conditions for dielectric breakdown (defined as the onset of avalanche) caused by the electric field induced in the composite. Responses to three distinct pulse shapes, i.e., Steep Front (SF), Lightning (L), and AC with spectra spanning 60–9 × 105 Hz are considered. It is found that the breakdown strength of the material is significantly affected by microstructure heterogeneities, the spatial variations of the constituent properties, and the pulse shapes. A probabilistic characterization of the breakdown strength is computationally obtained and compared with experimental measurements. Although one particular material is analyzed, the model and approach are applicable to other heterogeneous materials as well.
breakdowns↗
Unintended gas breakdowns in narrow gaps of advanced plasma sources for semiconductor fabrication industry
Occurrence of unintended gas breakdown in the narrow gaps of plasma processing chambers is one of the critical challenges in developing advanced plasma sources. Here, we present a combined experimental and theoretical study of unintended discharges in the narrow gaps of plasma processing chambers and report significant drop of the gas breakdown voltage in the presence of a background plasma facing the gap. Experimentally measured breakdown voltages decrease in subsequent breakdown events due to wall erosion caused by the discharge. Therefore, preventing and mitigating the first discharge is of paramount importance. An analysis of kinetic simulation results indicates that the charged particle influx from the background plasma in the processing chamber into the gap is responsible for the onset of early breakdown: higher charged particle density within the gap modifies the electric field profile, allowing unintended breakdowns to occur at a significantly reduced threshold voltage.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Breakdown insensitive acceleration regime in a metamaterial accelerating structure
A new regime in radiofrequency (rf) breakdown, named the breakdown insensitive acceleration regime (BIAR), was observed in an 11.7 GHz metamaterial structure for wakefield acceleration driven by rf pulses with a duration of a few nanoseconds. In the BIAR, rf breakdown occurs without interrupting potential beam acceleration, resulting in greater resilience to breakdown. We have investigated the possibility that BIAR can support higher gradients by characterizing the breakdown in a high-power test. The peak gradient reached 190 MV / m when the structure was powered by 6 ns long rf pulses with 115 MW peak power. The short rf pulses were extracted from 65 MeV electron bunch trains with a total charge of up to 210 nC. This work has revealed the benefits of short-pulse acceleration by characterizing rf breakdown in the previously unexplored parameter space. Published by the American Physical Society 2024
43 PARTICLE ACCELERATORS↗
Sources of Primary Electrons in Nanosecond Pulsed Breakdown in Water (Final Technical Report)
Electrical breakdown of liquid dielectrics under ns or sub-ns pulsed electric field has been studied extensively in the last decade. Summarized in [7], this relatively young research area makes significant contributions to the theories of liquid breakdown by introducing a new mechanism (electrostrictive cavitation) that is unique at the ns timescale. It is also fundamentally important to plasma sources for biomedical applications and insulation of pulsed power equipment. For water in particular, the understanding of the mechanisms and processes of ns/sub-ns breakdown also sheds new light on cavitation studies, one of the most exciting areas of modern fluid mechanics. The objective of this collaborative research with PCRF was to construct a complete picture of the physical mechanisms and processes at the initial phase of electrical breakdown in liquid dielectrics under nanosecond (ns) pulsed inhomogeneous fields. The research funded by the initial award DE‐ SC0021182 aimed to address the sources of primary electrons in ns breakdown in water, which led to one journal publication and multiple conference presentations. The PI also gave presentations to the PPPL/PCRF audience twice, one in October 2020 and the other during the 2021 PCRF Annual Meeting
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Core-scale numerical simulation and comparison of breakdown of shale and resulting fractures using sc-CO 2 and water as injectants
Supercritical carbon dioxide (sc-CO 2 ) is an alternative to water for stimulation of low permeability systems such as shale gas and geothermal resources. Previously core-scale experimental studies have compared the behavior of CO 2 to water injection for sample breakdown. Due to differences in experimental setup and core sample preparation, inconsistent or even apparently contradictory conclusions have resulted. To reconcile this contradiction, a phase-field numerical model is applied to understand hydraulic fracturing experiments using Green River shale found in the literature. The finite element numerical model incorporates a rate-dependent phase-field fracture model developed separately to describe fracture initiation and growth. We investigate the impact of various material and fluid properties on the resulting fractures. Most importantly, we study the effect of fluid properties and boundary conditions on the breakdown pressure, including the direction of the resulting fracture plane. Model results predict that (1) sc-CO 2 injection in the laboratory may result in greater breakdown pressure than that of water under no-flow boundary conditions because lower viscosity sc-CO 2 may result in pressure build up at the core boundary that opposes fracture initiation and (2) lower viscosity sc-CO 2 also produces fast-propagating fractures that are less influenced by the bedding plane on their resulting fracture topology. Here our model offers a straightforward explanation and reconciliation of existing experimental observations, as well as a means to extrapolate to new conditions. Exploration of field-scale conditions suggests less pronounced or no elevation in breakdown pressure when sc-CO 2 is injected because the pressure build up effect at the system boundary is significantly less or absent at field length scales.
42 ENGINEERING↗
How non-ohmic contact-layer diodes in perovskite pinholes affect abrupt low-voltage reverse-bias breakdown and destruction of solar cells
Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.
14 SOLAR ENERGY↗
Thermal and electric field driven rf breakdown precursor formation on metal surfaces
The phenomenon of electric breakdown poses serious challenges to the design of devices that operate in high electric field environments. Experimental evidence points toward breakdown events that are accompanied by elevated temperatures and dark current spikes, which is attributed to high-asperity nanostructure formation that enhances the local electric field and triggers a runaway process. However, the exact mechanistic origin of such nanostructures under typical macroscopic operational conditions of electric field and magnetic-field-mediated heating remains poorly understood. In this work, we simulate the evolution of a copper surface under the combined action of the electric fields and elevated temperatures. Using a mesoscale curvature-driven surface evolution model, we show how a copper surface can undergo a type of dynamical instability that naturally leads to the formation of sharp asperities in realistic experimental conditions. Exploring the combined effect of fields and temperature rise, we identify the critical regimes that allow for the formation of breakdown precursors. The results show that thermoelastic stresses, while not essential, can significantly lower the critical electric field required for runaway surface instability, which is consistent with experimental observations that thermal effects can increase breakdown rates. Published by the American Physical Society 2024
43 PARTICLE ACCELERATORS↗
Effect of Transverse Compression on the Dielectric Breakdown of Power Cable with Ethylene Propylene Rubber Insulation
Understanding of the failure mechanisms of submarine dynamic power cables (SDPC) is critical for innovative design to meet the 2035 cost reduction target of U.S. DOE Floating Offshore Wind Shot. This is important because the current design suffers a significant failure rate in the field. This project explored a multiphysics approach and conducted systematic electro-thermo-mechanical (ETM) experimental study on the power cores extracted from a 15 kV power cable. The power cable had three cores of copper conductor and ethylene propylene rubber (EPR) insulation. An ETM testing system with transverse compression capability was developed. Mechanical loading induced dielectric breakdown. Increasing temperature from room temperature (RT, 22 degrees Celsius) to 90 degrees Celsius resulted in the 67% decrease in the failure mechanical load as defined by the dielectric breakdown. With the same temperature rise, the creep mechanical load was reduced by 70% at a given dielectric breakdown time. The post-test measurement revealed an impressive recovery of electrical resistance, although the dielectric breakdown occurred in the ETM test that would not be captured without the use of ETM testing.
Wang, Hong [ORNL] (ORCID:0000000201730545)↗
Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage
The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.
Porter, Matthew↗
Formation of field-induced breakdown precursors on metallic electrode surfaces
Understanding the underlying factors responsible for higher-than-anticipated local field enhancements required to trigger vacuum breakdown on pristine metal surfaces is crucial for the development of devices capable of withstanding intense operational fields. In this study, we investigate the behavior of nominally flat copper electrode surfaces exposed to electric fields of hundreds of MV/m. Our novel approach considers curvature-driven diffusion processes to elucidate the formation of sharp breakdown precursors. To do so, we develop a mesoscale finite element model that accounts for driving forces arising from both electrostatic and surface-tension-induced contributions to the free energy. Our findings reveal a dual influence: surface tension tends to mitigate local curvature, while the electric field drives mass transport toward regions of high local field density. This phenomenon can trigger the growth of sharper protrusions, ultimately leading to a rapid enhancement of local fields and, consequently, to a runaway growth instability. We delineate supercritical and subcritical regimes across a range of initial surface roughness. Our numerical results are in qualitative agreement with experimentally reported data, indicating the potential practical relevance of field-driven diffusion in the formation of breakdown precursors.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Breakdown and Discharge Characteristics of High Repetition Frequency Nanosecond Pulsed Air Dielectric Barrier Discharge
This study explores the breakdown characteristics and discharge modes in a parallel plate air dielectric barrier discharge system using repetitive nanosecond pulses, with pulse repetition frequencies (PRFs) from 0.1 to 100 kHz. It examines how pulse parameters—PRF, pulse number and gas pressure—affect the memory effect, leveraging current and voltage measurements, fast imaging and optical emission spectroscopy. The findings show that higher PRFs lead to a reduction in breakdown voltage well below the streamer breakdown threshold. We argue that this effect may be attributed to the cumulative buildup of metastable species and negative ions in the discharge gap which could sustain free electrons in‐between the voltage pulses. Despite observing increased energy deposition with higher PRFs, the impact on filament formation was minimal, highlighting a strong dependence of discharge morphology on the accumulation of plasma‐produced species. This research studies provides valuable insights for controlling discharge regimes in applications such as plasma‐assisted combustion, surface treatment and air treatment by clarifying the interactions between discharge mechanisms at different PRFs and pressures.
42 ENGINEERING↗
Hysteresis between gas breakdown and plasma discharge
In direct-current (DC) discharge, it is well known that hysteresis is observed between the Townsend (gas breakdown) and glow regimes. Forward and backward voltage sweep is performed using a one-dimensional particle-in-cell Monte Carlo collision (PIC-MCC) model considering a ballast resistor. When increasing the applied voltage after reaching the breakdown voltage (V b ), transition from Townsend to glow discharges is observed. When decreasing the applied voltage from the glow regime, the discharge voltage (V d ) between the anode–cathode gap can be smaller than the breakdown voltage, resulting in a hysteresis, which is consistent with experimental observations. Next, the PIC-MCC model is used to investigate the self-sustaining voltage (V s ) in the presence of finite initial plasma densities between the anode and cathode gap. It is observed that the self-sustaining voltage coincides with the discharge voltage obtained from the backward voltage sweep. In addition, the self-sustaining voltage decreases with increased initial plasma density and saturates above a certain initial plasma density, which indicates a change in plasma resistivity. The decrease in self-sustaining voltage is associated with the electron heat loss at the anode for the low pd (rarefied) regime. In the high pd (collisional) regime, the ion energy loss toward the cathode due to the cathode fall and the inelastic collision loss of electrons in the bulk discharge balance out. Finally, it is demonstrated that the self-sustaining voltage collapses to a singular value, despite the presence of a initial plasma, for microgaps when field emission is dominant, which is also consistent with experimental observations.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping
This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.
42 ENGINEERING↗